STE53NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
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1 N - CHNNEL ENHNCEMENT MODE FST POWER MOS TRNSISTOR TYPE V DSS R DS(on) I D STE53N V < Ω 53 TYPICL RDS(on) = Ω HIGH CURRENT POWER MODULE VLNCHE RUGGED TECHNOLOGY VERY LRGE SO - LRGE PEK POWER CPBILITY ESY TO MOUNT SME CURRENT CPBILITY FOR THE TWO SOURCE TERMINLS EXTREMELY LOW Rth (Junction to case) VERY LOW INTERNL PRSITIC INDUCTNCE ISOLTED PCKGE UL RECOGNIZED ISOTOP PPLICTIONS SMPS & UPS MOTOR CONTROL WELDING EQUIPMENT OUTPUT STGE FOR PWM, ULTRSONIC CIRCUITS INTERNL SCHEMTIC DIGRM BSOLUTE MXIMUM RTINGS Symbol Parameter Value Unit V DS Drain-source Voltage (V GS =0) 500 V VDGR Drain- gate Voltage (RGS =20kΩ) 500 V VGS Gate-source Voltage ± 30 V ID Drain Current (continuous) at Tc =25 o C 53 I D Drain Current (continuous) at T c =100 o C 33 I DM ( ) Drain Current (pulsed) 212 Ptot Total Dissipation at Tc =25 o C 460 W Derating Factor 3.68 W/ o C T st g Storage Temperature -55 to 150 Tj Max. Operating Junction Temperature 150 o C o C VISO Iulation Withhstand Voltage (C-RMS) 2500 V ( ) Pulse width limited by safe operating area February /7
2 THERML DT R thj-case Rthc-h Thermal Resistance Junction-case Max Thermal Resistance Case-heatsink With Conductive Grease pplied Max o C/W o C/W VLNCHE CHRCTERISTICS Symbol Parameter Max Value Unit I R valanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ <1%) 26 E S Single Pulse valanche Energy (starting Tj =25 o C, ID =IR, VDD =50V) 1014 mj ELECTRICL CHRCTERISTICS (Tcase =25 o C unless otherwise specified) OFF V (BR)DSS Drain-source Breakdown Voltage I D =1m V GS = V I DSS I GSS Zero Gate Voltage Drain Current (VGS =0) Gate-body Leakage Current (VDS =0) V DS =MaxRating VDS =MaxRating Tc=125 o C V GS = ± 30 V ± 400 n µ µ ON ( ) VGS(th) Gate Threshold Voltage VDS =VGS ID =1m V RDS(on) Static Drain-source On Resistance VGS =10V ID= Ω ID(on) On State Drain Current VDS >ID(on) xrds(on)max V GS =10V 53 DYNMIC gfs ( ) Ciss C oss Crss Forward Traconductance Input Capacitance Output Capacitance Reverse Trafer Capacitance VDS >ID(on) X RDS(on)MX ID =27 25 S VDS =25V f=1mhz VGS = nf pf pf 2/7
3 ELECTRICL CHRCTERISTICS (continued) SWITCHING ON td(on) t r Qg Q gs Qgd Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =250V ID=27 RG=4.7 Ω VGS =10V (see test circuit, figure 1) VDD =400V ID=53 VGS = 10 V nc nc nc SWITCHING OFF t r(voff) tf t c Off-voltage Rise Time Fall Time Cross-over Time V DD =400V I D =53 R G =4.7 Ω V GS =10V (see test circuit, figure 3) SOURCE DRIN DIODE I SD I SDM ( ) Source-drain Current Source-drain Current (pulsed) VSD ( ) Forward On Voltage ISD =53 VGS =0 1.6 V trr Reverse Recovery I SD = 53 di/dt = 100 /µs 1000 Time VR =100V Tj=150 o C Qrr IRRM Reverse Recovery Charge Reverse Recovery Current (see test circuit, figure 3) µc ( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( ) Pulse width limited by safe operating area Safe Operating rea for Thermal Impedance 3/7
4 Output Characteristics Trafer Characteristics Traconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variatio 4/7
5 Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics Fig. 1: Switching Times Test Circuits For Resistive Load Fig. 2: Gate Charge test Circuit Fig. 3: Test Circuit For Inductive Load Switching nd Diode Recovery Times 5/7
