Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 650 V V GS Gate-Source Voltage ±30 V

Size: px
Start display at page:

Download "Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 650 V V GS Gate-Source Voltage ±30 V"

Transcription

1 General Description These N-Channel enhancement mode power field effect transistors are using Super Junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply TO220F Pin Configuration D BVDSS RDSON ID 650V 0.38Ω 11A Features 11A,650V, RDS(ON) =0.32Ω@VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available Applications High efficient switched mode power supplies LED Lighting Adapter/charger G S D G S Absolute Maximum Ratings (Tc=25 unless otherwise noted) Symbol Parameter Rating Units V DS Drain-Source Voltage 650 V V GS Gate-Source Voltage ±30 V I D Drain Current Continuous (T C =25 ) 11 A Drain Current Continuous (T C =100 ) 7 A I DM Drain Current Pulsed 1 44 A EAS Single Pulse Avalanche Energy mj IAS Single Pulse Avalanche Current A P D Power Dissipation (T C =25 ) 31 W Power Dissipation Derate above W/ T STG Storage Temperature Range -55 to 150 T J Operating Junction Temperature Range -55 to 150 Thermal Characteristics Symbol Parameter Typ. Max. Unit R θja Thermal Resistance Junction to ambient /W R θjc Thermal Resistance Junction to Case /W 1

2 Electrical Characteristics (T J =25, unless otherwise noted) Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BV DSS Drain-Source Breakdown Voltage V GS =0V, I D =250uA V BV DSS / T J BV DSS Temperature Coefficient Reference to 25, I D =1mA V/ I DSS V DS =650V, V GS =0V, T J = ua Drain-Source Leakage Current V DS =520V, V GS =0V, T J = ua I GSS Gate-Source Leakage Current V GS =±30V, V DS =0V ±100 na On Characteristics R DS(ON) Static Drain-Source On-Resistance V GS =10V, I D =2.5A Ω V GS(th) Gate Threshold Voltage V GS =V DS, I D =320uA V V GS(th) V GS(th) Temperature Coefficient mv/ Dynamic and switching Characteristics Q g Total Gate Charge 2, Q gs Gate-Source Charge 2, 3 V DS=200V, V GS=10V, I D =6A Q gd Gate-Drain Charge 2, T d(on) Turn-On Delay Time 2, T r Rise Time 2, 3 V DD=400V, V GS=10V, R G =3.4Ω T d(off) Turn-Off Delay Time 2, 3 I D =-1A T f Fall Time 2, C iss Input Capacitance C oss Output Capacitance V DS =20V, V GS =0V, F=1MHz C rss Reverse Transfer Capacitance nc ns pf Drain-Source Diode Characteristics and Maximum Ratings Symbol Parameter Conditions Min. Typ. Max. Unit I S Continuous Source Current V G =V D =0V, Force Current A I SM Pulsed Source Current A V SD Diode Forward Voltage V GS =0V, I S =1A, T J = V t rr Reverse Recovery Time 2 VGS=0V,IS=1A, di/dt=100a/µs, ns Q rr Reverse Recovery Charge 2 T J = uc Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. V DD =50V,V GS =10V,L=133mH,I AS =1.94A.,RG=25Ω,Starting TJ= The data tested by pulsed, pulse width 300us, duty cycle 2%. 4. Essentially independent of operating temperature. 2

3 Fig.1 Output Characteristics T C, Case Temperature ( ) Fig.2 Continuous Drain Current vs. T C Normalized On Resistance (Ω) Normalized Gate Threshold Voltage (V) T J, Junction Temperature ( ) Fig.3 Normalized RDSON vs. T J T J, Junction Temperature ( ) Fig.4 Normalized V th vs. T J VGS, Gate to Source Voltage (V) C, Capacitance (pf) Qg, Gate Charge (nc) Fig.5 Gate Charge Waveform Fig.6 Capacitance Characteristics 3

4 Normalized Thermal Response (RθJC) Square Wave Pulse Duration (s) Fig.7 Normalized Transient Impedance Fig.8 Maximum Safe Operation Area V DS 90% EAS= 1 2 L x I AS 2 x BV DSS BV DSS -V DD BV DSS V DD 10% I AS V GS T d(on) T r T d(off) T f T on T off V GS Fig.9 Switching Time Waveform Fig.10 EAS Waveform 4

