P-Channel MOSFET SI2369DS-HF (KI2369DS-HF) Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ±20 *1*2 *1*2 *1*2 *1*2

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1 Features VDS (V) =-3V ID =-7.6A (VGS =±V) RDS(ON) < 9mΩ (VGS =-V) RDS(ON) < 34mΩ (VGS =-6V) RDS(ON) < 4mΩ (VGS =-4.5V) SOT Unit: mm Gate. Source 3. Drain Absolute Maximum Ratings Ta = 5 Parameter Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=5 ) Pulsed Drain Current (t=us) Power Dissipation VDS -3 VGS ± TC=5-7.6 TC=7-6. TA=5-5.4 TA=7-4.3 IDM -8 TC=5.5 TC=7.6 TA=5.5 TA=7.8 Thermal Resistance.Junction- to-ambient **3 t 5S RthJA Thermal Resistance.Junction- to-foot RthJC 5 Junction Temperature TJ 5 Junction Storage Temperature Range Tstg -55 to 5 Notes: *.. Surface mounted on " x " FR4 board. *.. t = 5 s. *3.. Maximum under steady state conditions is 66 C/W. ** ** ** ** ID PD V A W /W

2 Electrical Characteristics Ta = 5 Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-5μA, VGS=V -3 V VDS=-3V, VGS=V - Zero Gate Voltage Drain Current IDSS μa VDS=-3V, VGS=V, TJ=55-5 Gate-Body Leakage Current IGSS VDS=V, VGS=±V ± na Gate Threshold Voltage VGS(th) VDS=VGS, ID=-5μA V Static Drain-Source On-Resistance On State Drain Current VGS=-V, ID=-5.4A 9 VGS=-6V, ID=-5A 34 VGS=-4.5V, ID=-4.6A 4 ID(ON) VGS=-V, VDS -5V -5 A Forward Transconductance gfs VDS=-5V, ID=-5.4A 8 S Input Capacitance Ciss 95 Output Capacitance Coss VGS=V, VDS=-5V, f=mhz 5 Reverse Transfer Capacitance Crss 3 Gate Resistance Rg f=mhz Ω Total Gate Charge RDS(On) Qg VGS=-V, VDS=-5V, ID=-5.4A 36 Gate Source Charge Qgs VGS=-4.5V, VDS=-5V, ID=-5.4A 3.4 Gate Drain Charge Qgd 3.8 Turn-On DelayTime td(on) Turn-On Rise Time tr VGS=-V, VDS=-5V, RL=3.5 Ω,RGEN=Ω 8 Turn-Off DelayTime td(off) ID -4.3A 57 Turn-Off Fall Time tf Turn-On DelayTime td(on) 4 Turn-On Rise Time tr VGS=-4.5V, VDS=-5V, RL=3.5Ω,RGEN=Ω 4 Turn-Off DelayTime td(off) ID -4.3A 45 Turn-Off Fall Time tf Body Diode Reverse Recovery Time trr 3 Body Diode Reverse Recovery Charge Qrr 4 nc IF=-4.3A, di/dt=a/us,tj=5 Reverse Recovery Fall Time ta 8 ns Reverse Recovery Rise Time tb 7 Maximum Body-Diode Continuous Current IS TC=5 -. Pulse Diode Forward Current (t = μs) ISM -8 Diode Forward Voltage VSD IS=-4.3A,VGS=V -. V Marking * NOTES: *. Pulse test; pulse width 3 μs, duty cycle %. Marking H9F ** * * 7 mω pf nc ns A

3 5 V GS = V thru 5 V 4 3 V GS = 4.5 V V GS = 4 V.5 T C = 5 C V GS = 3 V.5 T C = 5 C T C = - 55 C.5.5 V DS - Drain-to-Source Voltage (V) Output Characteristics V GS - Gate-to-Source Voltage (V) Transfer Characteristics R DS(on) - On-Resistance (Ω) V GS = 4.5 V V GS = 6 V V GS C - Capacitance (pf) C iss C oss On-Resistance vs. Drain Current C rss V DS - Drain-to-Source Voltage (V) Capacitance I D = 5.4 A V DS = 8 V.5 I D = 5.4 A V GS = V, 6 V V GS - Gate-to-Source Voltage (V) V DS = 5 V V DS = 4 V R DS(on) - On-Resistance (Normalized).3..9 V GS = 4.5 V Q g - Total Gate Charge (nc) Gate Charge T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature 3

4 .8 I D = 5.4 A I S - Source Current (A) T J = 5 C T J = 5 C R DS(on) - On-Resistance (Ω).6.4. T J = 5 C T J = 5 C V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage I D = 5 µa.75 8 V GS(th) (V).5 Power (W) T A = 5 C T J - Temperature ( C) Threshold Voltage.. Time (s) Single Pulse Power (Junction-to-Ambient)... Limited by R DS(on) * T A = 5 C Single Pulse BVDSS Limited µs ms ms ms s, s DC. V DS - Drain-to-Source Voltage (V) * V GS > minimum V GS at which R DS(on) Safe Operating Area, Junction-to-Ambient 4

5 T C - Case Temperature ( C) Current Derating* Power (W).86.4 Power (W) T C - Case Temperature ( C) Power, Junction-to-Foot T A - Ambient Temperature ( C) Power, Junction-to-Ambient 5

6 Duty Cycle =.5 Normalized Effective Transient Thermal Impedance Single Pulse 4. Surface Mounted Square Wave Pulse Duration (s) Notes: P DM t t t. Duty Cycle, D = t. Per Unit Base = R thja = 66 C/W 3. T JM - T A = P DM Z thja (t) Normalized Thermal Transient Im pedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance. Duty Cycle = Single Pulse Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot 6

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