Enhancement Mode N-Channel Power MOSFET
|
|
- Sylvia Austin
- 6 years ago
- Views:
Transcription
1 OSG60RK2x_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Low R DS(on) Low FOM Extremely low switching loss Good stability and uniformity Advanced GreenMOS TM technology Consumer electronics power supply LCD/LED/PDP Portable digital power management PFC Charger
2 General Description OSG60RK2x series use advanced GreenMOS TM technology to provide low R DS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is suitable for active power factor correction and switching mode power supply applications. V DS@Tjmax I D R DS(ON)@V GS=0V 650V(min) 4A.2Ω(max) TO-25,TO-252,TO-220F Package Information Schematic Diagram Pin Assignment-Top View TO-25 TO-252 TO-220F OSG60RK2A OSG60RK2D OSG60RK2F Absolute Maximum Ratings(TA=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage V DS 600 V Gate-Source Voltage V GS ±30 V Drain Current-Continuous (Note ) I D 4 A Drain Current- Pulsed (Note 2) I DM 2 A Power Dissipation (Note 3) for TO-25,TO-252 Power Dissipation (Note 3) for TO-220F 24 P D 28.4 W Single Pulsed-Avalanche Energy (Note 6) E AS 00 mj Operation and Storage Junction Temperature T STG,T J -55 to 50 Oriental Semiconductor Copyright reserved /
3 Thermal Characteristics Parameter Symbol Value TO25/TO252 TO220F Unit Thermal Resistance, Junction-to-Case R θjc C/W Thermal Resistance, Junction-to-Ambient (Note 4) R θja C/W Electrical Characteristics(TA=25 unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Test condition 600 V GS=0V, I D=250μA Drain-Source Breakdown Voltage BV DSS V V GS=0V,I D=250μA, T j=50 Gate Threshold Voltage V GS(th) V V DS=V GS, I D=250μA.0.2 V GS=0V,I D=2A Drain-Source On-state Resistance R DS(ON) 2.4 Ω V GS=0V,I D=2A, T j=50 Gate-Source Leakage Current I GSS 00 V GS=30V na -00 V GS=-30V Drain-to-Source leakage current I DSS μa V DS=600V,V GS=0V Dynamic Characteristics Input Capacitance C iss pf Output Capacitance C oss 2. pf Reverse Transfer Capacitance C rss 0.9 pf Turn-on Delay Time t d(on) 30.9 ns Turn-on Rise Time t r 20.7 ns Turn-Off Delay Time t d(off) 56.3 ns Turn-Off Fall Time t f 28.7 ns V GS = 0V, V DS = 50V, ƒ = MHZ V GS=0V, V DS =380V, R G=25Ω I D =4A Oriental Semiconductor Copyright reserved /
4 Gate Charge Characteristics Total Gate Charge Q g 8.2 nc Gate-Source Charge Q gs 2.2 nc Gate-Drain Charge Q gd 3.4 nc I D = 4A, V DS= 480V, V GS = 0V Body Diode Characteristics Body-diode Forward Current (NOTE 2) I S 4 Pulsed Source Current I SP 2 A V GS<V th Inverse Diode Forward Voltage V SD.3 V I S=4A, V GS=0V Reverse Recovery Time t rr 62 ns I S=4A, V GS=0V Reverse Recovery Charge Q rr.2 μc di/dt = 00A/μs Oriental Semiconductor Copyright reserved /
5 Typical Electrical and Thermal Characteristics I D, Drain-to-Source Current (A) 7 6 7V 0V 5 4 6V 3 2 5V V GS = 4V V DS, Drain-to-Source Voltage (V) Id,Drain Current(A) 0 VDS=20V 00 o C 25 o C V GS,Gate to Source Voltage(V) Figure. Typ. Output Characteristics Figure 2. Transfer Characteristics C, Capacitance(pF) C iss C oss V GS,Gate to Source Voltage(V) C rss V DS, Drain-to-Source Voltage (V) Q g,gate charge(nc) Figure 3. Typ. Capacitance Figure 4. Gate Charge V (BR)DSS, Drain-to-Source Breakdown Voltage (V) T J, Temperature ( O C ) R DS(on), Drain-source on-state resistance( ) T J,Juntion Temperature( o C) Figure 5. Drain-source breakdown voltage Figure 6. Drain-source on-resistance Oriental Semiconductor Copyright reserved /
6 Is,Reverse Drain Current(A) 0 00 o C 25 o C R DS(ON),On-Resistance( ) V GS =7V V GS =0V V SD, Source to Drain Voltage(V) I D,Drain Current(A) Figure 7. I S-V SD Figure 8. R DS(ON)-I D I D,Drain Current(A) 0. R DS(ON) Limited 00 s ms 0ms 00ms I D,Drain Current(A) 0. R DS(ON) Limited 00 s ms 0ms 00ms DC DC V DS,Drain to Source Voltage(V) V DS,Drain to Source Voltage(V) Figure 9. Safe Operation Area for TO25/TO252 Figure 0. Safe Operation Area for TO220F Oriental Semiconductor Copyright reserved /
7 Test circuits and waveforms Figure : Gate Charge Test Circuit & Waveform Figure 2: Resistive Switching Test Circuit & Waveforms Figure 3: Unclamped Inductive Switching (UIS) Test Circuit & Waveforms Figure 4: Diode Recovery Test Circuit & Waveforms Oriental Semiconductor Copyright reserved /
8 Package Information Figure TO-25 PACKAGE OUTLINE DIMENSION Symbol Dimension In Millimeters Dimension In Inches Min Nom Max Min Nom Max A A b b b2' b c D D 5.300REF 0.209REF E E e 2.286BSC 0.090BSC H L L L Oriental Semiconductor Copyright reserved /
