Silicon N-Channel Power MOSFET CS150N03 A8

Transcription

1 Silicon N-Channel Power MOSFET General Description:, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is V DSS 30 V I D (Silicon limited current) 50 A I D (Package limited) 90 A PD 20. W R DS(ON)Typ 2.4 mω suitable for use as a load switch and PWM applications. The package form is TO-220AB, which accords with the RoHS standard. Features: Fast Switching Low ON Resistance(Rdson 3.5 mω) Low Gate Charge Low Reverse transfer capacitances % Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(TC= 25 unless otherwise specified) Symbol Parameter Rating Units V DSS Drain-to-Source Voltage 30 V I D I DM a Continuous Drain Current 50 A Continuous Drain Current T C = C 04 A Pulsed Drain Current 600 A V GS Gate-to-Source Voltage ±20 V a2 E AS Avalanche Energy 328 mj P D Power Dissipation 20. W Derating Factor above 25 C 0.96 W/ T J,T stg Operating Junction and Storage Temperature Range 50, 55 to 50 T L MaximumTemperature for Soldering 300 WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page of 0 208V0

2 Electrical Characteristics(TC= 25 unless otherwise specified): OFF Characteristics Symbol Parameter Test Conditions Rating Min. Typ. Max. V DSS Drain to Source Breakdown Voltage V GS=0V, I D=250µA V V DS =30V, V GS= 0V, T I DSS Drain to Source Leakage Current c = V DS =24V, V GS= 0V, µa T C = I GSS(F) Gate to Source Forward Leakage V GS=20V na I GSS(R) Gate to Source Reverse Leakage V GS =-20V na ON Characteristics Symbol Parameter Test Conditions R DS(ON) Drain-to-Source On-Resistance Rating Min. Typ. Max. Units Units V GS=0V,I D=50A mω V GS=4.5V,I D=40A mω V GS(TH) Gate Threshold Voltage V DS = V GS, I D = 250µA V Pulse width tp 300µs,δ 2% Dynamic Characteristics Rating Symbol Parameter Test Conditions Units Min. Typ. Max. R g Gate resistance V GS=0V, V DS=0V, f=mhz Ω C iss Input Capacitance V GS = 0V V DS =5V f =.0MHz C oss Output Capacitance C rss Reverse Transfer Capacitance pf Resistive Switching Characteristics Rating Symbol Parameter Test Conditions Min. Typ. Max. t d(on) Turn-on Delay Time V GS=0V,R G=6Ω V DD=5V,I D=50A tr Rise Time t d(off) Turn-Off Delay Time t f Fall Time Q g Total Gate Charge I D =50A V DD =5V V GS = 0V Q gs Gate to Source Charge Q gd Gate to Drain ( Miller )Charge Units ns nc WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 2 of 0 208V0

3 Source-Drain Diode Characteristics Symbol Parameter Test Conditions Rating Min. Typ. Max. I S Continuous Source Current (Body Diode) A I SM Maximum Pulsed Current (Body Diode) A V SD Diode Forward Voltage I S=50A,V GS=0V V trr Reverse Recovery Time di/dt=a/us Qrr Reverse Recovery Charge IF=50A nc Pulse width tp 300µs,δ 2% Units ns Symbol Parameter Max. Units RθJC Junction-to-Csae.04 /W RθJA Junction-to-Ambient 62.5 /W a :Repetitive rating; pulse width limited by maximum junction temperature a2 :L=0.mH,Ias=8A Start T J =25 WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 3 of 0 208V0

4 Characteristics Curve: μs 20 ID,Drain Current,A 0 Operation in This Area is Limited by RDS(on) μs ms 0ms PD,Power Dissipation,W DC SINGLE PULSE TC=25 TJ= VDS,Drain-to-Source Voltage,V TC,Case Temperature, Figure. Maximum Safe Operating Area Figure 2. Maximum Power Dissipation vs Case Temperature ID,Drain Current,A This Area is Limited by Package I D,Drain Current[A] Vgs=6.0V~0V Vgs=5.5V Vgs=5.0V Vgs=4.5V TC,Case Temperature, Note:.250us Pulse Test 2.Tc= V DS,Drain-to-Source Voltage[V] Figure 3. Maximum Continuous Drain Current vs Case Temperature Figure 4. Typical output Characteristics D= 0.5 ZθJA,Thermal Response[ /W] Single Pulse T, Rectangular Pulse Duration [sec] Figure 5 Maximum Effective Thermal Impedance, Junction to Case WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 4 of 0 208V0

