NE/SE5539 High frequency operational amplifier

Transcription

1 RF COMMUNICATIONS PRODUCTS April 15, 1992 IC11 Philips Semiconductors

2 DESCRIPTION The is a very wide bandwidth, high slew rate, monolithic operational amplifier for use in video amplifiers, RF amplifiers, and extremely high slew rate amplifiers. Emitter-follower inputs provide a true differential input impedance device. Proper external compensation will allow design operation over a wide range of closed-loop gains, both inverting and non-inverting, to meet specific design requirements. FEATURES Bandwidth Unity gain - 350MHz Full power - 48MHz GBW - 1.2GHz at 17dB Slew rate: 600/Vµs A VOL : 52dB typical Low noise - 4nV Hz typical MIL-STD processing available APPLICATIONS High speed datacom Video monitors & TV PIN CONFIGURATION + INPUT NC -V SUPPLY NC V OS ADJ / A V ADJ NC GROUND D, F, N Packages + Top View 14 - INPUT 13 NC 12 FREQUENCY COMPENS. 11 NC V NC OUTPUT Figure 1. Pin Configuration Satellite communications Image processing RF instrumentation & oscillators Magnetic storage Military communications SL00570 ORDERING INFORMATION DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG # 14-Pin Plastic Dual In-Line Package (DIP) 0 to +70 C NE5539N SOT Pin Plastic Small Outline (SO) package 0 to +70 C NE5539D SOT Pin Ceramic Dual In-Line Package 0 to +70 C NE5539F 0581B 14-Pin Ceramic Dual In-Line Package -55 to +125 C SE5539F 0581B ABSOLUTE MAIMUM RATINGS 1 SYMBOL PARAMETER RATING UNITS V CC Supply voltage ±12 V P DMA T A Maximum power dissipation, T A = 25 C (still-air) 2 F package N package D package Operating temperature range NE SE to to +125 T STG Storage temperature range -65 to +150 C T J Max junction temperature 150 C T SOLD Lead soldering temperature (10sec max) +300 C NOTES: 1. Differential input voltage should not exceed 0.25V to prevent excesive input bias current and common-mode voltage 2.5V. These voltage limits may be exceeded if current is limited to less than 10mA. 2. Derate above 25 C, at the following rates: F package at 9.3mW/ C N package at 11.6mW/ C D package at 7.9mW/ C W W W C C 1992 Apr

3 EQUIVALENT CIRCUIT (12) FREQUENCY COMP. (10) +V CC R 18 R 19 R 3 R 5 ( ) 14 INVERTING INPUT (+) 1 NON INVERTING INPUT Q 1 R 2 Q 4 Q R 6 6 R 8 Q 5 Q 2 Q 3 R 20 R 1 R 4 R 21 Q 7 Q 8 R 9 R k (8) OUTPUT (7) GRD R 13 Q 9 R 11 Q 10 R 12 R 14 Q 11 R 15 R 16 R 17 R 7 (3) V CC 5 SL00571 Figure 2. Equivalent Circuit DC ELECTRICAL CHARACTERISTICS V CC = ±8V, T A = 25 C; unless otherwise specified. SYMBOL PARAMETER TEST CONDITIONS SE5539 NE5539 MIN TYP MA MIN TYP MA UNITS V =0V Over temp 2 5 OS Input offset voltage V O 0V, R S = 100Ω mv TA = 25 C I OS I B CMRR V OS / T 5 5 µv/ C Input offset current Over temp T A = 25 C I OS / T na/ C Input bias current Over temp 6 25 T A = 25 C I B / T na/ C Common mode rejection ratio F = 1kHz, R S = 100Ω, V CM ±1.7V Over temp R IN Input impedance kω R OUT Output impedance Ω µa µa db 1992 Apr 15 3