9 Package Information Figure2 TO-252 PACKAGE OUTLINE DIMENSION Oriental Semiconductor Copyright reserved /
10 Package Information Figure3 TO220F PACKAGE OUTLINE DIMENSION Symbol Dimension In Millimeters Dimension In Inches Min Nom Max Min Nom Max E E E A A A A A5 c REF BSC D Q H e ФP L REF 6.70REF 2.54REF 3.8REF REF 0.264REF 0.00REF 0.25REF L L ФP ФP ФP ϴ 3 o 5 o 7 o 3 o 5 o 7 o ϴ2-45 o o - DEP F F F F G G G b b K R - 0.5REF REF - Oriental Semiconductor Copyright reserved /
11 Ordering Information Package Units/Tape Tapes/Inner Box Units/Inner Box Inner Box/Carton Box Units/Carton Box TO TO252 Option TO252 Option TO220F Note. Calculated continuous current based on maximum allowable junction temperature. 2. Repetitive rating; pulse width limited by max. junction temperature. 3. PD is based on max. junction temperature, using junction-to-case thermal resistance. 4. The value of R θja is measured with the device mounted on in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 C. 5. Declared by design, not subject to production. 6. V DD=50V, R G=25Ω, L=20mH, Starting T J=25 C. Oriental Semiconductor Copyright reserved 205 /
Enhancement Mode N-Channel Power MOSFET
OSG65R580x_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Low R DS(on) Low FOM Extremely low switching loss Good stability and uniformity Advanced GreenMOS TM technology Consumer
More informationN-Channel Power MOSFET
OSG55R580xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Easy to drive Applications Lighting Hard switching
More informationN-Channel Power MOSFET
OSG65RK4xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Easy to drive Applications Lighting Hard switching
More informationN-Channel Power MOSFET
OSG65R580xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Easy to drive Applications Lighting Hard switching
More informationN-Channel Power MOSFET
OSG65R580x_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Easy to drive Applications Lighting Hard switching
More informationN-Channel Power MOSFET
OSG65R290xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Easy to drive Applications Lighting Hard switching
More informationN-Channel Power MOSFET
OSG60R150xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Easy to drive Applications Lighting Hard switching
More informationN-Channel Power MOSFET
OSG65R200xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Easy to drive Applications Lighting Hard switching
More informationN-Channel Power MOSFET
OSG65R760x_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Easy to drive Applications Lighting Hard switching
More informationN-Channel Power MOSFET
OSG60R180x_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Easy to drive Applications Lighting Hard switching
More informationN-Channel Power MOSFET
OSG55R190xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Easy to drive Applications Lighting Hard switching
More informationEnhancement Mode N-Channel Power MOSFET
OSG65R099xZF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Ultra-fast and robust body diode Low RDS(on) & FOM Excellent low switching loss Excellent stability and uniformity Easy to drive
More informationEnhancement Mode N-Channel Power MOSFET
SFGRxF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low R DS(on) & FOM Extremely low switching loss Excellent stability and uniformity Fast switching and soft recovery Applications Consumer
More informationEnhancement Mode N-Channel Power MOSFET
SFG280N08xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low R DS(on) & FOM Extremely low switching loss Excellent stability and uniformity Fast switching and soft recovery Applications Consumer
More informationEnhancement Mode N-Channel Power MOSFET
SFG130NxF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Fast switching and soft recovery Applications Consumer
More informationN-Channel Power MOSFET
_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Easy to drive Applications Lighting Hard switching PWM Server
More informationEnhancement Mode N-Channel Power MOSFET
SFG180N10x_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low R DS(on) & FOM Extremely low switching loss Excellent stability and uniformity Fast switching and soft recovery Applications Consumer
More informationEnhancement Mode N-Channel Power MOSFET
SFG130N08xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low R DS(on) & FOM Extremely low switching loss Excellent stability and uniformity Fast switching and soft recovery Applications Consumer