5 0 Note:.VDS=0V 2.250us Pulse Test ID,Drain Current[A] 0 Tj=50 Tj=25 Is,Source Current[A] 0 Tj=50 Tj= V GS,Gate-to-Source Voltage[V] VSD,Source-to-Drain Voltage[V] Figure 6 Typical Transfer Characteristics Figure 7 Typical Body Diode Transfer Characteristics RDS(on),Drain-to-Source On Resistance,mΩ VGS = 0V PULSED TEST Tj = 25 RDS(on),(Normalized) Drain-to-Source On Resistance PULSED TEST VGS = 0V I D = 50A ID,Drain Current,A TJ,Junction Temperature( ) Figure 8. Drain-to-Source On Resistance vs Drain Current Figure 9. Normalized On Resistance vs Junction Temperature VGS(th),(Normalized) Threshold Voltage VGS = VDS ID = 250μA BVDSS,(Normalized) Drain-to-Source BVDSS,(Normalized) Breakdown Voltage Drain-to-Source Breakdown Voltage TJ,Junction Temperature( ) TJ,Junction Temperature( ) Figure0. Normalized Threshold Voltage vs Junction Temperature Figure. Normalized Breakdown Voltage vs Junction Temperature WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 5 of 0 208V0

6 Capacitance,pF 00 0 f = MHz C iss = C gs +C gd C oss = C ds+c gd C rss = C gd C oss C rss C iss VDS=5V I D=50A V DS,Drain-to-Source Voltage,V Qg,Gate Charge[nC] Figure 2. Capacitance Characteristics Figure 3 Typical Gate Charge vs Gate to Source Voltage WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 6 of 0 208V0

7 Test Circuit and Waveform Figure 4. Gate Charge Test Circuit Figure 5. Gate Charge Waveforms Figure 6. Resistive Switching Test Circuit Figure 7. Resistive Switching Waveforms WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 7 of 0 208V0

8 Figure 8. Diode Reverse Recovery Test Circuit Figure 9. Diode Reverse Recovery Waveform Figure20.Unclamped Inductive Switching Test Circuit Figure2.Unclamped Inductive Switching Waveform WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 8 of 0 208V0

9 Package Information: Items Values(mm) MIN MAX A B B C C D E F G.7.37 H L* N Q *adjustable TO-220AB Package WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 9 of 0 208V0

10 Limit The name and content of poisonous and harmful material in products Hazardous Substance Pb Hg Cd Cr(VI) PBB PBDE DIBP DEHP DBP BBP 0.% 0.% 0.0% 0.% 0.% 0.% 0.% 0.% 0.% 0.% Lead Frame Molding Chip Wire Bonding Solder Note :Means the hazardous material is under the criterion of 20/65/EU. :Means the hazardous material exceeds the criterion of 20/65/EU. The plumbum element of solder exist in products presently, but within the allowed range of Eurogroup s RoHS. Warnings. Exceeding the maximum ratings of the device in performance may cause damage to the device, even the permanent failure, which may affect the dependability of the machine. It is suggested to be used under 80 percent of the maximum ratings of the device. 2. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the heatsink. 3. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the device from being damaged by the static electricity when using it. 4. This publication is made by Huajing Microelectronics and subject to regular change without notice. WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Add: No.4 Liangxi RD. Wuxi, Jiangsu, China Mail:2406 HTUhttp://www. crhj.com.cnuth Tel: Fax: Marketing Part: Post:2406 Tel: / Fax: / Application and Service:Post:2406 Tel / Fax: /88050 WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 0 of 0 208V0