Enhancement Mode N-Channel Power MOSFET
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1 OSG65R900xTF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Easy to drive Applications Lighting Hard switching PWM Server power supply Charger
2 General Description OSG65R900xTF use advanced GreenMOS TM technology to provide low R DS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is suitable for active power factor correction and switching mode power supply applications., min@tjmax, pulse R DS(ON), VGS= V Q g 700 V 3.5 A 900 mω 7. nc Schematic and Package Information Schematic Diagram Pin Assignment Top View TO220F OSG65R900FTF TO252 OSG65R900DTF Absolute Maximum Ratings at =25 unless otherwise noted Parameter Symbol Value Unit Drain source voltage 650 V Gate source voltage ±30 V Continuous drain current ), T C=25 Continuous drain current ), T C= A Pulsed drain current 2), T C=25, pulse 3.5 A Power dissipation 3) for TO252, T C=25 Power dissipation 3) for TO220F, T C=25 25 P D 32 W Single pulsed avalanche energy 5) E AS 50 mj MOSFET dv/dt ruggedness, =0 480 V dv/dt 50 V/ns Reverse diode dv/dt, =0 480 V, I SD dv/dt 5 V/ns Operation and storage temperature T stg, -55 to 50 Oriental Semiconductor Copyright reserved /
3 Thermal Characteristics Parameter Symbol TO252 Value TO220F Unit Thermal resistance, junction-case R θjc C/W Thermal resistance, junction-ambient 4) R θja C/W Electrical Characteristics at =25 unless otherwise specified Parameter Symbol Min. Typ. Max. Unit Test condition 650 =0 V, =250 μa Drain-source breakdown voltage BS 700 V =0 V, =250 μa =50 Gate threshold voltage (th) V =, =250 μa = V, =2 A Drain-source on-state resistance R DS(ON).75 Ω = V, =2 A, =50 Gate-source leakage current I GSS 0 =30 V na -0 =-30 V Drain-source leakage current SS μa =650 V, =0 V Dynamic Characteristics Parameter Symbol Min. Typ. Max. Unit Test condition Input capacitance C iss 324. pf Output capacitance C oss 30. pf Reverse transfer capacitance C rss.6 pf Turn-on delay time t d(on) 22.8 ns Rise time t r.5 ns Turn-off delay time t d(off) 48.7 ns Fall time t f 4.9 ns =0 V, =50 V, ƒ=0 khz = V, =400 V, R G=2 Ω, =2 A Oriental Semiconductor Copyright reserved /
4 Gate Charge Characteristics Parameter Symbol Min. Typ. Max. Unit Test condition Total gate charge Q g 7. nc Gate-source charge Q gs.5 nc Gate-drain charge Q gd 3.5 nc Gate plateau voltage V plateau 5.8 V =2 A, =400 V, = V Body Diode Characteristics Parameter Symbol Min. Typ. Max. Unit Test condition Diode forward current I S 4.5 Pulsed source current I SP 3.5 A <V th Diode forward voltage V SD.3 V I S=4.5 A, =0 V Reverse recovery time t rr 47.0 ns Reverse recovery charge Q rr 0.92 μc Peak reverse recovery current I rrm 2.4 A V R=400 V, I S=2 A, di/dt=0 A/μs Note ) Calculated continuous current based on maximum allowable junction temperature. 2) Repetitive rating; pulse width limited by max. junction temperature. 3) Pd is based on max. junction temperature, using junction-case thermal resistance. 4) The value of R θja is measured with the device mounted on in 2 FR-4 board with 2oz. Copper, in a still air environment with T a=25 C. 5) V DD=0 V, R G=50 Ω, L=60 mh, starting =25 C. Oriental Semiconductor Copyright reserved /
5 Electrical Characteristics Diagrams, Drain current (A) V = 25 7 V 6.5 V 6 V 5.5 V 2 5 V = 4.5 V , Drain-source voltage (V), Drain current(a) = V = , Gate-source voltage(v) Figure, Typ. output characteristics Figure 2, Typ. transfer characteristics C, Capacitance (pf) f = 0 khz = 0 V C iss C oss C rss, Gate-source voltage(v) = 2 A = 400 V , Drain-source voltage (V) Q g, Gate charge(nc) Figure 3, Typ. capacitances Figure 4, Typ. gate charge BS, Drain-source breakdown voltage (V) = 250 μa = 0 V , Junction Temperature ( ) R DS(ON), On-resistance(Ω) = 2 A = V , Junction Temperature ( ) Figure 5, Drain-source breakdown voltage Figure 6, Drain-source on-state resistance Oriental Semiconductor Copyright reserved /
