STP36NF06L STB36NF06L
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1 STP36NF06L STB36NF06L N-channel 60V Ω - 30A - TO D 2 PAK STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP36NF06L 60V < 0.04Ω 30A STB36NF06L 60V < 0.04Ω 30A Exceptional dv/dt capability 100% avalanche tested Low threshold drive 1 D²PAK 3 TO Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Internal schematic diagram Applications Switching application Order codes Sales type Marking Package Packaging STP36NF06L P36NF06L TO-220 Tube STB36NF06L B36NF06 D²PAK Tape & reel June 2006 Rev 3 1/
2 Contents: STP36NF06L - STB36NF06L Contents: 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuit Package mechanical data Packaging mechanical data Revision history /14
3 STP36NF06L - STB36NF06L Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V DS Drain-source Voltage (V GS =0) 60 V V DGR Drain-gate voltage (R GS =20KΩ) 60 V V GS Gate-source voltage ±18 V I D Drain-current (continuos) at Tc=25 C 30 A I D Drain-current (continuos) at Tc=100 C 21 A (1) I DM Drain-current (pulsed) 120 A P TOT Total dissipation at Tc=25 C 70 W dv/dt (2) E AS (3) T j T stg Derating factor 0.47 W/ C Peak diode recovery voltage slope 10 V/ns Single pulse avalanche energy 225 mj Operating junction temperature Storage temperature 1. Pulse width limited by safe operating area. 2. I SD 30A, di/dt 400A/µs, V DD < V (BR)DSS. Tj < Tjmax 3. Starting Tj=25 C, I D =15A, V DD =30V -55 to 175 C Table 2. Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 2.14 C/W Rthj-amb Thermal resistance junction-ambient (free air) max 62.5 C/W T l Maximum lead temperature for soldering purpose 300 C 3/14
4 Electrical characteristics STP36NF06L - STB36NF06L 2 Electrical characteristics (T CASE =25 C unless otherwise specified) Table 3. Static Symbol Parameter Test condictions Min. Typ. Max. Unit V (BR)DSS I DSS I GSS Drain-source breakdown voltage Zero gate voltage drain current (V GS =0) Gate-body leakage current (V DS =0) I D =250µA, V GS =0 60 V V DS =Max rating V DS =Max rating Tc=125 C 1 10 µa µa V GS =±18V ±100 na V GS(th) Gate Threshold Voltage V DS =V GS, I D =250µA V R DS(on) Static drain-source on resistance V GS =10V, I D =15A V GS =5V, I D =15A Ω Ω Table 4. Dynamic Symbol Parameter Test condictions Min Typ Max Unit gfs Forward transconductance V DS =15V, I D =15A 15 S C iss C oss C rss Input capacitance Output capacitance Reverse transfer capacitance V DS =25V, f=1mhz,v GS = pf pf pf Q g Q gs Q gd Total gate charge Gate-source charge Gate-drain charge V DD =30V, I D =30A V GS =5V nc nc nc 4/14
5 STP36NF06L - STB36NF06L Electrical characteristics Table 5. Switching on/off (inductive load) Symbol Parameter Test condictions Min. Typ. Max. Unit t d(on) t r Turn-on delay Time Rise time V DD =30V, I D =15A R G =4.7Ω, V GS =5V (see Figure 14) ns ns t d(off) t f Turn-off delay time Fall time V DD =30V, I D =15A R G =4.7Ω, V GS =5V (see Figure 14) ns ns Table 6. Source Drain Diode Symbol Parameter Test condictions Min. Typ. Max. Unit I SD I SDM (1) V SD (2) t rr Q rr I RRM Source-drain current Source-drain current (pulsed) Forward on voltage I SD =24A, V GS =0 1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current I SD =20A, V DD =20V, di/dt=100a/µs, Tj=150 C A A ns nc A 1. Pulse width limited by safe operating area. 2. Pused: pulse duration=300µs, duty cycle 1.5% 5/14
6 Electrical characteristics STP36NF06L - STB36NF06L 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/14
7 STP36NF06L - STB36NF06L Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations Figure 9. Normalized gate thereshold voltage vs temperature Figure 10. Normalized on resistance vs temperature Figure 11. Normalized B Vdss vs temperature 7/14
8 Test circuit STP36NF06L - STB36NF06L 3 Test circuit Figure 12. Unclamped inductive load test circuit Figure 13. Unclamped inductive wafeform Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit Figure 16. Test circuit for inductive load switching and diode recovery times Figure 17. Switching time waveform 8/14
9 STP36NF06L - STB36NF06L Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: 9/14
10 Package mechanical data STP36NF06L - STB36NF06L TO-220 MECHANICAL DATA DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A b b c D E e e F H J L L L L øp Q /14
11 3 STP36NF06L - STB36NF06L Package mechanical data D 2 PAK MECHANICAL DATA TO-247 MECHANICAL DATA DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A A A B B C C D D E E G L L L M R V2 0º 4º 1 11/14
12 Packaging mechanical data STP36NF06L - STB36NF06L 5 Packaging mechanical data D 2 PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A B C D G N T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A B D D E F K P P P R T W * on sales type BASE QTY BULK QTY /14
13 STP36NF06L - STB36NF06L Revision history 6 Revision history Table 7. Revision history Date Revision Changes 14-Jun First release 13-Mar Complete version 26-Jun New template, no content change 13/14
14 STP36NF06L - STB36NF06L Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT DESIGNED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 14/14
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