SSF2341E. Main Product Characteristics V DSS -20V. R DS(on) 37mΩ (typ.) I D. Features and Benefit. Description

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1 Main Product Characteristics V DSS -20V R DS(on) 37mΩ (typ.) I D -4A 1 SOT-23 Marking and Pin A s s i gnm e nt Schematic Diagram Features and Benefit Advanced MOSFET process technology Ideal for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150 C operating temperature Description The SSF2341E utilizes the latest processing techniques to achieve high cell density, low onresistance and high repetitive avalanche rating. These features make this device extremely efficient and reliable for use in power switching applications and a wide variety of other applications. Absolute Max Ratings (T A =25 C unless otherwise specified) Symbol Parameter Max. Units I T C = 25 C Continuous Drain Current, V 10V -4 1 I T C = 70 C Continuous Drain Current, V 10V A I DM Pulsed Drain Current 2-30 P C = 25 C Power Dissipation W V DS Drain-Source Voltage -20 V V GS Gate-to-Source Voltage ± 8 V T J T STG Operating Junction and Storage Range -55 to +150 C Thermal Resistance Symbol Characteristics Typ. Max. Units R θja Junction-to-ambient (t 10s) 4 90 C/W 1/7

2 Electrical Characteristics (T A =25 C unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage -20 V V GS = 0V, I D = -250μA V GS=-4.5V,I D = -4A R DS(on) V GS(th) I DSS I GSS Static Drain-to-Source On-resistance mω V GS=-2.5V,I D = -4A V GS=-1.8V,I D = -2A Gate Threshold Voltage V DS = V GS, I D = -250μA V T J =125 C Drain-to-Source Leakage Current -1 V DS = -16V,V GS = 0V μa -50 T J =125 C Gate-to-Source Forward Leakage 10 V GS =8V μa -10 V GS = -8V Q g Total Gate Gharge 10 I D = -4A, Q gs Gate-to-Source Charge 0.77 nc V DS=-10V Q gd Gate-to-Drain("Miller") Charge 3.5 V GS = -4.5V t d(on) Turn-on Delay Time 10 t r Rise Time 8.6 V GS=-4.5V, V DS =-10V, ns t d(off) Turn-Off Delay Time 29 R GEN=3Ω, t f Fall Time 13 C iss Input Capacitance 939 V GS = 0V C oss Output Capacitance 130 pf V DS =-10V C rss Reverse Transfer Capacitance 111 ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S I SM Continuous Source Current MOSFET symbol -4 1 A (Body Diode) showing the Pulsed Source Current integral reverse -30 A (Body Diode) p-n junction diode. V SD Diode Forward Voltage V I S=1A, V GS=0V trr Reverse Recovery Time 8.7 ns T J = 25 C, I F =-4A Qrr Reverse Recovery Charge 2.3 nc di/dt = 100A/μs 2/7

3 Test Circuits and Waveforms E AS Test Circuit: Gate Charge Test Circuit: Switching Time Test Circuit: Switching Waveforms: Notes: 1Calculated continuous current based on maximum allowable junction temperature. 2Repetitive rating; pulse width limited by max. junction temperature. 3The power dissipation P D is based on max. junction temperature, using junction-to-case thermal resistance. 4The value of R θja is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 C 3/7

4 Typical Electrical and Thermal Characteristics Figure 1. Typical Output Characteristics Figure 2. Gate to Source Cut-off Voltage Figure 3. Drain-to-Source Breakdown Voltage Vs. Case Figure 4. Normalized On-Resistance Vs. Case 4/7

5 Typical Electrical and Thermal Characteristics Figure 5. Maximum Drain Current Vs. Case Figure 6. Typical Capacitance Vs. Drain-to-Source Voltage Figure 7. Maximum Effective Transient Thermal Impedance Junction-to-Case 5/7

6 Mechanical Data 6/7

7 Ordering and Marking Information Device Marking: 2341E Package (Available) SOT-23 Operating Range C : -55 to 150 ºC Devices per Unit Package Type Units/ Tape Tapes/ Inner Box Units/ Inner Box Inner Boxes/ Carton Box Units/ Carton Box SOT Reliability Test Program Test Item Conditions Duration Sample Size High Reverse Bias(HTRB) High Gate Bias(HTGB) T j =125 C to % of Max V DSS /V CES /V R T j = % of Max V GSS 168 hours 500 hours 1000 hours 168 hours 500 hours 1000 hours 3 lots x 77 devices 3 lots x 77 devices 7/7 Doc.USSSF2341Ex1.1