Symbol Parameter TSB20N60S TSP20N60S TSF20N60S Unit 20* 20* I D -Continuous (TC = 100 ) 12*
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1 TSP20N60S,TSF20N60S, TSB20N60S 600V N-Channel MOSFET Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ- FET is suitable for various AC/DC power conversion inswitching mode operation for higher efficiency. September, 2013 SJ-FET Features = 150 Typ. RDS(on) = 0.16Ω Ultra Low Gate Charge (typ. Qg = 63nC) 100% avalanche tested Rohs Compliant D2-PAK (TO-263) Absolute Maximum Ratings Symbol Parameter TSB20N60S TSP20N60S TSF20N60S Unit V DSS Drain-Source Voltage 600 V Drain Current -Continuous (TC = 25 ) 20* 20 20* I D -Continuous (TC = 100 ) 12* 12 12* A I DM Drain Current - Pulsed (Note 1) 60* 60 60* A V GSS Gate-Source voltage ±30 V E AS Single Pulsed Avalanche Energy (Note 2) 600 mj I AR Avalanche Current (Note 1) 20 A E AR Repetitive Avalanche Energy (Note 1) 20.5 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P D Power Dissipation (TC = 25 ) -Derate above 25 T J, T STG Operating and Storage Temperature Range -55 to +150 T L Maximum Lead Temperature for Soldering Purpose, 1/8 from Case for 5 Seconds 300 * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter TSB20N60S TSP20N60S TSF20N60S Unit R θjc Thermal Resistance, Junction-to-Case /W R θcs Thermal Resistance, Case-to-Sink Typ /W R θja Thermal Resistance, Junction-to-Ambient /W W W/
2 Symbol Parameter Conditions Min Typ Max Unit Off Characteristics BVDSS ΔBVDSS / ΔTJ IDSS IGTSF IGSSR On Characteristics Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0V, ID = 250µA, TJ = V VGS = 0V, ID = 250µA, TJ = V ID = 250µA, Referenced to V/ VDS = 600V, VGS = 0V VDS =480V, TC = µa µa VGS = 30V, VDS = 0V na VGS = -30V, VDS = 0V na VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA V RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 10A Ω gfs Forward Transconductance VDS = 40V, ID =5A (Note 4) S Rg Gate Resistance F=1MHz, open drain Ω Dynamic Characteristics Ciss Electrical Characteristics TC = 25 unless otherwise noted Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz pf Coss Output Capacitance pf Crss Reverse Transfer Capacitance pf Switching Characteristics td(on) Turn-On Delay Time VDD = 400V, ID = 10A RG = ns tr Turn-On Rise Time 20Ω(Note 4, 5) ns td(off) Turn-Off Delay Time ns tf Turn-Off Fall Time ns Qg Total Gate Charge VDS = 480V, ID = 20A VGS = 10V (Note 4, 5) nc Qgs Gate-Source Charge nc Qgd Gate-Drain Charge nc Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current A ISM Maximum Pulsed Drain-Source Diode Forward Current A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 10A V trr Reverse Recovery Time VGS = 0V, IS = 10A dif/dt ns Qrr Reverse Recovery Charge =100A/µs (Note 4) µc Irrm Peak Reverse Recovery Current A NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L=10.5mH, I AS =10A, VDD=150V, Starting TJ=25 3. I SD 20A, di/dt 200A/us, V DD BV DSS, Starting TJ = Pulse Test: Pulse width 300us, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
3 Typical Performance Characteristics Drain-source voltage VDS (V) Drain-source voltage VDS (V) Figure 1: On-Region C Figure 2: On-Region C On-Resistance(Ω) VGS (V) Figure 3: Transfer Charateristics ID (A) Figure 4: On-Resistance vs. Drain Current (ID) Temperature ( C) Figure 5: On-Resistance vs. Junction Temperature T J ( C) Figure 6: Break Down vs. Junction Temperature
4 Typical Performance Characteristics VSD (V) Figure 7: Body-Diode Characteristics Qg (nc) Figure 8: Gate-Charge Characteristics VDS (V) Figure 9: Capacitance Characteristics C=f(VDS), VGS=0V, f=1mhz VDS (V) Figure 10: C oss stored Energy VDS (V) Figure 11: Maximum Forward Biased Safe Operating Area Pulse Width (s) Figure 12: Single Pulse Power Rating Junction to Case
5 Typical Performance Characteristics Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance T CASE ( C) Figure 13: Avalanche energy T CASE ( C) Figure 14: Current De-rating
6 Typical Performance Characteristics Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-Ambient Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance
7
8 PKG TO-220F
9 PKG TO-263
10 PKG TO-220
Symbol Parameter TSB10N60S TSP10N60S TSF10N60S Unit V DSS Drain-Source Voltage 600 V Drain Current -Continuous (TC = 25 ) 9.5*
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PD-9797C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNJ67234 K Rads (Si).2Ω 2.4A JANSR2N7593U3 IRHNJ63234 3K Rads (Si).2Ω
More informationVDS = 20V, ID = 13A. Pin 1. Symbol Parameter Rating Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±10 V TA=25 C 13 A TA=70 C 10.
