LT1124/LT1125 Dual/Quad Low Noise, High Speed Precision Op Amps

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1 Dual/Quad Low Noise, High Speed Precision Op Amps % Tested Low Voltage Noise:.7nV/ Hz Typ 4.nV/ Hz Max Slew Rate: 4.5V/µs Typ Gain Bandwidth Product:.5MHz Typ Offset Voltage, Prime Grade: 7µV Max Low Grade: µv Max High Voltage Gain: 5 Million Min Supply Current Per Amplifier:.75mA Max Common Mode Rejection: db Min Power Supply Rejection: 6dB Min Available in 8-Pin SO Package Two and Three Op Amp Instrumentation Amplifiers Low Noise Signal Processing Active Filters Microvolt Accuracy Threshold Detection Strain Gauge Amplifiers Direct Coupled Audio Gain Stages Tape Head Preamplifiers Infrared Detectors The LT 4 dual and LT5 quad are high performance op amps that offer higher gain, slew rate and bandwidth than the industry standard OP-7 and competing OP-7/ OP-47 op amps. In addition, the LT4/LT5 have lower I B and I OS than the OP-7; lower V OS and noise than the OP-7/OP-47. In the design, processing and testing of the device, particular attention has been paid to the optimization of the entire distribution of several key parameters. Slew rate, gain bandwidth and khz noise are % tested for each individual amplifier. Consequently, the specifications of even the lowest cost grades (the LT4C and the LT5C) have been spectacularly improved compared to equivalent grades of competing amplifiers. Power consumption of the LT4 is one half of two OP-7s. Low power and high performance in an 8-pin SO package make the LT4 a first choice for surface mounted systems and where board space is restricted. For a decompensated version of these devices, with three times higher slew rate and bandwidth, please see the LT6/LT7 data sheet. Instrumentation Amplifier with Shield Driver Input Offset Voltage Distribution (All Packages, LT4 and LT5)

2 ABSOLTE AXI RATI GS W W W Supply Voltage... ±V Input Voltages... Equal to Supply Voltage Output Short-Circuit Duration... Indefinite Differential Input Current (Note 6)... ±5mA Lead Temperature (Soldering, sec)... 3 C Storage Temperature Range C to 5 C (Note ) Operating Temperature Range LT4AC/LT4C LT5AC/LT5C (Note )... 4 C to 85 C LT4AI/LT4I... 4 C to 85 C LT4AM/LT4M LT5AM/LT5M C to 5 C PACKAGE/ORDER I FOR +IN A V +IN B 3 IN B 4 TOP VIEW A B IN A OT A V + OT B S8 PACKAGE 8-LEAD PLASTIC SO T JMAX = 4 C, θ JA = 9 C NOTE: THIS PIN CONFIGRATION DIFFERS FROM THE 8-PIN PDIP CONFIGRATION. INSTEAD, IT FOLLOWS THE INDSTRY STANDARD LT3DS8 SO PACKAGE PIN LOCATIONS W ATIO ORDER PART NMBER LT4CS8 LT4AIS8 LT4IS8 S8 PART MARKING 4 4AI 4I OT A IN A +IN A V 3 4 A J8 PACKAGE 8-LEAD CERDIP TOP VIEW B N8 PACKAGE 8-LEAD PDIP T JMAX = 6 C, θ JA = C (J8) T JMAX = 4 C, θ JA = 3 C (N8) V + OT B IN B +IN B ORDER PART NMBER LT4CJ8 LT4ACN8 LT4CN8 LT4AMJ8 LT4MJ8 OT A IN A +IN A V + +IN B IN B OT B NC A B TOP VIEW SW PACKAGE 6-LEAD PLASTIC (WIDE) SO D C T JMAX = 4 C, θ JA = 3 C 6 OT D 5 IN D 4 +IN D 3 V +IN C IN C OT C 9 NC LT5CS OT A IN A +IN A V + +IN B IN B OT B A B TOP VIEW 4 OT D 3 IN D +IN D V +IN C 9 IN C 8 OT C J PACKAGE N PACKAGE 4-LEAD CERDIP 4-LEAD PDIP T JMAX = 6 C, θ JA = 8 C (J) T JMAX = 4 C, θ JA = C (N) D C LT5CJ LT5ACN LT5CN LT5AMJ LT5MJ ELECTRICAL CHARACTERISTICS LT4AC/AI/AM LT4/C/I/M LT5AC/AM LT5/C/M SYMBOL PARAMETER CONDITIONS (Note ) TYP MAX TYP MAX NITS V OS Input Offset Voltage LT4 7 5 µv LT µv V OS Long Term Input Offset.3.3 µv/mo Time Voltage Stability I OS Input Offset Current LT na LT na T A = 5 C,, unless otherwise noted.

