hi-rel and space product screening MicroWave Technology

Transcription

1 hi-rel ad space product screeig A MicroWave Techology IXYS Compay

2 High-Reliability ad Space-Reliability Screeig Optios Space Qualified Low Noise Amplifiers Model Pkg Freq Liear Gai New (GHz) Gai Fitess +/- Iput RL Output RL -1dB (dbm) NF OIP3 Vdd DC Curret (dbm) (V) (ma) LN H4 H LN H4 H LN H4 H Space Qualified GaAs FETs Model Pkg Gate Width / Legth Gate Layout Method Gate Drai Source Bod New um Qty Chip Thickess & VIA S.S. /Mi /Max /Mi 12GHz /Mi 12GHz Nomial Chip Size mil, y/ db db db dbm dbm um um Ideal Circuit MwT-1 70, /0.3 sigle stripe 1, 1, 2 5, o 10.0 / / / / FB Amp MwT-2 70, /0.3 sigle stripe 2, 2, 3 5, o 8.5 / / - - / / BA Amp MwT-3 70, /0.3 sigle stripe 1, 1, 2 5, o 11.0 / / - - / / BA Amp MwT /0.3 sigle stripe 2, 2, 2 5, o 10.5 / / / / BA/SE Amp MwT-LP /0.3 sigle stripe 2, 2, 2 5, o 10.5 / / / / Oscillator MwT-PH7 70, /0.3 sigle stripe 2, 1, 2 4, o 13.5 / / Medium Pow MwT-T /0.3 Iterdigit 2, 2, 3 4, o 7.5 / / Power Amp MwT-A9 70, /0.3 sigle stripe 1, 1, 2 5, o 9.5 / / / / FB Amp MwT-PH7 70, /0.3 sigle stripe 2, 1, 2 4, o 13.5 / / Medium Pow MwT-H17 89, /0.3 Iterdigit 4, 4, 5 5, o 7.0 / 6.0 * / / BA/FB Amp

3 High-Reliability ad Space-Reliability Screeig Optios Hi-Reliability Screeig Capabilities MwT performs space assembly, testig, screeig ad qualificatio testig for microwave semicoductor devices, compoets ad sub-systems. For military ad space applicatios, the procedures are based o the MIL-PRF ad other idustry ad govermet stadards such as MIL-STD-202, MIL-STD-883, MIL-STD-750, MIL-STD-810, MIL-Q-9858, MIL-STD AND MIL-I We have bee providig compoets ad semicoductor devices to military ad space customers successfully sice Products Available for Screeig GaAS phemt, ad MESFETs Microwave Bipolar Trasistors Microwave Diodes Microwave Compoets, such as amplifiers Microwave Subsystems Elemet Evaluatio MwT performs elemet evaluatio per MIL-PRF o semicoductor devices, passive elemets, substrates, packages, ad other elemets used i microwave compoets ad sub-systems. A typical program for GaAs FET is as follows: Test Method Elemet Electrical Class H Class K Elemet Visual 2010,2072 or 2073 Iteral Visual 2010,2072 or 2073 Temperature Cyclig 1010 Mechaical Shock or 2002 Costat Acceleratio 2001 Bur I hrs.at 125 C o Post Bur-i Electrical Steady State Life 1005 Fial Electrical Wire-bod Evaluatio 2011 SEM 2018, 2077

4 High-Reliability ad Space-Reliability Screeig Optios Hybrid Assembly for Packaged Semicoductor Devices ad microwave Compoets MwT assembles active devices suches as FETs ad MMIC s ad passive devices, ito hermetically sealed packages suitable for military ad space applicatios. These assembly operatios are cotrolled by MwT s striget quality cotrol system. ical i-process cotrol icludes bod-pull ad die-shear o sample circuits every shift. QA visual ispectio o a sample basis is performed o all assembly lot. Hybrid ad packaged device Screeig Screeig is doe per MIL-PRF for either class H or Class K. Test or Ispectio Method Coditio Class H Class K No-destructive Bod-pull 2023 N/A 100% Iteral Visual % 100% Temperature Cyclig 1010 C 100% 100% Costat Acceleratio 2001 A 100% 100% PIND 2020 A N/A 100% Pre-bur-i Electrical 100% 100% Bur-I 1015 B 100% 100% Fial Electrical 100% 100% Group A 100% 100% Seal (Gross ad Fie Leak) 1014 A1/C 100% 100% Radiographic Examiatio 2012 N/A 100% Exteral Visual % 100% Hybrid ad Packaged Device Qualificatios Qualificatios are performed accordig to MIL-PRF ad MIL-STD-883 Test or Ispectio Method Coditio Class H Class K Exteral Visual 2009 PIND 2020 Temperature Cyclig or 1010 C, miimum Thermal Shock 1011 A, miimum Mechaical shock ad/or 2002 B, Y1 directio Costat Acceleratio g, Y1 directio Seal(Gross ad Fie) 1014 Visual Ispectio 1010 Ed-Poit Electrical Steady-state Life Test Hr,125 o C Iteral Water Vapor Cotet 1018 Wire-bod stregth 2011 Die Shear 2019 or 2027

5 High-Reliability ad Space-Reliability Screeig Optios Testig Capabilities RF Test o MMIC, Trasistors ad Diodes 1. Small Sigal Gai, P1dB, Psat, IP3, IMD3, IMD5, VSWR, Reverse Isolatio, ad Noise Figure 2. S-parameter measuremet 3. Measuremets over temperature from -55 o C to +85 o C 4. Frequecy Rage: 100 KHz to 40 GHz DC Test o MMIC, Trasistors ad Diodes: 5. FETs: I, Vp, G, BV, BV, I DSS m GD GS GSS 6. Bipolar Trasistors: I, I, h, BV, BV, BV CBO EBO FE CEO CBO EBO 7. MMIC: IDD 8. Diodes: V, C, Rs, Carrier Life time BR T Program Maagemet MwT has a dedicated program maagemet team to provide support to customers for high reliability orders. From iitial quotig, to the fial shipmet, program maagers provide coordiatio, cotact ad cotrol for all process. They provide up-to-date iformatio o the status of the program ad make sure that MwT complies with all customer requiremets i hardware ad software. Cotact MwT for a list of space heritage. MwT provides a trasparet operatio to her customers. MwT Quality Systems: MwT is ISO registered ad qualified. Our quality system complies with MIL-PRF Quality Maagemet Program. Usig statistical process cotrol, periodic process capability certificatios, desig aalysis, desig robustess, off-lie reliability assessmet techiques, we isure product compliace to the quality ad reliability requiremets of hi-rel ad space applicatios. We have a techology team made up of members from desig egieerig, productio, quality cotrol, maufacturig egieerig ad purchasig. The team cotrols the complete productio lie to achieve the highest process capabilities ad quality. We coduct periodic assessmet of the process/performaces to look for opportuies for cotiuous improvemet.

6 Over 20 Years of Space ad Hi-Rel Experiece. A IXYS Compay MicroWave Techology MicroWave Techology, Ic Solar Way, Fremot, CA 94538, USA Phoe (USA) Fax (USA) efax (USA) ifo@mwtic.com All rights reserved. C 2009 MicroWave Techology, Ic. All specificatios subject to chage without otice. Prited i the USA. Published Jue 2009.