MDS9652E Complementary N-P Channel Trench MOSFET

Transcription

1 MDS9E Complementary N-P Channel Trench MOSFET MDS9E Complementary N-P Channel Trench MOSFET General Description The MDS9E uses advanced MagnaChip s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability Features N-Channel P-Channel V DS = 3V V DS = -3V = = V = = -V = V = -V =.V = -.V Applications Inverters General purpose applications (D) (D) 7(D) 8(D) D D (G) 3(S) (G) (S) G S G S Absolute Maximum Ratings (T a = o C unless otherwise noted) Rating Characteristics Symbol N-Ch P-Ch Unit Drain-Source Voltage V DSS 3-3 V Gate-Source Voltage S ± ± V Continuous Drain Current T a= o C A T a= o C A Pulsed Drain Current M 3-3 A T a= o C Power Dissipation () P D W T a= o C.8.8 Single Pulse Avalanche Energy () E AS 3 7 mj Junction and Storage Temperature Range T J, T stg -~ o C Thermal Characteristics Characteristics Device Symbol Rating Unit Thermal Resistance, Junction-to-Ambient(Steady-State) () N-Ch R θja. Thermal Resistance, Junction-to-Case N-Ch R θjc Thermal Resistance, Junction-to-Ambient(Steady-State) () P-Ch R θja. o C/W Thermal Resistance, Junction-to-Case P-Ch R θjc April.. Version.

2 MDS9E Complementary N-P Channel Trench MOSFET Ordering Information Part Number Temp. Range Package Packing RoHS Status MDS9EURH -~ o C SOIC-8L Tape & Reel Halogen Free N-channel Electrical Characteristics (T a = o C unless otherwise noted) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BV DSS = μa, = V Gate Threshold Voltage (th) V DS =, = μa V Drain Cut-Off Current SS V DS = V, = V -. Gate Leakage Current I GSS = ±V, V DS = V - - μa Drain-Source ON Resistance = V, = 7.A - 3 mω =.V, =.A Forward Transconductance g FS V DS = V, = 7.A - - S Dynamic Characteristics Total Gate Charge Q g Gate-Source Charge Q gs V DS = V, = 7.A, = V nc Gate-Drain Charge Q gd Input Capacitance C iss Reverse Transfer Capacitance C rss V DS = V, = V, f =.MHz pf Output Capacitance C oss Turn-On Delay Time t d(on) -. - Turn-On Rise Time t r = V,V DS = V, Turn-Off Delay Time t d(off) R L =.Ω, R GEN = Ω ns Turn-Off Fall Time t f -. - Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage V SD I S = A, = V -.7. V Body Diode Reverse Recovery Time t rr I F = 7.A, di/dt = A/μs ns Body Diode Reverse Recovery Charge Q rr nc Note :. Surface mounted FR- board with oz. Copper.. Starting TJ = C, L = mh, IAS = 8A, VDD = V, VGS = V April.. Version.

3 MDS9E Complementary N-P Channel Trench MOSFET P-channel Electrical Characteristics (T a = o C unless otherwise noted) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BV DSS = -μa, = V Gate Threshold Voltage (th) V DS =, = -μa V Drain Cut-Off Current SS V DS = -V, = V - -. Gate Leakage Current I GSS = ±V, V DS = V - - ± μa Drain-Source ON Resistance = -V, = -.A mω = -.V, = -.A - 33 Forward Transconductance g FS V DS = -V, = -.A - - S Dynamic Characteristics Total Gate Charge Q g -. - Gate-Source Charge Q gs V DS = -V, = -.A, = -V -. - nc Gate-Drain Charge Q gd Input Capacitance C iss Reverse Transfer Capacitance C rss V DS = -V, = V, f =.MHz pf Output Capacitance C oss Turn-On Delay Time t d(on) -. - Turn-On Rise Time t r = -V,V DS = -V, Turn-Off Delay Time t d(off) R L = Ω, R GEN = Ω ns Turn-Off Fall Time t f -. - Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage V SD I S = -A, = V V Body Diode Reverse Recovery Time t rr I F = -.A, di/dt = A/μs -. - ns Body Diode Reverse Recovery Charge Q rr nc Note :. Surface mounted RF board with oz. Copper.. Starting TJ = C, L = mh, IAS = -A, VDD = -V, VGS = -V April.. Version. 3