6 ISOTOP MECHNICL DT DIM. mm inch MIN. TYP. MX. MIN. TYP. MX B C D E F G H J K L M N O G O B N H D E F J K L M C 6/7
7 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no respoability for the coequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No licee is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificatio mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics SGS-THOMSON Microelectronics - Printed in Italy - ll Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPNIES ustralia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.... 7/7
STP12NB30 STP12NB30FP
STP12NB30 STP12NB30FP N - CHNNEL ENHNCEMENT MODE PowerMESH MOSFET PRELIMINRY DT TYPE V DSS R DS(on) I D STP3NB60 STP12NB30FP 300 V 300 V
STH15NA50/FI STW15NA50
STH15N50/FI STW15N50 N - CHNNEL ENHNCEMENT MODE FST POWER MOS TRNSISTOR TYPE VDSS RDS(on) ID STH15N50 STH15N50FI STW15N50 500 V 500 V 500 V TYPICL R DS(on) = 0.33 Ω
STP55NE06 STP55NE06FP
STP55NE06 STP55NE06FP N - CHNNEL ENHNCEMENT MODE SINGLE FETURE SIZE POWER MOSFET TYPE V DSS R DS(on) I D STP55NE06 STP55NE06FP 60 V 60 V
STP30NE06L STP30NE06LFP
STP30NE06L STP30NE06LFP N - CHNNEL 60V - 0.035 Ω - 30 - TO-220/TO-220FP STripFET POWER MOSFET TYPE V DSS R DS(on) I D STP30NE06L STP30NE06LFP 60 V 60 V TYPICL RDS(on) = 0.035 Ω 100% VLNCHE TESTED LOW GTE
N - CHANNEL 600V Ω A TO-220/TO-220FP PowerMESH ΙΙ MOSFET 4.2 A 4.2 A. Symbol Parameter Value Unit
STP4NC60 STP4NC60FP N - CHNNEL 600V - 1.8 Ω - 4.2 TO-220/TO-220FP PowerMESH ΙΙ MOSFET PRELIMINRY DT TYPE VDSS RDS(on) ID STP4NC60 STP4NC60FP 600 V 600 V
STP75NE75 STP75NE75FP
STP75NE75 STP75NE75FP N - CHNNEL 75V - 0.01Ω - 75 TO-220/TO-220FP STripFET POWER MOSFET TYPE V DSS R DS(on) I D STP75NE75 STP75NE75FP 75 V 75 V < 0.013 Ω < 0.013 Ω TYPICL RDS(on) = 0.01 Ω EXCEPTIONL dv/dt
STP60NE06L-16 STP60NE06L-16FP
STP60NE06L-16 STP60NE06L-16FP N - CHNNEL 60V - 0.014Ω - 60 TO-220/TO-220FP STripFET POWER MOSFET TYPE V DSS R DS(on) I D STP60NE06L-16 STP60NE06L-16FP 60 V 60 V
N - CHANNEL 100V mω - 180A - ISOTOP POWER MOSFET
STE180N10 N - CHANNEL 100V - 5.5 mω - 180A - ISOTOP POWER MOSFET TYPE V DSS R DS(on) I D STE180N10 100 V < 7 mω 180 A TYPICAL RDS(on) = 5.5 mω 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE
PRELIMINARY DATA TYPE V DSS R DS(on) I D STW8NB V < 1.5 Ω 8 A
STW8NB100 N - CHNNEL 1000V - 1.2Ω - 8 - TO-247 PowerMESH MOSFET PRELIMINRY DT TYPE V DSS R DS(on) I D STW8NB100 1000 V < 1.5 Ω 8 TYPICL RDS(on) = 1.2 Ω EXTREMELY HIGH dv/dt CPBILITY ± 30V GTE TO SOURCE
IRF830. N - CHANNEL 500V Ω - 4.5A - TO-220 PowerMESH MOSFET
IRF830 N - CHANNEL 500V - 1.35Ω - 4.5A - TO-220 PowerMESH MOSFET TYPE V DSS R DS(on) I D IRF830 500 V < 1.5 Ω 4.5 A TYPICAL R DS(on) = 1.35 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY
3.4 A 2.1 A. Symbol Parameter Value Unit
BUZ80 BUZ80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR BUZ80 BUZ80FI TYPE VDSS R DS(on) ID 800 V 800 V < 4 Ω < 4 Ω 3.4 A 2.1 A TYPICAL R DS(on) = 3.3 Ω AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE
9.5 A 6.4 A. Symbol Parameter Value Unit
STW9NA60 STH9NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V DSS R DS(on) I D STW9NA60 STH9NA60FI 600 V 600 V
IRF830. N - CHANNEL 500V Ω - 4.5A - TO-220 PowerMESH MOSFET
N - CHANNEL 500V - 1.35Ω - 4.5A - TO-220 PowerMESH MOSFET TYPE V DSS R DS(on) I D 500 V < 1.5 Ω 4.5 A TYPICAL R DS(on) = 1.35 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC
STW9NB80. N-CHANNEL 800V Ω - 9.3A - TO-247 PowerMESH MOSFET
STW9NB80 N-CHANNEL 800V - 0.85Ω - 9.3A - TO-247 PowerMESH MOSFET TYPE V DSS R DS(on) I D STW9NB80 800 V < 1 Ω 9.3 A TYPICAL RDS(on) = 0.85 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE
IRFP460. N - CHANNEL 500V Ω - 20 A - TO-247 PowerMESH MOSFET
IRFP460 N - CHANNEL 500V - 0.22 Ω - 20 A - TO-247 PowerMESH MOSFET TYPE V DSS R DS(on) I D IRFP460 500 V < 0.27 Ω 20 A TYPICAL RDS(on) = 0.22 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY
N - CHANNEL 800V - 3Ω - 4A - TO-220/TO-220FP PowerMESH MOSFET 4 A 4 A. Symbol Parameter Value Unit
STP4NB80 STP4NB80FP N - CHANNEL 800V - 3Ω - 4A - TO-220/TO-220FP PowerMESH MOSFET TYPE V DSS R DS(on) I D STP4NB80 STP4NB80FP 800 V 800 V 3.3 Ω 3.3 Ω 4 A 4 A TYPICAL R DS(on) = 3 Ω EXTREMELY HIGH dv/dt
STW20NB50. N - CHANNEL 500V Ω - 20A - TO-247 PowerMESH MOSFET
N - CHANNEL 500V - 0.22Ω - 20A - TO-247 PowerMESH MOSFET TYPE V DSS R DS(on) I D 500 V < 0.25 Ω 20 A TYPICAL RDS(on) = 0.22 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE
Obsolete Product(s) - Obsolete Product(s)
STP80NE03L-06 N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZE " POWER MOSFET TYPE V DSS R DS(on) I D STP80NE03L-06 30 V < 0.006 Ω 80 A TYPICAL RDS(on) = 0.005 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE
50 A 27 A ABSOLUTE MAXIMUM RATINGS. Symbol Parameter Value Unit
IRFZ40 IRFZ40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS IRFZ40 IRFZ40FI TYPE V DSS R DS(on) I D 50 V 50 V < 0.028 Ω < 0.028 Ω 50 A 27 A TYPICAL RDS(on) = 0.022 Ω AVALANCHE RUGGED TECHNOLOGY
Obsolete Product(s) - Obsolete Product(s)
N-CHANNEL 100V - 0.009 Ω - 140A MAX247 MESH OVERLAY POWER MOSFET STY140NS10 100V
VNP35N07FI VNB35N07/VNV35N07
VNP35N07FI VNB35N07/VNV35N07 OMNIFET : FULLY UTOPROTECTED POWER MOSFET TYPE Vclamp RDS(on) Ilim VNP35N07FI VNB35N07 VNV35N07 70 V 70 V 70 V 0.028 Ω 0.028 Ω 0.028 Ω 35 35 35 LINER CURRENT LIMITTION THERML
VNP28N04 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET
"OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE Vclamp RDS(on) Ilim VNP28N04 42 V 0.035 Ω 28 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM
IRF540 N-CHANNEL 100V Ω - 22A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET
N-CHANNEL 100V - 0.055 Ω - 22A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE V DSS R DS(on) I D IRF540 100 V
Obsolete Product(s) - Obsolete Product(s)
N-CHANNEL 30V - 0.016 Ω - 9A SO-8 LOW GATE CHARGE STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STS9NF3LL 30 V
STS5PF30L P-CHANNEL 30V Ω - 5A SO-8 STRIPFET POWER MOSFET
P-CHANNEL 30V - 0.070 Ω - 5A SO-8 STRIPFET POWER MOSFET TYPE V DSS R DS(on) I D STS5PF30L 30V
STS7NF60L N-CHANNEL 60V Ω - 7.5A SO-8 STripFET II POWER MOSFET
N-CHANNEL 60V - 0.017 Ω - 7.5A SO-8 STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STS7NF60L 60 V < 0.0195 Ω 7.5 A TYPICAL R DS (on) = 0.017 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY
STP3NB90 STP3NB90FP N-CHANNEL 900V - 4 Ω A TO-220/TO-220FP PowerMesh MOSFET
STP3NB90 STP3NB90FP N-CHANNEL 900V - 4 Ω - 3.5 A TO-220/TO-220FP PowerMesh MOSFET TYPE V DSS R DS(on) I D Pw STP3NB90 STP3NB90FP 900 V 900 V TYPICAL R DS (on) = 4 Ω
STP36NF06 STP36NF06FP
STP36NF06 STP36NF06FP N-CHANNEL 60V - 0.032 Ω - 30A TO-220/TO-220FP STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STP36NF06 STP36NF06FP 60 V 60 V TYPICAL R DS (on) = 0.032 Ω