3 ELECTRICAL CHARACTERISTICS T A = 5 C,, unless otherwise noted. LT4/LT5 LT4AC/AI/AM LT4C/I/M LT5AC/AM LT5C/M SYMBOL PARAMETER CONDITIONS (Note ) TYP MAX TYP MAX NITS I B Input Bias Current ±7 ± ±8 ±3 na e n Input Noise Voltage.Hz to Hz (Notes 8, 9) 7 7 nv P-P Input Noise Voltage Density f O = Hz (Note 4) nv/ Hz f O = Hz (Note 3) nv/ Hz i n Input Noise Current Density f O = Hz.3.3 pa/ Hz f O = Hz.3.3 pa/ Hz V CM Input Voltage Range ± ±.8 ± ±.8 V CMRR Common Mode Rejection Ratio V CM = ±V db PSRR Power Supply Rejection Ratio V S = ±4V to ±8V db A VOL Large-Signal Voltage Gain R L k, V OT = ±V V/µV R L k, V OT = ±V V/µV V OT Maximum Output Voltage Swing R L k ±3 ±3.8 ±.5 ±3.8 V SR Slew Rate R L k (Notes 3, 7) V/µs GBW Gain Bandwidth Product f O = khz (Note 3) MHz Z O Open-Loop Output Resistance V OT =, I OT = Ω I S Supply Current per Amplifier ma Channel Separation f Hz (Note 9) db V OT = ±V, R L = k The denotes the specifications which apply over the 55 C T A 5 C temperature range,, unless otherwise noted. LT4AM LT4M LT5AM LT5M SYMBOL PARAMETER CONDITIONS (Note ) TYP MAX TYP MAX NITS V OS Input Offset Voltage LT µv LT µv V OS Average Input Offset (Note 5) µv/ C Temp Voltage Drift I OS Input Offset Current LT na LT na I B Input Bias Current ±8 ±55 ± ±7 na V CM Input Voltage Range ±.3 ± ±.3 ± V CMRR Common Mode Rejection Ratio V CM = ±.3V 6 db PSRR Power Supply Rejection Ratio V S = ±4V to ±8V 4 db A VOL Large-Signal Voltage Gain R L k, V OT = ±V 3. V/µV R L k, V OT = ±V 3.7 V/µV V OT Maximum Output Voltage Swing R L k ±.5 ±3.6 ± ±3.6 V SR Slew Rate R L k (Notes 3, 7) V/µs I S Supply Current per Amplifier ma 3