4 -I S, (Normalized) Drain-Source On-Resistance [mω ] [mω ] [mω ] MDS9E Complementary N-P Channel Trench MOSFET N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3 V.V.V.V 3 3.V 3 VGS=3.V =.V =V 3 V DS Fig. On-Region Characteristics 3 3 Fig. On-Resistance Variation with Drain Current and Gate Voltage =V =7.A =.V =.A T J, Junction Temperature [ o C] Fig.3 On-Resistance Variation with Temperature 8 Fig. On-Resistance Variation with Gate to Source Voltage *Note ; VDS=.V.. E-3 E- E- 3 Fig. Transfer Characteristics E V SD Fig. Body Diode Forward Voltage Variation with Source Current and Temperature April.. Version.

5 Z θ ja, Normalized Thermal Response [t] Capacitance [pf] MDS9E Complementary N-P Channel Trench MOSFET 8 * Note ; = 7.A 8 Q g [nc] Fig.7 Gate Charge Characteristics C rss C oss C iss C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd 3 V DS Fig.8 Capacitance Characteristics * Notes ;. = V. f = MHz 8 7 ms ms Operation in This Area is Limited by R DS(on) DC ms s Single Pulse R θ ja =. /W T a = - V DS Fig.9 Maximum Safe Operating Area 7 T a [ ] Fig. Maximum Drain Current Vs. Ambient Temperature D= Notes : Duty Factor, D=t /t PEAK T J = P DM * Z θ Ja * R θ Ja (t) + T a R Θ JA =. /W -3 single pulse t, Rectangular Pulse Duration [sec] Fig. Transient Thermal Response Curve April.. Version.

6 , (Normalized) Drain-Source On-Resistance [mω ] V -.V -.V -.V -I S [mω ] [mω ] MDS9E Complementary N-P Channel Trench MOSFET P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 7-3.V =-.V 3 =-V =-3.V 3 -V DS Fig. On-Region Characteristics 3 - Fig.3 On-Resistance Variation with Drain Current and Gate Voltage.8 9 *Note ; =-.A. 8.. =-V =-.A =-.V =-.A T J, Junction Temperature [ ] Fig. On-Resistance Variation with Temperature Fig. On-Resistance Variation with Gate to Source Voltage * Note ; V DS =-V.. E Fig. Transfer Characteristics E V SD Fig.7 Body Diode Forward Voltage Variation with Source Current and Temperature April.. Version.

7 Z θ Ja, Normalized Thermal Response [t] Capacitance [pf] MDS9E Complementary N-P Channel Trench MOSFET 8 * Note : = -.A 8 8 -Q g [nc] Fig.8 Gate Charge Characteristics C rss C oss C iss C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd Notes ;. = V. f = MHz 3 -V DS Fig.9 Capacitance Characteristics 7 ms ms ms s Operation in This Area is Limited by R DS(on) DC Single Pulse R θ ja =. /W T a = - -V DS Fig. Maximum Safe Operating Area 7 T a [ ] Fig. Maximum Drain Current vs. Ambient Temperature D= single pulse * Notes : Duty Factor, D=t /t PEAK T J = P DM * Z θ JC * R θ JC (t) + T C R Θ JA =. /W t, Rectangular Pulse Duration [s] Fig. Transient Thermal Response Curve April.. Version. 7

8 MDS9E Complementary N-P Channel Trench MOSFET Physical Dimensions 8 Leads SOIC Dimensions are in millimeters unless otherwise specified April.. Version. 8

9 MDS9E Complementary N-P Channel Trench MOSFET Worldwide Sales Support Locations MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. April.. Version. 9