STP55NE06 STP55NE06FP
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1 STP55NE06 STP55NE06FP N - CHNNEL ENHNCEMENT MODE SINGLE FETURE SIZE POWER MOSFET TYPE V DSS R DS(on) I D STP55NE06 STP55NE06FP 60 V 60 V <0.022Ω <0.022Ω TYPICL RDS(on) = Ω EXCEPTIONL dv/dt CPBILITY 100% VLNCHE TESTED LOW GTE CHRGE 100 o C HIGH dv/dt CPBILITY PPLICTION ORIENTED CHRCTERIZTION DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique Single Feature Size strip-based process. The resulting traistor shows extremely high packing deity for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility TO-220 TO-220FP INTERNL SCHEMTIC DIGRM PPLICTIONS DC MOTOR CONTROL DC-DC & DC-C CONVERTERS SYNCHRONOUS RECTIFICTION BSOLUTE MXIMUM RTINGS Symbol Parameter Value Unit STP55NE06 STP55NE06FP VDS Drain-source Voltage (VGS =0) 60 V VDGR Drain- gate Voltage (R GS =20kΩ) 60 V V GS Gate-source Voltage ± 20 V I D Drain Current (continuous) at T c =25 o C I D Drain Current (continuous) at T c =100 o C I DM ( ) Drain Current (pulsed) Ptot Total Dissipation at Tc =25 o C W Derating Factor W/ o C V ISO Iulation Withstand Voltage (DC) 2000 V dv/dt Peak Diode Recovery voltage slope 7 V/ Tstg Storage Temperature -65 to 175 T j Max. Operating Junction Temperature 175 ( ) Pulse width limited by safe operating area (1) ISD 55, di/dt 300 /µs, VDD V(BR)DSS, Tj TJMX January 1998 o C o C 1/9
2 THERML DT TO-220 TO-220FP Rthj-case Thermal Resistance Junction-case Max Rthj- amb Rthc-sink Tl Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose o C/W o C/W o C/W o C VLNCHE CHRCTERISTICS Symbol Parameter Max Value Unit I R valanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ <1%) 55 ES Single Pulse valanche Energy (starting Tj =25 o C, ID =IR, VDD =25V) 200 mj ELECTRICL CHRCTERISTICS (T case =25 o C unless otherwise specified) OFF V(BR)DSS Drain-source Breakdown Voltage I D =250µ V GS =0 60 V IDSS Zero Gate Voltage Drain Current (V GS =0) VDS =MaxRating V DS =MaxRating T c =125 o C 1 10 µ µ I GSS Gate-body Leakage Current (VDS =0) VGS = ± 20 V ± 100 n ON ( ) V GS(th) Gate Threshold Voltage V DS =V GS I D =250µ V R DS(on) Static Drain-source On Resistance V GS =10V I D = Ω ID(on) On State Drain Current VDS >ID(on) xrds(on)max V GS =10V 55 DYNMIC g fs ( ) Forward Traconductance V DS >I D(on) xr DS(on)max I D = S C iss Coss C rss Input Capacitance Output Capacitance Reverse Trafer Capacitance V DS =25V f=1mhz V GS = pf pf pf 2/9
3 ELECTRICL CHRCTERISTICS (continued) SWITCHING ON td(on) t r Qg Q gs Q gd Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =30V ID= 27.5 R G =4.7 W V GS =10V (see test circuit, figure 3) VDD =48V ID=55 VGS =10V nc nc nc SWITCHING OFF t r(voff) tf t c Off-voltage Rise Time Fall Time Cross-over Time V DD =48V I D =55 RG=4.7 Ω VGS =10V (see test circuit, figure 5) SOURCE DRIN DIODE ISD ISDM( ) Source-drain Current Source-drain Current (pulsed) V SD ( ) Forward On Voltage I SD =60 V GS =0 1.5 V trr Reverse Recovery ISD = 55 di/dt = 100 /µs 110 Time VDD =30V Tj=150 o C Q rr I RRM Reverse Recovery Charge Reverse Recovery Current (see test circuit, figure 5) µc ( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( ) Pulse width limited by safe operating area Safe Operating rea for TO-220 Safe Operating rea for TO-220FP 3/9
4 Thermal Impedance for TO-220 Thermal Impedance forto-220fp Output Characteristics Trafer Characteristics Traconductance Static Drain-source On Resistance 4/9
5 Gate Charge vs Gate-source Voltage Capacitance Variatio Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/9
6 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching nd Diode Recovery Times 6/9
7 TO-220 MECHNICL DT DIM. mm inch MIN. TYP. MX. MIN. TYP. MX C D D E F F F G G H L L L L L L DI D1 F G C D E L2 G1 H2 F1 Dia. L5 L7 L9 F2 L6 L4 P011C 7/9
8 TO-220FP MECHNICL DT DIM. mm inch MIN. TYP. MX. MIN. TYP. MX B D E F F F G G H L L L L L Ø H G B D E L6 L7 L3 F1 F F2 G L2 L4 8/9
9 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no respoability for the coequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No licee is granted by implication or otherwise underany patent or patent rights of SGS-THOMSON Microelectronics. Specificatio mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life supportdevices or systems withoutexpress written approval of SGS-THOMSON Microelectonics SGS-THOMSON Microelectronics - Printed in Italy - ll Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPNIES ustralia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.... 9/9
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2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type V DSS R DS(on) max I D 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V < 5 Ω(@10V) 0.20 A Low Q g Low threshold
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