RH1014M Quad Precision Operational Amplifier DESCRIPTIO PACKAGE INFORMATION BURN-IN CIRCUIT

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1 RH4M Quad Precision Operational Amplifier DESCRIPTIO U The RH4M is the first precision quad operational amplifier which directly upgrades designs in the industry standard 8-pin DIP LM4/LM48/OP-/556 pin configuration. Low offset voltage (µv max), low drift (.5µV/ C), low offset current (.5nA), and high gain (. million min) combine to make the RH4M four truly precision amplifers in one package. The wafer lots are processed to Linear Technology s inhouse Class S flow to yield circuits usable in stringent military applications. BURN-IN CIRCUIT ABSOLUTE AXI U RATI GS W W W Supply Voltage... ±V Differential Input Voltage... ±V Input Voltage... Equal to Positive Supply Voltage... 5V Below Negative Supply Voltage Output Short-Circuit Duration... Indefinite Operating Temperature Range C to 5 C Storage Temperature Range C to 5 C Lead Temperature (Soldering, sec)... C U, LTC and LT are registered trademarks of Linear Technology Corporation. PACKAGE INFORMATION TOP VIEW OUT A 4 OUT D 5k V IN A +IN A V + +IN B 4 5 IN D +IN D V +IN C Ω RH4M IN B OUT B IN C OUT C 5k V J PACKAGE 4-LEAD CERAMIC DIP RH4M BI TOP VIEW OUT A IN A +IN A V + +IN B IN B OUT B OUT D IN D +IN D V +IN C IN C OUT C W PACKAGE 4-LEAD FLATPAK GLASS SEALED

2 RH4M TABLE : ELECTRICAL CHARACTERISTICS V S = ±5V, V CM = V, unless otherwise noted. (Pre-Irradiation) T A = 5 C SUB- 55 C T A 5 C SUB- SYMBOL PARAMETER CONDITIONS NOTES MIN TYP MAX GROUP MIN TYP MAX GROUP UNITS V OS Input Offset Voltage 55, µv µv V CM =.V, T A = 5 C 75 µv V OS Average Tempco of Offset.5 µv/ C Temp Voltage V OS Long Term V OS Stability.5 µv/mo Time I OS Input Offset Current, na, na I B Input Bias Current 45, na 5, na e n Input Noise Voltage.Hz to Hz.55 µv P-P Input Noise Voltage f O = Hz 4 nv/ Hz Density f O = Hz nv/ Hz i n Input Noise Current f O = Hz.7 pa/ Hz Density R IN Input Resistance Differential 7 MΩ Common Mode 4 GΩ A VOL Large-Signal Voltage Gain V O = ±V, R L k ,6 V/µV V O = ±V, R L 6Ω.5 4 V/µV V O = 5mV to 4V, R L = 5Ω V/µV Input Voltage Range.5 V 5. V,.5 V, V CMRR Common-Mode Rejection V CM =.5V, 5V 97 db Ratio V CM = V, 4.9V 94, db PSRR Power Supply Rejection V S = ±V to ±8V 97, db Ratio Channel Separation V O = ±V, R L = k db V OUT Output Voltage Swing R L k ±.5 4 ±.5 5,6 V Output Low, No Load 5 4 mv Output Low, 6Ω to GND 4 8 5,6 mv Output Low, I SINK = ma 5 4 mv Output High, No Load 4. 4 V Output High, 6Ω to GND ,6 V SR Slew Rate. 4 V/µs I S Supply Current Per Amplifier.55.7, ma.5.65, ma

3 RH4M TABLE A: ELECTRICAL CHARACTERISTICS (Post-Irradiation) V S = ±5V, V CM = V, T A = 5 C, unless otherwise noted. KRAD(Si) KRAD(Si) 5KRAD(Si) KRAD(Si) KRAD(Si) SYMBOL PARAMETER CONDITIONS NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS V OS Input Offset Voltage µv µv I OS Input Offset Current 5 5 na 5 na I B Input Bias Current na 8 5 na Input Voltage Range V V V V CMRR Common-Mode Rejection V CM = V, 5V db Ratio PSRR Power Supply Rejection V S = ±V to ±8V db Ratio A VOL Large-Signal Voltage Gain R L k, V O = ±V V/mV V OUT Maximum Output Voltage R L k ±.5 ±.5 ±.5 ±.5 ±.5 V Swing Output Low, No Load mv Output Low, 6Ω to GND mv Output Low, I SINK = ma V Output High, No Load V Output High, 6Ω to GND V SR Slew Rate R L k V/µs I S Supply Current Per Amplifier ma ma Note : Guaranteed by design, characterization, or correlation to other tested parameters. Note : Specification applies for V S + = 5V, V S = V, V CM = V, V OUT =.4V.

4 RH4M TABLE : ELECTRICAL TEST REQUIRE E TS MIL-STD-88 TEST REQUIREMENTS SUBGROUP Final Electrical Test Requirements (Method 54) *,,,4,5,6 Group A Test Requirements (Method 55),,,4,5,6 Group B and D for Class S,, End Point Electrical Parameters (Method 55) * PDA applies to subgroup. See PDA Test Notes. U W PDA Test Notes The PDA is specified as 5% based on failures from group A, subgroup, tests after cooldown as the final electrical test in accordance with method 54 of MIL-STD-88. The verified failures of group A, subgroup, after burn-in divided by the total number of devices submitted for burn-in in that lot shall be used to determine the percent for the lot. Linear Technology Corporation reserves the right to test to tighter limits than those given. TOTAL DOSE BIAS CIRCUIT k 5V 8V k + 5V RH4M TDBC TYPICAL PERFOR.8 A U W Supply Current (Per Amplifier) V S = ±5V R L = k CE CHARACTERISTICS.8 Positive Slew Rate V S = ±5V R L = k.8 Negative Slew Rate V S = ±5V R L = k SUPPLY CURRENT (ma).6.4. POSITIVE SLEW RATE (V/µs).6.4. NEGATIVE SLEW RATE (V/µs).6.4. RH4M G RH4M G RH4M G 4

5 RH4M TYPICAL PERFOR A U W CE CHARACTERISTICS INPUT OFFSET VOLTAGE (µv) Input Offset Voltage V S = ±5V V CM = V INPUT BIAS CURRENT (na) Input Bias Current V S = ±5V V CM = V INPUT OFFSET CURRENT (na) Input Offset Current V S = ±5V V CM = V RH4M G4 RH4M G5 RH4M G6 OPEN-LOOP GAIN (db) Open-Loop Gain V S = ±5V R L = k V OUT = ±V RH4M G7 COMMON-MODE REJECTION RATIO (db) Common-Mode Rejection Ratio V S = ±5V 5V V CM.5V RH4M G8 POWER SUPPLY REJECTION RATIO (db) Power Supply Rejection Ratio 4 V S = ±V TO ±8V RH4M G9 INPUT NOISE VOLTAGE DENSITY (nv/ Hz) Input Noise Voltage Density V S = ±5V f O = Hz RH4M G GAIN BANDWIDTH PRODUCT (khz) Gain Bandwidth Product V S = ±5V R L = k RH4M G Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 5

6 RH4M 6 Linear Technology Corporation 6 McCarthy Blvd., Milpitas, CA (48) 4-9 FAX: (48) I.D. No Rev. G 7 LT 7 REV G PRINTED IN USA LINEAR TECHNOLOGY CORPORATION 99

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