U U W PACKAGE I FOR ATIO. RH1498M 10MHz, 6V/µs, Dual Rail-to-Rail Input and Output Precision C-Load Op Amp DESCRIPTIO BUR -I CIRCUIT

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1 RH498M MHz, 6V/µs, Dual Rail-to-Rail Input and Output Precision C-Load Op Amp DESCRIPTIO U The RH498 is a dual, rail-to-rail input and output precision C-Load TM op amp with a MHz gain-bandwidth product and a 6V/µs slew rate. The RH498 is designed to maximize input dynamic range by delivering precision performance over the full supply voltage. Using a patented technique, the input stages of the RH498 are trimmed, one at the negative supply and the other at the positive supply. The resulting guaranteed common mode rejection is much better than other rail-torail input op amps. When used as a unity-gain buffer in front of single supply 2-bit A-to-D converters, the RH498 is guaranteed to add less than LSB of error even in single 3V supply systems. With db of supply rejection, the RH498 maintains its performance over a supply range of 2.2V to 36V. The inputs can be driven beyond the supplies without damage or phase reversal of the output. These op amps remain stable while driving capacitive loads up to,pf. The wafer lots are processed to Linear Technology's inhouse Class S flow to yield circuits usable in stringent military and space applications., LTC and LT are registered trademarks of Linear Technology Corporation. C-Load is a trademark of Linear Technology Corporation. ABSOLUTE AXI U RATI GS W W W (Note ) Total Supply Voltage (V + to V )... 36V Input Current... ±ma Output Short-Circuit Duration (Note 2)... Continuous Operating Temperature Range C to 25 C Specified Temperature Range C to 25 C Junction Temperature... 5 C Storage Temperature Range C to 5 C Lead Temperature (Soldering, sec)... 3 C U BUR -I CIRCUIT U U U U W PACKAGE I FOR ATIO 5k Ω 5k 6V RH498M 6V RH498M BI OUT A IN A +IN A NC V TOP VIEW W PACKAGE -LEAD FLATPAK V + OUT B IN B +IN B NC

2 RH498M TABLE : ELECTRICAL CHARACTERISTICS (Pre-Irradiation) V S = ±5V, V CM = V OUT = V, unless otherwise noted. T A = 25 C SUB- 55 C T A 25 C SUB- SYMBOL PARAMETER CONDITIONS NOTES MIN TYP MAX GROUP MIN TYP MAX GROUP UNITS V OS Input Offset Voltage V CM = V +, V 2 8 µv V CM = 4.5V, 4.5V 35 2, 3 µv Input Offset Voltage Match V CM = V + to V µv (Channel-to-Channel) V CM = 4.5V to 4.5V 45 8 µv I B Input Bias Current V CM = V na V CM = 4.5V 5 2 2, 3 na V CM = V na V CM = 4.5V 2 5 na Input Bias Current Match V CM = V +, V na (Channel-to-Channel) V CM = 4.5V, 4.5V 5 4 na I OS Input Offset Current V CM = V +, V 6 7 na V CM = 4.5V, 4.5V 4 3 2, 3 na Input Voltage Range V Input Noise Voltage.Hz to Hz 4 nv P-P e n Input Noise Voltage Density f = khz 2 nv/ Hz i n Input Noise Current Density f = khz.3 pa/ Hz A VOL Large-Signal Voltage Gain V O = 4.5V to 4.5V, , 6 V/mV R = k V O = V to V, R = 2k V/mV CMRR Common Mode Rejection V CM = V + to V 9 2 2, 3 db Ratio V CM = 4.5V to 4.5V 86 2 db CMRR Match V CM = V + to V db (Channel-to-Channel) V CM = 4.5V to 4.5V 8 db PSRR Power Supply Rejection V S = ±2V to ±6V , 3 db Ratio PSRR Match V S = ±2V to ±6V db (Channel-to-Channel) V OL Output Voltage Swing No Load mv (Low) (Note 4) I SINK = ma , 6 mv I SINK = ma 23 5 mv I SINK = 5mA 8 5 mv V OH Output Voltage Swing No Load mv (High) (Note 4) I SINK = ma , 6 mv I SINK = ma 42 8 mv I SINK = 5mA 3 8 mv I SC Short-Circuit Current ±5 ±3 ±7.5 ±2 2, 3 ma I S Supply Current per Amp , 3 ma GBW Gain-Bandwidth Product f = khz MHz SR Slew Rate A V =, R L = 2k, , 6 V/µs V O = ±V, Measure at V O = ±5V 2