5 TO220F PACKAGE INFORMATION Dimensions In Millimeters Dimensions In Inches Symbol Min Max Min Max A A A B B B C C C D BSC BSC D D K E E E DIA

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 60 V V GS Gate-Source Voltage ±20 V

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 60 V V GS Gate-Source Voltage ±20 V General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 20 V V GS Gate-Source Voltage ±10 V

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 20 V V GS Gate-Source Voltage ±10 V General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage V V GS Gate-Source Voltage ±8 ±8 V

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage V V GS Gate-Source Voltage ±8 ±8 V General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

Product Summery. Applications

Product Summery. Applications General Description The QM3056M6 is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter

More information

Features. Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction to ambient /W RθJC Thermal Resistance Junction to Case

Features. Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction to ambient /W RθJC Thermal Resistance Junction to Case General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

SSF11NS65UF 650V N-Channel MOSFET

SSF11NS65UF 650V N-Channel MOSFET Main Product Characteristics V DSS R DS(on) I D 650V 0.32Ω (typ.) 11A TO-220F Marking and Pin S c h e m a ti c Dia g r a m Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche

More information

PDN001N60S. 600V N-Channel MOSFETs BVDSS RDSON ID 600V A S G. General Description. Features. SOT23-3S Pin Configuration.

PDN001N60S. 600V N-Channel MOSFETs BVDSS RDSON ID 600V A S G. General Description. Features. SOT23-3S Pin Configuration. General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

Symbol Parameter Value Units V DSS Drain to Source Voltage 400 V. Total Power Dissipation ) 40 W Derating Factor above 25 0.

Symbol Parameter Value Units V DSS Drain to Source Voltage 400 V. Total Power Dissipation ) 40 W Derating Factor above 25 0. 400V N-Channel MOSFET Features RDS(ON) (Max 1.00Ω) @ VGS=10V Gate Charge : 18.0 nc (Typical) Improved dv/dt capability / Fast switching 100% EAS Tested BVDSS RDS(ON) MAX ID 400V 1.00Ω 6A TO-220F PKG General

More information

TO-220F PKG. Total Power Dissipation ) W Derating Factor above W/

TO-220F PKG. Total Power Dissipation ) W Derating Factor above W/ 400V N-Channel MOSFET Features RDS(ON) (Max 0.55Ω) @ VGS=10V Gate Charge : 46.0 nc (Typical) Improved dv/dt capability 100% EAS Tested TO-220F PKG BVDSS RDS(ON) MAX ID 400V 0.55Ω 10A TO-220 PKG SFF SFP

More information

SSG4504 N & P-Ch Enhancement Mode Power MOSFET N-Ch: 7.2 A, 40 V, R DS(ON) 30 mω P-Ch: -6.5A, -40 V, R DS(ON) 40 mω

SSG4504 N & P-Ch Enhancement Mode Power MOSFET N-Ch: 7.2 A, 40 V, R DS(ON) 30 mω P-Ch: -6.5A, -40 V, R DS(ON) 40 mω RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density, which provide excellent R DSON

More information

DFN3X3-8 Pin Configuration. Units Symbol. Parameter

DFN3X3-8 Pin Configuration. Units Symbol. Parameter General Description Product Summery Description The WSD20L75DN uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

Operating Junction and 55 to +175 C Storage Temperature Range

Operating Junction and 55 to +175 C Storage Temperature Range Feathers: dvanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current ID =60 BV=60V Rdson=14mΩ(max.) Description: The is a new generation of middle voltage

More information

Parameter Symbol Limit Unit

Parameter Symbol Limit Unit N-Channel Enhancement Mode Power MOSFET Description The PE3050K uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

SLD8N6 65S / SLU8N65 5S

SLD8N6 65S / SLU8N65 5S SLD8N65S / SLU8N65S 650V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored

More information

SMN630LD Logic Level N-Ch Power MOSFET

SMN630LD Logic Level N-Ch Power MOSFET Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features Drain-Source breakdown voltage: BV DSS =200V (Min.) Low gate charge: Q g =12nC (Typ.) Low drain-source On-Resistance: R DS(on) =0.34Ω

More information

P-Channel Enhancement Mode Power MOSFET

P-Channel Enhancement Mode Power MOSFET DESCRIPTION The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM

