RH1016M UltraFast Precision 10ns Comparator ABSOLUTE MAXIMUM RATINGS DESCRIPTION BURN-IN CIRCUIT PACKAGE INFORMATION

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1 DESCRIPTION The RH is an UltraFast TM ns comparator that interfaces directly to TTL/CMOS logic while operating from either ±V or single V supplies. Tight offset voltage specifi ca tions and high gain allow the RH to be used in precision applications. Matched complementary outputs further extend the versatility of this comparator. A unique output stage provides active drive in both directions for maximum speed into TTL/CMOS logic or passive loads, yet does not exhibit the large current spikes found in conventional output stages. This allows the RH to remain stable with the outputs in the active region which greatly reduces the problem of output glitching when the input signal is slow moving or is low level. The RH has a LATCH pin which will retain input data at the outputs, when held high. Quiescent negative power supply current is only ma. This allows the negative supply pin to be driven from virtually any supply voltage with a simple resistive divider. Device performance is not affected by variations in negative supply voltage. The wafer lots are processed to Linear Technology s inhouse Class S flow to yield circuits usable in stringent military applications. BURN-IN CIRCUIT RHM UltraFast Precision ns Comparator ABSOLUTE MAXIMUM RATINGS (Note ) Positive Supply Voltage (Note )...V Negative Supply Voltage... V Differential Input Voltage (Note )...±V +IN, IN and LATCH ENABLE Current (Note )...±ma Output Current (Continuous) (Note )...±ma Operating Temperature Range... C to C Storage Temperature Range... C to C Lead Temperature (Soldering, sec)... C L, LT, LTC and LTM are registered trademarks of Linear Technology Corporation. UltraFast is a trademark of Linear Technology Corporation. All other trademarks are the property of their respective owners. PACKAGE INFORMATION V MONITOR F V GND POWER V F.k k.k Ω Ω V + +IN IN V TOP VIEW W PACKAGE -LEAD CERPAC Q OUT Q OUT GND LATCH ENABLE V MONITOR GND MONITOR NOTES:. UNLESS OTHERWISE SPECIFIED, COMPONENT TOLERAES SHALL BE PER MILITARY SPECIFICATION.. T J = C MAXIMUM. T C = C MINIMUM. T A = C MINIMUM BURN-IN VOLTAGES: V =.V TO V V =.V TO V RH BURN-IN rhfa

2 RHM TABLE : ELECTRICAL CHARACTERISTICS (Preirradiation) V + = V, V = V, V OUT(Q) =.V, V LATCH = V, unless otherwise noted. T A = C SUB- C T A C SUB- SYMBOL PARAMETER CONDITIONS NOTES MIN TYP MAX GROUP MIN TYP MAX GROUP UNITS V OS Input Offset Voltage R S Ω ± ±, mv Δ V OS ΔT Input Offset Voltage Drift μv/ C I OS Input Offset Current.., μa I B Input Bias Current, μa Input Voltage Range.. V Single V Supply.. V CMRR Common Mode Rejection.V V CM.V, db PSRR Supply Voltage Positive Supply.V V +.V, db Rejection Negative Supply V V V, db A V Small-Signal Voltage Gain V V OUT V V/V V OH Output High Voltage V +.V, I OUT = ma.., V I OUT = ma., V V OL Output Low Voltage I SINK = ma.., V I + Positive Supply, ma Current I Negative Supply Current, ma V IH LATCH Pin High Input Voltage V V IL LATCH Pin Low Input. V Voltage I IL LATCH Pin Current V LATCH = V, μa t PD Propagation Delay ΔV IN = mv, OD = mv ns ΔV IN = mv, OD = mv ns rhfa

