HCD80R1K4E 800V N-Channel Super Junction MOSFET
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1 HCD80R1K4E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Motor Control & LED Lighting Power DC-DC Converters Key Parameters Parameter Value Unit j,max 850 V 4 A R DS(on), max 1.4 Ω Qg, Typ 6.5 nc Package & Internal Circuit D-PAK March 2017 Absolute Maximum Ratings T J =25 unless otherwise specified Symbol Parameter Value Units S Drain-Source Voltage 800 V Gate-Source Voltage ±30 V Drain Current Continuous (T C = 25 ) 4.0 A Drain Current Continuous (T C = 100 ) 2.5 A M Drain Current Pulsed (Note 1) 12 A E AS Single Pulsed Avalanche Energy (Note 2) 140 mj dv/dt MOSFET dv/dt ruggedness, =0 640V 50 V/ns dv/dt Reverse diode dv/dt, =0 640V, S 4 V/ns P D Power Dissipation (T C = 25 ) 37 W T J, T STG Operating and Storage Temperature Range -55 to +150 T L Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds 300 Thermal Resistance Characteristics Symbol Parameter Typ. Max. Units R θjc Junction-to-Case R θja Junction-to-Ambient (minimum pad of 2 oz copper) /W R θja Junction-to-Ambient (* 1 in 2 pad of 2 oz copper) -- 50
2 Electrical Characteristics T J =25 C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics Gate Threshold Voltage =, = 250 μa V R DS(ON) Off Characteristics BS Drain-Source Breakdown Voltage = 0 V, = 250 μa V SS Static Drain-Source On-Resistance Zero Gate Voltage Drain Current = 800 V, = 0 V μa = 800 V, T J = μa I GSS Gate-Body Leakage Current = ±30 V, = 0 V ±100 na Dynamic Characteristics = 10 V, = 2.0 A Ω C iss Input Capacitance pf C oss Output Capacitance = 100 V, = 0 V, f = 1.0 MHz pf C rss Reverse Transfer Capacitance pf Switching Characteristics t d(on) Turn-On Time ns t = 400 V, = 4 A, r Turn-On Rise Time ns R G = 25 Ω t d(off) Turn-Off Delay Time ns t f Turn-Off Fall Time ns Q g Total Gate Charge = 640 V, = 4 A nc Q gs Gate-Source Charge = 10 V nc Q gd Gate-Drain Charge nc Source-Drain Diode Maximum Ratings and Characteristics I S Continuous Source-Drain Diode Forward Current I SM Pulsed Source-Drain Diode Forward Current V SD Source-Drain Diode Forward Voltage I S = 4 A, = 0 V V trr Reverse Recovery Time I S = 4 A, = 0 V ns Qrr Reverse Recovery Charge di F /dt = 100 A/μs μc Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. I AS =1.8A, =50V, R G =25Ω, Starting T J =25 C 3. Pulse Test : Pulse Width 300μs, Duty Cycle 2% A
3 Typical Characteristics Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 10 4 C iss = C gs + C gd (C ds = shorted) 12 Capacitances [pf] C oss = C ds + C gd C rss = C gd * Note ; 1. = 0 V 2. f = 1 MHz , Drain-Source Voltage [V] C iss C oss C rss, Gate-Source Voltage [V] = 640V = 4A Q G, Total Gate Charge [nc] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
4 Typical Characteristics (continued) BS, (Normalized) Drain-Source Breakdown Voltage, Drain Current [A] Figure 7. Breakdown Voltage Variation vs Temperature Operation in This Area is Limited by R DS(on) T J, Junction Temperature [ o C] Notes : 1. T C = 25 o C 2. T J(Max) = 150 o C 3. Single Pulse , Drain-Source Voltage [V] Note : 1. = 0 V 2. = 250µA 10 µs 100 µs 1 ms 10 ms 100 ms DC Figure 9. Maximum Safe Operating Area R DS(ON), (Normalized) Drain-Source On-Resistance, Drain Current [A] T J, Junction Temperature [ o C] Figure 8. On-Resistance Variation vs Temperature T C, Case Temperature [ o C] Note : 1. = 10 V 2. = 2 A Figure 10. Maximum Drain Current vs Case Temperature 10 1 Z θ JC (t), Thermal Response D= single pulse Notes : 1. Z θ JC (t) = 3.4 o C/W Max. 2. Duty Factor, D=t 1 /t 2 3. T JM - T C = P DM * Z θ JC (t) P DM t 1 t t 1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve
5 12V 200nF 3mA 50KΩ 300nF Fig 12. Gate Charge Test Circuit & Waveform Same Type as Fig 13. Resistive Switching Test Circuit & Waveforms R L Q gs 90% Q g Q gd Charge R G ( 0.5 rated ) V in 10% t d(on) t r t d(off) tf t on t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms L E AS = L L I 2 2 AS BS BS -- BS I AS R G (t) (t) t p Time
6 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms R G I S Driver + _ Same Type as L dv/dt controlled by RG I S controlled by pulse period ( Driver ) D = Gate Pulse Width Gate Pulse Period I FM, Body Diode Forward Current I S ( ) di/dt I RM Body Diode Reverse Current ( ) Body Diode Recovery dv/dt V f Body Diode Forward Voltage Drop
7 Package Dimension D-PAK (TO-252L)
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UNISONIC TECHNOLOGIES CO., LTD 6A, 6V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N6 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed,
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UNISONIC TECHNOLOGIES CO., LTD 15A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC is an N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS technology.
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FQPF7N60 FQPF7N60 600V N-Channel MOSFET April 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe,
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UNISONIC TECHNOLOGIES CO., LTD 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching
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6N9 UNISONIC TECHNOLOGIES CO., LTD 6.2A, 9V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N9 is a N-channel enhancement mode power MOSFET using UTC s advanced technology to provide costumers with planar
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UNISONIC TECHNOLOGIES CO., LTD 10A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC uses UTC s advanced proprietary, planar stripe, DMOS technology to provide excellent R DS(ON), low gate charge and operation
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