LINEAR PRODUCTS. NE592 Video amplifier. Product specification April 15, Philips Semiconductors
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1 LINEAR PRODUCTS April 5, 992 Philips Semiconductors
2 DESCRIPTION The is a monolithic, two-stage, differential output, wideband video amplifier. It offers fixed gains of and 4 without external components and adjustable gains from 4 to with one external resistor. The input stage has been designed so that with the addition of a few external reactive elements between the gain select terminals, the circuit can function as a high-pass, low-pass, or band-pass filter. This feature makes the circuit ideal for use as a video or pulse amplifier in communications, magnetic memories, display, video recorder systems, and floppy disk head amplifiers. Now available in an 8-pin version with fixed gain of 4 without external components and adjustable gain from 4 to with one external resistor. PIN CONFIGURATIONS INPUT 2 NC G 2B GAIN SELECT G B GAIN SELECT V- NC OUTPUT D, N Packages INPUT NC G 2A GAIN SELECT G A GAIN SELECT V+ NC OUTPUT FEATURES 2MHz unity gain bandwidth Adjustable gains from to 4 Adjustable pass band No frequency compensation required Wave shaping with minimal external components MIL-STD processing available INPUT 2 G B GAIN SELECT V- OUTPUT 2 TOP VIEW D, N Packages TOP VIEW INPUT Figure. Pin Configuration G A GAIN SELECT V+ OUTPUT SL63 APPLICATIONS Floppy disk head amplifier Pulse amplifier in communications Magnetic memory Video recorder systems BLOCK DIAGRAM +V R R2 R8 R R9 Q6 Q5 Q4 Q3 INPUT GA Q Q2 INPUT 2 GB R R2 OUTPUT OUTPUT 2 R3 R5 G2A G2B Q7A Q7B Q8 Q9 Q Q R7A R7B R5 R6 R3 R4 -V SL64 Figure 2. Block Diagram 992 Apr
3 ORDERING INFORMATION DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG # 4-Pin Plastic Dual In-Line Package (DIP) to +7 C N4 SOT27-4-Pin Small Outline (SO) package to +7 C D4 SOT8-8-Pin Plastic Dual In-Line Package (DIP) to +7 C N8 SOT97-8-Pin Small Outline (SO) package to +7 C D8 SOT96- NOTES: N8, N4, D8 and D4 package parts also available in High gain version by adding H before package designation, i.e., HDB ABSOLUTE MAXIMUM RATINGS T A =+25 C, unless otherwise specified. SYMBOL PARAMETER RATING UNIT V CC Supply voltage ±8 V V IN Differential input voltage ±5 V V CM Common-mode input voltage ±6 V I OUT Output current ma T A Operating ambient temperature range to +7 C T STG Storage temperature range -65 to +5 C P D MAX Maximum power dissipation, T A =25 C (still air) D-4 package.98 W D-8 package.79 W N-4 package.44 W N-8 package.7 W NOTES:. Derate above 25 C at the following rates: D-4 package at 7.8mW/ C D-8 package at 6.3mW/ C N-4 package at.5mw/ C N-8 package at 9.3mW/ C 992 Apr 5 3
4 DC ELECTRICAL CHARACTERISTICS T A =+25 C V SS =±6V, V CM =, unless otherwise specified. Recommended operating supply voltages V S =±6.V. All specifications apply to both standard and high gain parts unless noted differently. SYMBOL PARAMETER TEST CONDITIONS Min Typ Max UNIT A VOL Differential voltage gain, standard part Gain R L =2kΩ, V OUT =3V P-P V/V R IN Gain 2 2, V/V Input resistance Gain 4. kω Gain 2 2, 4 3 kω C IN Input capacitance 2 Gain pf I OS Input offset current.4 5. µa I BIAS Input bias current 9. 3 µa V NOISE Input noise voltage BW khz to MHz 2 µv RMS V IN Input voltage range ±. V CMRR PSRR V OS Common-mode rejection ratio Gain 2 4 V CM ±V, f<khz 6 86 db Gain 2 4 V CM ±V, f=5mhz 6 db Supply voltage rejection ratio Gain 2 4 V S =±.5V 5 7 db Output offset voltage Gain R L =.5 V Gain 2 4 R L =.5 V Gain 3 3 R L = V V CM Output common-mode voltage R L = V V OUT Output voltage swing R L =2kΩ V differential R OUT Output resistance 2 Ω I CC Power supply current R L = 8 24 ma NOTES:. Gain select Pins G A and G B connected together. 2. Gain select Pins G 2A and G 2B connected together. 3. All gain select pins open. 4. Applies to 4-pin version only. 992 Apr 5 4