3 TABLE A: ELECTRICAL CHARACTERISTICS (Post-Irradiation) V S = ±5V, V CM = V, T A = 25 C, unless otherwise noted RH498M Krad(Si) 2Krad(Si) 5Krad(Si) Krad(Si) 2Krad(Si) SYMBOL PARAMETER CONDITIONS NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS V OS Input Offset Voltage V CM = V +, V µv I B Input Bias Current V CM = V +, V na I OS Input Offset Current V CM = V +, V na Input Voltage Range V V + V V + V V + V V + V V + V A VOL Large-Signal Voltage V O = 4.5V to 4.5V, V/mV Gain R = k V O = V to V, V/mV R = 2k CMRR Common Mode V CM = V + to V db Rejection Ratio CMRR Match V CM = V + to V db (Channel-to-Channel) PSRR Power Supply V S = ±2V to ±6V db Rejection Ratio PSRR Match V S = ±2V to ±6V db (Channel-to-Channel) V OUT Output Voltage No Load mv Swing Low I SINK = ma 4 mv I SINK = ma mv Output Voltage No Load mv Swing High I SINK = ma mv I SINK = ma mv I SC Short-Circuit Current ± ± ± ± ± ma I S Supply Current ma GBW Gain-Bandwidth f = khz MHz Product SR Slew Rate A V =, R L = k, V/µs V O = ±V, Measure at V O = ±5V 3

4 RH498M TABLE 2: ELECTRICAL CHARACTERISTICS (Pre-Irradiation) V S = 3V, 5V; V CM = V OUT = half supply, unless otherwise noted. T A = 25 C SUB- 55 C T A 25 C SUB- SYMBOL PARAMETER CONDITIONS NOTES MIN TYP MAX GROUP MIN TYP MAX GROUP UNITS V OS Input Offset Voltage V CM = V +, V 5 8 µv V CM = V +.5V, V +.5V 3 2, 3 µv Input Offset Voltage Match V CM = V + to V µv (Channel-to-Channel) V CM = V +.5V, V +.5V 35 8 µv I B Input Bias Current V CM = V na V CM = V +.5V 45 2, 3 na V CM = V na V CM = V +.5V 45 na Input Bias Current Match V CM = V +, V na (Channel-to-Channel) V CM = V +.5V, V +.5V na I OS Input Offset Current V CM = V +, V 5 65 na V CM = V +.5V, V +.5V 5 3 2, 3 na Input Voltage Range V V + V +.5V V +.5V V Input Noise Voltage.Hz to Hz 4 nv P-P e n Input Noise Voltage Density f = khz 2 nv/ Hz i n Input Noise Current Density f = khz.3 pa/ Hz C IN Input Capacitance 5 pf A VOL Large-Signal Voltage Gain V S = 5V, V O = 75mV to 4.8V, , 6 V/mV R L = k V S = 3V, V O = 75mV to 2.8V, V/mV R L = k CMRR Common Mode Rejection V S = 5V, V CM = V + to V 76 9 db Ratio V S = 3V, V CM = V + to V , 3 db V S = 5V, V CM =.5V to 4.5V db V S = 3V, V CM =.5V to 2.5V db CMRR Match V S = 5V, V CM = V + to V 75 9 db (Channel-to-Channel) V S = 3V, V CM = V + to V , 3 db V S = 5V, V CM =.5V to 4.5V 66 db V S = 3V, V CM =.5V to 2.5V db PSRR Power Supply Rejection V S = 2.2V to 2V, , 3 db Ratio V CM = V O =.5V PSRR Match V S = 2.2V to 2V, db (Channel-to-Channel) V CM = V O =.5V V OL Output Voltage Swing No Load mv (Low) (Note 4) I SINK = ma , 6 mv I SINK = 2.5mA mv V OH Output Voltage Swing No Load mv (High) (Note 4) I SINK = ma , 6 mv I SINK = 2.5mA mv I SC Short-Circuit Current V S = 5V ± ±5 ± 2, 3 ma V S = 3V ±2. 9 ±5 ±9.5 ma I S Supply Current per Amp , 3 ma 4

5 TABLE 2: ELECTRICAL CHARACTERISTICS (Pre-Irradiation) V S = 3V, 5V; V CM = V OUT = half supply, unless otherwise noted. RH498M T A = 25 C SUB- 55 C T A 25 C SUB- SYMBOL PARAMETER CONDITIONS NOTES MIN TYP MAX GROUP MIN TYP MAX GROUP UNITS GBW Gain-Bandwidth Product V S = 5V, f = khz MHz SR Slew Rate V S = ±2.5V, A V =, , 6 V/µs R L = 2k,V O = ±2V, Measure at V O = ±V TABLE 2A: ELECTRICAL CHARACTERISTICS (Post-Irradiation) V S = 5V, 3V; V CM = half supply, T A = 25 C, unless otherwise noted Krad(Si) 2Krad(Si) 5Krad(Si) Krad(Si) 2Krad(Si) SYMBOL PARAMETER CONDITIONS NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS V OS Input Offset Voltage V CM = V +, V µv I B Input Bias Current V CM = V +, V na I OS Input Offset Current V CM = V +, V na Input Voltage Range V V + V V + V V + V V + V V + V A VOL Large-Signal Voltage V O = 75mV to V +.2V V/mV Gain R= k CMRR Common Mode V CM = V + to V db Rejection Ratio CMRR Match V CM = V + to V db (Channel-to-Channel) PSRR Power Supply V S = 2.2V to 2V, db Rejection Ratio V CM = V O =.5V PSRR Match V S = 2.2V to 2V, db (Channel-to-Channel) V CM = V O =.5V V OUT Output Voltage No Load mv Swing Low I SINK = ma 4 mv I SINK = 2.5mA mv Output Voltage No Load mv Swing High I SINK = ma mv I SINK = 2.5mA mv I SC Short-Circuit Current ±8 ±8 ±8 ±8 ±8 ma I S Supply Current ma SR Slew Rate V S = ±2.5V,A V =, V/µs R L = k, V O = ±2V, Measure at V O = ±V Note : Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: A heat sink may be required to keep the junction temperature below this absolute maximum rating when the output is shorted indefinitely. Note 3: Matching parameters are the difference between amplifiers A and B. Note 4: Output voltage swings are measured between the output and power supply rails. 5

