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1 N-channel 30V Ω - 30A - PolarPAK STripFET Power MOSFET Features Type V DSS R DS(on) R DS(on) *Q g P TOT STK850 30V <0.0029Ω 71nC*mΩ 5.2W Ultra low top and bottom junction to case thermal resistance Very low capacitances 100% Rg tested Fully encapsulated die 100% Matte tin finish (in compliance with the 2002/95/EC european directive) PolarPAK is a trademark of VISHAY Application Switching applications Description This Power MOSFET is the latest development of STMicroelectronics unique single feature size strip-based process. The resulting transistor shows extremely high packing density for low onresistance, moreover the double sides cooling package with ultra low junction to case thermal resistance allows to handle higher levels of current. Figure 1. PolarPAK Internal schematic diagram Bottom View Top View Table 1. Device summary Order code Marking Package Packaging STK850 K850 PolarPAK Tape & reel October 2007 Rev 9 1/
2 Contents STK850 Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package mechanical data Revision history /16
3 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V DS Drain-source voltage (V GS = 0) 30 V V GS (1) Gate-source voltage ± 16 V V GS (2) 1. Continuous mode Gate-source voltage ± 18 V I D (4) Drain current (continuous) at T C = 25 C 30 A I D Drain current (continuous) at T C = 100 C A I DM (3) P TOT (4) E AS (5) T J T stg Drain current (pulsed) 120 A Total dissipation at T C = 25 C 5.2 W Derating factor W/ C Single pulse avalanche energy 1.4 J Operating junction temperature Storage temperature -55 to 150 C 2. Guaranteed for test time < 15ms 3. Pulse width limited by package 4. When mounted on FR-4 board of 1inch 2, 2 oz. Cu. and 10sec 5. Starting T J = 25 C, I D = 15A, V DD = 25V Table 3. Thermal data Symbol Parameter Typ. Max. Unit Rthj-amb (1) Thermal resistance junction-amb C/W Rthj-c (2) Thermal resistance junction-case (top drain) C/W Rthj-c (3) Thermal resistance junction-case (source) C/W 1. When mounted on FR-4 board of 1inch 2, 2 oz. Cu. and 10sec 2. Steady State 3. Measured at Source pin when the device is mounted on FR-4 board in steady state 3/16
4 Electrical characteristics STK850 2 Electrical characteristics (T CASE =25 C unless otherwise specified) Table 4. On/off Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS I DSS I GSS Drain-source breakdown voltage Zero gate voltage drain current (V GS = 0) Gate body leakage current (V DS = 0) I D = 250µA, V GS = 0 30 V V DS = Max rating, V DS = Max rating,tc=125 C 1 10 µa µa V GS = ±16V ±100 na V GS(th) Gate threshold voltage V DS = V GS, I D = 250µA V R DS(on) Table 5. Static drain-source on resistance Dynamic V GS = 10V, I D = 15A V GS = 4.5V, I D = 15A Symbol Parameter Test conditions Min. Typ. Max. Unit C iss C oss C rss Q g Q gs Q gd Q gs1 Q gs2 R G Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Pre V th gate-to-source charge Post V th gate-to-source charge Gate input resistance V DS =25V, f=1 MHz, V GS =0 V DD =15V, I D = 30A V GS =4.5V (see Figure 16) V DD =15V, I D = 12A V GS =4.5V (see Figure 21) f=1 MHz Gate DC Bias = 0 Test signal level = 20mV open drain Ω Ω pf pf pf 32.5 nc nc nc nc nc 1.1 Ω 4/16
5 Electrical characteristics Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) t r t d(off) t f Table 7. Turn-on delay time Rise time Turn-off delay time Fall time Source drain diode V DD = 15V, I D = 15A, R G =4.7Ω, V GS =4.5V (see Figure 15) V DD =15V, I D = 15A, R G =4.7Ω, V GS =4.5V (see Figure 15) Symbol Parameter Test conditions Min. Typ. Max. Unit I SD I (1) SDM V SD (2) t rr Q rr I RRM Source-drain current Source-drain current (pulsed) 1. Pulse width limited by package 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward on voltage I SD = 15A, V GS =0 1.2 V Reverse recovery time Reverse recovery charge Reverse recovery current I SD = 30A, di/dt = 100A/µs, V DD =20V, T J =150 C (see Figure 20) ns ns ns ns A A ns nc A 5/16
6 Electrical characteristics STK Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Transconductance Figure 7. Static drain-source on resistance 6/16
7 Electrical characteristics Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 12. Source-drain diode forward characteristics Figure 11. Normalized on resistance vs temperature Figure 13. Normalized B VDSS vs temperature 7/16
8 Electrical characteristics STK850 Figure 14. Allowable I AV vs time in avalanche The previous curve gives the single pulse safe operating area for unclamped inductive loads, under the following conditions: P D(AVE) =0.5*(1.3*B VDSS *I AV ) E AS(AR) =P D(AVE) *t AV Where: I AV is the allowable current in avalanche P D(AVE) is the average power dissipation in avalanche (single pulse) t AV is the time in avalanche 8/16
9 Test circuits 3 Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit Figure 17. Test circuit for inductive load switching and diode recovery times Figure 19. Unclamped inductive waveform Figure 18. Unclamped inductive load test circuit Figure 20. Switching time waveform 9/16
10 Test circuits STK850 Figure 21. Gate charge waveform Vds Id Vgs Vgs(th) Qgs1 Qgs2 Qgd 10/16
11 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: 11/16
12 Package mechanical data STK850 Table 8. Ref. PolarPAK (option L ) mechanical data mm inch Min. Typ. Max. Min. Typ. Max. A A b b b b b c D D E E H H H H K K K K M M M M P T T T T T < /16
13 Package mechanical data Figure 22. PolarPAK (option L ) drawings 13/16
14 Package mechanical data STK850 Figure 23. Recommended PAD layout 14/16
15 Revision history 5 Revision history Document Table 9. Document revision history Date Revision Changes 10-Nov First version 19-Dec Complete version 30-Jan Modified description on first page 21-Mar The document has been reformatted 25-May New note on Table 2 10-Oct Modified general features 08-May New data on Table 5 and new Figure Sep Updated mechanical data 01-Oct Inserted new Figure 23: Recommended PAD layout 15/16
16 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 16/16
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