SSG4504 N & P-Ch Enhancement Mode Power MOSFET N-Ch: 7.2 A, 40 V, R DS(ON) 30 mω P-Ch: -6.5A, -40 V, R DS(ON) 40 mω

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1 RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density, which provide excellent R DSON and gate charge for most of the synchronous buck converter applications. The meet the RoHS and Green Product requirement with full function reliability approved. SOP-8 B L D M FEATURES Advanced high cell density Trench technology Super Low Gate Charge Green Device Available H G A C J K F N E MARKING 4504SS = Date Code REF. Millimeter REF. Millimeter Min. Max. Min. Max. A H B J REF. C K 45 REF. D 0 8 L E M F N 0.25 REF. G 1.27 TYP. PACKAGE INFORMATION Package MPQ Leader Size S1 D1 SOP-8 2.5K 13 inch G1 D1 S2 D2 G2 D2 ABSOLUTE MAXIMUM RATINGS Parameter Symbol N-Ch Ratings P-Ch Unit Drain-Source Voltage V DS V Gate-Source Voltage V GS ±20 ±20 V Continuous Drain Current 1, V GS@10V T A=25 C A T A=100 C I D A Pulsed Drain Current 3 I DM A Total Power Dissipation T C=25 C P D 2.5 W Operating Junction and Storage Temperature Range T J, T STG -55~150 C Thermal Data Thermal Resistance Junction-ambient 1 R θja 85 Thermal Resistance Junction-ambient 2 R θja 135 C / W Thermal Resistance Junction-case 1 R θjc Aug-2017 Rev. B Page 1 of 7

2 N-CHANNEL ELECTRICAL CHARACTERISTICS (T J=25 C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BV DSS V V GS=0, I D=250uA Gate Threshold Voltage V GS(th) V V DS=V GS, I D=250uA Forward Transfer conductance g fs S V DS=5V, I D=6A Gate-Source Leakage Current I GSS - - ±100 na V GS = ±20V T J=25 C Drain-Source Leakage Current I DSS TJ=55 C ua V DS=32V, V GS=0 Static Drain-Source On-Resistance 4 R DS(ON) Total Gate Charge Q g Gate-Source Charge Q gs Gate-Drain ( Miller ) Change Q gd Turn-on Delay Time T d(on) Rise Time T r Turn-off Delay Time T d(off) Fall Time T f Input Capacitance C iss Output Capacitance C oss Reverse Transfer Capacitance C rss mω V GS=10V, I D=6A V GS=4.5V, I D=4A Source-Drain Diode nc ns pf I D=6A V DS=20V V GS=4.5V V DD=20V V GS=10V I D=1A R G=3.3Ω R D=20Ω V GS=0 V DS=15V f=1.0mhz Forward On Voltage 4 V SD V I S=1A, V GS=0, T J=25 C Continuous Source Current 1 I S A Pulsed Source Current 3 I SM A Notes: 1. Surface mounted on a 1 inch 2 FR-4 board with 2OZ copper 2. When mounted on Min. copper pad. 3. Pulse width limited by maximum junction temperature, pulse width 300us, duty cycle 2% 4. The data tested by pulsed, pulse width 300us, duty cycle 2% 28-Aug-2017 Rev. B Page 2 of 7

3 P-CHANNEL ELECTRICAL CHARACTERISTICS (T J=25 C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BV DSS V V GS=0, I D= -250uA Gate Threshold Voltage V GS(th) V V DS=V GS, I D= -250uA Forward Transfer conductance g fs S V DS= -5V, I D= -6A Gate-Source Leakage Current I GSS - - ±100 na V GS=±20V T J=25 C Drain-Source Leakage Current I DSS TJ=55 C ua V DS= -32V, V GS=0 Static Drain-Source On-Resistance 4 R DS(ON) Total Gate Charge Q g Gate-Source Charge Q gs Gate-Drain ( Miller ) Change Q gd Turn-on Delay Time T d(on) Rise Time T r Turn-off Delay Time T d(off) Fall Time T f Input Capacitance C iss Output Capacitance C oss Reverse Transfer Capacitance C rss mω V GS= -10V, I D= -6A V GS= -4.5V, I D= -4A Source-Drain Diode nc ns pf I D= -6A V DS= -20V V GS= -4.5V V DS= -15V V GS= -10V I D= -1A R G=3.3Ω R D=20Ω V GS=0 V DS= -15V f=1.0mhz Forward On Voltage 1 V SD V I S= -1A, V GS=0V, T J=25 C Continuous Source Current 3 I S A Pulsed Source Current 4 I SM A Notes: 1. Surface mounted on a 1 inch 2 FR-4 board with 2OZ copper 2. When mounted on Min. copper pad. 3. Pulse width limited by maximum junction temperature, pulse width 300us, duty cycle 2% 4. The data tested by pulsed, pulse width 300us, duty cycle 2% 28-Aug-2017 Rev. B Page 3 of 7

4 CHARACTERISTIC CURVE (N-Ch) 28-Aug-2017 Rev. B Page 4 of 7

5 CHARACTERISTIC CURVE (N-Ch) 28-Aug-2017 Rev. B Page 5 of 7

6 CHARACTERISTIC CURVE (P-Ch) 28-Aug-2017 Rev. B Page 6 of 7

7 CHARACTERISTIC CURVE (P-Ch) 28-Aug-2017 Rev. B Page 7 of 7