Order code V DS R DS(on) max. I D

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1 Datasheet N-channel 6 V, 61 mω typ., 39 A, MDmesh M6 Power MOSFET in a TO 247 package Features Order code V DS R DS(on) max. I D STW48N6M6 6 V 69 mω 39 A TO-247 D(2, TAB) Reduced switching losses Lower R DS(on) per area vs previous generation Low gate input resistance 1% avalanche tested Zener-protected Applications G(1) Switching applications LLC converters Boost PFC converters S(3) AM1475V1 Description The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent R DS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. Product status link STW48N6M6 Product summary Order code Marking Package Packing STW48N6M6 48N6M6 TO-247 Tube DS Rev 2 - October 218 For further information contact your local STMicroelectronics sales office.

2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V GS Gate-source voltage ±25 V I Drain current (continuous) at T C = 25 C 39 A D Drain current (continuous) at T C = 1 C 25 A I DM (1) Drain current (pulsed) 14 A P TOT Total power dissipation at T C = 25 C 25 W dv/dt (2) Peak diode recovery voltage slope 15 dv/dt (3) MOSFET dv/dt ruggedness 1 V/ns T stg T j Storage temperature range Operating junction temperature range -55 to 15 C 1. Pulse width is limited by safe operating area. 2. I SD 39 A, di/dt 4 A/µs, V DS(peak) < V (BR)DSS, V DD = 4 V 3. V DS 48 V Table 2. Thermal data Symbol Parameter Value Unit R thj-case Thermal resistance junction-case.5 C/W R thj-amb Thermal resistance junction-ambient 5 C/W Table 3. Avalanche characteristics Symbol Parameter Value Unit I AR Avalanche current, repetitive or not repetitive (pulse width limited by T jmax ) 5.5 A E AS Single pulse avalanche energy (starting T j = 25 C, I D = I AR, V DD = 5 V) 95 mj DS Rev 2 page 2/13

3 Electrical characteristics 2 Electrical characteristics (T C = 25 C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS Drain-source breakdown voltage V GS = V, I D = 1 ma 6 V V GS = V, V DS = 6 V 1 I DSS Zero-gate voltage drain current V GS = V, V DS = 6 V, T C = 125 C (1) 1 µa I GSS Gate-body leakage current V DS = V, V GS = ±25 V ±5 µa V GS(th) Gate threshold voltage V DS = V GS, I D = 25 µa V R DS(on) Static drain-source on-resistance V GS = 1 V, I D = 19.5 A mω 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C iss Input capacitance pf C oss Output capacitance V GS = V, V DS = 1 V, f = 1 MHz pf C rss Reverse transfer capacitance pf C oss eq. (1) Equivalent output capacitance V GS = V, V DS = to 48 V pf R G Intrinsic gate resistance f = 1 MHz open drain Ω Q g Total gate charge V DD = 48 V, I D = 39 A, nc Q gs Gate-source charge V GS = to 1 V nc (see Figure 14. Test circuit for gate Q gd Gate-drain charge charge behavior) nc 1. C oss eq. is defined as a constant equivalent capacitance giving the same charging time as C oss when V DS increases from to 8% V DSS. Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d (on) Turn-on delay time V DD = 3 V, I D = 19.5 A, ns t r Rise time R G = 4.7 Ω, V GS = 1 V ns t d(off) Turn-off delay time (see Figure 13. Test circuit for resistive load switching times and ns t f Fall time Figure 18. Switching time waveform) ns DS Rev 2 page 3/13

4 Electrical characteristics Table 7. Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD Source-drain current - 39 A I (1) SDM Source-drain current (pulsed) - 14 A V (2) SD Forward on voltage V GS = V, I SD = 39 A V t rr Reverse recovery time I SD = 39 A, di/dt = 1 A/µs, ns Q rr Reverse recovery charge V DD = 6 V (see Figure 15. Test μc I RRM Reverse recovery current circuit for inductive load switching and diode recovery times) - 28 A t rr Reverse recovery time I SD = 39 A, di/dt = 1 A/µs, ns Q rr Reverse recovery charge V DD = 6 V, T j = 15 C μc I RRM Reverse recovery current (see Figure 15. Test circuit for inductive load switching and diode recovery times) A 1. Pulse width is limited by safe operating area. 2. Pulse test: pulse duration = 3 µs, duty cycle 1.5%. DS Rev 2 page 4/13