IRFP460 N-CHANNEL 500V Ω A TO-247 PowerMesh II MOSFET
N-CHANNEL 500V - 0.22Ω - 18.4A TO-247 PowerMesh II MOSFET TYPE V DSS R DS(on) I D IRFP460 500V < 0.27Ω 18.4A TYPICAL R DS (on) = 0.22Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE
Obsolete Product(s) - Obsolete Product(s)
N-CHANNEL 200V - 0.062 Ω - 34A TO-247 PowerMESH MOSFET Table 1. General Features Figure 1. Package Type V DSS R DS(on) I D STW34NB20 200 V < 0.075 Ω 34 A FEATURES SUMMARY TYPICAL R DS(on) = 0.062 Ω EXTREMELY
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP38N06 60 V < 0.03 Ω 38 A (*) PRELIMINARY DATA TYPICAL RDS(on) = 0.026 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE
STE70NM60 N-CHANNEL 600V Ω - 70A ISOTOP Zener-Protected MDmesh Power MOSFET
N-CHANNEL 600V - 0.050Ω - 70A ISOTOP Zener-Protected MDmesh Power MOSFET TYPE V DSS R DS(on) I D STE70NM60 600V < 0.055Ω 70 A TYPICAL R DS (on) = 0.050Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD
STP5NK80Z - STP5NK80ZFP N-CHANNEL 800V - 1.9Ω - 4.3A TO-220/TO-220FP Zener-Protected SuperMESH Power MOSFET
N-CHANNEL 800V - 1.9Ω - 4.3A TO-220/TO-220FP Zener-Protected SuperMESH Power MOSFET TYPE V DSS R DS(on) I D Pw STP5NK80Z STP5NK80ZFP 800 V 800 V TYPICAL R DS (on) = 1.9 Ω
STW26NM60 N-CHANNEL 600V Ω - 30A TO-247 MDmesh MOSFET
N-CHANNEL 600V - 0.125Ω - 30A TO-247 MDmesh MOSFET Table 1: General Features Figure 1: Package TYPE V DSS R DS(on) I D STW26NM60 600 V < 0.135 Ω 30 A TYPICAL R DS (on) = 0.125 Ω HIGH dv/dt AND AVALANCHE
STW9NC80Z N-CHANNEL 800V Ω - 9.4A TO-247 Zener-Protected PowerMESH III MOSFET
N-CHANNEL 800V - 0.82Ω - 9.4A TO-247 Zener-Protected PowerMESH III MOSFET TYPE V DSS R DS(on) I D STW9NC80Z 800 V
Obsolete Product(s) - Obsolete Product(s)
STP60NE06-16 STP60NE06-16FP N-CHANNEL 60V - 0.013 Ω - 60A TO-220/TO-220FP "SINGLE FEATURE SIZE " POWER MOSFET Table 1. General Features Figure 1. Package Type V DSS R DS(on) I D STP60NE06-16 60 V < 0.016
VNH50N04 OMNIFET : FULLY AUTOPROTECTED POWER MOSFET
OMNIFET : FULLY AUTOPROTECTED POWER MOSFET TYPE Vclamp RDS(on) I lim VNH50N04 40 V 0.012 Ω 50 A TARGET DATA LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT
STW6NC90Z N-CHANNEL 900V - 2.1Ω - 5.2A TO-247 Zener-Protected PowerMESH III MOSFET
N-CHANNEL 900V - 2.1Ω - 5.2A TO-247 Zener-Protected PowerMESH III MOSFET TYPE V DSS R DS(on) I D STW6NC90Z 900 V < 2.5 Ω 5.2A TYPICAL R DS (on) = 2.1Ω EXTREMELY HIGH dv/dt CAPABILITY GATE-TO-SOURCE ZENER
STY60NK30Z N-CHANNEL 300V Ω - 60A Max247 Zener-Protected SuperMESH Power MOSFET
N-CHANNEL 300V - 0.033Ω - 60A Max247 Zener-Protected SuperMESH Power MOSFET TYPE V DSS R DS(on) I D Pw STY60NK30Z 300 V < 0.045 Ω 60 A 450 W TYPICAL R DS (on) = 0.033 Ω EXTREMELY HIGH dv/dt CAPABILITY
STD10NF10 N-CHANNEL 100V Ω - 13A IPAK/DPAK LOW GATE CHARGE STripFET II POWER MOSFET
N-CHANNEL 100V - 0.115 Ω - 13A IPAK/DPAK LOW GATE CHARGE STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STD10NF10 100 V
STW8NC90Z N-CHANNEL 900V Ω - 7.6A TO-247 Zener-Protected PowerMESH III MOSFET
N-CHANNEL 900V - 1.1 Ω - 7.6A TO-247 Zener-Protected PowerMESH III MOSFET TYPE V DSS R DS(on) I D STW8NC90Z 900 V < 1.38 Ω 7.6 A TYPICAL R DS (on) = 1.1 Ω EXTREMELY HIGH dv/dt CAPABILITY GATE- TO-SOURCE
-55 to 175 C T j ( ) Pulse width limited by safe operating area.
