SSG4503 N-Ch: 6.9A, 30V, R DS(ON) 25 mω P-Ch: -6.3A, -30V, R DS(ON) 36 mω N & P-Ch Enhancement Mode Power MOSFET

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1 RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density, which provide excellent R DSON and gate charge for most of the synchronous buck converter applications. The meet the RoHS and Green Product requirement with full function reliability approved. SOP-8 B L D FEATURES Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available A C M N J K MARKING H G F E REF. Millimeter REF. Millimeter Min. Max. Min. Max. A H B J REF. C K 45 REF. D 0 8 L E M F N 0.25 REF. G 1.27 TYP. PACKAGE INFORMATION Package MPQ Leader Size SOP-8 2.5K 13 inch ABSOLUTE MAXIMUM RATINGS (T A=25 C unless otherwise specified) Parameter Symbol N-CH Rating P-CH Unit Drain-Source Voltage V DS V Gate-Source Voltage V GS ±20 V Continuous Drain Current GS=10V T A =25 C A T A =70 C I D A Pulsed Drain Current 3 I DM A Total Power Dissipation P D 1.5 W Operating Junction and Storage Temperature Range T J, T STG -55~150 C Thermal Resistance Rating Thermal Resistance from Junction to Ambient 1 R θja 85 Thermal Resistance from Junction to Ambient 2 R θja 135 C/ W Thermal Resistance from Junction to Case 1 R θjc Aug-2017 Rev. B Page 1 of 7

2 N-Ch ELECTRICAL CHARACTERISTICS (T J=25 C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Drain-Source Breakdown Voltage BV DSS V V GS=0, I D=250µA Gate Threshold Voltage V GS(th) 1-3 V V DS=V GS, I D=250µA Forward Transfer conductance gfs S V DS=5V, I D=6A Gate-Source Leakage Current I GSS - - ±100 na V DS=0, V GS= ±20V Drain-Source Leakage Current I DSS µa V DS=24V, V GS=0,T J=25 C Drain-Source Leakage Current I DSS µa V DS=24V, V GS=0, T J=55 C Drain-Source On-Resistance 4 R DS(ON) mω V GS=10V, I D=6A V GS=4.5V, I D=4A Total Gate Charge Q g Gate-Source Charge Q gs Gate-Drain Charge Q gd Turn-On Delay Time T d(on) Rise Time T r Turn-Off Delay Time T d(off) Fall Time T f Input Capacitance C iss Output Capacitance C oss Reverse Transfer Capacitance C rss Source-Drain Diode nc ns pf V DS=15V V GS=4.5V I D=6A V DS=15V V GS=10V R G=3.3Ω I D=6A V DS=15V V GS=0 f=1mhz Continuous Source Current 1 I S A Pulsed Source Current 3 I SM A Forward On Voltage 4 V SD V I S=6A, V GS=0V, T J=25 C 15-Aug-2017 Rev. B Page 2 of 7

3 P-Ch ELECTRICAL CHARACTERISTICS (T J=25 C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Drain-Source Breakdown Voltage BV DSS V V GS=0, I D= -250µA Gate Threshold Voltage V GS(th) V V DS=V GS, I D= -250µA Forward Transfer conductance gfs S V DS= -5V, I D= -6A Gate-Source Leakage Current I GSS - - ±100 na V DS=0, V GS= ±20V Gate-Source Leakage Current I DSS µa V DS= -24V, V GS=0,T J=25 C Gate-Source Leakage Current I DSS µa V DS= -24V, V GS=0,T J=55 C Drain-Source On-Resistance 4 R DS(ON) Total Gate Charge Q g Gate-Source Charge Q gs Gate-Drain Charge Q gd Turn-On Delay Time T d(on) Rise Time T r Turn-Off Delay Time T d(off) Fall Time T f Input Capacitance C iss Output Capacitance C oss Reverse Transfer Capacitance C rss V GS= -10V, I D= -6A mω V GS= -4.5V, I D= -4A Source-Drain Diode Continuous Source Current 1 I S A Pulsed Source Current 3 I SM A nc ns pf V DS= -20V V GS= -4.5V I D= -6A V DS= -24V V GS= -10V R G=3.3Ω I D= -1A V DS= -15V V GS=0 f=1mhz Forward On Voltage 4 V SD V I S= -6A, V GS=0V, T J=25 C Notes: 1. Surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2. When mounted on Min. copper pad. 3. Pluse width limited by maximum junction temperature, pulse width 300us, duty cycle 2% 4. The data tested by pulsed, pulse width 300us, duty cycle 2% 15-Aug-2017 Rev. B Page 3 of 7

4 N-Ch TYPICAL CHARACTERISTIC CURVES 15-Aug-2017 Rev. B Page 4 of 7

5 N-Ch TYPICAL CHARACTERISTIC CURVES 15-Aug-2017 Rev. B Page 5 of 7

6 P-Ch TYPICAL CHARACTERISTIC CURVES 15-Aug-2017 Rev. B Page 6 of 7

7 P-Ch TYPICAL CHARACTERISTIC CURVES 15-Aug-2017 Rev. B Page 7 of 7