More information

Taiwan Goodark Technology Co.,Ltd

Taiwan Goodark Technology Co.,Ltd TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in PWM, load switching

More information

SMN01L20Q Logic Level N-Ch Power MOSFET

SMN01L20Q Logic Level N-Ch Power MOSFET Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features 0.85A, 200V, R DS(on) =1.35Ω @ V GS =10V Low gate charge: Q g =4nC (Typ.) Fast switching 100% avalanche tested RoHS compliant device D

More information

Device Marking Device Device Package Reel Size Tape width Quantity TO-252-2L. Parameter Symbol Limit Unit

Device Marking Device Device Package Reel Size Tape width Quantity TO-252-2L. Parameter Symbol Limit Unit HM80N05K N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

Device Marking Device Device Package Reel Size Tape width Quantity SIP3210 SIP3210 SOP-8 330mm

Device Marking Device Device Package Reel Size Tape width Quantity SIP3210 SIP3210 SOP-8 330mm SIAI N-Channel Enhancement Mode Power MOSFET DESCRIPTION The SIP3210 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

Product Summary. BV DSS typ. 84 V R DS(ON) max. 8.0 mω I D 80 A

Product Summary. BV DSS typ. 84 V R DS(ON) max. 8.0 mω I D 80 A SIAI N-Channel Enhancement Mode Power MOSFET General Description The S75NF75 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 15A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC is an N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS technology.

More information

TO-220F. 1. Gate 2. Drain 3. Source. Item Sales Type Marking Package Packaging 1 SW P 4N60 SW4N60 TO-220 TUBE 2 SW F 4N60 SW4N60 TO-220F TUBE

TO-220F. 1. Gate 2. Drain 3. Source. Item Sales Type Marking Package Packaging 1 SW P 4N60 SW4N60 TO-220 TUBE 2 SW F 4N60 SW4N60 TO-220F TUBE N-channel MOSFET Features High ruggedness R DS(ON) (Max 2.2 Ω)@V GS =0V Gate Charge (Typ 30nC) Improved dv/dt Capability 00% Avalanche Tested 2 3 TO-220F 2 3 TO-220 BS : 600V I D : 4.0A R DS(ON) : 2.2ohm

More information

SMK0990FD Advanced N-Ch Power MOSFET

SMK0990FD Advanced N-Ch Power MOSFET z SMK0990FD Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source breakdown voltage: BV DSS =900V Low gate charge: Q g =52nC (Typ.) Low drain-source On resistance: R DS(on) =1.4Ω

More information

SMK0460IS Advanced N-Ch Power MOSFET

SMK0460IS Advanced N-Ch Power MOSFET Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source breakdown voltage: BV DSS =600V (Min.) Low gate charge: Q g =12nC (Typ.) Low drain-source On resistance: R DS(on) =2.1Ω

More information

I2-PAK G D S. T C = 25 C unless otherwise noted. Drain-Source Voltage 650 V. Symbol Parameter SLB10N65S SLI10N65S Units R θjc

I2-PAK G D S. T C = 25 C unless otherwise noted. Drain-Source Voltage 650 V. Symbol Parameter SLB10N65S SLI10N65S Units R θjc SLB10N65S/ SLI10N65S 650V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored

More information

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V (BR)DSS R DS(ON) I D 75 8mΩ 8A G D S. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (T C = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage

More information

FIR4N60FG. Features 4A,600V,R DS(on) GS =10V Low gate charge Low Crss Fast switching Improved dv/dt capability

FIR4N60FG. Features 4A,600V,R DS(on) GS =10V Low gate charge Low Crss Fast switching Improved dv/dt capability Advanced N-Ch Power MOSFET FIR4N60FG General Description FIR4N60FG is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-Cell TM structure VDMOS

More information

SUPER-SEMI SUPER-MOSFET. Super Junction Metal Oxide Semiconductor Field Effect Transistor. 800V Super Junction Power Transistor SS*80R240S

SUPER-SEMI SUPER-MOSFET. Super Junction Metal Oxide Semiconductor Field Effect Transistor. 800V Super Junction Power Transistor SS*80R240S SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 800V Super Junction Power Transistor SS*80R240S Rev. 1.1 Aug. 2017 SSP80R240S/SSF80R240S/SSB80R240S 800V N-Channel