N-CHANNEL 60V - 0.020 Ω - 28A IPAK/DPAK STripFET II POWER MOSFET TYPE V DSS R DS(on) I D 60 V
n/a VNP7N04 7A POWER MOSFET TO-220 (RC)
DATA SHEET Bridge rectifier Diodes Order code Manufacturer code Description 47-0404 n/a VNP7N04 7A POWER MOSFET TO-220 (RC) Bridge rectifier Diodes The enclosed information is believed to be correct, Information
STP12NK30Z N-CHANNEL 300V Ω -9A-TO-220 Zener-Protected SuperMESH Power MOSFET
N-CHANNEL 300V - 0.36Ω -9A-TO-220 Zener-Protected SuperMESH Power MOSFET TYPE V DSS R DS(on) I D (1) Pw (1) STP12NK30Z 300 V < 0.4 Ω 9A 90W TYPICAL R DS (on) = 0.36 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED
Symbol Parameter Value Unit BTW 68 BTW 68 N BTW 68 BTW 68 N. Storage and operating junction temperature range - 40 to to + 125
(N) SCR FETURES HIGH SURGE CPBILITY HIGH ON-STTE CURRENT. HIGH STBILITY ND RELIBILITY Serie : INSULTED VOLTGE = 2500V (RMS) (UL RECOGNIZED : E81734) DESCRIPTION The (N) Family of Silicon Controlled Rectifiers
Symbol Parameter Value Unit BTW 68 BTW 68 N BTW 68 BTW 68 N. Storage and operating junction temperature range - 40 to to + 125
BTW 68 (N) SCR FETURES HIGH SURGE CPBILITY HIGH ON-STTE CURRENT. HIGH STBILITY ND RELIBILITY BTW 68 Serie : INSULTED VOLTGE = 2500V (RMS) (UL RECOGNIZED : E81734) DESCRIPTION The BTW 68 (N) Family of Silicon
Obsolete Product(s) - Obsolete Product(s)
N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET TYPE STW20NM50 550V < 0.25Ω 20 A TYPICAL R DS (on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND
STP10NK70ZFP STP10NK70Z
STP10NK70ZFP STP10NK70Z N-CHANNEL 700V - 0.75Ω - 8.6A - TO220-TO220FP Zener-Protected SuperMESH MOSFET General features Package Type V DSS R DS(on) I D Pw STP10NK70Z 700 V
STD5NM50 STD5NM50-1 N-CHANNEL 500V - 0.7Ω - 7.5A DPAK/IPAK MDmesh Power MOSFET
STD5NM50 STD5NM50-1 N-CHANNEL 500V - 0.7Ω - 7.5A DPAK/IPAK MDmesh Power MOSFET TYPE V DSS R DS(on) I D STD5NM50 STD5NM50-1 500V 500V
Symbol Parameter Value Unit BTW 66 BTW 67 BTW 66 BTW 67 BTW 66 BTW 67 BTW 66 BTW 67
SCR FETURES HIGH SURGE CPBILITY HIGH ON-STTE CURRENT. HIGH STBILITY ND RELIBILITY ISOLTED PCKGE : INSULTED VOLTGE = 2500V (RMS) (UL RECOGNIZED : E81734) DESCRIPTION The and Family Silicon Controlled Rectifiers
STS7PF30L P-CHANNEL 30V Ω - 7ASO-8 STripFET II POWER MOSFET
TYPE V DSS R DS(on) I D STS7PF30L P-CHANNEL 30V - 0.016Ω - 7ASO-8 STripFET II POWER MOSFET PRELIMINARY DATA STS7PF30L 30 V < 0.021 Ω 7A TYPICAL R DS (on) = 0.016Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE
STD7NS20 STD7NS20-1 N-CHANNEL 200V Ω - 7A DPAK / IPAK MESH OVERLAY MOSFET
TYPE V DSS R DS(on) I D STD7NS20 STD7NS20-1 N-CHANNEL 200V - 0.35Ω - 7A DPAK / IPAK MESH OVERLAY MOSFET PRELIMINARY DATA STD7NS20 STD7NS20-1 200 V 200 V < 0.40 Ω < 0.40 Ω 7A 7A TYPICAL R DS (on) = 0.35
115 W 35 W 115 W 115 W 156 W SALES TYPE MARKING PACKAGE PACKAGING STP9NK70Z P9NK70Z TO-220 TUBE STP9NK70ZFP P9NK70ZFP TO-220FP TUBE
STP9NK70Z - STP9NK70ZFP STB9NK70Z - STB9NK70Z-1 - STW9NK70Z N-CHANNEL 700V - 1Ω - 7.5A TO-220/FP/D 2 PAK/I 2 PAK/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE V DSS R DS(on) I D Pw STP9NK70Z STP9NK70ZFP
STP9NK50Z - STP9NK50ZFP STB9NK50Z - STB9NK50Z-1 N-CHANNEL 500V Ω - 7.2A TO-220/FP/D 2 PAK/I 2 PAK Zener-Protected SuperMESH MOSFET
STP9NK50Z - STP9NK50ZFP STB9NK50Z - STB9NK50Z-1 N-CHANNEL 500V - 0.72Ω - 7.2A TO-220/FP/D 2 PAK/I 2 PAK Zener-Protected SuperMESH MOSFET TYPE V DSS R DS(on) I D Pw STP9NK50Z STP9NK50ZFP STB9NK50Z STB9NK50Z-1
STY60NM50 N-CHANNEL 500V Ω - 60A Max247 Zener-Protected MDmesh Power MOSFET
N-CHANNEL 500V - 0.045Ω - 60A Max247 Zener-Protected MDmesh Power MOSFET TYPE V DSS R DS(on) I D STY60NM50 500V < 0.05Ω 60 A TYPICAL R DS (on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD
