STP60NF06 STP60NF06FP

Transcription

1 STP60NF06 STP60NF06FP N-CHANNEL 60V Ω - 60A TO-220/TO-220FP STripFET POWER MOSFET TYPE V DSS R DS(on) I D STP60NF06 STP60NF06FP 60 V 60 V < Ω < Ω 60A 60A TYPICAL R DS (on) = 0.014Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION TO-220 TO-220FP DESCRIPTION This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH-EFFICIENCY DC-DC CONVERTERS UPS AND MOTOR CONTROL AUTOMOTIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP60NF06 STP60NF06FP V DS Drain-source Voltage (V GS =0) 60 V V DGR Drain-gate Voltage (R GS =20kΩ) 60 V V GS Gate- source Voltage ± 20 V I D Drain Current (continuos) at T C =25 C A I D Drain Current (continuos) at T C = 100 C A I DM (l ) Drain Current (pulsed) A P TOT Total Dissipation at T C =25 C W Derating Factor W/ C dv/dt (1) Peak Diode Recovery voltage slope 4 V/ V ISO Iulation Winthstand Voltage (DC) V T stg Storage Temperature T j Max. Operating Junction Temperature 65 to 175 C ( ) Pulse width limited by safe operating area (1) I SD 60A, di/dt 400 A/µs, V DD 24V, Tj T jmax January /9

2 THERMAL DATA TO-220 TO-220FP Rthj-case Thermal Resistance Junction-case Max C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 C/W T l Maximum Lead Temperature For Soldering Purpose 300 C AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit I AR Avalanche Current, Repetitive or Not-Repetitive 30 A (pulse width limited by T j max) E AS Single Pulse Avalanche Energy (starting T j =25 C, I D =I AR,V DD =30V) 360 mj ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF V (BR)DSS Drain-source I D = 250 µa, V GS = 0 60 V Breakdown Voltage I DSS Zero Gate Voltage V DS = Max Rating 1 µa Drain Current (V GS =0) V DS = Max Rating, T C = 125 C 10 µa I GSS Gate-body Leakage Current (V DS =0) V GS = ± 20V ±100 na ON (1) V GS(th) Gate Threshold Voltage V DS =V GS,I D = 250µA 2 4 V R DS(on) Static Drain-source On Resistance V GS = 10V, I D =30A Ω DYNAMIC g fs (1) Forward Traconductance V DS =15V, I D = 30 A 20 S C iss Input Capacitance V DS = 25V, f = 1 MHz, V GS = pf C oss Output Capacitance 360 pf C rss Reverse Trafer Capacitance 125 pf 2/9

3 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON t d(on) Turn-on Delay Time V DD =30V,I D =30A 16 t r Rise Time R G = 4.7Ω V GS = 10V (see test circuit, Figure 3) 108 Q g Total Gate Charge V DD = 48V, I D =60A,V GS = 10V nc Q gs Gate-Source Charge 18 nc Q gd Gate-Drain Charge 14 nc SWITCHING OFF t d(off) t f Turn-off-Delay Time Fall Time V DD =30V,I D =30A, R G =4.7Ω, V GS = 10V (see test circuit, Figure 3) t d(off) t f t c Off-voltage Rise Time Fall Time Cross-over Time Vclamp =48V, I D =60A R G =4.7Ω, V GS = 10V (see test circuit, Figure 3) SOURCE DRAIN DIODE I SD Source-drain Current 60 A I SDM (2) Source-drain Current (pulsed) 240 A V SD (1) Forward On Voltage I SD =60A,V GS =0 1.3 V t rr Q rr I RRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. I SD = 60 A, di/dt = 100A/µs, V DD = 25V, T j = 150 C (see test circuit, Figure 5) nc A Safe Operating Area for TO-220 Safe Operating Area for TO-220FP 3/9

4 Thermal Impedence for TO-220 Thermal Impedence for TO-220FP Output Characteristics Trafer Characteristics Traconductance Static Drain-source On Resistance 4/9

5 Gate Charge vs Gate-source Voltage Capacitance Variatio Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/9

6 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9

7 TO-220 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A C D D E F F F G G H L L L L L L DIA D1 C D A E L2 G1 G H2 F1 Dia. F L5 L7 L9 F2 L6 L4 P011C 7/9