4 ELECTRICAL CHARACTERISTICS The denotes the specifications which apply over the C T A 7 C temperature range,, unless otherwise noted. LT4AC LT4C LT5AC LT5C SYMBOL PARAMETER CONDITIONS (Note ) TYP MAX TYP MAX NITS V OS Input Offset Voltage LT µv LT µv V OS Average Input Offset (Note 5) µv/ C Temp Voltage Drift I OS Input Offset Current LT na LT na I B Input Bias Current ±8 ±35 ±9 ±45 na V CM Input Voltage Range ±.5 ±.4 ±.5 ±.4 V CMRR Common Mode Rejection Ratio V CM = ±.5V 9 5 db PSRR Power Supply Rejection Ratio V S = ±4V to ±8V 5 7 db A VOL Large-Signal Voltage Gain R L k, V OT = ±V V/µV R L k, V OT = ±V V/µV V OT Maximum Output Voltage Swing R L k ±.5 ±3.7 ± ±3.7 V SR Slew Rate R L k (Notes 3, 7) V/µs I S Supply Current per Amplifier ma The denotes the specifications which apply over the 4 C T A 85 C temperature range,, unless otherwise noted. (Note ) LT4AC/AI LT4C/I LT5AC LT5C SYMBOL PARAMETER CONDITIONS (Note ) TYP MAX TYP MAX NITS V OS Input Offset Voltage LT µv LT µv V OS Average Input Offset (Note 5) µv/ C Temp Voltage Drift I OS Input Offset Current LT na LT na I B Input Bias Current ±5 ±5 ±7 ±65 na V CM Input Voltage Range ±.4 ±. ±.4 ±. V CMRR Common Mode Rejection Ratio V CM = ±.4V 7 4 db PSRR Power Supply Rejection Ratio V S = ±4V to ±8V 4 6 db A VOL Large-Signal Voltage Gain R L k, V OT = ±V 3.5. V/µV R L k, V OT = ±V V/µV V OT Maximum Output Voltage Swing R L k ±.5 ±3.6 ± ±3.6 V SR Slew Rate R L k (Notes 3, 7) V/µs I S Supply Current per Amplifier ma Note : Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note : Typical parameters are defined as the 6% yield of parameter distributions of individual amplifiers; i.e., out of LT5s (or LT4s) typically 4 op amps (or ) will be better than the indicated specification. Note 3: This parameter is % tested for each individual amplifier. Note 4: This parameter is sample tested only. Note 5: This parameter is not % tested. Note 6: The inputs are protected by back-to-back diodes. Current limiting resistors are not used in order to achieve low noise. If differential input voltage exceeds ±.4V, the input current should be limited to 5mA. 4 Note 7: Slew rate is measured in A V = ; input signal is ±7.5V, output measured at ±.5V. Note 8:.Hz to Hz noise can be inferred from the Hz noise voltage density test. See the test circuit and frequency response curve for.hz to Hz tester in the Applications Information section of the LT7 or LT8 data sheets. Note 9: This parameter is guaranteed but not tested. Note : The LT4C/LT5C and LT4AC/LT5AC are guaranteed to meet specified performance from C to 7 C and are designed, characterized and expected to meet these extended temperature limits, but are not tested at 4 C and 85 C. The LT4AI and LT4I are guaranteed to meet the extended temperature limits.

5 TYPICAL PERFOR A W CE CHARACTERISTICS VOLTAGE NOISE (4nV/DIV).Hz to Hz Voltage Noise.Hz to Hz Voltage Noise Voltage Noise vs Frequency TIME (SECONDS) VOLTAGE NOISE (4nV/DIV) TIME (SECONDS) RMS VOLTAGE NOISE DENSITY (nv/ Hz) 3 3 T A = 5 C MAXIMM TYPICAL /f CORNER.3Hz.. FREQENCY (Hz) 4/5 G 4/5 G 4/5 G3 RMS CRRENT NOISE DENSITY (pa/ Hz) Input Bias or Offset Current Output Short-Circuit Current Current Noise vs Frequency vs Temperature vs Time /f CORNER Hz T A = 5 C MAXIMM TYPICAL. k k FREQENCY (Hz) INPT BIAS OR OFFSET CRRENT (na) 3 75 LT4M/LT5M LT4AM/LT5AM TEMPERATRE ( C) SHORT-CIRCIT CRRENT (ma) SINKING SORCING C 55 C 5 C 5 C 5 C 55 C TIME FROM OTPT SHORT TO GND (TES) 4 G4 4/5 G5 LT4 G6 INPT BIAS CRRENT (na) Input Bias Current Over the Common Mode Rejection Ratio Power Supply Rejection Ratio Common Mode Range vs Frequency vs Frequency T A = 5 C DEVICE WITH POSITIVE INPT CRRENT DEVICE WITH NEGATIVE INPT CRRENT COMMON MODE REJECTION RATIO (db) T A = 5 C V CM = ±V POWER SPPLY REJECTION RATIO (db) PSRR PSRR T A = 5 C COMMON MODE INPT VOLTAGE (V) k k k M M FREQENCY (Hz) FREQENCY (Hz) 4/5 G7 4/5 G8 4/5 G9 5