More informationEnhancement Mode N-Channel Power MOSFET
SFG10R20xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low R DS(on) & FOM Extremely low switching loss Excellent stability and uniformity Fast switching and soft recovery Applications Consumer
More informationEnhancement Mode N-Channel Power MOSFET
OSG65R900xTF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Easy to drive Applications Lighting Hard switching
More informationEnhancement Mode N-Channel Power MOSFET
_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low R DS(on) & FOM Extremely low switching loss Excellent stability and uniformity Fast switching and soft recovery Applications Consumer electronic
More informationEnhancement Mode N-Channel Power MOSFET
OSG60R8xZF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Ultra-fast and robust body diode Low RDS(on) & FOM Excellent low switching loss Excellent stability and uniformity Applications Lighting
More informationEnhancement Mode N-Channel Power MOSFET
OSG55R160xZF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Ultra-fast and robust body diode Low RDS(on) & FOM Excellent low switching loss Excellent stability and uniformity Applications Lighting
More informationEnhancement Mode N-Channel Power MOSFET
SFG170N10xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Fast switching and soft recovery Applications Consumer
More informationEnhancement Mode N-Channel Power MOSFET
_Datasheet Enhancement Mode N-Channel Power MOSFET Features Ultra-fast and robust body diode Low RDS(on) & FOM Excellent low switching loss Excellent stability and uniformity Easy to drive Applications
More informationEnhancement Mode N-Channel Power MOSFET
SFS04R02xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low R DS(on) & FOM Extremely low switching loss Excellent stability and uniformity Fast switching and soft recovery Applications Consumer
More informationEnhancement Mode N-Channel Power MOSFET
_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low R DS(on) & FOM Extremely low switching loss Excellent stability and uniformity Fast switching and soft recovery Applications Consumer electronic
More informationEnhancement Mode N-Channel Power MOSFET
_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low R DS(on) & FOM Extremely low switching loss Excellent stability and uniformity Fast switching and soft recovery Applications Consumer electronic
More informationSSF11NS65UF 650V N-Channel MOSFET
Main Product Characteristics V DSS R DS(on) I D 650V 0.32Ω (typ.) 11A TO-220F Marking and Pin S c h e m a ti c Dia g r a m Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche
More informationSSFT V N-Channel MOSFET
Main Product Characteristics SSFT3904 V DSS 30V R DS(on) 2.6mΩ (typ.) I D 110A Features and Benefits TO-220 Mark ing an d P i n Assignment Schematic Diagram Advanced MOSFET process technology Ideal for
More informationSSF6014D 60V N-Channel MOSFET
Main Product Characteristics V DSS 60V R DS(on) 12mΩ(typ.) I D 60A Features and Benefits TO-252 (DPAK) Marki ng and P i n Assignment S c h e m a ti c Dia g r a m Advanced trench MOSFET process technology
More informationSSG4503 N-Ch: 6.9A, 30V, R DS(ON) 25 mω P-Ch: -6.3A, -30V, R DS(ON) 36 mω N & P-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density, which provide excellent R DSON
More informationHCD80R1K4E 800V N-Channel Super Junction MOSFET
HCD80R1K4E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
More informationSSF2341E. Main Product Characteristics V DSS -20V. R DS(on) 37mΩ (typ.) I D. Features and Benefit. Description
Main Product Characteristics V DSS -20V R DS(on) 37mΩ (typ.) I D -4A 1 SOT-23 Marking and Pin A s s i gnm e nt Schematic Diagram Features and Benefit Advanced MOSFET process technology Ideal for PWM, load
More informationHCI70R500E 700V N-Channel Super Junction MOSFET
HCI70R500E 700V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Higher dv/dt ruggedness Application
More informationUNISONIC TECHNOLOGIES CO., LTD 13NM50-U2
UNISONIC TECHNOLOGIES CO., LTD 13NM50-U2 13A, 500V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 13NM50-U2 is a Super Junction MOSFET Structure and is designed to have better characteristics, such
More informationSSG4504 N & P-Ch Enhancement Mode Power MOSFET N-Ch: 7.2 A, 40 V, R DS(ON) 30 mω P-Ch: -6.5A, -40 V, R DS(ON) 40 mω
RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density, which provide excellent R DSON
More informationMDF10N60G N-Channel MOSFET 600V, 10A, 0.7Ω