5 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance I D (A) 1 2 Operation in this area is limited by R DS(on) GADG SOA tp =1 µs tp =1 µs K 1-1 δ=.5 δ= GC1846_ZTH TJ 15 C T C =25 C V GS =1 V single pulse tp =1 µs tp =1 ms tp =1 ms V DS (V) Single pulse tp(s) Figure 3. Output characteristics Figure 4. Transfer characteristics I D (A) 14 GADG OCH V GS = 9, 1 V I D (A) 14 GADG TCH 12 1 V GS = 8 V 12 1 V DS = 19 V 8 V GS = 7 V V GS = 6 V 2 V GS = 5 V V DS (V) V GS (V) Figure 5. Gate charge vs gate-source voltage Figure 6. Static drain-source on-resistance V DS (V) 6 V DD = 48 V I D = 39 A Qg GADG QVG V GS (V) 12 R DS(on) (mω) 67 V GS = 1 V GADG RID 5 V DS Qgs Q gd Q g (nc) I D (A) DS Rev 2 page 5/13

6 Electrical characteristics (curves) C (pf) 1 4 Figure 7. Capacitance variations GADG CVR Figure 8. Normalized gate threshold voltage vs temperature V GS(th) (norm.) 1.1 GADG VTH 1 3 C ISS f = 1 MHz C OSS C RSS I D = 25 μa V DS (V) T J ( C) Figure 9. Normalized on-resistance vs temperature Figure 1. Normalized V (BR)DSS vs temperature R DS(on) (norm.) GADG RON V (BR)DSS (norm.) GADG BDV 2.5 V GS = 1 V 1.1 I D = 1 ma T J ( C) T J ( C) Figure 11. Output capacitance stored energy Figure 12. Source-drain diode forward characteristics E OSS (µj) GADG EOS V SD (V) GADG SDF T j = -5 C 16.9 T j = 25 C T j = 15 C V DS (V) I SD (A) DS Rev 2 page 6/13

7 Test circuits 3 Test circuits Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior V DD RL VD RL + 22 μf 3.3 μf VDD V GS I G = CONST 1 Ω D.U.T. VGS pulse width RG D.U.T. pulse width 22 μf kω 47 kω V G 1 kω AM1469v1 AM1468v1 Figure 15. Test circuit for inductive load switching and diode recovery times Figure 16. Unclamped inductive load test circuit G 25 Ω A D D.U.T. S B A fast diode B A B G 1 µh D µf + µf VDD D.U.T. VD ID L + 22 µf 3.3 µf VDD + _ RG S Vi pulse width D.U.T. AM1471v1 AM147v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform t on t off V(BR)DSS t d(on) t r t d(off) t f VD 9% 9% IDM ID 1% V DS 1% VDD VDD V GS 9% AM1472v1 1% AM1473v1 DS Rev 2 page 7/13

8 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. DS Rev 2 page 8/13

9 TO-247 package information 4.1 TO-247 package information Figure 19. TO-247 package outline 75325_9 DS Rev 2 page 9/13

10 TO-247 package information Table 8. TO-247 package mechanical data Dim. mm Min. Typ. Max. A A b b b c.4.8 D E e L L L ØP ØR S DS Rev 2 page 1/13

11 Revision history Table 9. Document revision history Date Version Changes 25-Jul Initial release. 25-Oct Modified Table 1. Absolute maximum ratings, Table 4. On/off states and Table 5. Dynamic. Modified Figure 1. Safe operating area, Figure 5. Gate charge vs gate-source voltage, Figure 6. Static drain-source on-resistance, Figure 9. Normalized onresistance vs temperature, Figure 1. Normalized V (BR)DSS vs temperature and Figure 12. Source-drain diode forward characteristics. Minor text changes. DS Rev 2 page 11/13

12 Contents Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package information TO-247 package information...8 Revision history...11 DS Rev 2 page 12/13

13 IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 218 STMicroelectronics All rights reserved DS Rev 2 page 13/13

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