STP3NB90 STP3NB90FP N-CHANNEL 900V - 4 Ω A TO-220/TO-220FP PowerMesh MOSFET
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1 STP3NB90 STP3NB90FP N-CHANNEL 900V - 4 Ω A TO-220/TO-220FP PowerMesh MOSFET TYPE V DSS R DS(on) I D Pw STP3NB90 STP3NB90FP 900 V 900 V TYPICAL R DS (on) = 4 Ω <4.2Ω <4.2Ω 3.5 A 3.5 A EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES 110 W 35 W DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company s proprieraty edge termination structure, gives the lowest R DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STP3NB90 P3NB90 TO-220 TUBE STP3NB90FP P3NB90FP TO-220FP TUBE October /10
2 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP3NB90 STP3NB90FP V DS Drain-source Voltage (V GS =0) 900 V V DGR Drain-gate Voltage (R GS =20kΩ) 900 V V GS Gate- source Voltage ±30 V I D Drain Current (continuous) at T C = 25 C (*) A I D Drain Current (continuous) at T C = 100 C (*) A I ( ) DM Drain Current (pulsed) (*) A P TOT Total Dissipation at T C = 25 C W Derating Factor W/ C dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ V ISO Iulation Withstand Voltage (DC) V T j T stg Operating Junction Temperature Storage Temperature ( )Pulse width limited by safe operating area (1) I SD 3.5A, di/dt 200 A/µs, V DD V (BR)DSS,Tj T jmax (*)Limited only by maximum temperature allowed 55 to 150 C THERMAL DATA TO-220 TO-220FP Rthj-case Thermal Resistance Junction-case Max C/W Rthj-amb T l Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose C/W C AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max) 3.5 A E AS Single Pulse Avalanche Energy (starting T j = 25 C, I D =I AR,V DD =50V) 230 mj 2/10
3 ELECTRICAL CHARACTERISTICS (T CASE = 25 C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol Parameter Test Conditio Min. Typ. Max. Unit V (BR)DSS Drain-source Breakdown Voltage I D =1mA,V GS =0 900 V I DSS I GSS DYNAMIC Zero Gate Voltage Drain Current (V GS =0) Gate-body Leakage Current (V DS =0) V DS = Max Rating V DS = Max Rating, T C = 125 C 1 50 V GS = ±30V ±100 na V GS(th) Gate Threshold Voltage V DS =V GS,I D = 250 µa V R DS(on) Static Drain-source On Resistance V GS =10V,I D = 1.7 A Ω Symbol Parameter Test Conditio Min. Typ. Max. Unit g fs (1) Forward Traconductance V DS =15V;I D = 1.7 A 3 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Trafer Capacitance V DS =25V,f=1MHz,V GS = µa µa pf pf pf SWITCHING ON Symbol Parameter Test Conditio Min. Typ. Max. Unit t d(on) t r Turn-on Delay Time Rise Time V DD =450V,I D = 1.75 A R G = 4.7Ω V GS =10V (Resistive Load see, Figure 3) Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD =720V,I D = 3.5 A, V GS =10V nc nc nc SWITCHING OFF Symbol Parameter Test Conditio Min. Typ. Max. Unit t d(off) t f Turn-off Delay Time Fall Time V DD = 450 V, I D = 1.75 A R G =4.7ΩV GS =10V (Resistive Load see, Figure 3) t r(voff) t f t c Off-voltage Rise Time Fall Time Cross-over Time V DD = 720 V, I D = 3.5 A, R G =4.7Ω, V GS =10V (Inductive Load see, Figure 5) SOURCE DRAIN DIODE Symbol Parameter Test Conditio Min. Typ. Max. Unit I SD Source-drain Current 3.5 A I SDM (2) Source-drain Current (pulsed) 14 A V SD (1) Forward On Voltage I SD = 3.5 A, V GS =0 1.6 V t rr Q rr I RRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. I SD = 3.5 A, di/dt = 100 A/µs, V DD =100V,T j =150 C (see test circuit, Figure 5) µc A 3/10
4 Safe Operating Area For TO-220 Thermal Impedance For TO-220 Safe Operating Area For TO-220FP Thermal Impedance For TO-220FP Output Characteristics Trafer Characteristics 4/10
5 Traconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variatio Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature 5/10
6 Source-drain Diode Forward Characteristics Normalized BVDSS vs Temperature Maximum Avalanche Energy vs Temperature 6/10
7 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/10
8 TO-220 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A C D D E F F F G G H L L L L L L DIA D1 C F G H2 D A E L2 G1 F1 Dia. L5 L7 L9 F2 L6 L4 P011C 8/10
9 TO-220FP MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A B D E F F F G G H L L L L L Ø B D A E L6 L7 L3 H G G1 F1 F L2 F2 L /10
10 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no respoibility for the coequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No licee is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specificatio mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. 10/10
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