5 DC ELECTRICAL CHARACTERISTICS DC Electrical CharacteristicsV SS =±6V, V CM =, C T A 7 C, unless otherwise specified. Recommended operating supply voltages V S =±6.V. All specifications apply to both standard and high gain parts unless noted differently. SYMBOL PARAMETER TEST CONDITIONS Min Typ Max UNIT A VOL Differential voltage gain, standard part Gain R L =2kΩ, V OUT =3V P-P 25 6 V/V R IN Gain 2 2, V/V Input resistance Gain 2 2, 4 8. kω I OS Input offset current 6. µa I BIAS Input bias current 4 µa V IN Input voltage range ±. V CMRR PSRR V OS Common-mode rejection ratio Gain 2 4 V CM ±V, f<khz 5 db Supply voltage rejection ratio Gain 2 4 V S =±.5V 5 db Output offset voltage Gain Gain 2 4 Gain 3 3 R L = V OUT Output voltage swing differential R L =2kΩ 2.8 V I CC Power supply current R L = 27 ma NOTES:. Gain select Pins G A and G B connected together. 2. Gain select Pins G 2A and G 2B connected together. 3. All gain select pins open. 4. Applies to 4-pin versions only V AC ELECTRICAL CHARACTERISTICS T A =+25 C V SS =±6V, V CM =, unless otherwise specified. Recommended operating supply voltages V S =±6.V. All specifications apply to both standard and high gain parts unless noted differently. SYMBOL PARAMETER TEST CONDITIONS NE/SA592 UNIT Min Typ Max Bandwidth BW Gain 4 MHz Gain 2 2, 4 9 MHz Rise time t R Gain V OUT =V P-P.5 Gain 2 2, Propagation delay t PD Gain V OUT =V P-P 7.5 Gain 2 2, 4 6. NOTES:. Gain select Pins G A and G B connected together. 2. Gain select Pins G 2A and G 2B connected together. 3. All gain select pins open. 4. Applies to 4-pin versions only. 2 ns ns ns ns 992 Apr 5 5
6 TYPICAL PERFORMANCE CHARACTERISTICS Common-Mode Rejection Ratio as a Function of Frequency COMMON-MODE REJECTION RATIO db k k M M M FREQUENCY Hz Figure 3. SL65 Supply Current as a Function of Temperature 28 SUPPLY CURRENT ma SUPPLY VOLTAGE +V Figure 6. SL68 Output Voltage Swing as a Function of Frequency OUTPUT VOLTAGE SWING Vpp R L = kω FREQUENCY MHz Figure 4. SL66 Pulse Response as a Function of Supply Voltage OUTPUT VOLTAGE V R L = kω V S = +8V V S = +3V TIME ns Figure 7. SL Pulse Response GAIN R L = k TIME ns Figure 5. SL67 Pulse Response as a Function of Temperature OUTPUT VOLTAGE V V S = + 6V R L = kω T amb = o C T A = 7o C TIME ns Figure 8. SL6 992 Apr 5 6
7 TYPICAL PERFORMANCE CHARACTERISTICS (continued) Voltage Gain as a Function of Temperature RELATIVE VOLTAGE GAIN..8 V S = + 6V GAIN TEMPERATURE o C Figure 9. SL6 Gain vs. Frequency as a Function of Supply Voltage SINGLE ENDED VOLTAGE GAIN db V S = +3V FREQUENCY MHz Figure 2. R L = kω V S = +8V SL64 Gain vs. Frequency as a Function of Temperature Voltage Gain Adjust Circuit SINGLE ENDED VOLTAGE GAIN db T A = 55o C T A = 25o C V S = + 6V R L = kω FREQUENCY MHz SL µF.2µF 5 5 R ADJ k k SL65 Figure. Figure 3. Voltage Gain as a Function of Supply Voltage.4 RELATIVE VOLTAGE GAIN.3 T amb = 25o C GAIN SUPPLY VOLTAGE +V SL63 Figure. Voltage Gain as a Function of RADJ (Figure 3) DIFFERENTIAL VOLTAGE GAIN V/V.. K K K M R ADJ Ω Figure 4. f = khz FIGURE 3 SL Apr 5 7