3 TABLE A: ELECTRICAL CHARACTERISTICS (Postirradiation) T A = C, V + = V, V = V, V OUT(Q) =.V, V LATCH = V, unless otherwise noted. RHM KRAD(Si) KRAD(Si) KRAD(Si) KRAD(Si) KRAD(Si) SYMBOL PARAMETER CONDITIONS NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS V OS Input Offset Voltage R S Ω ± ±. ± ±. ± mv I OS Input Offset Current. μa I B Input Bias Current μa Input Voltage Range V Single V Supply V CMRR Common Mode Rejection Ratio.V V CM.V db PSRR Supply Voltage Rejection Positive Supply db.v V +.V Negative Supply V V V db A V Small-Signal Voltage V V OUT V V/V Gain V OH Output High Voltage V +.V, I OUT = ma..... V I OUT = ma..... V V OL Output Low Voltage I SINK = ma..... V I + Positive Supply Current ma I Negative Supply Current ma I IL LATCH Pin Current V LATCH = V μa t PD Propagation Delay ΔV IN = mv, OD = mv ns ΔV IN = mv, OD = mv ns Note : Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note : Input offset voltage is defi ned as the average of the two voltages measured by forcing first one output, then the other to.v. Input offset current is defined in the same way. Note : Input bias current (I B ) is defi ned as the average of the two input currents. Note : t PD and Δt PD cannot be measured in automatic handling equipment with low values of overdrive. The RH is sample tested with a V step and mv overdrive. Correlation tests have shown that t PD and Δt PD limits shown can be guaranteed with this test if additional DC tests are performed to guarantee that all internal bias conditions are correct. For low overdrive conditions, V OS is added to overdrive. Note : Electrical specifi cations apply only up to.v. Note : Input voltage range is guaranteed in part by CMRR testing and in part by design and characterization. See the LT data sheet for discussion of input voltage range for supplies other than ±V or V. Note : This parameter is guaranteed to meet specifi ed performance through design and characterization. It has not been tested. rhfa

4 RHM TABLE : ELECTRICAL TEST REQUIREMENTS MIL-STD- TEST REQUIREMENTS SUBGROUP Final Electrical Test Requirements (Method ) *,,,, Group A Test Requirements (Method ) *,,,, Group B and D for Class S,,, End Point Electrical Parameters (Method ) *PDA applies to subgroup. See PDA Test Notes. PDA Test Notes The PDA is specifi ed as % based on failures from group A, subgroup, tests after cooldown as the fi nal electrical test in accordance with method of MIL-STD-. The verifi ed failures of group A, subgroup, after burn-in divided by the total number of devices submitted for burn-in in that lot shall be used to determine the percent for the lot. Linear Technology Corporation reserves the right to test to tighter limits than those given. TOTAL DOSE BIAS CIRCUIT V + V R C.k.μF R k R C.k.μF V + +IN IN V RH W TO FP Q Q GND EN V V RH BIAS rhfa

5 RHM TYPICAL PERFORMAE CHARACTERISTICS POSITIVE SUPPLY CURRENT (ma) Positive Supply Current NEGATIVE SUPPLY CURRENT (ma) Negative Supply Current OUTPUT HIGH VOLTAGE (V) Output High Voltage I OUT = ma.. RH G RH G RH G OUTPUT HIGH VOLTAGE (V) Output High Voltage Output Low Voltage Common Mode Rejection Ratio I OUT = ma RH G OUTPUT LOW VOLTAGE (V) I OUT = ma RH G COMMON MODE REJECTIION RATIO (db).v V CM.V RH G Input Bias Current Input Offset Current VS = ±V VS = ±V INPUT BIAS CURRENT (μa) INPUT BIAS CURRENT (μa) RH G RH G Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. rhfa

6 RHM TYPICAL PERFORMAE CHARACTERISTICS INPUT OFFSET VOLTAGE (mv) Input Offset Voltage R S Ω SMALL-SIGNAL VOLTAGE GAIN (V/V) Small-Signal Voltage Gain V V OUT V POSITIVE POWER SUPPLY REJECTION RATIO (db) Positive Power Supply Rejection Ratio V = V.V V +.V RH G RH G RH G NEGATIVE POWER SUPPLY REJECTION RATIO (db) Negative Power Supply Rejection Ratio V + = V V V V RH G LATCH PIN CURRENT (μa) LATCH Pin Current VS = ±V V LATCH = V RH G I.D. No. -- rhfa LT REV A PRINTED IN USA Linear Technology Corporation McCarthy Blvd., Milpitas, CA - () - FAX: () - LINEAR TECHNOLOGY CORPORATION

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