N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR

Transcription

1 N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP38N06 60 V < 0.03 Ω 38 A (*) PRELIMINARY DATA TYPICAL RDS(on) = Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100 o C HIGH CURRENT CAPABILITY 175 o C OPERATING TEMPERATURE HIGH dv/dt RUGGEDNESS APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING POWER MOTOR CONTROL DC-DC & DC-AC CONVERTERS SYNCRONOUS RECTIFICATION TO INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS =0) 60 V VDGR Drain- gate Voltage (RGS =20kΩ) 60 V VGS Gate-source Voltage ± 20 V I D Drain Current (continuous) at T c =25 o C 38 A I D Drain Current (continuous) at T c =100 o C 26 A IDM( ) Drain Current (pulsed) 152 A Ptot Total Dissipation at Tc =25 o C 90 W Derating Factor 0.6 W/ o C dv/dt(1) Peak Diode Recovery voltage slope 7 V/ Tstg Storage Temperature -65 to 175 Tj Max. Operating Junction Temperature 175 ( ) Pulse width limited by safe operating area o C o C March /11

2 THERMAL DATA R thj-case R t hj- amb R thc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose o C/W o C/W o C/W o C AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR E AS EAR I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ <1%) Single Pulse Avalanche Energy (starting T j =25 o C, I D =I AR,V DD =25V) Repetitive Avalanche Energy (pulse width limited by Tj max, δ <1%) Avalanche Current, Repetitive or Not-Repetitive (Tc =100 o C, pulse width limited by Tj max, δ < 1%) 38 A 300 mj 75 mj 26 A ELECTRICAL CHARACTERISTICS (Tcase =25 o C unless otherwise specified) OFF Symbol Parameter Test Conditio Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µa VGS =0 60 V IDSS IGSS Zero Gate Voltage Drain Current (V GS =0) Gate-body Leakage Current (V DS =0) VDS =MaxRating V DS =MaxRatingx0.8 T c = 125 o C VGS = ± 20 V ± 100 na µa µa ON ( ) Symbol Parameter Test Conditio Min. Typ. Max. Unit V GS(th) Gate Threshold Voltage V DS =V GS I D =250µA V RDS(on) Static Drain-source On Resistance VGS = 10V ID =19A V GS = 10V I D =19A T c =100 o C I D(on) On State Drain Current V DS >I D(on) xr DS(on)max VGS =10V Ω Ω 38 A DYNAMIC Symbol Parameter Test Conditio Min. Typ. Max. Unit g fs ( ) Forward Traconductance V DS >I D(on) xr DS(on)max I D =19A S C iss Coss Crss Input Capacitance Output Capacitance Reverse Trafer Capacitance V DS =25V f=1mhz V GS = pf pf pf 2/11

3 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditio Min. Typ. Max. Unit t d(on) tr Turn-on Time Rise Time V DD =30V I D =19A RG=50 Ω VGS =10V (see test circuit, figure 3) (di/dt)on Turn-on Current Slope VDD =48V ID=38A R G =50 Ω V GS =10V (see test circuit, figure 5) Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD =40V I D =38A V GS =10V A/µs 80 nc nc nc SWITCHING OFF Symbol Parameter Test Conditio Min. Typ. Max. Unit t r(voff) tf t c Off-voltage Rise Time Fall Time Cross-over Time V DD =48V I D =38A RG=50 Ω VGS =10V (see test circuit, figure 5) SOURCE DRAIN DIODE Symbol Parameter Test Conditio Min. Typ. Max. Unit I SD ISDM( ) Source-drain Current Source-drain Current (pulsed) VSD ( ) Forward On Voltage ISD =38A VGS =0 1.5 V t rr Reverse Recovery I SD = 38 A di/dt = 100 A/µs 85 Time VDD =40V Tj = 150 o C Q rr I RRM Reverse Recovery Charge Reverse Recovery Current (see test circuit, figure 5) µc A ( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( ) Pulse width limited by safe operating area (1) ISD 20 A, di/dt 300 A/µs, VDD V(BR)DSS, Tj TJMAX A A Safe Operating Area Thermal Impedance 3/11

4 Derating Curve Output Characteristics Trafer Characteristics Traconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage 4/11

5 Capacitance Variatio Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time 5/11

6 Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform 6/11

7 Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And DIode Recovery Times 7/11

8 PSPICE PARAMETERS SUBCIRCUIT COMPONENTS Symbol Parameter Value Unit S1 (V14_16<0) (See Power Mosfet Model Subcircuit) ON S2 (V16_11<0) (See Power Mosfet Model Subcircuit) ON LD Drain Inductance 8 nh LG Gate Inductance 10 nh LS Source Inductance 10 nh RDRAIN Drain Resistance 1.9E -2 Ω RGATE Gate Resistance 1 Ω CGD Gate Drain Capacitance 3.92 nf CGS Gate Source Capacitance 1.9 nf ALFA Drift Coeficient 1E -3 V -1 RGN Negative Bias Resistance 10 KΩ DIODE DRAIN GATE (Depletion Capacitance) Symbol Parameter Value Unit CJO Zero Bias p-n Capacitance 2.6 nf VJ p-n Potential 0.1 V M p-n Grading Coefficient 0.6 DIODE DRAIN SOURCE Symbol Parameter Value Unit CJO Zero Bias p-n Capacitance 7.8 nf VJ p-n Potential 0.1 V M p-n Grading Coefficient 0.6 TT Trait Time 20 ec N MOSFET Symbol Parameter Value Unit L Channel Length 1 µmeter W Channel Width 1 µmeter LEVEL Model Index 3 TOX Oxide Thickness 1 Meter VTO Zero Bias Threshold Voltage 3.25 V U0 Surface Mobility 600 cm 2 /VS THETA Mobility Modulation V -1 Vmax Maximum Drift Velocity 0 Meter/sec KP Tra Conductance Coefficient 28 Amp/V 2 For Traient Simulation Applicate U.I.C. (Use Initial Condition) Option 8/11

9 PSPICE NETLIST OF THE SUBCIRCUIT.SUBCKT STP38N *VALUE OF THE PACKAGE INDUCTANCES LS n LG n LD n *RESISTANCE OF THE GATE POLYSILICON RG *EPY AND DRIFT RESISTANCES RD e-02 EDRI POLY(2) (13 14) (13 11) e-3 *CAPACITANCE GATE SOURCE CGS n *OPTIONAL FOR NEGATIVE GATE BIAS *S SWITCH *CGN n *RGN k *MILLER CAPACITANCE CGD n Power Mosfet Model Subcircuit * DEPLETION CAPACITANCE DGD DGD S SWITCH.MODEL DGD D +IS= +CJO=2.6n +Vj=.1 +M=.6.MODEL SWITCH VSWITCH +RON=1m +ROFF=1MEG +VON=0.1 * OUTPUT CAPACITANCE AND BODY DRAIN DIODE DBD DBD.MODEL DBD D +TT=20n +CJO=7.8n +VJ=.1 +M=.6 * MODEL OF THE MOSFET MMAIN MMAIN L=1u W=1u.MODEL MMAIN NMOS +LEVEL=3 +TOX=1 +VTO=3.25 +uo=600 +THETA= VMAX=5e7 +KP=28.ENDS 9/11

10 TO-220 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A C D D E F F F G G H L L L L L L DIA D1 F G C D A E L2 G1 H2 F1 Dia. L5 L7 L9 F2 L6 L4 P011C 10/11

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