HFI50N06A / HFW50N06A 60V N-Channel MOSFET
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1 HFI50N06A / HFW50N06A 60V N-Channel MOSFET Features Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant Key Parameters Oct 2016 Parameter Value Unit BS 60 V I D 50 A R DS(on), Typ 18 Qg,Typ 27 nc HFI50N06A TO-262 HFW50N06A TO-263 Symbol D G D S G S Absolute Maximum Ratings T C =25 unless otherwise specified Symbol Parameter Value Unit S Drain-Source Voltage 60 V I D Drain Current Continuous (T C = 100 ) 30.4 A Drain Current Continuous (T C = 25 ) 50.0 A I DM Drain Current Pulsed (Note 1) 200 A V GS Gate-Source Voltage 25 V E AS Single Pulsed Avalanche Energy (Note 2) 490 mj I AR Avalanche Current (Note 1) 50 A E AR Repetitive Avalanche Energy (Note 1) 12 mj P D Power Dissipation (T C = 25 ) 120 W Power Dissipation (T A = 25 )* 3.13 W - Derate above W/ T J, T STG Operating and Storage Temperature Range -55 to +175 T L Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds 300 Thermal Resistance Characteristics Symbol Parameter Value Unit R JC Junction-to-Case, Max /W R JA Junction-to-Ambient (minimum pad of 2 oz copper), Max /W R JA Junction-to-Ambient (* 1 in 2 pad of 2 oz copper), Max. 40 /W
2 Electrical Characteristics T J =25 unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Unit On Characteristics V GS Gate Threshold Voltage = V GS, I D = V R DS(ON) Static Drain-Source On-Resistance V GS = 10 V, I D = 25 A m g FS Forward Transconductance = 25 V I D = 25 A S Off Characteristics BS Drain-Source Breakdown Voltage V GS = 0 V, I D = V I DSS Zero Gate Voltage Drain Current = 60 V, V GS = 0 V = 48 V, T C = I GSS Gate-Body Leakage Current V GS = 25 V, = 0 V na Dynamic Characteristics C iss Input Capacitance pf C oss Output Capacitance = 25 V, V GS = 0 V, f = 1.0 MHz pf C rss Reverse Transfer Capacitance pf Switching Characteristics t d(on) Turn-On Time ns t r Turn-On Rise Time = 30 V, I D = 25 A, R G = ns t d(off) Turn-Off Delay Time ns (Note 4,5) t f Turn-Off Fall Time ns Q g Total Gate Charge = 48 V, I D = 25 A, nc Q gs Gate-Source Charge V GS = 10 V nc Q gd Gate-Drain Charge (Note 4,5) nc Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current I SM Maximum Pulsed Drain-Source Diode Forward Current A V SD Drain-Source Diode Forward Voltage V GS = 0 V, I S = 50 A V trr Reverse Recovery Time V GS = 0 V, I S = 50 A ns Qrr Reverse Recovery Charge di F /dt = 100 A/ Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=230 H, I AS =50A, =25V, R G =25, Starting T J =25 C 3. I SD DD DSS, Starting T J =25 C 4. Pulse Test : Pulse Width 5. Essentially Independent of Operating Temperature
3 Typical Characteristics Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
4 Typical Characteristics (continued) Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature Z JC (t), Thermal Response D= single pulse P DM * Notes : 1. Z JC (t) = 1.24 o C/W Max. 2. Duty Factor, D=t 1 /t 2 3. T JM - T C = P DM * Z JC (t) t 1 t t 1, Square Wave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve
5 12V 200nF 3mA V GS 300nF Fig 12. Gate Charge Test Circuit & Waveform Same Type as DUT DUT V GS 10V Q gs Q g Q gd Charge Fig 13. Resistive Switching Test Circuit & Waveforms R L 90% R G ( 0.5 rated ) 10V DUT V in 10% t d(on) t r t d(off) tf t on t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms L E AS = L L I 2 2 AS BS BS -- I D BS I AS R G I D (t) 10V DUT (t) t p Time
6 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + I S _ L Driver R G Same Type as DUT V GS dv/dt controlled by RG I S controlled by pulse period V GS ( Driver ) Gate Pulse Width D = Gate Pulse Period 10V I S ( DUT ) I FM, Body Diode Forward Current di/dt I RM ( DUT ) Body Diode Reverse Current Body Diode Recovery dv/dt V f Body Diode Forward Voltage Drop
7 Package Dimension
8 Package Dimension
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N-channel MOSFET Features High ruggedness R DS(ON) (Max 2.2 Ω)@V GS =0V Gate Charge (Typ 30nC) Improved dv/dt Capability 00% Avalanche Tested 2 3 TO-220F 2 3 TO-220 BS : 600V I D : 4.0A R DS(ON) : 2.2ohm
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UNISONIC TECHNOLOGIES CO., LTD UTT50P04-40V, -50A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT50P04 is a P-channel power MOSFET using UTC s advanced technology to provide the customers with high switching
More informationElectrical Characteristics T C = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BS Drain-Source Bre
FQD8P10TM-F085 100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor s proprietary, planar stripe, DMOS technology.
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250V P-Channel MOSFET April 2000 QFET TM General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.
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UNISONIC TECHNOLOGIES CO., LTD 10A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching
More informationUNISONIC TECHNOLOGIES CO., LTD 5N60
UNISONIC TECHNOLOGIES CO., LTD 5N60 5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time,
More informationSMK0460IS Advanced N-Ch Power MOSFET
Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source breakdown voltage: BV DSS =600V (Min.) Low gate charge: Q g =12nC (Typ.) Low drain-source On resistance: R DS(on) =2.1Ω
More informationGP2M005A050CG GP2M005A050PG
Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance N-channel MOSFET BS R DS(on) 5V.5A < 1.5W D-PAK I-PAK
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UNISONIC TECHNOLOGIES CO., LTD 15A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N60 is an N-channel mode power MOSFET using UTC s advanced technology to provide costumers with planar stripe and DMOS
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UNISONIC TECHNOLOGIES CO., LTD 12A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTC s proprietary,
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UNISONIC TECHNOLOGIES CO., LTD 13A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize
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FQPF6N60 FQPF6N60 600V N-Channel MOSFET April 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe,
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100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology
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UNISONIC TECHNOLOGIES CO., LTD 6N65K-MTQ 6A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N65K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time,
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UNISONIC TECHNOLOGIES CO., LTD 13NM60 13A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 13NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast
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FQA24N60 FQA24N60 600V N-Channel MOSFET April 2000 QFET TM General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe,
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100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced
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