More information

N-channel Enhancement mode TO-262/TO-263/TO-220F MOSFET TO-262 TO Gate 2. Drain 3. Source

N-channel Enhancement mode TO-262/TO-263/TO-220F MOSFET TO-262 TO Gate 2. Drain 3. Source N-channel Enhancement mode TO-262/TO-263/TO-220F MOSFET Features High ruggedness Low R DS(ON) (Typ 0.23Ω)@V GS =10V Low Gate Charge (Typ 42nC) Improved dv/dt Capability 100% Avalanche Tested Application:

More information

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 30 V V GS Gate-Source Voltage ±20 V

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 30 V V GS Gate-Source Voltage ±20 V General escription These N-Channel enhancement mode power field effect transistors are using trench MO technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

TO-220. Item Sales Type Marking Package Packaging 1 SW P 640 SW640 TO-220 TUBE 2 SW W 640 SW640 TO-3P TUBE

TO-220. Item Sales Type Marking Package Packaging 1 SW P 640 SW640 TO-220 TUBE 2 SW W 640 SW640 TO-3P TUBE N-channel MOSFET Features High ruggedness R DS(ON) (Max 0.8 Ω)@V GS =0V Gate Charge (Typical 35nC) Improved dv/dt Capability 00% Avalanche Tested 2 3 2 3. Gate 2. Drain 3. Source General Description This

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 12A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC s advanced technology to provide customers with planar

More information

SVF4N65T/F(G)/M_Datasheet

SVF4N65T/F(G)/M_Datasheet 4A, 650V N-CHANNEL MOSFET SVF4N65T/F(G)/M_Datasheet GENERAL DESCRIPTION SVF4N65T/F(G)/M is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-Cell

More information

TSP13N 50M / TSF13N N50M

TSP13N 50M / TSF13N N50M TSP13N50M / TSF13N50M 600V N-Channel MOSFET General Description This Power MOSFET is produced using True semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored

More information

TO-220 G. T C = 25 C unless otherwise noted. Drain-Source Voltage 80 V. Symbol Parameter MSP120N08G Units R θjc

TO-220 G. T C = 25 C unless otherwise noted. Drain-Source Voltage 80 V. Symbol Parameter MSP120N08G Units R θjc MSP120N08G 80V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s advanced technology. which provides high performance in on-state resistance, fast switching

More information

SVF12N65T/F_Datasheet

SVF12N65T/F_Datasheet 12A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF12N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-Cell TM structure VDMOS technology.

More information

FNK N-Channel Enhancement Mode Power MOSFET

FNK N-Channel Enhancement Mode Power MOSFET FNK N-Channel Enhancement Mode Power MOSFET Description The FNK 80H11 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of

More information

I2-PAK G D S. T C = 25 C unless otherwise noted. Drain-Source Voltage 260 V. Symbol Parameter SLB40N26C/SLI40N26C Units R θjc

I2-PAK G D S. T C = 25 C unless otherwise noted. Drain-Source Voltage 260 V. Symbol Parameter SLB40N26C/SLI40N26C Units R θjc SLB40N26C / SLI40N26C 260V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored

More information

TO-220 TO-220F. 1. Gate 2. Drain 3. Source. Item Sales Type Marking Package Packaging 1 SW P 7N65 SW7N65 TO-220 TUBE 2 SW F 7N65 SW7N65 TO-220F TUBE

TO-220 TO-220F. 1. Gate 2. Drain 3. Source. Item Sales Type Marking Package Packaging 1 SW P 7N65 SW7N65 TO-220 TUBE 2 SW F 7N65 SW7N65 TO-220F TUBE N-channel Enhanced mode TO-220F/TO-220 MOSFET Features High ruggedness Low R DS(ON) (Typ 1.2Ω)@V GS =10V Low Gate Charge (Typ32 nc) Improved dv/dt Capability 100% Avalanche Tested Application: Charge,LED,PC

More information

SMK1360FD Advanced N-Ch Power MOSFET

SMK1360FD Advanced N-Ch Power MOSFET Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features BV DDS =600V (Min.) Low gate charge: Q g =41nC (Typ.) Low drain-source On resistance: R DS(on) =0.65Ω (Max.) 100% avalanche tested RoHS

