N & P-Channel 100-V (D-S) MOSFET

Transcription

1 N & P-Channel -V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: LED Inverter Circuits DC/DC Conversion Circuits Motor drives VDS (V) - PRODUCT SUMMARY r DS(on) V GS = V GS V GS = -V V GS = -.V SC7-6 ID (A) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a ABSOLUTE MAXIMUM RATINGS (T A = C UNLESS OTHERWISE NOTED) Parameter Operating Junction and Storage Temperature Range Symbol Nch Limit Pch Limit Units V DS - V GS ± ± V T A = C. -. I D T A =7 C -.6 A I DM - I S 7 - A T A = C P D T A =7 C.. W T J, T stg - to C Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= sec Steady State Symbol Maximum Units R θja 6 C/W Notes a. Surface Mounted on x FR Board. b. Pulse width limited by maximum junction temperature Preliminary Publication Order Number: DS A

2 Electrical Characteristics Parameter Symbol Test Conditions Min Typ Max Unit Static Gate-Source Threshold Voltage V GS(th) V DS = V GS, I D = ua (N-ch) V V DS = V GS, I D = - ua (P-ch) - V Gate-Body Leakage I GSS V DS = V, V GS = ± V ± ua Zero Gate Voltage Drain Current I DSS V DS = 8 V, V GS = V (N-ch) V DS = -8 V, V GS = V (P-ch) - ua On-State Drain Current a Drain-Source On-Resistance a I D(on) r DS(on) V DS = V, V GS = V V GS = V, I D = A (N-ch). V GS =. V, I D =. A (N-ch). (N-ch) Ω.7 A V DS = - V, V GS = - V V GS = - V, I D = -. A (P-ch). V GS = -. V, I D = -. A (P-ch) 6 (P-ch) Ω - A Forward Transconductance a g fs V DS = V, I D = A (N-ch) S V DS = - V, I D = -. A (P-ch) S Diode Forward Voltage a V SD I S =.8 A, V GS = V (N-ch).7 V I S = -.7 A, V GS = V (P-ch) -.8 V Dynamic b Total Gate Charge Q g. N - Channel Gate-Source Charge Q gs. V DS = V, V GS =. V, I D = A Gate-Drain Charge Q gd.8 nc Turn-On Delay Time t d(on) N - Channel 3 Rise Time t r V DS = V, R L = 66.7 Ω, Turn-Off Delay Time t d(off) I D = A, 3 ns Fall Time t f V GEN = V, R GEN = 6 Ω Input Capacitance C iss 6 N - Channel Output Capacitance C oss 9 V DS = V, V GS = V, f = Mhz Reverse Transfer Capacitance C rss 9 pf Total Gate Charge Q g P - Channel. Gate-Source Charge Q gs V DS = - V, V GS = -. V, I D = -.. nc Gate-Drain Charge Q gd A. Turn-On Delay Time t d(on) P - Channel Rise Time t r V DS = - V, R L = 333. Ω, Turn-Off Delay Time t d(off) I D = -. A, ns Fall Time t f V GEN = - V, R GEN = 6 Ω Input Capacitance C iss 8 P - Channel Output Capacitance C oss 8 V DS = - V, V GS = V, f = Mhz Reverse Transfer Capacitance C rss 9 pf Preliminary Publication Order Number: DS A

3 Capacitance (pf) IS - Source Current (A) Typical Electrical Characteristics - N-channel 3. TJ = C. 3.V V,.V,6V,8V,V ID-Drain Current (A). On-Resistance vs. Drain Current. Transfer Characteristics. TJ = C ID = A TJ = C VSD - Source-to-Drain Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage. Drain-to-Source Forward Voltage. V,8V,6V,.V,V F = MHz 3.V. Ciss. Coss Crss VDS - Drain-to-Source Voltage (V) VDS-Drain-to-Source Voltage (V). Output Characteristics 6. Capacitance Preliminary 3 Publication Order Number: DS A

4 ID Current (A) PEAK TRANSIENT POWER (W) VGS-Gate-to-Source Voltage (V) (Normalized) Typical Electrical Characteristics - N-channel 8 VDS = V ID = A Qg - Total Gate Charge (nc) 7. Gate Charge TJ -JunctionTemperature( C) 8. Normalized On-Resistance Vs Junction Temperature us us ms ms ms SEC. SEC SEC DC Idm limit.. Limited by RDS... VDS Drain to Source Voltage (V) t TIME (SEC) 9. Safe Operating Area. Single Pulse Maximum Power Dissipation D = t TIME (sec). Normalized Thermal Transient Junction to Ambient P(pk) R θja (t) = r(t) + R θja R θja = 6 C /W Single Pulse. t t T J - T A = P * R θja (t) Duty Cycle, D = t / t..... Preliminary Publication Order Number: DS A

5 Capacitance (pf) IS - Source Current (A) Typical Electrical Characteristics - P-channel. TJ = C V V,.V,6V,8V,V ID-Drain Current (A). On-Resistance vs. Drain Current. Transfer Characteristics TJ = C ID = -.A TJ = C VSD - Source-to-Drain Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage. Drain-to-Source Forward Voltage.. V,8V,6V,.V,V Ciss F = MHz 3.V Coss Crss 3 VDS - Drain-to-Source Voltage (V) VDS-Drain-to-Source Voltage (V). Output Characteristics 6. Capacitance Preliminary Publication Order Number: DS A

6 ID Current (A) PEAK TRANSIENT POWER (W) VGS-Gate-to-Source Voltage (V) (Normalized) Typical Electrical Characteristics - P-channel 8 6 VDS = -V ID = Qg - Total Gate Charge (nc) 7. Gate Charge TJ -JunctionTemperature( C) 8. Normalized On-Resistance Vs Junction Temperature us us ms ms ms SEC. SEC SEC DC Idm limit.. Limited by RDS... VDS Drain to Source Voltage (V) t TIME (SEC) 9. Safe Operating Area. Single Pulse Maximum Power Dissipation D = Single Pulse..... t TIME (sec). Normalized Thermal Transient Junction to Ambient P(pk) R θja (t) = r(t) + R θja R θja = 6 C /W t t T J - T A = P * R θja (t) Duty Cycle, D = t / t Preliminary 6 Publication Order Number: DS A

7 Package Information Preliminary 7 Publication Order Number: DS A