T C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V

Transcription

1 40V N-Channel Trench MOSFET June 205 BS = 40 V R DS(on) typ = 3.3mΩ = 30 A FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 30 nc (Typ.) Extended Safe Operating Area Lower R DS(ON) : 3.3 mω = Lower R DS(ON) : 3.6 mω =4.5V 00% Avalanche Tested TO Gate 2. Drain 3. Source Absolute Maximum Ratings T C =25 unless otherwise specified Symbol Parameter Value Units S Drain-Source Voltage 40 V Drain Current Continuous (T C = 25 ) 30 A Drain Current Continuous (T C = 00 ) 90 A M Drain Current Pulsed (Note ) 300 A Gate-Source Voltage ±20 V E AS Single Pulsed Avalanche Energy (Note 2) 050 mj E AR Repetitive Avalanche Energy (Note ).5 mj P D Power Dissipation (T C = 25 ) - Derate above 25 5 W 0.77 W/ T J, T STG Operating and Storage Temperature Range -55 to +75 T L Maximum lead temperature for soldering purposes, /8 from case for 5 seconds 300 Thermal Resistance Characteristics Symbol Parameter Typ. Max. Units R θjc Junction-to-Case --.3 R θcs Case-to-Sink /W R θja Junction-to-Ambient

2 Electrical Characteristics T J =25 C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics Gate Threshold Voltage =, = 250 μa V R DS(ON) Static Drain-Source On-Resistance Off Characteristics = 0 V, = 30 A mω = 4.5 V, = 20 A mω g FS Forward Transconductance = 5, = 30 A S BS Drain-Source Breakdown Voltage = 0 V, = 250 μa V SS = 32 V, = 0 V μa Zero Gate Voltage Drain Current = 32 V, T J = μa I GSS Gate-Body Leakage Current = ±20 V, = 0 V ±00 na Dynamic Characteristics C iss Input Capacitance pf C oss Output Capacitance = 25 V, = 0 V, f =.0 MHz pf C rss Reverse Transfer Capacitance pf R g Gate Resistance = 0 V, = 0 V, f = MHz Ω Switching Characteristics t d(on) Turn-On Time ns t r Turn-On Rise Time = 20 V, = 30 A, ns t d(off) Turn-Off Delay Time R G = 6 Ω ns t f Turn-Off Fall Time ns Q g Total Gate Charge nc Q gs Gate-Source Charge = 32 V, = 30 A, = 0 V nc Q gd Gate-Drain Charge nc Source-Drain Diode Maximum Ratings and Characteristics I S Continuous Source-Drain Diode Forward Current I SM Pulsed Source-Drain Diode Forward Current A V SD Source-Drain Diode Forward Voltage I S = 30 A, = 0 V V trr Reverse Recovery Time I S = 30 A, = 0 V ns Qrr Reverse Recovery Charge di F /dt = 00 A/μs nc Notes :. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=mH, I AS =23A, =30V, R G =25Ω, Starting T J =25 C

3 Typical Characteristics 0 2 Top : 0 V 8 V 7 V 6 V 5 V 4 V Bottom : 3.5 V o C 25 o C us Pulse Test 2. T C = 25 o C 0 0 0, Drain-Source Voltage [V] Figure. On Region Characteristics. = 5V us Pulse Test , Gate-Source Voltage [V] Figure 2. Transfer Characteristics 6.0 R DS(ON) [mω], Drain-Source On-Resistance = 4.5V = 3.0 Note : T J = 25 o C Figure 3. On Resistance Variation vs Drain Current and Gate Voltage R, Reverse Drain Current [A] o C 25 o C. = 0V us Pulse Test V SD, Source-Drain Voltage [V] Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Capacitances [pf] C iss C oss C rss , Drain-Source Voltage [V] C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd * Note ;. = 0 V 2. f = MHz Figure 5. Capacitance Characteristics, Gate-Source Voltage [V] = 32V = 30A Q G, Total Gate Charge [nc] Figure 6. Gate Charge Characteristics

4 Typical Characteristics (continued) BS, (Normalized) Drain-Source Breakdown Voltage T J, Junction Temperature [ o C] Note :. = 0 V 2. = 250µA R DS(ON), (Normalized) Drain-Source On-Resistance T J, Junction Temperature [ o C] Note :. = 0 V 2. = 30 A Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature Operation in This Area is Limited by R DS(on). T C = 25 o C 2. T J = 75 o C 3. Single Pulse , Drain-Source Voltage [V] Figure 9. Maximum Safe Operating Area DC 0 ms ms 00 µs T C, Case Temperature [ o C] Figure 0. Maximum Drain Current vs Case Temperature 0 0 Z θjc (t), Thermal Response 0 - D= single pulse. Z θjc (t) =.3 o C/W Max. 2. Duty Factor, D=t /t 2 3. T JM - T C = P DM * Z θjc (t) P DM t t t, Square Wave Pulse Duration [sec] Figure. Transient Thermal Response Curve

5 2V 200nF 50KΩ 300nF Fig 2. Gate Charge Test Circuit & Waveform Same Type as Q g Q gs Q gd 3mA Charge Fig 3. Resistive Switching Test Circuit & Waveforms R L 90% R G ( 0.5 rated ) V in 0% t d(on) t r t d(off) tf t on t off Fig 4. Unclamped Inductive Switching Test Circuit & Waveforms L E AS = ---- L L I 2 2 AS BS BS -- BS I AS R G (t) (t) t p Time

6 Fig 5. Peak Diode Recovery dv/dt Test Circuit & Waveforms + _ I S L Driver R G Same Type as dv/dt controlled by RG I S controlled by pulse period ( Driver ) D = Gate Pulse Width Gate Pulse Period I S ( ) I FM, Body Diode Forward Current di/dt I RM ( ) Body Diode Reverse Current Body Diode Recovery dv/dt V f Body Diode Forward Voltage Drop

7 Package Dimension TO ±0.20 φ3.60± ± ± ± ± ± ± ± ± ± ± ± typ 2.54typ 0.80± ±0.20