TYPICAL PERFOR A W CE CHARACTERISTICS VOLTAGE GAIN (db) 8 4 6.

LT4M/LT5M LT4AM/LT5AM LT4M/LT5M 5 5 5 5 75 5 TEMPERATRE ( C) VOLTAEG GAIN (db) 5 4 3.

6 TYPICAL PERFOR A W CE CHARACTERISTICS VOLTAGE GAIN (db) Voltage Gain vs Frequency Voltage Gain vs Temperature Gain, Phase Shift vs Frequency T A = 5 C k M M FREQENCY (Hz) VOLTAGE GAIN (V/ µ V) R L= k V S = ± 5V V OT = ± V R L= k LT4AM/LT5AM LT4M/LT5M LT4AM/LT5AM LT4M/LT5M TEMPERATRE ( C) VOLTAEG GAIN (db) GAIN Ø T A = 5 C C L = pf FREQENCY (MHz) PHASE SHIFT (DEGREES) 4/5 G 4/5 G 4/5 G PERCENT OF NITS 4 3 Offset Voltage Drift with Input Offset Voltage Drift Temperature of Representative Distribution nits Supply Current vs Supply Voltage N8 S8 96 J8 396 NITS TESTED INPT OFFSET VOLTAGE DRIFT (µv/ C) OFFSET VOLTAGE ( µ V) TEMPERATRE ( C) SPPLY CRRENT PER AMPLIFIER (ma) 3 5 C 5 C 55 C ±5 ± ±5 ± SPPLY VOLTAGE (V) 4/5 G3 4/5 G4 4/5 G5 5mV 5mV 6 Output Voltage Swing vs Small-Signal Transient Response Large-Signal Transient Response Load Current A VCL = + or ±5V C L = 5pF 4/5 G6 V V A VCL = 4/5 G7 V +.8 OTPT VOLTAGE SWING (V) V S = ±3V TO ±8V 5 C 55 C 5 C 5 C 5 C 55 C V I SINK I SORCE OTPT CRRENT (ma) 4/5 G8

