HRLD150N10K / HRLU150N10K 100V N-Channel Trench MOSFET

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1 HRLD15N1K / HRLU15N1K 1V N-Channel Trench MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 8 nc (Typ.) Extended Safe Operating Area Lower R DS(ON) : 13 =1V Lower R DS(ON) : 14 =4.5V 1% Avalanche Tested BS = 1 V R DS(on) typ =13 = 7 A Mar 216 D-PAK I-PAK HRLD15N1K HRLU15N1K 1.Gate 2. Drain 3. Source 3 Absolute Maximum Ratings T C =25 unless otherwise specified Symbol Parameter Value Units S Drain-Source Voltage 1 V Drain Current Continuous (T C = 25 ) 7 * A Drain Current Continuous (T C = 1 ) 49 * A M Drain Current Pulsed (Note 1) 245 * A Gate-Source Voltage 2 V E AS Single Pulsed Avalanche Energy (Note 2) 19 mj E AR Repetitive Avalanche Energy (Note 1) 11 mj P D Power Dissipation (T C = 25 ) 11 W Power Dissipation (T A = 25 )* 3 W - Derate above W/ T J, T STG Operating and Storage Temperature Range -55 to +175 T L Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds 3 * Drain current limited by maximum junction temperature Thermal Resistance Characteristics Symbol Parameter Typ. Max. Units R JC Junction-to-Case R JA Junction-to-Ambient* -- 5 /W R JA Junction-to-Ambient * When mounted on the minimum pad size recommended (PCB Mount)

2 Electrical Characteristics T J =25 C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics Gate Threshold Voltage =, = V Static Drain-Source = 1 V, = 2 A m On-Resistance = 4.5 V, = 15 A m g FS Forward Transconductance = 5, = 2 A S R DS(ON) Off Characteristics BS Drain-Source Breakdown Voltage = V, = V = 8 V, = V SS Zero Gate Voltage Drain Current = 8 V, T J = I GSS Gate-Body Leakage Current = 2 V, = V Dynamic Characteristics C iss Input Capacitance C oss Output Capacitance = 25 V, = V, f = 1. MHz C rss Reverse Transfer Capacitance R g Gate Resistance = V, = V, f = 1MHz Switching Characteristics t d(on) Turn-On Time t r t d(off) Turn-On Rise Time Turn-Off Delay Time = 5 V, = 3 A, R G = t f Turn-Off Fall Time Q g Total Gate Charge nc Q gs Gate-Source Charge = 8 V, = 3 A, = 1 V nc Q gd Gate-Drain Charge nc Source-Drain Diode Maximum Ratings and Characteristics I S Continuous Source-Drain Diode Forward Current I SM Pulsed Source-Drain Diode Forward Current A V SD Source-Drain Diode Forward Voltage I S = 3 A, = V V trr Reverse Recovery Time I S = 3 A, = V Qrr Reverse Recovery Charge di F /dt = 1 A/ nc Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=1mH, I AS =17A, =25V, R G =25, Starting T J =25 C

3 Typical Characteristics Top : 1 V 8 V 7 V 6 V 5 V 4 V 3.5 V 3. V Bottom : 2.5 V 1. 3us Pulse Test 2. T C = 25 o C , Drain-Source Voltage [V] Figure 1. On Region Characteristics T J =25 o C 5 1. = 5V 2. 3us Pulse Test , Gate-Source Voltage [V] Figure 2. Transfer Characteristics 26 R DS(ON) [m ], Drain-Source On-Resistance = 4.5V = 1V 12 Note : T J = 25 o C Figure 3. On Resistance Variation vs Drain Current and Gate Voltage R, Reverse Drain Current [A] o C 25 o C 1. = V 2. 3us Pulse Test V SD, Source-Drain Voltage [V] Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Capacitances [pf] C iss C oss C rss , Drain-Source Voltage [V] C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd * Note ; 1. = V 2. f = 1 MHz Figure 5. Capacitance Characteristics, Gate-Source Voltage [V] = 8V = 3V Q G, Total Gate Charge [nc] Figure 6. Gate Charge Characteristics

4 Typical Characteristics (continued) BS, (Normalized) Drain-Source Breakdown Voltage T J, Junction Temperature [ o C] Note : 1. = V 2. = 25 A Figure 7. Breakdown Voltage Variation vs Temperature R DS(ON), (Normalized) Drain-Source On-Resistance Figure 8. On-Resistance Variation vs Temperature Note : 1. = 1 V 2. = 3 A T J, Junction Temperature [ o C] 1 3 Operation in This Area is Limited by R DS(on) 1 us T C = 25 o C 2. T J = 175 o C 3. Single Pulse 1 us 1 ms 1 ms , Drain-Source Voltage [V] Figure 9. Maximum Safe Operating Area DC T C, Case Temperature [ o C] Figure 1. Maximum Drain Current vs Case Temperature Z JC (t), Thermal Response D= single pulse 1. Z JC (t) = 1.4 o C/W Max. 2. Duty Factor, D=t 1 /t 2 3. T JM - T C = P DM * Z JC (t) P DM t 1 t t 1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve

5 12V 2nF 3mA 3nF Fig 12. Gate Charge Test Circuit & Waveform Same Type as DUT DUT 1V Q gs Q g Q gd Charge Fig 13. Resistive Switching Test Circuit & Waveforms R L 9% R G (.5 rated ) 1V DUT V in 1% t d(on) t r t d(off) tf t on t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms L E AS = L L I 2 2 AS BS BS -- BS I AS R G (t) 1V DUT (t) t p Time

6 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms R G DUT I S Driver + _ Same Type as DUT L dv/dt controlled by RG I S controlled by pulse period ( Driver ) Gate Pulse Width D = Gate Pulse Period 1V I S ( DUT ) I FM, Body Diode Forward Current di/dt I RM ( DUT ) Body Diode Reverse Current Body Diode Recovery dv/dt V f Body Diode Forward Voltage Drop

7 Package Dimension

8 Package Dimension 7..1 / 9.5.2

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