8 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) Supply Current as a Function of Temperature 2 SUPPLY CURRENT ma Output Voltage Swing as a Function of Load Resistance OUTPUT VOLTAGE SWING Vpp TEMPERATURE o C SL K 5K K LOAD RESISTANCE Ω SL62 Figure 5. Figure 8. Differential Overdrive Recovery Time Input Resistance as a Function of Temperature OVERDRIVE RECOVERY TIME ns Ω INPUT RESISTANCE K DIFFERENTIAL INPUT VOLTAGE mv SL TEMPERATURE o C SL62 Figure 6. Figure 9. OUTPUT VOLTAGE SWING V OR OUTPUT SINK CURRENT ma Output Voltage and Current Swing as a Function of Supply Voltage VOLTAGE CURRENT SUPPLY VOLTAGE +V Figure 7. SL69 Input Noise Voltage as a Function of Source Resistance INPUT NOISE VOLTAGE µ Vrms BW = MHz K K SOURCE RESISTANCE Ω Figure 2. SL Apr 5 8
9 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) PHASE SHIFT DEGREES Phase Shift as a Function of Frequency Voltage Gain as a Function of Frequency VOLTAGE GAIN db GAIN T amb = 25o C R L = KΩ FREQUENCY MHz SL623 FREQUENCY MHz SL625 Figure 2. Figure 23. Phase Shift as a Function of Frequency Voltage Gain as a Function of Frequency PHASE SHIFT DEGREES GAIN -35 FREQUENCY MHz SL624 VOLTAGE GAIN db GAIN FREQUENCY MHz SL626 Figure 22. Figure 24. TEST CIRCUITS T A = 25 C, unless otherwise specified. V IN 592 R L V OUT 5Ω 5Ω.2µF e in 592.2µF e out e out 5Ω 5Ω k k Figure 25. Test Circuits SL Apr 5 9
10 TYPICAL APPLICATIONS 2r e +6 4 NOTE: V (s).4 4 v (s) Z(S) 2r e.4 4 Z(S) 32 V Z -6 Basic Configuration 7 V +6.2µF Q Q V 4 C µF 2KΩ 2KΩ V AMPLITUDE: - mv p-p FREQUENCY: -4 MHz NOTE: For frequency F << /2 π (32) C READ HEAD DIFFERENTIATOR/AMPLIFIER ZERO CROSSING DETECTOR Disc/Tape Phase-Modulated Readback Systems Figure 26. Typical Applications V O.4 x 4 C dvi dt Differentiation with High Common-Mode Noise Rejection SL628 FILTER NETWORKS Z NETWORK FILTER TYPE V (s) TRANSFER V (s) FUNCTION R L LOW PASS.4 4 L s R L R C HIGH PASS.4 4 R s s RC R L C BAND PASS.4 4 L s s 2 R Ls LC R L C BAND REJECT.4 4 R s 2 LC s 2 LC s RC NOTES: In the networks above, the R value used is assumed to include 2r e, or approximately 32Ω. S = jω ω = 2πf Figure 27. Filter Networks SL Apr 5
11 DIP4: plastic dual in-line package; 4 leads (3 mil) SOT27- April 5, 992
12 SO4: plastic small outline package; 4 leads; body width 3.9 mm SOT8- April 5, 992
13 DIP8: plastic dual in-line package; 8 leads (3 mil) SOT97- April 5, 992 2
14 SO8: plastic small outline package; 8 leads; body width 3.9mm SOT96- April 5, 992 3
15 DEFINITIONS Data Sheet Identification Product Status Definition Objective Specification Preliminary Specification Product Specification Formative or in Design Preproduction Product Full Production This data sheet contains the design target or goal specifications for product development. Specifications may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes at any time without notice, in order to improve design and supply the best possible product. Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. LIFE SUPPORT APPLICATIONS Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appliances, devices, or systems where malfunction of a Philips Semiconductors and Philips Electronics North America Corporation Product can reasonably be expected to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale. Philips Semiconductors 8 East Arques Avenue P.O. Box 349 Sunnyvale, California Telephone Philips Semiconductors and Philips Electronics North America Corporation register eligible circuits under the Semiconductor Chip Protection Act. Copyright Philips Electronics North America Corporation 992 All rights reserved. Printed in U.S.A. April 5, 992 4
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