MDFNG N-channel MOSFET V MDFNG N-Channel MOSFET V, A,.7Ω General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high
More informationHCS80R1K4E 800V N-Channel Super Junction MOSFET
HCS80R1K4E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
More informationHCD80R650E 800V N-Channel Super Junction MOSFET
HCD80R650E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
More informationHCA80R250T 800V N-Channel Super Junction MOSFET
HCA80R250T 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
More informationTO-220F MDF Series S. Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V.
General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices
More informationMDF7N60 N-Channel MOSFET 600V, 7 A, 1.1Ω
General Description MDF7N is suitable device for SMPS, high Speed switching and general purpose applications. MDF7N N-Channel MOSFET V, 7 A,.Ω Features = V = 7.A @ = V R DS(ON).Ω @ = V Applications Power
More informationCharacteristics Symbol Rating Unit Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V. T C =25 o C I D
General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices
More informationMDF10N65B N-Channel MOSFET 650V, 10.0A, 1.0Ω
MDFN5B N-channel MOSFET 5V MDFN5B N-Channel MOSFET 5V,.A,.Ω General Description The MDFN5B MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high
More informationHCS80R380R 800V N-Channel Super Junction MOSFET
HCS8R38R 8V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity % Avalanche Tested Application Switch Mode Power Supply
More informationFeatures V DS = 700V I D = 5.0A R DS(ON) 1.8Ω. Applications. Characteristics Symbol Rating Unit
General Description The MDIBN7C use advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDIBN7C is suitable device for SMPS,
More informationMDF11N60 N-Channel MOSFET 600V, 11 A, 0.55Ω
General Description MDF11N6 is suitable device for SMPS, high Speed switching and general purpose applications. MDF11N6 N-Channel MOSFET 6V, 11 A,.55Ω Features = 6V = 11A @ V GS = V R DS(ON).55Ω @ V GS
More informationHCD80R600R 800V N-Channel Super Junction MOSFET
HCD80R600R 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested Application Switch Mode Power
More informationMDP15N60G / MDF15N60G N-Channel MOSFET 600V, 15A, 0.40Ω
MDP15N6G / MDF15N6G N-Channel MOSFET 6V MDP15N6G / MDF15N6G N-Channel MOSFET 6V, 15A,.4Ω General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 650 V V GS Gate-Source Voltage ±30 V
General Description These N-Channel enhancement mode power field effect transistors are using Super Junction technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationMDF11N60 N-Channel MOSFET 600V, 11A, 0.55Ω
MDF11N6 N-channel MOSFET 6V MDF11N6 N-Channel MOSFET 6V, 11A,.55Ω General Description The MDF11N6 uses advanced MagnaChip s MOSFET Technology, which provides low on-state resistance, high switching performance
More informationMDD4N25 N-Channel MOSFET 250V, 3.0A, 1.75Ω
MDDN5 N-Channel MOSFET 5V, 3.A,.75Ω General Description The MDDN5 uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
More informationMDF13N65B N-Channel MOSFET 650V, 14A, 0.46Ω
MDF13N65B N-Channel MOSFET 65V, 14A,.46Ω General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance
More informationProduct Summery. Applications
General Description The QM3056M6 is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter
More informationHCA60R080FT (Fast Recovery Diode Type) 600V N-Channel Super Junction MOSFET
HCA60R080FT (Fast Recovery Diode Type) 600V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested
More informationUNISONIC TECHNOLOGIES CO., LTD UFC8N80K
UNISONIC TECHNOLOGIES CO., LTD UFC8N80K 8A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UFC8N80K provide excellent R DS(ON), low gate charge and operation with low gate voltages. This device is suitable
More informationUNISONIC TECHNOLOGIES CO., LTD UF7476 Preliminary POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD UF7476 Preliminary POWER MOSFET N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF7476 is a N-channel Power MOSFET, it uses UTC s advanced technology to provide the customers
More informationMDHT4N20Y N-Channel MOSFET 200V, 0.85A, 1.35Ω
MDHTN0Y N-Channel MOSFET 00V, 0.85A,.35Ω General Description The MDHTN0Y uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
More informationHCS65R110FE (Fast Recovery Diode Type) 650V N-Channel Super Junction MOSFET
HCS65R110FE (Fast Recovery Diode Type) 650V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested
More informationMDS9652E Complementary N-P Channel Trench MOSFET
MDS9E Complementary N-P Channel Trench MOSFET MDS9E Complementary N-P Channel Trench MOSFET General Description The MDS9E uses advanced MagnaChip s MOSFET Technology to provide low on-state resistance,
More informationMDHT7N25 N-Channel MOSFET 250V, 1.4A, 0.55Ω
General Description The MDHT7N25 uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDHT7N25 is suitable device for SMPS,
More informationHCS70R350E 700V N-Channel Super Junction MOSFET
HCS70R350E 700V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Higher dv/dt ruggedness Application
More informationWPM3407 WPM3407. Description. Features. Application. Order information V (BR)DSS. R DS(on) Typ V V 30 V
WPM347 Single P-Channel, Description -3 V, -4.4A,Power MOSFET The WPM347 uses advanced trench technology to provide excellent R DS(ON) with low gate charge. This device is suitable for use in DC-DC conversion
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 8A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N50 is a N-channel enhancement mode power MOSFET using UTC s advanced planar stripe and DMOS technology to provide perfect
More informationG D S SSS1004U. Symbol Parameter Max. Units I TC = 25 C Continuous Drain Current, V 10V I DM Pulsed Drain Current 2 390
Main Product Characteristics V DSS 100V R DS (on) 4mΩ (typ.) G D S I D 130A 1 TO-220 SSS1004U G D S TO-220F SSS1004UF TO-263 SSS1004UA Schematic diagram Features and Benefits Advanced Process Technology
More informationMDD7N25 N-Channel MOSFET 250V, 6.2A, 0.55Ω
MDD7N25 N-Channel MOSFET 25V,.2A,.55Ω General Description The MDD7N25 uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 15A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC is an N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS technology.
More informationMDI5N40/MDD5N40 N-Channel MOSFET 400V, 3.4 A, 1.6Ω
General Description The MDI5N / MDD5N use advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDI5N is suitable device for
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 12A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC s advanced technology to provide customers with planar
More informationTO-252 (DPAK) Symbol Parameter Max. Units I TC = 25 C Continuous Drain Current, V -10V 1-30 I DM Pulsed Drain Current 2-120
Main Product Characteristics: V DSS -100V R DS (on) 36mΩ (typ.) G D I D -30A S Features and Benefits: TO-252 (DPAK) Marking and pin Assignment Schematic diagram Advanced MOSFET process technology Special
More informationHCS90R1K5R 900V N-Channel Super Junction MOSFET
HCS90RK5R 900V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested Application Switch Mode Power
More informationT C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V
40V N-Channel Trench MOSFET June 205 BS = 40 V R DS(on) typ = 3.3mΩ = 30 A FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge
More informationHCS80R850R 800V N-Channel Super Junction MOSFET
HCS80R850R 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested Application Switch Mode Power
More informationUNISONIC TECHNOLOGIES CO., LTD 20NM60 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD 20NM60 Preliminary Power MOSFET 20A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 20NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics,
More informationUNISONIC TECHNOLOGIES CO., LTD 13NM60
UNISONIC TECHNOLOGIES CO., LTD 13NM60 13A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 13NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 20 V V GS Gate-Source Voltage ±10 V
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationMDF9N50 N-Channel MOSFET 500V, 9.0 A, 0.85Ω
General Description The MDF9N5 uses advanced MagnaChip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF9N5 is suitable device for SMPS,
More informationMDFS11N60 N-Channel MOSFET 600V, 11A, 0.55Ω
General Description The MDFS11N6 uses advanced MagnaChip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDFS11N6 is suitable device for SMPS,
More informationMDD1902 Single N-channel Trench MOSFET 100V, 40A, 28mΩ
MDD192 Single N-Channel Trench MOSFET V MDD192 Single N-channel Trench MOSFET V, 4A, 28mΩ General Description Features The MDD192 uses advanced MagnaChip s MOSFET Technology, which provides high performance
More informationUNISONIC TECHNOLOGIES CO., LTD UTT30P04 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD UTT30P04 Preliminary Power MOSFET -21A, -40V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30P04 is a P-channel power MOSFET providing customers with fast switching, ruggedized