7 TYPICAL PERFOR COMMON MODE LIMIT (V) REFERRED TO POWER SPPLY V +.5 V A W CE CHARACTERISTICS Common Mode Limit vs Temperature Channel Separation vs Frequency Warm-p Drift V + = 3V TO 8V V = 3V TO 8V 6 4 TEMPERATRE ( C) CHANNEL SEPARATION (db) R L = k V OT = 7V P-P T A = 5 C LIMITED BY THERMAL INTERACTION LIMITED BY PIN TO PIN CAPACITANCE k k k M M FREQENCY (Hz) CHANGE IN OFFSET VOLTAGE (µv) T A = 5 C LT4/LT5 SO PACKAGE N, J PACKAGES TIME AFTER POWER ON (TES) 4/5 G9 4/5 G 4/5 G TOTAL HARMONIC DISTORTION + NOISE (%)... Total Harmonic Distortion Total Harmonic Distortion Total Harmonic Distortion and Noise vs Frequency for and Noise vs Frequency for and Noise vs Frequency for Noninverting Gain Inverting Gain Competitive Devices Z L = k/5pf V O = V P-P A V = +, +, + MEASREMENT BANDWIDTH = Hz TO 8kHz A V = + A V = + A V = +. k k k FREQENCY (Hz) TOTAL HARMONIC DISTORTION + NOISE (%)... Z L = k/5pf V O = Vp-p A V =,, MEASREMENT BANDWIDTH = Hz TO 8kHz A V = A V = A V =. k k k FREQENCY (Hz) TOTAL HARMONIC DISTORTION + NOISE (%)... Z L = k/5pf V O = Vp-p A V = MEASREMENT BANDWIDTH = Hz TO 8kHz OP7 OP7 LT4. k k k FREQENCY (Hz) 4/5 G 4/5 G3 4/5 G4 TOTAL HARMONIC DISTORTION + NOISE (%). Total Harmonic Distortion and Total Harmonic Distortion and Intermodulation Distortion Noise vs Output Amplitude for Noise vs Output Amplitude for (CCIF Method)* vs Frequency Noninverting Gain Inverting Gain LT4 and OP7.. Z L = k/5pf f O = khz A V = +, +, + MEASREMENT BANDWIDTH = Hz TO khz A V = + A V = + A V = OTPT SWING (V P-P ) TOTAL HARMONIC DISTORTION + NOISE (%)... Z L = k/5pf f O = khz A V =,, MEASREMENT BANDWIDTH = Hz TO khz A V = A V = A V =..3 3 OTPT SWING (Vp-p) INTERMODLATION DISTORTION (IMD)(%).. Z L = k/5pf f (IM) = khz f O = 3.5kHz V O = Vp-p A V = MEASREMENT BANDWIDTH = Hz TO 8kHz OP7 LT4. 3k k k FREQENCY (Hz) *See LT5 data sheet for definition of CCIF testing 4/5 G5 4/5 G6 4/5 G7 7

8 APPLICATI O S I FOR W ATIO The LT4 may be inserted directly into OP-7 sockets. The LT5 plugs into OP-47 sockets. Of course, all standard dual and quad bipolar op amps can also be replaced by these devices. (5µV/V). However, Table can be used to estimate the expected matching performance between the two sides of the LT4, and between amplifiers A and D, and between amplifiers B and C of the LT5. Matching Specifications In many applications the performance of a system depends on the matching between two op amps, rather than the individual characteristics of the two devices. The three op amp instrumentation amplifier configuration shown in this data sheet is an example. Matching characteristics are not % tested on the LT4/LT5. Some specifications are guaranteed by definition. For example, 7µV maximum offset voltage implies that mismatch cannot be more than 4µV. db (=.5µV/V) CMRR means that worst case CMRR match is 6dB Offset Voltage and Drift Thermocouple effects, caused by temperature gradients across dissimilar metals at the contacts to the input terminals, can exceed the inherent drift of the amplifier unless proper care is exercised. Air currents should be minimized, package leads should be short, the two input leads should be close together and maintained at the same temperature. The circuit shown in Figure to measure offset voltage is also used as the burn-in configuration for the LT4/ LT5, with the supply voltages increased to ±6V. 5k* Ω* 5k* + 5V 5V V OT V OT = V OS *RESISTORS MST HAVE LOW THERMOELECTRIC POTENTIAL 4/5 F Figure. Test Circuit for Offset Voltage and Offset Voltage Drift with Temperature Table. Expected Match LT4AC/AM LT4C/M LT5AC/AM LT5C/M PARAMETER 5% YIELD 98% YIELD 5% YIELD 98% YIELD NITS V OS Match, V OS LT4 3 3 µv LT µv Temperature Coefficient Match µv/ C Average Noninverting I B na Match of Noninverting I B na CMRR Match db PSRR Match db 8

