SSFT V N-Channel MOSFET

Transcription

1 Main Product Characteristics SSFT3904 V DSS 30V R DS(on) 2.6mΩ (typ.) I D 110A Features and Benefits TO-220 Mark ing an d P i n Assignment Schematic Diagram Advanced MOSFET process technology Ideal for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175ºC operating temperature Description The SSFT3904 utilizes the latest processing techniques to achieve high cell density, low onresistance and high repetitive avalanche rating. These features make this device extremely efficient and reliable device for use in power switching applications and a wide variety of other applications. Absolute Max Ratings Symbol Parameter Max. Units I T C = 25 C Continuous Drain Current, V 10V1 110 I T C = 100 C Continuous Drain Current, V 10V1 80 A I DM Pulsed Drain Current2 440 P C = 25 C Power Dissipation3 100 W Linear Derating Factor 0.55 W/ C V DS Drain-Source Voltage 30 V V GS Gate-to-Source Voltage ± 20 V E AS Single Pulse Avalanche L=0.1mH2 320 mj I AR Avalanche L=0.1mH2 80 A T J,T STG Operating Junction and Storage Temperature Range -55 to C 1/7

2 Thermal Resistance SSFT3904 Symbol Characteristics Typ. Max. Units R θjc Junction-to-Case3 5 ºC/W R θja Junction-to-Ambient (t 10s) 4 62 ºC/W Junction-to-Ambient (PCB mounted, steady-state) 4 40 ºC/W Electrical A =25ºC unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 30 V V GS = 0V, I D = 250μA R DS(on) R DS(on) V GS(th) I DSS I GSS Static Drain-to-Source On-resistance V GS=10V,I D = 30A mω 3.8 T J = 125ºC Static Drain-to-Source On-resistance mω V GS=4.5V,I D = 16A 4.8 T J = 125ºC Gate Threshold Voltage 1 3 V DS = V GS, I D = 250μA V 3 T J = 125ºC Drain-to-Source Leakage Current 1 V DS = 30V,V GS = 0V μa 50 T J = 125 C Gate-to-Source Forward Leakage 100 V GS =20V na -100 V GS = -20V Q g Total Gate Charge 68 V DS=15V, Q gs Gate-to-Source Charge 19 nc I D=16A, Q gd Gate-to-Drain("Miller") Charge 25 V GS=5V t d(on) Turn-on Delay Time 19 t r Rise Time 18 V GS=10V, V DS =15V, ns t d(off) Turn-Off Delay Time 145 R GEN=6Ω, I D=1A t f Fall Time 63 C iss Input Capacitance 9291 V GS = 0V C oss Output Capacitance 748 pf V DS = 15V C rss Reverse Transfer Capacitance 702 ƒ = 1MHz Source-Drain Ratings and Characteristics I S I SM Symbol Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol 110 A (Body Diode) showing the Pulsed Source Current integral reverse 440 A (Body Diode) p-n junction diode. VSD Diode Forward Voltage V I S=50A, V GS=0V t rr Reverse Recovery Time 20 ns T J = 25 C, I F =32A, Q rr Reverse Recovery Charge 7.8 nc di/dt = 100A/μs 2/7

3 Test Circuits and Waveforms Switching Waveforms: Notes: 1The maximum current rating is limited by bond-wires. 2Repetitive rating; pulse width limited by max. junction temperature. 3The power dissipation P D is based on max. junction temperature, using junction-to-case thermal resistance. 4The value of R θja is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 C 3/7

4 Typical Electrical Characteristics Figure Typical Output Characteristics Figure 2. Typical Transfer Characteristics ID=50A IS,source to drain current(a) VSD,source to drain voltage(v) Figure 3. On-Resistance vs. Gate-Source Voltage Figure 4. Body-Diode Characteristics Figure 5. Gate-Charge Characteristics Figure 6. Capacitance Characteristics 4/7

5 Typical Thermal Characteristics Figure 7. Normalized Thermal transient Impedance Curve 5/7

6 Mechanical Data TO-220 PACKAGE OUTLINE DIMENSION Symbol Dimensions In Millimeters Dimensions In Inches Min Nom Max Min Nom Max A A A b b b C D D D E E ФP ФP e e1 L BSC 5.08BSC BSC 0.2BSC L1 7.35REF 0.29REF L L L Q Q Q Q /7

7 Ordering and Marking Information SSFT3904 Device Marking: SSFT3904 Package (Available) TO-220 Operating Temperature Range C : -55 to 175 ºC Devices per Unit Package Type Units/ Tube Tubes/Inner Units/Inner Inner es/carton TO Units/Carton Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) T j =125ºC to 80% of Max V DSS /V CES /V R 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) T J =125ºC to 100% of Max V GSS 168 hours 500 hours 1000 hours 3 lots x 77 devices 7/7 Doc.USSSFT3904x2.5