STP12NB30 STP12NB30FP

Transcription

1 STP12NB30 STP12NB30FP N - CHNNEL ENHNCEMENT MODE PowerMESH MOSFET PRELIMINRY DT TYPE V DSS R DS(on) I D STP3NB60 STP12NB30FP 300 V 300 V <0.40Ω <0.40Ω TYPICL RDS(on) = 0.34 Ω EXTREMELY HIGH dv/dt CPBILITY 0% VLNCHE TESTED VERY LOW INTRINSIC CPCITNCES GTE CHRGE MINIMIZED DESCRIPTION Using the latest high voltage MESH OVERLY process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics TO-220 TO-220FP INTERNL SCHEMTIC DIGRM PPLICTIONS HIGH CURRENT, HIGH SPEED SWITCHING UNINTERRUPTIBLE POWER SUPPLY(UPS) DC-DC & DC-C CONVERTERS FOR TELECOM, INDUSTRIL ND CONSUMER ENVIRONMENT BSOLUTE MXIMUM RTINGS Symbol Parameter Value Unit STP12NB30 STP12NB30FP V DS Drain-source Voltage (V GS =0) 300 V VDGR Drain- gate Voltage (RGS =20kΩ) 300 V VGS Gate-source Voltage ± 30 V ID Drain Current (continuous) at Tc =25 o C I D Drain Current (continuous) at T c =0 o C I DM ( ) Drain Current (pulsed) Ptot Total Dissipation at Tc =25 o C W Derating Factor W/ o C dv/dt(1) Peak Diode Recovery voltage slope V/ VISO Iulation Withstand Voltage (DC) 2000 V Tstg Storage Temperature -65 to 150 o C Tj Max. Operating Junction Temperature 150 o C January /6

2 THERML DT TO-220 TO220-FP Rthj-case Thermal Resistance Junction-case Max Rt hj- amb Rthc-sink Tl Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose o C/W o C/W o C/W o C VLNCHE CHRCTERISTICS Symbol Parameter Max Value Unit I R valanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ <1%) 12 ES Single Pulse valanche Energy (starting Tj =25 o C, ID =IR, VDD =50V) 250 mj ELECTRICL CHRCTERISTICS (T case =25 o C unless otherwise specified) OFF V(BR)DSS Drain-source Breakdown Voltage I D =250µ V GS =0 300 V IDSS I GSS Zero Gate Voltage Drain Current (V GS =0) Gate-body Leakage Current (VDS =0) VDS =MaxRating V DS =MaxRating T c =125 o C VGS = ± 30 V ± 0 n 1 µ µ ON ( ) V GS(th) Gate Threshold Voltage V DS =V GS I D =250µ V R DS(on) Static Drain-source On Resistance V GS =V I D = Ω ID(on) On State Drain Current VDS >ID(on) xrds(on)max VGS =V 12 DYNMIC gfs ( ) Ciss C oss Crss Forward Traconductance Input Capacitance Output Capacitance Reverse Trafer Capacitance VDS >ID(on) xrds(on)max ID =6 3 S VDS =25V f=1mhz VGS = pf pf pf 2/6

3 ELECTRICL CHRCTERISTICS (continued) SWITCHING ON td(on) t r Turn-on Time Rise Time VDD =150V ID=6 RG=4.7 Ω VGS =V Qg Q gs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =240 V ID =12 VGS =V nc nc nc SWITCHING OFF t r(voff) tf t c Off-voltage Rise Time Fall Time Cross-over Time V DD =240V I D =12 R G =4.7 Ω V GS =V SOURCE DRIN DIODE I SD I SDM ( ) Source-drain Current Source-drain Current (pulsed) VSD ( ) Forward On Voltage ISD =12 VGS =0 1.5 V trr Reverse Recovery I SD = 12 di/dt = 0 /µs 250 Qrr IRRM Time Reverse Recovery Charge Reverse Recovery Current VDD =0V Tj=150 o C 2 16 µc ( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( ) Pulse width limited by safe operating area /6

4 TO-220 MECHNICL DT DIM. mm inch MIN. TYP. MX. MIN. TYP. MX C D D E F F F G G H L L L L L L DI D1 F G C D E L2 G1 H2 F1 Dia. L5 L7 L9 F2 L6 L4 P011C 4/6

5 TO-220FP MECHNICL DT DIM. mm inch MIN. TYP. MX. MIN. TYP. MX B D E F F F G G H L L L L L Ø H G B D E L6 L7 L3 F1 F F2 G L2 L4 5/6

6 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no respoability for the coequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No licee is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificatio mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics SGS-THOMSON Microelectronics - Printed in Italy - ll Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPNIES ustralia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.... 6/6