Dual N-Channel MOSFET DESCRIPTION FEATURES SMC4228 is the Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored
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SGT19N6SJ /SGF19N6SJ/SGW19N6SJ 6V, 2.5A,.19Ω Features RDS(on) =.19Ω (Max.)@ VGS = 1V, ID = 1A Ultra low gate charge ( Typ. Qg = 37nC) Low effective output capacitance 1% avalanche tested RoHS compliant
More informationSMD Type. P-Channel MOSFET SI2333DS-HF (KI2333DS-HF) Features. Absolute Maximum Ratings Ta = 25
P-Channel SOT-.9 -.. -. Unit: mm Features VDS (V) =-V ID =-5. A (VGS =-.5V) RDS(ON) < mω (VGS =-.5V) RDS(ON) < mω (VGS =-.5V). -..95 -..9 -.. -..55.. -. +.5 RDS(ON) < 59mΩ (VGS =-.V) Pb Free Package May
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PD-9586D RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) IRHNJ673 JANSR2N7587U3 V, N-CHANNEL REF: MIL-PRF-95/746 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number
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PD-973B RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.5) Product Summary Part Number Radiation Level RDS(on) ID IRHLNJ7734 K Rads (Si).35Ω 22A* IRHLNJ7334 3K Rads (Si).35Ω 22A* 2N766U3
More information2N7624U3 LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) 60V, P-CHANNEL TECHNOLOGY. Absolute Maximum Ratings
PD-9732 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.5) 2N7624U3 IRHLNJ79734 6V, P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHLNJ79734 K Rads (Si).72Ω
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N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP wide creepage package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID STFH18N60M2 650 V 0.28 Ω 13 A Extremely
More informationN-channel 600 V, 0.68 Ω typ., 10 A, SuperMESH Power MOSFET in a TO-220FP ultra narrow leads package. Features. Description
N-channel 600 V, 0.68 Ω typ., 10 A, SuperMESH Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code VDS RDS(on) max. ID Ptot STFU10NK60Z 600 V 0.75 Ω 10
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PD-9736 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (4-LEAD FLAT PACK) 2N763M2 IRHLA797Z4 6V, Quad P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHLA797Z4 K Rads
More informationIRFE230 JANTXV2N6798U SURFACE MOUNT (LCC-18) 200V, N-CHANNEL REF:MIL-PRF-19500/557. Absolute Maximum Ratings PD-91715C.
PD-975C REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-8) Product Summary Part Number BVDSS RDS(on) ID IRFE230 200V 0.40Ω 5.5A IRFE230 JANTX2N6798U JANTXV2N6798U REF:MIL-PRF-9500/557
More informationComplementary MOSFET
General Description ELM66EA-S uses advanced trench technology to provide excellent Rds(on) and low gate charge. Maximum Absolute Ratings ELM66EA-S N-channel P-channel Vds=V Vds=-V Id=3.A(Vgs=.V) Id=-.A(Vgs=-.V)
More informationN-channel 650 V, 0.15 Ω typ., 20 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package. Features. Description.