STP7NK80Z - STP7NK80ZFP STB7NK80Z - STB7NK80Z-1 N-CHANNEL800V-1.5Ω - 5.2A TO-220/TO-220FP/I 2 PAK/D 2 PAK Zener-Protected SuperMESH Power MOSFET
STP7NK80Z - STP7NK80ZFP STB7NK80Z - STB7NK80Z-1 N-CHANNEL800V-1.5Ω - 5.2A TO-220/TO-220FP/I 2 PAK/D 2 PAK Zener-Protected SuperMESH Power MOSFET TYPE V DSS R DS(on) I D Pw STP7NK80Z STP7NK80ZFP STB7NK80Z
STP10NK60Z/FP, STB10NK60Z/-1 STW10NK60Z N-CHANNEL 600V-0.65Ω-10A TO-220/FP/D 2 PAK/I 2 PAK/TO-247 Zener-Protected SuperMESH Power MOSFET
STP10NK60Z/FP, STB10NK60Z/-1 STW10NK60Z N-CHANNEL 600V-0.65Ω-10A TO-220/FP/D 2 PAK/I 2 PAK/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE V DSS R DS(on) I D Pw STP10NK60Z STP10NK60ZFP STB10NK60Z STB10NK60Z-1
STD12NF06L N-CHANNEL 60V Ω - 12A IPAK/DPAK STripFET II POWER MOSFET
N-CHANNEL 60V - 0.08 Ω - 12A IPAK/DPAK STripFET II POWER MOSFET TYPE V DSS R DS(on) I D 60 V < 0.1 Ω 12 A TYPICAL R DS (on) = 0.08 Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE LOW THRESHOLD DRIVE THROUGH-HOLE
STF12PF06 P-CHANNEL 60V Ω - 12A TO-220/TO-220FP STripFET II POWER MOSFET
STP12PF06 STF12PF06 P-CHANNEL 60V - 0.18 Ω - 12A TO-220/TO-220FP STripFET II POWER MOSFET Table 1: General Features TYPE V DSS R DS(on) I D Figure 1:Package STP12PF06 STF12PF06 60 V 60 V TYPICAL R DS (on)
STP80NF10 STB80NF10 N-CHANNEL 100V Ω - 80A - TO-220/D 2 PAK LOW GATE CHARGE STripFET II MOSFET
STP80NF10 STB80NF10 N-CHANNEL 100V - 0.012Ω - 80A - TO-220/D 2 PAK LOW GATE CHARGE STripFET II MOSFET Table 1: General Features Figure 1: Package TYPE V DSS R DS(on) I D STB80NF10 STP80NF10 100 V 100 V
HEXFET MOSFET TECHNOLOGY
PD-90712C POWER MOSFET THRU-HOLE (TO-254) IRFM360 400V, N-CHNNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM360 0.20 Ω 23 HEXFET MOSFET technology is the key to International Rectifier
P-Channel MOSFET SI2369DS-HF (KI2369DS-HF) Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ±20 *1*2 *1*2 *1*2 *1*2
Features VDS (V) =-3V ID =-7.6A (VGS =±V) RDS(ON) < 9mΩ (VGS =-V) RDS(ON) < 34mΩ (VGS =-6V) RDS(ON) < 4mΩ (VGS =-4.5V).8 -. +. SOT-3-3 3.9 -. +..4 -. +..95 -. +..9 -. +. +. -..6.4.55 Unit: mm.5 -. +. -..68
SSP20N60S / SSF20N60S 600V N-Channel MOSFET
SSP20N60S / SSF20N60S 600V N-Channel MOSFET Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and
STD17NF03L N-CHANNEL 30V Ω - 17A - DPAK/IPAK STripFET POWER MOSFET
N-CHANNEL 30V - 0.038Ω - 17A - DPAK/IPAK STripFET POWER MOSFET TYPE V DSS R DS(on) I D 30V
STD20NF06L N-CHANNEL 60V Ω - 24A DPAK/IPAK STripFET II POWER MOSFET
Table 1: General Features N-CHANNEL 60V - 0.032 Ω - 24A DPAK/IPAK STripFET II POWER MOSFET Figure 1:Package TYPE V DSS R DS(on) I D -1 60 V 60 V TYPICAL R DS (on) = 0.032 Ω < 0.040 Ω < 0.040 Ω EXCEPTIONAL
L9307 L9309 DUAL HIGH CURRENT LOW SIDE DRIVER
L9307 L9309 DUL HIGH CURRENT LOW SIDE DRIVER HIGH OUTPUT CURRENT INPUT COMPRTOR WITH WIDE RNGE COMMON MODE OPERTION ND GROUND COMPTIBLE INPUTS INPUT COMPRTOR HYSTERESIS SHORT CIRCUIT PROTECTION WITH SO
STP55NF03L STB55NF03L STB55NF03L-1 N-CHANNEL 30V Ω - 55A TO-220/D 2 PAK/I 2 PAK STripFET II POWER MOSFET
STP55NF03L STB55NF03L STB55NF03L-1 N-CHANNEL 30V - 0.01 Ω - 55A TO-220/D 2 PAK/I 2 PAK STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STP55NF03L STB55NF03L STB55NF03L-1 30 V 30 V 30 V
VNP35N07 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET
"OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE Vclamp RDS(on) Ilim VNP35N07 70 V 0.028 Ω 35 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM
STB55NF06 STB55NF06-1 STP55NF06 STP55NF06FP
STB55NF06 STB55NF06-1 STP55NF06 STP55NF06FP N-CHANNEL 60V - 0.015 Ω - 50A TO-220/TO-220FP/I ² PAK/D²PAK STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STP55NF06 STB55NF06-1 STB55NF06 STP55NF06FP 60 V
STD16NF06. N-Channel 60V Ω - 16A - DPAK STripFET II Power MOSFET. General features. Description. Internal schematic diagram.