4 DC ELECTRICAL CHARACTERISTICS (Continued) V CC = ±8V, T A = 25 C; unless otherwise specified. SYMBOL PARAMETER TEST CONDITIONS V OUT V OUT I CC+ I CC- PSRR A VOL A VOL A VOL Output voltage swing Output voltage swing Positive supply current Negative supply current Power supply rejection ratio Large signal voltage gain Large signal voltage gain Large signal voltage gain R L = 150Ω to GND and 470Ω to -V CC R L = 25Ω to GND Over temp R L = 25Ω to GND T A = 25 C +Swing -Swing +Swing -Swing +Swing -Swing SE5539 NE5539 MIN TYP MA MIN TYP MA UNITS V O = 0, R 1 =, Over temp V O = 0, R 1 =, T A = 25 C V O = 0, R 1 =, Over temp V O = 0, R 1 =, T A = 25 C V CC = ±1V, Over temp V CC = ±1V, T A = 25 C V V ma ma µv/v V O = +2.3V, -1.7V, R L = 150Ω to GND, 470Ω to -V CC db V O = +2.3V, -1.7V Over temp R L = 2Ω to GND T A = 25 C V O = +2.5V, -2.0V Over temp R L = 2Ω to GND T A = 25 C db db DC ELECTRICAL CHARACTERISTICS V CC = ±6V, T A = 25 C; unless otherwise specified. SYMBOL PARAMETER TEST CONDITIONS V OS I OS I B Input offset voltage Input offset current Input bias current SE5539 MIN TYP MA UNITS Over temp 2 5 T A = 25 C 2 3 Over temp T A = 25 C Over temp 5 20 T A = 25 C 4 10 CMRR Common-mode rejection ratio V CM = ±1.3V, R S = 100Ω db I CC+ I CC- Positive supply current Negative supply current PSRR Power supply rejection ratio V CC = ±1V V OUT Output voltage swing Over temp T A = 25 C Over temp 8 11 T A = 25 CmA 8 10 Over temp T A = 25 C Over +Swing R L = 150Ω to GND temp Swing and 390Ω to V CC T A = +Swing C Swing mv µa µa ma ma µv/v V 1992 Apr 15 4

5 AC ELECTRICAL CHARACTERISTICS V CC = ±8V, R L = 150Ω to GND and 470Ω to -V CC, unless otherwise specified. SYMBOL PARAMETER TEST CONDITIONS SE5539 NE5539 MIN TYP MA MIN TYP MA BW Gain bandwidth product A CL = 7, V O = 0.1 V P-P MHz Small signal bandwidth A CL = 2, R L = 150Ω MHz t S Settling time A CL = 2, R L = 150Ω ns SR Slew rate A CL = 2, R L = 150Ω V/µs t PD Propagation delay A CL = 2, R L = 150Ω ns Full power response A CL = 2, R L = 150Ω MHz Full power response A V = 7, R L = 150Ω MHz UNITS Input noise voltage R S = 50Ω, 1MHz 4 4 nv/ Hz Input noise current 1MHz 6 6 pa/ Hz NOTES: 1. External compensation. AC ELECTRICAL CHARACTERISTICS V CC = ±6V, R L = 150Ω to GND and 390Ω to -V CC, unless otherwise specified. SYMBOL PARAMETER TEST CONDITIONS BW SE5539 MIN TYP MA Gain bandwidth product A CL = Small signal bandwidth A CL = t S Settling time A CL = ns SR Slew rate A CL = V/µs t PD Propagation delay A CL = ns Full power response A CL = MHz NOTES: 1. External compensation. UNITS MHz TYPICAL PERFORMANCE CURVES NE5539 Open-Loop Phase 60 NE5539 Open-Loop Gain 0 50 PHASE (DEG) GAIN (db) MHz 10MHz 100MHz 1GHz SL MHz 10MHz 100MHz 1GHz SL00573 Figure 3. NE5539 Open-Loop Phase Figure 4. NE5539 Open-Loop Gain 1992 Apr 15 5

6 TYPICAL PERFORMANCE CURVES (Continued) Power Bandwidth (SE) Power Bandwidth (NE) 5 4 p p OUTPUT (V) GAIN ( 2) V CC = +8V R L = 2kΩ 3dB B.W 1 MHz 10MHz 100MHz 300Mhz p p OUTPUT (V) V CC = +6V R L = 150kΩ GAIN ( 2) 3dB B.W. 0 1 MHz 10MHz 100MHz 300Mhz SE5539 Open-Loop Gain vs Frequency Power Bandwidth 50 REF 3.04V P-P GAIN (db) V CC = +6V R L = 126Ω 0 o 1 MHz 10MHz 100MHz 300Mhz db BELOW REF GAIN ( 7) 10 R L = 150Ω 12 1MHz 10MHz 100MHz 300MHz SE5539 Open-Loop Phase vs Frequency Gain Bandwidth Product vs Frequency PHASE (DEG) V CC = ±6V R L = 126Ω 180 1MHz 10MHz 100MHz 300MHz GAIN (db) A V = 10 V CC = ±6V A V = 7.5 3dB BANDWIDTH R L = 150Ω 16 3dB BANDWIDTH MHz 10MHz 100MHz 300MHz NOTE: Indicates typical distribution 55 C T A 125 C SL00574 Figure 5. Typical Performance Curves 1992 Apr 15 6