More information

SSF6014D 60V N-Channel MOSFET

SSF6014D 60V N-Channel MOSFET Main Product Characteristics V DSS 60V R DS(on) 12mΩ(typ.) I D 60A Features and Benefits TO-252 (DPAK) Marki ng and P i n Assignment S c h e m a ti c Dia g r a m Advanced trench MOSFET process technology

More information

Symbol Parameter Rating Unit Common Ratings (T C=25 C Unless Otherwise Noted) V DSS

Symbol Parameter Rating Unit Common Ratings (T C=25 C Unless Otherwise Noted) V DSS Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (T C=25 C Unless Otherwise Noted) V DSS Drain-Source Voltage 3 V GSS Gate-Source Voltage ±2 T J Maximum Junction Temperature 75 C T

More information

UNISONIC TECHNOLOGIES CO., LTD UF7476 Preliminary POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD UF7476 Preliminary POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD UF7476 Preliminary POWER MOSFET N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF7476 is a N-channel Power MOSFET, it uses UTC s advanced technology to provide the customers

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages.

More information

HCI70R500E 700V N-Channel Super Junction MOSFET

HCI70R500E 700V N-Channel Super Junction MOSFET HCI70R500E 700V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Higher dv/dt ruggedness Application

More information

SW8N80K N-channel Enhancement mode TO-220F/TO-251/TO-251N/TO-252/TO-262 MOSFET

SW8N80K N-channel Enhancement mode TO-220F/TO-251/TO-251N/TO-252/TO-262 MOSFET N-channel Enhancement mode TO-220F/TO-251/TO-251N/TO-252/TO-262 MOSFET Features High ruggedness Low R DS(ON) (Typ 0.67Ω)@V GS =10V Low Gate Charge (Typ 30nC) Improved dv/dt Capability 100% Avalanche Tested

More information

MDF11N60 N-Channel MOSFET 600V, 11 A, 0.55Ω

MDF11N60 N-Channel MOSFET 600V, 11 A, 0.55Ω General Description MDF11N6 is suitable device for SMPS, high Speed switching and general purpose applications. MDF11N6 N-Channel MOSFET 6V, 11 A,.55Ω Features = 6V = 11A @ V GS = V R DS(ON).55Ω @ V GS

More information

Schematic diagram R DS(ON) < V GS =10V. Marking and pin assignment Uninterruptible power supply

Schematic diagram R DS(ON) < V GS =10V. Marking and pin assignment Uninterruptible power supply FNK N-Channel Enhancement Mode Power MOSFET Description The FNK 85H21 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in automotive applications

More information

PE6018. N-Channel Enhancement Mode Power MOSFET. Description. General Features. Application. Absolute Maximum Ratings (T C =25 unless otherwise noted)

PE6018. N-Channel Enhancement Mode Power MOSFET. Description. General Features. Application. Absolute Maximum Ratings (T C =25 unless otherwise noted) N-Channel Enhancement Mode Power MOSFET Description The PE6018 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It D can be used in a wide variety of applications.

More information

Taiwan Goodark Technology Co.,Ltd

Taiwan Goodark Technology Co.,Ltd TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

2N65 650V N-Channel Power MOSFET

2N65 650V N-Channel Power MOSFET R S E M I C O N D U C T O R FEATURES RDS(ON)< 4. 4Ω @VGS=1V, ID= 1A Fast switching capability Lead free in compliance with EU RoHS directive. Improved dv/ dt capability, high ruggedness MECHANICAL DATA

More information

T C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V

T C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V 40V N-Channel Trench MOSFET June 205 BS = 40 V R DS(on) typ = 3.3mΩ = 30 A FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge

More information

SSG4503 N-Ch: 6.9A, 30V, R DS(ON) 25 mω P-Ch: -6.3A, -30V, R DS(ON) 36 mω N & P-Ch Enhancement Mode Power MOSFET

SSG4503 N-Ch: 6.9A, 30V, R DS(ON) 25 mω P-Ch: -6.3A, -30V, R DS(ON) 36 mω N & P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density, which provide excellent R DSON

More information

HCD80R600R 800V N-Channel Super Junction MOSFET

HCD80R600R 800V N-Channel Super Junction MOSFET HCD80R600R 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested Application Switch Mode Power