N-Channel 60V - 0.060Ω - 16A - DPAK STripFET II Power MOSFET General features Type V DSS R DS(on) I D STD16NF06 60V
SMD Type. P-Channel Enhancement MOSFET SI2333CDS (KI2333CDS) Features. Absolute Maximum Ratings Ta = 25
P-Channel Enhancement Features VDS (V) =-V ID =-5.A (VGS =-.5V) RDS(ON) < 5mΩ (VGS =-.5V) RDS(ON) < 5mΩ (VGS =-.5V) RDS(ON) < 59mΩ (VGS =-.8V). -. SOT-.95 -..9 -.. -..9 -.. -..55. Unit: mm. -. +.5 G S
SMD Type. N-Channel MOSFET SI2318CDS-HF (KI2318CDS-HF) Features. Absolute Maximum Ratings Ta = 25
N-Channel SI8CDS-HF (KI8CDS-HF) Features VDS (V) = V ID =.6 A (VGS = V) RDS(ON) < mω (VGS = V) RDS(ON) < mω (VGS =.V) Pb Free Package May be Available. The G Suffix Denotes a Pb Free Lead Finish D.8 -.
Obsolete Product(s) - Obsolete Product(s)
P-CHANNEL 20V - 0.065Ω - 5ASOT23-6L 2.5V-DRIVE STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STT5PF20V 20 V < 0.080 Ω (@4.5V)
N-channel 600 V, 0.56 Ω typ., 7.5 A MDmesh II Plus low Q g Power MOSFET in a TO-220FP package. Features. Description. AM15572v1
STF1N6M2 N-channel 6 V,.56 Ω typ., 7.5 A MDmesh II Plus low Q g Power MOSFET in a TO-22FP package Features Datasheet production data Order code V DS @ T Jmax R DS(on) max I D STF1N6M2 65 V.6 Ω 7.5 A TO-22FP
VNP49N04 OMNIFET : FULLY AUTOPROTECTED POWER MOSFET
OMNIFET : FULLY AUTOPROTECTED POWER MOSFET TYPE Vclamp RDS(on) Ilim VNP49N04 42 V 0.02 W 49 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM
STF8211. Dual N-Channel Enhancement Mode Field Effect Transistor
SamHop Microelectronics C orp. Green Product Dual N-Channel Enhancement Mode Field Effect Traistor STF8 Ver. PRODUCT SUMMRY VDSS ID RDS(ON) (mω) Max 3. @ VGS=4.V V 8. @ VGS=.V FETURES Super high dee cell
N-channel 75 V, Ω typ., 78 A STripFET DeepGATE Power MOSFET in a TO-220 package. Order codes Marking Package Packaging
Features N-channel 75 V, 0.0092 Ω typ., 78 A STripFET DeepGATE Power MOSFET in a TO-220 package Datasheet production data Type V DSS R DS(on) max I D TAB STP75N75F4 75 V < 0.011 Ω 78 A N-channel enhancement
STB20NM50 - STB20NM50-1 STP20NM50 - STP20NM50FP
General features STB20NM50 - STB20NM50-1 STP20NM50 - STP20NM50FP N-channel 500V - 0.20Ω - 20A - TO220/FP-D 2 PAK-I 2 PAK MDmesh Power MOSFET Type V DSS (@T Jmax ) R DS(on) STB20NM50 550V < 0.25Ω 20A STB20NM50-1
SMD Type. N-Channel MOSFET SI2366DS-HF (KI2366DS-HF) Features. Absolute Maximum Ratings Ta = 25
SOT-.9 -. +.. -. +. Unit: mm Features VDS (V) = V ID =.8 A (VGS = V) RDS(ON) < 6mΩ (VGS = V) RDS(ON) < mω (VGS =.V). -. +..9 -. +..9 -. +.. -. +.... -. +. Pb Free Package May be Available. The G Suffix
STS7PF30L P-CHANNEL 30V Ω - 7A - SO-8 STripFET II Power MOSFET General features Description Internal schematic diagram
P-CHANNEL 30V - 0.16Ω - 7A - SO-8 STripFET II Power MOSFET General features Type V DSS R DS(on) I D STS7PF30L 30V
STP60NF06 STP60NF06FP
STP60NF06 STP60NF06FP N-CHANNEL 60V - 0.014Ω - 60A TO-220/TO-220FP STripFET POWER MOSFET TYPE V DSS R DS(on) I D STP60NF06 STP60NF06FP 60 V 60 V < 0.016 Ω < 0.016 Ω 60A 60A TYPICAL R DS (on) = 0.014Ω EXCEPTIONAL
Symbol Parameter TSB20N60S TSP20N60S TSF20N60S Unit 20* 20* I D -Continuous (TC = 100 ) 12*
TSP20N60S,TSF20N60S, TSB20N60S 600V N-Channel MOSFET Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance
SUPER-SEMI SUPER-MOSFET. Super Junction Metal Oxide Semiconductor Field Effect Transistor. 600V Super Junction Power Transistor SS*20N60S. Rev. 1.
SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 600V Super Junction Power Transistor SS*20N60S Rev. 1.04 September, 2013 SSW20N60S/SSA20N60S 600V N-Channel MOSFET
SJ-FET TSD5N60S/TSU5N60S
September, 2013 SJ-FET TSD5N60S/TSU5N60S OSD5N60S/OSU5N60S 600V N-Channel MOSFET Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism
Symbol Parameter TSB10N60S TSP10N60S TSF10N60S Unit V DSS Drain-Source Voltage 600 V Drain Current -Continuous (TC = 25 ) 9.5*
TSP10N60S/TSF10N60S /TSB10N60S 600V N-Channel MOSFET Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance
HCD80R600R 800V N-Channel Super Junction MOSFET
HCD80R600R 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested Application Switch Mode Power
N-channel 500 V, Ω, 68 A, MDmesh II Power MOSFET in a TO-247 package. Features. Description. Table 1. Device summary
N-channel 500 V, 0.035 Ω, 68 A, MDmesh II Power MOSFET in a TO-247 package Features Datasheet - production data Order code V DSS (@T jmax ) R DS(on) max I D STW60NM50N 550 V
STS10N3LH5. N-channel 30 V, Ω, 10 A, SO-8 STripFET V Power MOSFET. Features. Application. Description
STSN3LH5 Nchannel 30 V, 0.019 Ω, A, SO8 STripFET V Power MOSFET Features Type V DSS R DS(on) max I D STSN3LH5 30 V 0.021 Ω A R DS(on) * Q g industry benchmark Extremely low onresistance R DS(on) Very low
SJ-FET. TSA20N60S, TSK20N60S 600V N-Channel MOSFET. September, 2013
TSA20N60S, TSK20N60S 600V N-Channel MOSFET Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and
Features. Description. Table 1: Device summary Order code Marking Package Packing STD30NF06LAG D30NF06L DPAK Tape and reel
Automotive-grade N-channel 60 V, 0.022 Ω typ., 35 A STripFET II Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on) max. ID STD30NF06LAG 60 V 0.028 Ω 35 A AEC-Q101
STM6960. Dual N-Channel Enhancement Mode Field Effect Transistor
Green Product SamHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Traistor PRODUCT SUMMRY VDSS ID RDS(ON) (mω) Max 55 @ VGS=V V 5.5 7 @ VGS=4.5V FETURES Super high dee cell design
KHB1D9N60I SEMICONDUCTOR TECHNICAL DATA. General Description IPAK(1)
SEMICONDUCTOR TECHNIC DT KHB1D9N6D/I N CHNNE MOS FIED EFFECT TRNSISTOR eneral Description KHB1D9N6D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance,
STD1NK60 - STD1NK60-1 STQ1HNK60R - STN1HNK60 N-CHANNEL 600V - 8Ω - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH MOSFET
STD1NK60 - STD1NK60-1 STQ1HNK60R - STN1HNK60 N-CHANNEL 600V - 8Ω - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH MOSFET Table 1: General Features TYPE V DSS R DS(on) I D Pw STD1NK60 STD1NK60-1 STQ1HNK60R STN1HNK60
STU/D10L01. N-Channel Enhancement Mode Field Effect Transistor
Green Product STU/DL SamHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMRY VDSS ID RDS(ON) (mω) Max V 3 @ VGS=V FETURES Super high dense cell design for low RDS(ON).
HCI70R500E 700V N-Channel Super Junction MOSFET
HCI70R500E 700V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Higher dv/dt ruggedness Application
Obsolete Product(s) - Obsolete Product(s)
STD2NM60 STD2NM60-1 N-CHANNEL 600V - 2.8Ω - 2A DPAK/IPAK Zener-Protected MDmesh Power MOSFET TYPE V DSS R DS(on) I D STD2NM60 STD2NM60-1 600V 600V TYPICAL R DS (on) = 2.8 Ω < 3.2 Ω < 3.2 Ω HIGH dv/dt AND
STH160N4LF6-2. N-channel 40 V, mω typ., 120 A, STripFET VI DeepGATE Power MOSFET in a H²PAK-2 package. Features. Applications.
N-channel 40 V, 0.0018 mω typ., 120 A, STripFET VI DeepGATE Power MOSFET in a H²PAK-2 package Features Datasheet - production data Order code V DS R DS(on) max I D P TOT TAB 40 V 0.0022 Ω 120 A 150 W 2
HCA80R250T 800V N-Channel Super Junction MOSFET
HCA80R250T 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
Prerelease Product(s) - Prerelease Product(s)
N-channel 1050 V, 0.110 Ω typ., 46 A MDmesh DK5 Power MOSFET in an ISOTOP package Figure 1: Internal schematic diagram Features Order code VDS Datasheet - production data RDS(on) max. ID PTOT STE60N105DK5
n Low RDS(on) n Avalanche Energy Ratings n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Surface Mount n Light Weight
PD - 9472 HEXFET POWER MOSFET SURFACE MOUNT (SMD-.5) IRL7NJ382 2V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRL7NJ382 2V.85 22A* Seventh Generation HEXFET power MOSFETs from International