7 CIRCUIT LAYOUT CONSIDERATIONS As may be expected for an ultra-high frequency, wide-gain bandwidth amplifier, the physical circuit is extremely critical. Bread-boarding is not recommended. A double-sided copper-clad printed circuit board will result in more favorable system operation. An example utilizing a 28dB non-inverting amp is shown in Figure 6. OPTIONAL OFFSET ADJ. +V V R 5 R F +V 1nF R 4 R NE RFC nF 470 R 3 75 V OUT 75Ω TERM V IN +1 R 6 R 2 75 RFC 1nF V 1nF R 1 = 75Ω 5% CARBON R 2 = 75Ω 5% CARBON R 3 = 75Ω 5% CARBON R 4 = 36K 5% CARBON R 5 = 20k TRIMPOT (CERMET) R F = 1.5k (28dB GAIN) R 6 = 470Ω 5% CARBON RFC 3T # 26 BUSS WIRE ON FERROCUBE VK /3B CORE BYPASS CAPACITORS 1nF CERAMIC (MEPCO OR EQUIV.) Top Plane Copper 1 (Component Side) Component Side (Component Layout) Bottom Plane Copper 1 V R 5 RFC R 2 (1) V IN R 6 R 4 R 1 +V C C RFC R F R 5 Figure 6. 28dB Non-Inverting Amp Sample PC Layout SL Apr 15 7

8 NE5539 COLOR VIDEO AMPLIFIER The NE5539 wideband operational amplifier is easily adapted for use as a color video amplifier. A typical circuit is shown in Figure 7 along with vector-scope1 photographs showing the amplifier differential gain and phase response to a standard five-step modulated staircase linearity signal (Figures 8, 9 and 10). As can be seen in Figure 9, the gain varies less than 0.5% from the bottom to the top of the staircase. The maximum differential phase shown in Figure 10 is approximately The amplifier circuit was optimized for a 75Ω input and output termionation impedance with a gain of approximately 10 (20dB). NOTE: 1. The input signal was 200mV and the output 2V. V CC was ±8V V 22nF V IN V 8 22nF 470 V 1 6dB LOSS 1 Z O = 75Ω Figure 9. Differential Gain <0.5% SL00578 NOTE: Instruments used for these measurements were Tektronix 146 NTSC test signal generator, 520A NTSC vectorscope, and 1480 waveform monitor. Figure 7. NE5539 Video Amplifier SL00576 Figure 8. Input Signal SL Apr 15 8

9 SL00579 Figure 10. Differential Gain +0.1 o +2V 8V Z IN = 500 Ω pF 14 + NE Z O = 50 Ω 1K 2K C LEAD 1.5pF Figure 11. Non-Inverting Follower SL V 8V 1K pF 14 + NE K 3.3pF Figure 12. Inverting Follower SL Apr 15 9

10 DIP14: plastic dual in-line package; 14 leads (300 mil) SOT27-1 April 15,

11 SO14: plastic small outline package; 14 leads; body width 3.9 mm SOT108-1 April 15,

12 0581B 14-PIN (300 mils wide) CERAMIC DUAL IN-LINE (F) PACKAGE E PIN # 1 D T SEATING PLANE (2.79) (1.27) (2.54) BSC (19.94) (19.13) (1.78) (1.27) (0.58) (0.38) T E D (0.254) (2.79) (1.27) (7.26) (6.22) (5.08) (4.19) (4.19) (3.18) NOTES: 1. Controlling dimension: Inches. Millimeters are shown in parentheses. 2. Dimension and tolerancing per ANSI Y14. 5M T, D, and E are reference datums on the body and include allowance for glass overrun and meniscus on the seal line, and lid to base mismatch. 4. These dimensions measured with the leads constrained to be perpendicular to plane T. 5. Pin numbers start with Pin #1 and continue counterclockwise to Pin #14 when viewed from the top (8.13) (7.37) (NOTE 4) (4.45) (3.68) (1.143) (0.51) BSC (7.62) (NOTE 4) (0.38) (0.25) (10.03) (7.62) B April 15,

13 DEFINITIONS Data Sheet Identification Product Status Definition Objective Specification Preliminary Specification Product Specification Formative or in Design Preproduction Product Full Production This data sheet contains the design target or goal specifications for product development. Specifications may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes at any time without notice, in order to improve design and supply the best possible product. Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. LIFE SUPPORT APPLICATIONS Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appliances, devices, or systems where malfunction of a Philips Semiconductors and Philips Electronics North America Corporation Product can reasonably be expected to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale. Philips Semiconductors 811 East Arques Avenue P.O. Box 3409 Sunnyvale, California Telephone Philips Semiconductors and Philips Electronics North America Corporation register eligible circuits under the Semiconductor Chip Protection Act. Copyright Philips Electronics North America Corporation 1992 All rights reserved. Printed in U.S.A. April 15,

14 This datasheet has been download from: Datasheets for electronics components.