9 APPLICATI O High Speed Operation S W When the feedback around the op amp is resistive (R F ), a pole will be created with R F, the source resistance and capacitance (R S, C S ), and the amplifier input capacitance (C IN pf). In low closed loop gain configurations and with R S and R F in the kilohm range, this pole can create excess phase shift and even oscillation. A small capacitor (C F ) in parallel with R F eliminates this problem (see Figure ). With R S (C S + C IN ) = R F C F, the effect of the feedback pole is completely removed. R S C S + I FOR C F R F C IN Figure. High Speed Operation nity Gain Buffer Applications ATIO OTPT 4/5 F When R F Ω and the input is driven with a fast, large signal pulse (>V), the output waveform will look as shown in Figure 3. During the fast feedthrough-like portion of the output, the input protection diodes effectively short the output to the input and a current, limited only by the output short circuit protection, will be drawn by the signal generator. With R F 5Ω, the output is capable of handling the current requirements (I L ma at V) and the amplifier stays in its active mode and a smooth transition will occur. Noise Testing Each individual amplifier is tested to 4.nV/ Hz voltage noise; i.e., for the LT4 two tests, for the LT5 four tests are performed. Noise testing for competing multiple op amps, if done at all, may be sample tested or tested using the circuit shown in Figure 4. e n OT = (e na ) + (e nb ) + (e nc ) + (e nd ) If the LT5 were tested this way, the noise limit would be 4 (4.nV/ Hz) = 8.4nV/ Hz. But is this an effective screen? What if three of the four amplifiers are at a typical.7nv/ Hz, and the fourth one was contaminated and has 6.9nV/ Hz noise? RMS Sum = (.7) + (.7) + (.7) + (6.9) = 8.33nV/ Hz This passes an 8.4nV/ Hz spec, yet one of the amplifiers is 64% over the LT5 spec limit. Clearly, for proper noise measurement, the op amps have to be tested individually. + R F OTPT 4.5V/µs + D C + B + A + OT 4/5 F3 4/5 F4 Figure 3. nity-gain Buffer Applications Figure 4. Competing Quad Op Amp Noise Test Method 9

10 PERFOR A CE CO PARISO W W Table summarizes the performance of the LT4/ LT5 compared to the low cost grades of alternate approaches. The comparison shows how the specs of the LT4/ LT5 not only stand up to the industry standard OP-7, but in most cases are superior. Normally dual and quad performance is degraded when compared to singles, for the LT4/LT5 this is not the case. Table. Guaranteed Performance,, T A = 5 C, Low Cost Devices LT4CN8 PARAMETER/NITS LT5CN OP-7 GP OP-7 GP OP-47 GP NITS Voltage Noise, khz nv/ Hz % Tested Sample Tested No Limit Sample Tested Slew Rate V/µs % Tested Not Tested Gain Bandwidth Product MHz % Tested Not Tested No Limit No Limit Offset Voltage LT4 5 µv LT5 4 µv Offset Current LT4 75 na LT5 3 3 na Bias Current na Supply Current/Amp ma Voltage Gain, R L = k V/µV Common Mode Rejection Ratio 6 9 db Power Supply Rejection Ratio db SO-8 Package Yes - LT4 Yes No TYPICAL APPLICATI O S Gain Amplifier with.% Accuracy, DC to Hz Gain Error vs Frequency Closed-Loop Gain = 365Ω % INPT 34k % 3 + 5k 5% 5V / LT4 5V 6 (S-8) 8 (N8) k TRIM OTPT RN6C FILM RESISTORS THE HIGH GAIN AND WIDE BANDWIDTH OF THE LT4/LT5, IS SEFL IN LOW FREQENCY HIGH CLOSED-LOOP GAIN AMPLIFIER APPLICATIONS. A TYPICAL PRECISION OP AMP MAY HAVE AN OPEN-LOOP GAIN OF ONE MILLION WITH 5kHz BANDWIDTH. AS THE GAIN ERROR PLOT SHOWS, THIS DEVICE IS CAPABLE OF.% AMPLIFYING ACCRACY P TO.3Hz ONLY. EVEN INSTRMENTATION RANGE SIGNALS CAN VARY AT A FASTER RATE. THE LT4/LT5 GAIN PRECISION BANDWIDTH PRODCT IS 75 TIMES HIGHER, AS SHOWN. 4 7 (SO-8) (N8) 4/5 TA3 GAIN ERROR (PERCENT)... TYPICAL PRECISION OP AMP LT4/LT5 CLOSED-LOOP GAIN GAIN ERROR = OPEN-LOOP GAIN.. FREQENCY (Hz) 4/5 TA4