6 V th, Threshold voltage (V) = 250 μa I S, Source current (A) 0 0. = , Junction Temperature ( ) V SD, Source-Drain voltage (V) Figure 7, Threshold voltage Figure 8, Forward characteristic of body diode R DS(ON), On-resistance(Ω) =5.5 V 6 V 6.5 V 7 V V, Drain current (A) , Drain current(a) T C, Case Temperature ( ) Figure 9, Drain-source on-state resistance Figure, Drain current, Drain current(a) 0. R DS(ON) Limited μs 0 μs ms ms DC, Drain current(a) 0. R DS(ON) Limited μs 0 μs ms ms DC , Drain-source voltage(v) , Drain-source voltage(v) Figure, Safe operation area for TO252 T C=25 Figure 2, Safe operation area for TO220F T C=25 Oriental Semiconductor Copyright reserved /
7 Test circuits and waveforms Figure, Gate charge test circuit & waveform Figure 2, Switching time test circuit & waveforms Figure 3, Unclamped inductive switching (UIS) test circuit & waveforms Figure 4, Diode reverse recovery test circuit & waveforms Oriental Semiconductor Copyright reserved /
8 Package Information Figure, TO220F package outline dimension SYMBOL mm MIN NOM MAX E A A A c D H e L REF 2.54BSC L ФP ФP F G b b Oriental Semiconductor Copyright reserved /
9 Package Information Figure2, TO252 package outline dimension SYMBOL mm MIN NOM MAX A A A b b c D D E REF E e H BSC..50 L2 L BSC -.28 L θ 0-8 Oriental Semiconductor Copyright reserved /
10 Ordering Information Package Units/Tube Tubes/Inner Box Units/Inner Box Inner Box/Carton Box Units/Carton Box TO220F Package Units/Reel Reels/Inner Box Units/Inner Box Inner Box/Carton Box Units/Carton Box TO Product Information Product Package Pb Free RoHS Halogen Free OSG65R900FTF TO220F yes yes yes OSG65R900DTF TO252 yes yes yes Oriental Semiconductor Copyright reserved 207 /
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UNISONIC TECHNOLOGIES CO., LTD UTT1N6 1A, 6V N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT1N6 is an N-channel enhancement mode Power FET using UTC s advanced technology to provide customers
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UNISONIC TECHNOLOGIES CO., LTD 13A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 13N50 is a N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize
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UNISONIC TECHNOLOGIES CO., LTD UNA06R165M Advance POWER MOSFET 60A, 60V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET DESCRIPTION The UTC UNA06R165M is an N-channel Power MOSFET, it uses UTC s advanced
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UNISONIC TECHNOLOGIES CO., LTD 20NM60 Preliminary Power MOSFET 20A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 20NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics,
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Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification GP2M2A5H N-channel MOSFET BS R DS(on) 5V 18A
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UNISONIC TECHNOLOGIES CO., LTD 12A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTC s proprietary,
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600V Super-Junction Power MOSFET FEATURES Very low FOM R DS(on) Q g 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction
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UNISONIC TECHNOLOGIES CO., LTD 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low
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MMD50R380P 500V 0.38Ω N-channel MOSFET Description MMD50R380P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide
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UNISONIC TECHNOLOGIES CO., LTD 14.7A, 100V (D-S) N-CHANNEL POWER MOSFET DESCRIPTION The UTC is an N-Channel enhancement MOSFET, it uses UTC s advanced technology to provide customers with a minimum on-state
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