Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 650 V V GS Gate-Source Voltage ±30 V
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1 General Description These N-Channel enhancement mode power field effect transistors are using Super Junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply TO220F Pin Configuration D BVDSS RDSON ID 650V 0.38Ω 11A Features 11A,650V, RDS(ON) =0.32Ω@VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available Applications High efficient switched mode power supplies LED Lighting Adapter/charger G S D G S Absolute Maximum Ratings (Tc=25 unless otherwise noted) Symbol Parameter Rating Units V DS Drain-Source Voltage 650 V V GS Gate-Source Voltage ±30 V I D Drain Current Continuous (T C =25 ) 11 A Drain Current Continuous (T C =100 ) 7 A I DM Drain Current Pulsed 1 44 A EAS Single Pulse Avalanche Energy mj IAS Single Pulse Avalanche Current A P D Power Dissipation (T C =25 ) 31 W Power Dissipation Derate above W/ T STG Storage Temperature Range -55 to 150 T J Operating Junction Temperature Range -55 to 150 Thermal Characteristics Symbol Parameter Typ. Max. Unit R θja Thermal Resistance Junction to ambient /W R θjc Thermal Resistance Junction to Case /W 1
2 Electrical Characteristics (T J =25, unless otherwise noted) Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BV DSS Drain-Source Breakdown Voltage V GS =0V, I D =250uA V BV DSS / T J BV DSS Temperature Coefficient Reference to 25, I D =1mA V/ I DSS V DS =650V, V GS =0V, T J = ua Drain-Source Leakage Current V DS =520V, V GS =0V, T J = ua I GSS Gate-Source Leakage Current V GS =±30V, V DS =0V ±100 na On Characteristics R DS(ON) Static Drain-Source On-Resistance V GS =10V, I D =2.5A Ω V GS(th) Gate Threshold Voltage V GS =V DS, I D =320uA V V GS(th) V GS(th) Temperature Coefficient mv/ Dynamic and switching Characteristics Q g Total Gate Charge 2, Q gs Gate-Source Charge 2, 3 V DS=200V, V GS=10V, I D =6A Q gd Gate-Drain Charge 2, T d(on) Turn-On Delay Time 2, T r Rise Time 2, 3 V DD=400V, V GS=10V, R G =3.4Ω T d(off) Turn-Off Delay Time 2, 3 I D =-1A T f Fall Time 2, C iss Input Capacitance C oss Output Capacitance V DS =20V, V GS =0V, F=1MHz C rss Reverse Transfer Capacitance nc ns pf Drain-Source Diode Characteristics and Maximum Ratings Symbol Parameter Conditions Min. Typ. Max. Unit I S Continuous Source Current V G =V D =0V, Force Current A I SM Pulsed Source Current A V SD Diode Forward Voltage V GS =0V, I S =1A, T J = V t rr Reverse Recovery Time 2 VGS=0V,IS=1A, di/dt=100a/µs, ns Q rr Reverse Recovery Charge 2 T J = uc Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. V DD =50V,V GS =10V,L=133mH,I AS =1.94A.,RG=25Ω,Starting TJ= The data tested by pulsed, pulse width 300us, duty cycle 2%. 4. Essentially independent of operating temperature. 2
3 Fig.1 Output Characteristics T C, Case Temperature ( ) Fig.2 Continuous Drain Current vs. T C Normalized On Resistance (Ω) Normalized Gate Threshold Voltage (V) T J, Junction Temperature ( ) Fig.3 Normalized RDSON vs. T J T J, Junction Temperature ( ) Fig.4 Normalized V th vs. T J VGS, Gate to Source Voltage (V) C, Capacitance (pf) Qg, Gate Charge (nc) Fig.5 Gate Charge Waveform Fig.6 Capacitance Characteristics 3
4 Normalized Thermal Response (RθJC) Square Wave Pulse Duration (s) Fig.7 Normalized Transient Impedance Fig.8 Maximum Safe Operation Area V DS 90% EAS= 1 2 L x I AS 2 x BV DSS BV DSS -V DD BV DSS V DD 10% I AS V GS T d(on) T r T d(off) T f T on T off V GS Fig.9 Switching Time Waveform Fig.10 EAS Waveform 4
5 TO220F PACKAGE INFORMATION Dimensions In Millimeters Dimensions In Inches Symbol Min Max Min Max A A A B B B C C C D BSC BSC D D K E E E DIA
Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 60 V V GS Gate-Source Voltage ±20 V
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