11 SCHE ATICDAGRA I W W (/ LT4, /4 LT5) V + Q7 36µA 57µA µa Q8 Q Q9 Q3 Q8 k pf k 3.6k 3.6k Q7 Q8 35pF Q5 Q6 Q7 Ω OTPT NONINVERTING INPT (+) INVERTING INPT () V Q3 QA QB Q9 QA QB Q Q Q5 Q 9Ω 4Ω 67pF V + pf V + Q Q6 Q3 Q4 µa µa Ω 6k Ω 6k 5Ω µa Q3 Ω Q9 V 4/5 SS

12 PACKAGE DESCRIPTIO Dimensions in inches (millimeters) unless otherwise noted. J8 Package 8-Lead CERDIP (Narrow.3, Hermetic) (LTC DWG # 5-8-) (.43.77) FLL LEAD OPTION.3 BSC (.76 BSC) CORNER LEADS OPTION (4 PLCS).3.45 ( ) HALF LEAD OPTION.5 (.7).5 (.635) RAD TYP.45 (.87) MAX ( ). (5.8) MAX.5.6 (.38.54).8.8 (.3.457) 5 NOTE: LEAD DIMENSIONS APPLY TO SOLDER DIP/PLATE OR TIN PLATE LEADS (.43.77).4.6 (.36.66) ±. (.54 ±.54) J8 97 N8 Package 8-Lead PDIP (Narrow.3) (LTC DWG # 5-8-5).4* (.6) MAX ±.5* (6.477 ±.38) ( ) (.43.65).3 ±.5 (3.3 ±.7).9.5 (.9.38) ( ).65 (.65) TYP. ±. (.54 ±.54) *THESE DIMENSIONS DO NOT INCLDE MOLD FLASH OR PROTRSIONS. MOLD FLASH OR PROTRSIONS SHALL NOT EXCEED. INCH (.54mm).5 (3.75).8 ±.3 (.457 ±.76). (.58) N8 97

13 PACKAGE DESCRIPTIO Dimensions in inches (millimeters) unless otherwise noted. S8 Package 8-Lead Plastic Small Outline (Narrow.5) (LTC DWG # 5-8-6).89.97* ( ) ( ).5.57** ( ) (.3.54).. (.54.58) 45 8 TYP ( ).4. (..54) * DIMENSION DOES NOT INCLDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED.6" (.5mm) PER SIDE ** DIMENSION DOES NOT INCLDE INTERLEAD FLASH. INTERLEAD FLASH SHALL NOT EXCEED." (.54mm) PER SIDE.4.9 ( ).5 (.7) TYP SO

14 PACKAGE DESCRIPTIO Dimensions in inches (millimeters) unless otherwise noted. J Package 4-Lead CERDIP (Narrow.3, Hermetic) (LTC DWG # 5-8-).5 (.7).785 (9.939) MAX (.635) RAD TYP..3 ( ).3 BSC (.76 BSC) (5.8) MAX.5.6 (.38.54).8.8 (.3.457) (.43.77) NOTE: LEAD DIMENSIONS APPLY TO SOLDER DIP/PLATE OR TIN PLATE LEADS.4.6 (.36.66). ±. (.54 ±.54).5 (3.75) J4 97 N Package 4-Lead PDIP (Narrow.3) (LTC DWG # 5-8-5).77* (9.558) MAX ±.5* (6.477 ±.38) ( ).3 ±.5 (3.3 ±.7) (.43.65) (.9.38) ( ). (.58).5 (3.75) *THESE DIMENSIONS DO NOT INCLDE MOLD FLASH OR PROTRSIONS. MOLD FLASH OR PROTRSIONS SHALL NOT EXCEED. INCH (.54mm).5 (.5). ±. (.54 ±.54).65 (.65) TYP.8 ±.3 (.457 ±.76) N4 97