More information

DFP50N06. N-Channel MOSFET

DFP50N06. N-Channel MOSFET N-Channel MOSFET Features R DS(on) (Max.22 )@ =1V Gate Charge (Typical 36nC) Improved dv/dt Capability High ruggedness 1% Avalanche Tested 1.Gate 2.Drain 3.Source BS = 6V R DS(ON) =.22 ohm = 5A General

More information

T J =25 unless otherwise specified W W/ T J, T STG Operating and Storage Temperature Range -55 to +150

T J =25 unless otherwise specified W W/ T J, T STG Operating and Storage Temperature Range -55 to +150 500V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state

More information

DEVICE SPECIFICATION. Symbol Parameter apq10sn40a Units

DEVICE SPECIFICATION. Symbol Parameter apq10sn40a Units 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state

More information

Device Marking Device Device Package Reel Size Tape width Quantity 6075K FNK6075K TO-252-2L Parameter Symbol Limit Unit

Device Marking Device Device Package Reel Size Tape width Quantity 6075K FNK6075K TO-252-2L Parameter Symbol Limit Unit FNK N-Channel Enhancement Mode Power MOSFET Description The FNK6075K uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

TSF18N60MR TSF18N60MR. 600V N-Channel MOSFET. Features. Absolute Maximum Ratings. Thermal Resistance Characteristics

TSF18N60MR TSF18N60MR. 600V N-Channel MOSFET. Features. Absolute Maximum Ratings. Thermal Resistance Characteristics 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state

More information

12N60 12N65 Power MOSFET

12N60 12N65 Power MOSFET 12 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION 1 1 TO-220 ITO-220/TO-220F is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time,

More information

PPMT12V4 P-Channel MOSFET

PPMT12V4 P-Channel MOSFET P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D(3) MOSFET Product Summary V DS (V) R DS(on) (Ω) I D (A) -2 0.045 @ V GS =-4.5V -4.3 G() S(2)

More information

SSF6602. Main Product Characteristics. Features and Benefits. Description. Absolute Maximum Ratings (T A =25 C unless otherwise specified)

SSF6602. Main Product Characteristics. Features and Benefits. Description. Absolute Maximum Ratings (T A =25 C unless otherwise specified) Main Product Characteristics D2 S1 V (BR)DSS 30V -30V D1 58mΩ@10V 100mΩ@-10V G2 R DS(on)MAX 95mΩ@4.5V 150mΩ@-4.5V G1 S2 I D 3.5A -2.7A SOT-23-6L Schematic Diagram Features and Benefits Advanced MOSFET

More information

SVF18N50F/T/PN_Datasheet

SVF18N50F/T/PN_Datasheet 18A 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF18N50F/T/PN is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-Cell TM structure VDMOS technology.

More information

Taiwan Goodark Technology Co.,Ltd TGD01P30

Taiwan Goodark Technology Co.,Ltd TGD01P30 TGD P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 na (Note 3) On Characteristics Gate Threshold Voltage V GS(th) V DS =V GS,I D =250μA 1.2

Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 na (Note 3) On Characteristics Gate Threshold Voltage V GS(th) V DS =V GS,I D =250μA 1.2 N-Channel Enhancement Mode Power MOSFET Description The HM5N06 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

Taiwan Goodark Technology Co.,Ltd

Taiwan Goodark Technology Co.,Ltd TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

TO-220 G D S. T C = 25 C unless otherwise noted

TO-220 G D S. T C = 25 C unless otherwise noted 500V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state

More information

PKP3105. P-Ch 30V Fast Switching MOSFETs

PKP3105. P-Ch 30V Fast Switching MOSFETs Super Low Gate Charge % EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology Product Summary BVDSS RDSON ID -3V mω -6A Description TO22 Pin

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 20A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N50 is an N-channel MOSFET, it uses UTC s advanced technology to provide the customers with a minimum on-state resistance,

More information

HCA80R250T 800V N-Channel Super Junction MOSFET

HCA80R250T 800V N-Channel Super Junction MOSFET HCA80R250T 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power

More information

HCA60R080FT (Fast Recovery Diode Type) 600V N-Channel Super Junction MOSFET

HCA60R080FT (Fast Recovery Diode Type) 600V N-Channel Super Junction MOSFET HCA60R080FT (Fast Recovery Diode Type) 600V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested

More information

MDF7N60 N-Channel MOSFET 600V, 7 A, 1.1Ω

MDF7N60 N-Channel MOSFET 600V, 7 A, 1.1Ω General Description MDF7N is suitable device for SMPS, high Speed switching and general purpose applications. MDF7N N-Channel MOSFET V, 7 A,.Ω Features = V = 7.A @ = V R DS(ON).Ω @ = V Applications Power

More information

HGI290N10SL. Value T C =25 31 Continuous Drain Current (Silicon Limited) I D T C = Drain to Source Voltage. Symbol V DS

HGI290N10SL. Value T C =25 31 Continuous Drain Current (Silicon Limited) I D T C = Drain to Source Voltage. Symbol V DS , HGI29NSL P- Feature High Speed Power Switching, Logic Level Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness % UIS Tested, % Rg Tested Lead Free, Halogen Free V N-Ch Power MOSFET V

More information

Preliminary TSM9N50 500V N-Channel Power MOSFET

Preliminary TSM9N50 500V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) 500 0.85 @ V GS =10V 4.8 General Description The TSM9N50 N-Channel enhancement mode Power MOSFET

More information

T C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 200 V V GS Gate-Source Voltage ± 30 V

T C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 200 V V GS Gate-Source Voltage ± 30 V 200V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state

More information

TO-252 Pin Configuration

TO-252 Pin Configuration WSF46 General Description The WSF46 is the highest performance trench with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.

More information

AOTF5N50FD. 500V, 5A N-Channel MOSFET with Fast Recovery Diode. V DS I D (at V GS =10V) R DS(ON) (at V GS =10V)

AOTF5N50FD. 500V, 5A N-Channel MOSFET with Fast Recovery Diode. V DS I D (at V GS =10V) R DS(ON) (at V GS =10V) 5V, 5A NChannel MOSFET with Fast Recovery Diode General Description The AOTF5N5FD has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance

More information

Super Junction MOSFET

Super Junction MOSFET APT77N6BC6 APT77N6SC6 6V 77A.4Ω CO LMOS Power Semiconductors Super Junction MOSFET Ultra Low R DS(ON) TO-247 Low Miller Capacitance D 3 PAK Ultra Low Gate Charge, Q g Avalanche Energy Rated Extreme dv

More information

SVF1N60M/B/D_Datasheet

SVF1N60M/B/D_Datasheet 1A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVFM/B/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-Cell TM structure VDMOS technology.

More information

500V N-Channel MOSFET

500V N-Channel MOSFET SLD5N50S2 / SLU5N50S2 500V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored

More information

AOTF7N60FD. 600V, 7A N-Channel MOSFET with Fast Recovery Diode. V DS I D (at V GS =10V)

AOTF7N60FD. 600V, 7A N-Channel MOSFET with Fast Recovery Diode. V DS I D (at V GS =10V) 6V, 7A NChannel MOSFET with Fast Recovery Diode General Description The AOTF7N6FD has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance

More information

Advanced Power Electronics Corp.

Advanced Power Electronics Corp. Advanced Power Electronics Corp AP65SL99AWL Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET % R g & UIS Test D V DS @ T j,max 7V Fast Switching Characteristic R DS(ON) 99mΩ 3 Simple Drive

More information

Taiwan Goodark Technology Co.,Ltd TGD0103M

Taiwan Goodark Technology Co.,Ltd TGD0103M TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

Device Marking Device Device Package Reel Size Tape width Quantity EZ TO

Device Marking Device Device Package Reel Size Tape width Quantity EZ TO N-Channel Trench Power MOSFET General Description The EZ8590 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R DS(ON) is suitable

More information

PJM8205DNSG Dual N Enhancement Field Effect Transistor

PJM8205DNSG Dual N Enhancement Field Effect Transistor DESCRIPTIONS The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection

More information

Electrical Characteristics (T A =25 unless otherwise noted) Off Characteristics Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Vol

Electrical Characteristics (T A =25 unless otherwise noted) Off Characteristics Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Vol N-Channel Enhancement Mode Power MOSFET Description The HM uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

HFP4N65F / HFS4N65F 650V N-Channel MOSFET

HFP4N65F / HFS4N65F 650V N-Channel MOSFET HFP4N65F / HFS4N65F 650V N-Channel MOSFET Features Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant Key Parameters May 2016