More informationHFP4N65F / HFS4N65F 650V N-Channel MOSFET
HFP4N65F / HFS4N65F 650V N-Channel MOSFET Features Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant Key Parameters May 2016
More informationUNISONIC TECHNOLOGIES CO., LTD UTT80P06 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD UTT80P06 Preliminary Power MOSFET -80A, -60V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80P06 is a P-channel power MOSFET using UTC s advanced technology to provide the
More informationUNISONIC TECHNOLOGIES CO., LTD 6N65K-MTQ
UNISONIC TECHNOLOGIES CO., LTD 6N65K-MTQ 6A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N65K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time,
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 16A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 16N50 is a N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS
More informationUNISONIC TECHNOLOGIES CO., LTD 6NM80 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD 6NM80 Preliminary Power MOSFET 6.0A, 800V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 6NM80 is a Super Junction MOSFET Structure and is designed to have better characteristics,
More informationGGVF6N70F/MJ(G) 6A, 700V, N-Channel MOSFET
General Description The GGVF6N70F/MJ is an N-channel enhancement mode power MOS field effect transistor. The improved planar stripe cell and the improved guard ring terminal have been especially tailored
More informationSIS2040 V V Complementary MOSFET. General Features. N-Channel PRODUCT SUMMARY. P-Channel PRODUCT SUMMARY
20V Complementary MOSFET General Features N-Channel PRODUCT SUMMARY VDSS ID RDS(ON)(mΩ) Typ 20 @ VGS=4.5V 20V 4.5A 25 @ VGS=2.5V Super High Dense Cell Design Reliable and Rugged SOT-23-6L package P-Channel
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 60 V V GS Gate-Source Voltage ±20 V
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationUNISONIC TECHNOLOGIES CO., LTD UNA06R165M Advance POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD UNA06R165M Advance POWER MOSFET 60A, 60V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET DESCRIPTION The UTC UNA06R165M is an N-channel Power MOSFET, it uses UTC s advanced
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 15A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N60 is an N-channel mode power MOSFET using UTC s advanced technology to provide costumers with planar stripe and DMOS
More informationUNISONIC TECHNOLOGIES CO., LTD UF5305 Preliminary POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD UF5305 Preliminary POWER MOSFET -31A, -55V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UF5305 is a P-channel Power MOSFET, it uses UTC s advanced technology to provide the
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage V V GS Gate-Source Voltage ±8 ±8 V
General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 5A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge,
More informationUNISONIC TECHNOLOGIES CO., LTD UTT18P10
UNISONIC TECHNOLOGIES CO., LTD UTT18P10-100V, -18A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT18P10 is a P-channel power MOSFET using UTC s advanced technology to provide the customers with high switching
More informationUNISONIC TECHNOLOGIES CO., LTD 5N60
UNISONIC TECHNOLOGIES CO., LTD 5N60 5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time,
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 171A, 150V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET POWER MOSFET DESCRIPTION The UTC is a N-channel enhancement mode power MOSFET using UTC s advanced technology to
More informationSOT-23. Symbol Characterizes Typ. Max. Units R θja Junction-to-ambient (t 10s) C /W
Main Product Characteristics: V DSS -20V D R DS (on) 60mΩ (typ.) G I D -3A 1 SOT-23 Marking and pin Assignment S Schematic diagram Features and Benefits: Advanced MOSFET process technology Special designed
More informationUNISONIC TECHNOLOGIES CO., LTD UT23P09 Preliminary POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD UT23P09 Preliminary POWER MOSFET -23A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT23P09 is a P-channel Power MOSFET, it uses UTC s advanced technology to provide
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 6A, 600V N-CHANNEL POWER MOSFET DESCRIPTION TO-220 TO-220F The UTC 6N60-P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching
More information