15 PACKAGE DESCRIPTIO Dimensions in inches (millimeters) unless otherwise noted. SW Package 6-Lead Plastic Small Outline (Wide.3) (LTC DWG # 5-8-6) * (.9.49) NOTE (.7.643).9.99** ( ) ( ).93.4 (.36.64) (.94.43) 8 TYP.9.3 (.9.33).5 (.7) TYP.4.9 ( ) TYP NOTE.6.5 (.46.7) NOTE:. PIN IDENT, NOTCH ON TOP AND CAVITIES ON THE BOTTOM OF PACKAGES ARE THE MANFACTRING OPTIONS. THE PART MAY BE SPPLIED WITH OR WITHOT ANY OF THE OPTIONS * DIMENSION DOES NOT INCLDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED.6" (.5mm) PER SIDE ** DIMENSION DOES NOT INCLDE INTERLEAD FLASH. INTERLEAD FLASH SHALL NOT EXCEED." (.54mm) PER SIDE.4. (..35) S6 (WIDE) 396 Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 5

16 TYPICAL APPLICATION Strain Gauge Signal Conditioner with Bridge Excitation 5V LT9 5k.5V 3 + /4 LT5 k THE LT4/LT5 IS CAPABLE OF PROVIDING EXCITATION CRRENT DIRECTLY TO BIAS THE 35Ω BRIDGE AT 5V WITH ONLY 5V ACROSS THE BRIDGE (AS OPPOSED TO THE SAL V) TOTAL POWER DISSIPATION AND BRIDGE WARM-P DRIFT IS REDCED. THE BRIDGE OTPT SIGNAL IS HALVED, BT THE LT4/LT5 CAN AMPLIFY THE REDCED SIGNAL ACCRATELY. 5V 35Ω BRIDGE REFERENCE OTPT 5V 3 + 5V /4 LT5 4 k 3k* k ZERO TRIM *RN6C FILM RESISTORS 4 /4 LT5 3 5V 7 5k GAIN TRIM µf 3k* V TO V OTPT 499Ω* 5V 4/5 TA5 RELATED PARTS PART NMBER DESCRIPTION COMMENTS LT7 Single Low Noise, Precision Op Amp.5nV/ Hz khz Voltage Noise LT8/LT8 Single Low Noise, Precision Op Amps.85nV/ Hz Voltage Noise LT/LT4 Dual/Quad Precision Picoamp Input 5pA Max I B LT3 Dual Low Noise JFET Op Amp 4.5nV/ Hz Voltage Noise, fa/ Hz Current Noise LT6/LT7 Decompensated LT4/LT5 V/µs Slew Rate LT69 Dual Low Noise JFET Op Amp 6nV/ Hz Voltage Noise, fa/ Hz Current Noise, pa Max I B LT79 Single LT3 4.nV/ Hz Voltage Noise, fa/ Hz Current Noise LT793 Single LT69 6nV/ Hz Voltage Noise, fa/ Hz Current Noise, pa Max I B 6 Linear Technology Corporation 63 McCarthy Blvd., Milpitas, CA (48)43-9 FAX: (48) fas, sn45 LT/TP 699 REV A K PRINTED IN SA LINEAR TECHNOLOGY CORPORATION 99

FEATURES APPLICATIONS TYPICAL APPLICATION LT1466L/LT1467L Micropower Dual/Quad Precision Rail-to-Rail Input and Output Op Amps

FEATURES APPLICATIONS TYPICAL APPLICATION LT1466L/LT1467L Micropower Dual/Quad Precision Rail-to-Rail Input and Output Op Amps Micropower Dual/Quad Precision Rail-to-Rail Input and Output Op Amps FEATRES Rail-to-Rail Input and Output Low Supply Current: 75µA Max 39µV V OS(MAX) for V CM = V to V + High Common Mode Rejection Ratio: