8N Amps, 600/650 Volts N-CHANNEL POWER MOSFET 8N60 MOSFET N 600V 7.5A 1,2 OHM. Power MOSFET. DESCRIPTION FEATURES

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1 MOSFET N 6V 7.5A,2 OHM 8N6 7.5 Amps,6/65 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N6 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * R DS(ON) GS = V * Ultra low gate charge ( typical 28 nc ) * Low reverse transfer capacitance ( C RSS = typical 2. pf ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness *Pb-free plating product number: 8N6L SYMBOL 2.Drain.Gate 3.Source ORDERING INFORMATION Ordering Number Pin Assignment Package Normal Lead Free Plating 2 3 Packing 8N6-x-TA3-T 8N6L-x-TA3-T TO-22 G D S Tube 8N6-x-TF3-T 8N6L-x-TF3-T TO-22F G D S Tube

2 ABSOLUTE MAXIMUM RATINGS (T C = 25, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage 8N6-A 6 V V DSS 8N6-B 65 V Gate-Source Voltage V GSS ±3 V Avalanche Current (Note ) I AR 7.5 A Continuous Drain Current T C = 25 C 7.5 A I D T C = C 4.6 A Pulsed Drain Current(Note ) I DM 3 A Avalanche Energy Single Pulsed (Note 2) E AS 23 mj Repetitive (Note ) E AR 4.7 mj Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Power Dissipation TO W P D TO-22F 48 W Junction Temperature T J +5 Operating Temperature T OPR -55 ~ +5 Storage Temperature T STG -55 ~ +5 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA Junction-to-Ambient Junction-to-Case PARAMETER SYMBOL RATING UNIT TO C/W θ JA TO-22F 62.5 C/W TO C/W θ JC TO-22F 2.6 C/W ELECTRICAL CHARACTERISTICS (T C =25, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS 8N6-A 6 V Drain-Source Breakdown Voltage BV DSS V GS = V, I D = 25 µa 8N6-B 65 V Drain-Source Leakage Current I DSS V DS = 6 V, V GS = V µa Gate-Source Leakage Current Forward V GS = 3 V, V DS = V na I GSS Reverse V GS = -3 V, V DS = V - na Breakdown Voltage Temperature Coefficient BV DSS /T J I D = 25 µa, Referenced to 25 C.7 V/ ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS = V GS, I D = 25 µa V Static Drain-Source On-State Resistance R DS(ON) V GS = V, I D = 3.75 A..2 Ω DYNAMIC CHARACTERISTICS Input Capacitance C ISS pf Output Capacitance C OSS V DS = 25 V, V GS = V, f = MHz 5 35 pf Reverse Transfer Capacitance C RSS 2 6 pf SWITCHING CHARACTERISTICS Turn-On Delay Time t D(ON) ns Turn-On Rise Time t R = 3V, I D = 7.5 A, R G = 25Ω ns Turn-Off Delay Time t D(OFF) (Note 4, 5) 8 7 ns Turn-Off Fall Time t F ns Total Gate Charge Q G nc V DS = 48V,I D = 7.5A, V GS = V Gate-Source Charge Q GS 4.5 nc (Note 4, 5) Gate-Drain Charge 2 nc Q GD

3 ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage V SD V GS = V, I S = 7.5 A.4 V Maximum Continuous Drain-Source Diode Forward Current I S 7.5 A Maximum Pulsed Drain-Source Diode Forward Current I SM 3 A Reverse Recovery Time t RR V GS = V, I S = 7.5 A, 365 ns Reverse Recovery Charge Q RR di F /dt = A/µs (Note 4) 3.4 µc. Repetitive Rating : Pulse width limited by T J 2. L = 7.3mH, I AS = 7.5A, = 5V, R G = 25 Ω, Starting T J = 25 C 3. I SD 7.5A, di/dt 2A/µs, BV DSS, Starting T J = 25 C 4. Pulse Test: Pulse width 3µs, Duty cycle 2% 5. Essentially independent of operating temperature

4 TEST CIRCUITS AND WAVEFORMS D.U.T. + V DS L R G Driver V GS Same Type as D.U.T. * dv/dt controlled by R G * I SD controlled by pulse period * D.U.T.-Device Under Test Fig. A Peak Diode Recovery dv/dt Test Circuit V GS (Driver) P.W. Period D= P. W. Period V GS = V I FM, Body Diode Forward Current I SD (D.U.T.) di/dt I RM Body Diode Reverse Current Body Diode Recovery dv/dt V DS (D.U.T.) Body Diode Forward Voltage Drop Fig. B Peak Diode Recovery dv/dt Waveforms

5 TEST CIRCUITS AND WAVEFORMS (Cont.) Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L V DS BV DSS I AS R D V D.U.T. I D(t) V DS(t) t p Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms t p Time

6 TYPICAL CHARACTERISTICS Drain-Source On-Resistance, RDS(ON) (ohm) On-Resistance Variation vs. Drain Current and Gate Voltage V GS =V 5 2 Drain Current, I D (A) V GS =2V Note: T J =25 Reverse Drain Current, IDR (A) Body Diode Forward Voltage vs. Source Current V GS =V 2. 25µs Test Source-Drain Voltage, V SD (V) Capacitance Characteristics (Non-Repetitive) 9 Ciss=Cgs+Cgd (Cds=shorted) 7 Coss=Cds+Cgd Crss=Cgd C iss 5 3 C oss 9 7 C rss 5 3. V GS =V 2. f = MHz. Drain-SourceVoltage, V DS (V) Gate Charge Characteristics V DS =3V V DS =48V V DS =2V Note: I D =8A Total Gate Charge, Q G (nc)

7 TYPICAL CHARACTERISTICS(Cont.).2.. Breakdown Voltage Variation vs. Temperature On-Resistance Junction Temperature Note:. V GS =V 2. I D =25µA Junction Temperature, T J () Note:. V GS =V 2. I D =4A Junction Temperature, T J () Maximum Safe Operating Area Operation in This Area is Limited by RDS(on) Maximum Drain Current vs. Case Temperature Drain Current, ID (A).. T J=25 2. T J=5 3. Single Pulse DC µs ms ms µs Drain-Source Voltage, V DS (V) Drain Current, ID (A) Case Temperature, T C () 5 Transient Thermal Response Curve D=.5. D=.2 D=. D= JC (t) =.85/W Max. 2. Duty Factor, D=t/t2 3. T JM-T C=P DM JC (t) Single pulse Square Wave Pulse Duration, t (sec)