More information

HCD6N70S / HCU6N70S 700V N-Channel Super Junction MOSFET

HCD6N70S / HCU6N70S 700V N-Channel Super Junction MOSFET HCD6N70S / HCU6N70S 700V N-Channel Super Junction MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching

More information

HCS80R1K4E 800V N-Channel Super Junction MOSFET

HCS80R1K4E 800V N-Channel Super Junction MOSFET HCS80R1K4E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power

More information

SVF18N50F/T/PN/FJ_Datasheet

SVF18N50F/T/PN/FJ_Datasheet 8A, 500V N-CHANNEL MOSFET 0BGENERAL DESCRIPTION SVF8N50F/T/PN/FJ is an N-channel enhancement mode power MOS field effect transistor which is produced using proprietary F-Cell TM high-voltage planar VDMOS

More information

Features. Information SOT-223. Part Number. Marking. Package SOT-223 SNN01Z60. Unit. V Gate-source voltage A A I DM T c =25 C I D.

Features. Information SOT-223. Part Number. Marking. Package SOT-223 SNN01Z60. Unit. V Gate-source voltage A A I DM T c =25 C I D. Logic Level Gate Drive Application SNN01Z60Q Logic Level N-Ch Power MOSFET Features Logic levell gate drive Max. R DS(ON N) = 135mΩ at V GS = 10V, I D = 0.5A Low R DS(on) provides higher efficiency ESD

More information

TO-220F MDF Series S. Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V.

TO-220F MDF Series S. Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V. General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices

More information

SIS2040 V V Complementary MOSFET. General Features. N-Channel PRODUCT SUMMARY. P-Channel PRODUCT SUMMARY

SIS2040 V V Complementary MOSFET. General Features. N-Channel PRODUCT SUMMARY. P-Channel PRODUCT SUMMARY 20V Complementary MOSFET General Features N-Channel PRODUCT SUMMARY VDSS ID RDS(ON)(mΩ) Typ 20 @ VGS=4.5V 20V 4.5A 25 @ VGS=2.5V Super High Dense Cell Design Reliable and Rugged SOT-23-6L package P-Channel

More information

MDF9N50 N-Channel MOSFET 500V, 9.0 A, 0.85Ω

MDF9N50 N-Channel MOSFET 500V, 9.0 A, 0.85Ω General Description The MDF9N5 uses advanced MagnaChip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF9N5 is suitable device for SMPS,

More information

Product Summary. BV DSS typ. 80 V R DS(ON) max. 4 mω I D 200 A

Product Summary. BV DSS typ. 80 V R DS(ON) max. 4 mω I D 200 A N-Channel Enhancement Mode Power MOSFET General Description The YMP200N08 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use

More information

GGVF4N60F/FG/T/K/M/MJ 4A, 600V, N-Channel MOSFET

GGVF4N60F/FG/T/K/M/MJ 4A, 600V, N-Channel MOSFET General Description The GGVF4N60D/F/FG/T/K/M/MJ is an N-channel enhancement mode power MOS field effect transistor. The improved planar stripe cell and the improved guard ring terminal have been especially

More information

Features. Information I-PAK G D S. Marking. Part Number. Package. I-PAK (Short Lead) SMK0160. Unit. V Gate-source voltage T c =25 C I D I DM

Features. Information I-PAK G D S. Marking. Part Number. Package. I-PAK (Short Lead) SMK0160. Unit. V Gate-source voltage T c =25 C I D I DM Features SWITCHING REGULATO OR APPLICATION Drain-Source breakdown voltage: BV DSS =600V (Min.) Low gate charge: Q g = 3.9nC (Typ.) Low drain-source On resistance: R DS(on) =11.5Ω (Max.) 100% avalanche

More information

UNISONIC TECHNOLOGIES CO., LTD UF5305 Preliminary POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD UF5305 Preliminary POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD UF5305 Preliminary POWER MOSFET -31A, -55V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UF5305 is a P-channel Power MOSFET, it uses UTC s advanced technology to provide the

More information

HCS70R350E 700V N-Channel Super Junction MOSFET

HCS70R350E 700V N-Channel Super Junction MOSFET HCS70R350E 700V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Higher dv/dt ruggedness Application

More information