N-channel 650 V, 0.15 Ω typ., 20 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code VDS RDS(on) max ID 650 V 0.18 Ω 20 A 1 2 3 Extremely low
More informationWFF840. nnel. Thermal Characteristics. Features. General Description TO220F. Parameter. Units. Units. Parameter. Value. Symbol
Silicon N-Chann nnel MOSFET Features 8A,500V,R DS(on) (Max 08Ω)@V GS =10V Ultra-low Gate Charge(Typical 48nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage ( V ISO = 4000V AC ) Maximum
More informationIRHG V, Quad N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036) PD-94432C. 1 TECHNOLOGY. Product Summary MO-036AB
PD-94432C RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-36) Product Summary Part Number Radiation Level RDS(on) ID IRHG57 K Rads (Si).29Ω.6A IRHG53 3K Rads (Si).29Ω.6A IRHG54 5K Rads (Si).29Ω.6A IRHG58
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PD-9792C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.2) Product Summary IRHNM57 JANSR2N753U8 V, N-CHANNEL REF: MIL-PRF-95/743 5 TECHNOLOGY Part Number Radiation Level RDS(on) ID QPL Part Number
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SLD8N65S / SLU8N65S 650V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored
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More informationSymbol Parameter Rating Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ±20 V TC=25 C -22 A
SMC22H Single P-Channel MOSFET DESCRIPTION SMC22 is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored
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HCA80R250T 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
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PD-9735 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (4-LEAD FLAT PACK) Product Summary Part Number Radiation Level RDS(on) ID IRHLA77Z4 K Rads (Si).6Ω.8A IRHLA73Z4 3K Rads (Si).6Ω.8A 2N762M2
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N-channel 600 V, 1.3 Ω typ., 3.5 A MDmesh M2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS@ TJmax RDS(on) max. ID STF5N60M2 650 V 1.4 Ω 3.5 A Extremely low gate
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HCD80R650E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
More informationN-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY V (BR)DSS R DS(ON) I D 75 8mΩ 8A G D S. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (T C = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage
More informationSchematic diagram R DS(ON) < V GS =10V. Marking and pin assignment Uninterruptible power supply
FNK N-Channel Enhancement Mode Power MOSFET Description The FNK 85H21 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in automotive applications
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PD-93754G RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNJ573 K Rads (Si).6Ω 22A* JANSR2N748U3 IRHNJ533 3K Rads (Si).6Ω
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2N7632UC IRHLUC767Z4 RADIATION HARDENED 6V, Combination N-P-CHANNEL LOGIC LEVEL POWER MOSFET TECHNOLOGY SURFACE MOUNT (LCC-6) Product Summary Part Number Radiation Level R DS(on) I D CHANNEL IRHLUC767Z4
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PD - 90420 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) IRF9240 200V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF9240-200V 0.5Ω -11A The HEXFET technology
More informationN-channel 600 V, 0.55 Ω typ., 7.5 A MDmesh M2 Power MOSFET in a TO-220FP wide creepage package. Features. Description.
N-channel 600 V, 0.55 Ω typ., 7.5 A MDmesh M2 Power MOSFET in a TO-220FP wide creepage package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID STFH10N60M2 650 V 0.60 Ω 7.5 A
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packing STF24N60DM2 24N60DM2 TO-220FP Tube
N-channel 600 V, 0.175 Ω typ., 18 A MDmesh DM2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max. ID 650 V 0.200 Ω 18 A TO-220FP Fast-recovery body
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PD-94283E RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) IRHMS5976 JANSR2N755T V, P-CHANNEL REF: MIL-PRF-95/73 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part
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PD-96958B RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 2N7582T IRHMS6764 5V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHMS6764 K Rads (Si).9Ω 45A*
More informationFeatures. Description. Table 1: Device summary. Order code Marking Package Packing STW75N60M6 75N60M6 TO-247 Tube
N-channel 600 V, 32 mω typ., 72 A MDmesh M6 Power MOSFET in TO-247 package Datasheet - production data Features Order code VDS RDS(on) max. ID STW75N60M6 600 V 36 mω 72 A 3 2 1 TO-247 Figure 1: Internal
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