T C =25 unless otherwise specified

Transcription

1 800V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 17 nc (Typ.) Extended Safe Operating Area Lower R DS(ON) : 4.0 Ω =10V 100% Avalanche Tested BS = 800 V R DS(on) typ = 4.0 Ω = 2.5 A Dec 2005 D-PAK I-PAK 1 3 HFD3N HFU3N80 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Thermal Resistance Characteristics T C =25 unless otherwise specified Symbol Parameter Value Units S Drain-Source Voltage 800 V Drain Current Continuous (T C = 25 ) 2.5 A Drain Current Continuous (T C = 100 ) 1.57 A M Drain Current Pulsed (Note 1) 10 A Gate-Source Voltage ±30 V E AS Single Pulsed Avalanche Energy (Note 2) 320 mj I AR Avalanche Current (Note 1) 2.5 A E AR Repetitive Avalanche Energy (Note 1) 7.0 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P D Power Dissipation (T A = 25 ) * 2.5 W Power Dissipation (T C = 25 ) - Derate above 25 Symbol Parameter Typ. Max. Units R θjc Junction-to-Case R θja Junction-to-Ambient* R θja Junction-to-Ambient * When mounted on the minimum pad size recommended (PCB Mount) 70 W 0.56 W/ T J, T STG Operating and Storage Temperature Range -55 to +150 T L Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds 300 /W

2 Electrical Characteristics T C =25 C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics Gate Threshold Voltage =, = 250 μa V R DS(ON) Static Drain-Source On-Resistance Off Characteristics = 10 V, = 1.25 A Ω BS Drain-Source Breakdown Voltage = 0 V, = 250 μa V ΔBS /ΔT J SS I GSSF I GSSR Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse = 250 μa, Referenced to V/ = 800 V, = 0 V μa = 640 V, T C = μa = 30 V, = 0 V na = -30 V, = 0 V na Dynamic Characteristics C iss Input Capacitance pf = 25 V, = 0 V, C oss Output Capacitance pf f = MHz C rss Reverse Transfer Capacitance pf Switching Characteristics t d(on) Turn-On Time = 400 V, = 3.0 A, ns t r Turn-On Rise Time R G = 25 Ω ns t d(off) Turn-Off Delay Time ns t f Turn-Off Fall Time (Note 4,5) ns Q g Total Gate Charge = 640V, = 3.0 A, nc Q gs Gate-Source Charge = 10 V nc Q gd Gate-Drain Charge (Note 4,5) nc Source-Drain Diode Maximum Ratings and Characteristics I S Continuous Source-Drain Diode Forward Current I SM Pulsed Source-Drain Diode Forward Current A V SD Source-Drain Diode Forward Voltage I S = 2.5 A, = 0 V V trr Reverse Recovery Time I S = 3.0 A, = 0 V ns Qrr Reverse Recovery Charge di F /dt = 100 A/μs (Note 4) μc Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=67mH, I AS =3.0A, =50V, R G =25Ω, Starting T J =25 C 3. I SD 2.5A, di/dt 200A/μs, BS, Starting T J =25 C 4. Pulse Test : Pulse Width 300μs, Duty Cycle 2% 5. Essentially Independent of Operating Temperature

3 Typical Characteristics, Drain Current [A], Drain Current [A], Drain-Source Voltage [V], Gate-Source Voltage [V] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics R DS(on), [Ω] Drain-Source On-Resistance R, Reverse Drain Current [A] = 0V μ s Pulse Test, Drain Current [A] Figure 3. On Resistance Variation vs Drain Current and Gate Voltage V SD, Source-Drain voltage [V] Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Capacitance [pf] C iss C oss C rss , Drain-Source Voltage [V] C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd = 0 V 2. f = 1 MHz Figure 5. Capacitance Characteristics, Gate-Source Voltage [V] = 160V = 400V = 640V Note : = 3.0A Q G, Total Gate Charge [nc] Figure 6. Gate Charge Characteristics

4 Typical Characteristics (continued) BS, (Normalized) Drain-Source Breakdown Voltage = 0 V 2. = 250 μ A R DS(ON), (Normalized) Drain-Source On-Resistance = 10 V 2. = 1.5 A T J, Junction Temperature [ o C] T J, Junction Temperature [ o C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 10 1 Operation in This Area is Limited by R DS(on) , Drain Current [A] * Notes : 1. T C = 25 o C 2. T J = 150 o C 3. Single Pulse , Drain-Source Voltage [V] Figure 9. Maximum Safe Operating Area DC 10 ms 100 ms 1 ms 100 µs, Drain Current [A] T C, Case Temperature [ ] Figure 10. Maximum Drain Current vs Case Temperature D=0.5 Z θ JC (t), Thermal Response single pulse 1. Z θ JC (t) = 1.78 /WMa x. 2. Duty Factor, D=t 1 /t 2 3. T JM - T C = P DM * Z θ JC (t) P DM t 1 t t 1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve

5 Typical Characteristics (continued) BS, (Normalized) Drain-Source Breakdown Voltage = 0 V 2. = 250 μ A R DS(ON), (Normalized) Drain-Source On-Resistance = 10 V 2. = 1.5 A T J, Junction Temperature [ o C] T J, Junction Temperature [ o C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature, Drain Current [A] Operation in This Area is Limited by R DS(on) 1. T C = 25 o C 2. T J = 150 o C 3. Single Pulse , Drain-Source Voltage [V] DC 10 ms 1 ms 100 µs, Drain Current [A] T C, Case Temperature [ ] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature D=0.5 Z θ JC (t), Thermal Response single pulse 1. Z θ JC (t) = 1.78 /WMa x. 2. Duty Factor, D=t 1 /t 2 3. T JM - T C = P DM * Z θ JC (t) P DM t 1 t t 1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve

6 12V 200nF 50KΩ 300nF Fig 12. Gate Charge Test Circuit & Waveform Same Type as DUT 10V Q gs Q g Q gd DUT 3mA Charge Fig 13. Resistive Switching Test Circuit & Waveforms R L 90% R G ( 0.5 rated ) 10V DUT V in 10% t d(on) t r t d(off) tf t on t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms L 1 E AS = ---- L L I 2 2 AS BS BS -- BS I AS R G (t) 10V DUT (t) t p Time

7 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + _ I S L Driver R G Same Type as DUT dv/dt controlled by RG I S controlled by pulse period ( Driver ) Gate Pulse Width D = Gate Pulse Period 10V I S ( DUT ) I FM, Body Diode Forward Current di/dt I RM ( DUT ) Body Diode Reverse Current Body Diode Recovery dv/dt V f Body Diode Forward Voltage Drop

8 Package Dimension TO ± ± ± ±0.05 1± ± ± ± ± ± ± typ 2.3typ

9 Package Dimension TO ± ± ± ± ±0.2 7± ± ± ± ± typ 2.3typ 1.2±0.3