6 RH498M TABLE 2: ELECTRICAL TEST REQUIRE E TS MIL-STD-883 TEST REQUIREMENTS SUBGROUP Final Electrical Test Requirements (Method 54) *,2,3,4,5,6 Group A Test Requirements (Method 55),2,3,4,5,6 Group B and D for Class S, and,2,3 End Point Electrical Parameters (Method 55) * PDA applies to subgroup. See PDA Test Notes. U W PDA Test Notes The PDA is specified as 5% based on failures from group A, subgroup, tests after cooldown as the final electrical test in accordance with method 54 of MIL-STD-883. The verified failures of group A, subgroup, after burn-in divided by the total number of devices submitted for burn-in in that lot shall be used to determine the percent for the lot. Linear Technology Corporation reserves the right to test to tighter limits than those given. TOTAL DOSE BIAS CIRCUIT 5k 4pF 5V 8V 5k + 5V RH498 TC 6

7 RH498M TYPICAL PERFOR A U W CE CHARACTERISTICS A VOL (V/mV) Large Signal Voltage Gain R L = k V S = ±5V V O = ±4.5V V S = 5V V O = 75mV TO 4.8V A VOL (V/mV) Large Signal Voltage Gain V S = ±5V V O = ±V R L = 2k SLEW RATE (V/µs) Slew Rate V S = ±5V V O = ±V R L = k 2 2 V S = 3V V O = 75mV TO 2.8V RH498 G RH498 G2 RH498 G3 Supply Current per Amp Input Offset Voltage Input Offset Current 4 V S = ±5, 5V, 3V 8 6 V S = ±5V, 5V, 3V V CM = V 8 6 V S = ±5V, 5V, 3V V CM = V I S (ma) 2 VOS (µv) 2 2 IOS (na) RH498 G4 8 RH498 G5 8 RH498 G6 Input Bias Current Common Mode Rejection Ratio Power Supply Rejection Ratio V S = ±5V, 5V, 3V V CM = V 3 2 V V CM V + 6 ±2V V S ±6V V CM = V 2 4 I B (na) 4 CMRR (db) 9 8 V S = ±5V V S = 5V V S = 3V PSRR (db) RH498 G7 RH498 G8 RH498 G9 7

8 RH498M TYPICAL PERFOR SUPPLY CURRENT PER AMPLIFIER (ma) A U W CE CHARACTERISTICS Supply Current vs Supply Voltage Supply Current vs Temperature 2. T A = 25 C T A = 25 C.5 T A = 55 C..5 SUPPLY CURRENT PER AMPLIFIER (ma) 2. V S = ±5V V S = 5V, V.5..5 INPUT BIAS CURRENT (na) Input Bias Current vs Common Mode Voltage V S = 5V, V T A = 25 C T A = 25 C T A = 55 C TOTAL SUPPLY VOLTAGE (V) TEMPERATURE ( C) COMMON MODE VOLTAGE (V) RH498 G RH498 G RH498 G2 OPEN LOOP VOLTAGE GAIN (V/mV) Open-Loop Voltage Gain vs Temperature R L = 2k V S = ±5V TEMPERATURE ( C) Output Saturation Voltage vs Load Current (Output High) RH498 G3 INPUT BIAS CURRENT (na) Input Bias Current vs Temperature NPN ACTIVE PNP ACTIVE TEMPERATURE ( C) V S = ±5V V CM = 5V V S = 5V, V V CM = 5V V S = ±5V V CM = 5V V S = 5V, V V CM = V Output Saturation Voltage vs Load Current (Output Low) RH498 G4 8 SATURATION VOLTAGE (mv) T A = 55 C T A = 25 C T A = 25 C... LOAD CURRENT (ma) RH498 G5... LOAD CURRENT (ma) LT/LT 83 REV A PRINTED IN USA Linear Technology Corporation 63 McCarthy Blvd., Milpitas, CA (48) FAX: (48) LINEAR TECHNOLOGY CORPORATION 23 SATURATION VOLTAGE (mv) T A = 25 C T A = 25 C T A = 55 C RH498 G6 ID No

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