MDF7N60 N-Channel MOSFET 600V, 7 A, 1.1Ω
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- Basil Powers
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1 General Description MDF7N is suitable device for SMPS, high Speed switching and general purpose applications. MDF7N N-Channel MOSFET V, 7 A,.Ω Features = V = = V R = V Applications Power Supply PFC High Current, High Speed Switching D G S Absolute Maximum Ratings (Ta = 5 o C) Characteristics Symbol Rating Unit Drain-Source Voltage S V Gate-Source Voltage S ±3 V Continuous Drain Current ( ) T C=5 o C 7. A T C= o C. A Pulsed Drain Current () M A Power Dissipation Repetitive Avalanche Energy E AR () T C=5 o C W P D Derate above 5 o C.33 W/ o C Peak Diode Recovery dv/dt (3) Dv/dt.5 V/ns Single Pulse Avalanche Energy () E AS mj Junction and Storage Range T J, T stg -55~5 Id limited by maximum junction temperature. o C Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient () R θja.5 Thermal Resistance, Junction-to-Case () R θjc 3. o C/W Aug 9. Version.
2 Ordering Information Part Number Temp. Range Package Packing RoHS Status MDF7N -55~5 o C TO-F Tube Halogen Free Electrical Characteristics (Ta =5 o C) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BS = 5µA, = V - - Gate Threshold Voltage (th) =, = 5µA Drain Cut-Off Current SS = V, = V - - µa Gate Leakage Current I GSS = ±3V, = V - - na Drain-Source ON Resistance R DS(ON) = V, = 3.5A.. Ω Forward Transconductance g fs = 3V, = 3.5A S Dynamic Characteristics Total Gate Charge Q g Gate-Source Charge Q gs = V, = 7.A, = V (3) Gate-Drain Charge Q gd Input Capacitance C iss - 75 Reverse Transfer Capacitance C rss = 5V, = V, f =.MHz - 5 Output Capacitance C oss - 95 Turn-On Delay Time t d(on) - Rise Time t r = V, = 3V, = 7.A, - 3 Turn-Off Delay Time t d(off) R G = 5Ω (3) - 35 Fall Time t f - 5 Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge I S - - A V SD I S = 7.A, = V -. V t rr - 35 ns I F = 7.A, dl/dt = A/µs (3) Q rr - 3. µc V nc pf ns Note :. Pulse width is based on R θjc & R θja and the maximum allowed junction temperature of 5 C.. Pulse test: pulse width 3us, duty cycle %, pulse width limited by junction temperature T J(MAX)=5 C. 3. I SD 7.A, di/dt A/us, V DD=5V, R g =5Ω, Starting T J=5 C. L=.mH, I AS=7.A, V DD=5V, R g =5Ω, Starting T J=5 C Aug 9. Version.
3 ,Drain Current [A] V gs =5.5V =.V =.5V =7.V =.V =.V =5.V 5 5,Drain-Source Voltage [V] Fig. On-Region Characteristics Notes. 5 μs Pulse Test. T C =5 R DS(ON) [Ω ] =.V 5 5,Drain Current [A] =V Fig. On-Resistance Variation with Drain Current and Gate Voltage.. R DS(ON), (Normalized) Drain-Source On-Resistance = V. = 5 A =V =.5V BS, (Normalized) Drain-Source Breakdown Voltage...9. = V. = 5 μa T J, Junction [ o C] Fig.3 On-Resistance Variation with T J, Junction [ o C] Fig. Breakdown Voltage Variation vs. * Notes ;. Vds=3V. = V. = 5 μa (A) R Reverse Drain Current [A] 5 5. [V] Fig.5 Transfer Characteristics V SD, Source-Drain Voltage [V] Fig. Body Diode Forward Voltage Variation with Source Current and Aug 9. Version. 3
4 , Gate-Source Voltage [V] Note : I = 7A D Q G, Total Gate Charge [nc] V 3V V Capacitance [pf] C oss C iss C rss, Drain-Source Voltage [V] C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd Notes ;. = V. f = MHz Fig.7 Gate Charge Characteristics Fig. Capacitance Characteristics Operation in This Area is Limited by R DS(on) µs µs ms, Drain Current [A] - Single Pulse T J =Max rated T C =5 DC s ms ms, Drain Current [A] - -, Drain-Source Voltage [V] T C, Case [ ] Fig.9 Maximum Safe Operating Area Fig. Maximum Drain Current vs. Case D=.5. single Pulse R thjc = 3. /W T C = 5 Z θ JC (t), Thermal Response single pulse Duty Factor, D=t /t PEAK T J = P DM * Z θ JC * R θ JC (t) + T C R Θ JC =3. /W t, Rectangular Pulse Duration [sec] Fig. Transient Thermal Response Curve Power (W) E-5 E- E-3.. Pulse Width (s) Fig. Single Pulse Maximum Power Dissipation Aug 9. Version.
5 Physical Dimensions 3 Leads, TO-F Dimensions are in millimeters unless otherwise specified Aug 9. Version. 5
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MSP120N08G 80V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s advanced technology. which provides high performance in on-state resistance, fast switching
More informationMOSFET = 0V, I D = 10V, 29A) = 500V, V GS = 0V) = 0V, T C = 400V, V GS = ±30V, V DS = 0V) = 2.5mA)
V A.65Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by
More informationUNISONIC TECHNOLOGIES CO., LTD UFC8N80K
UNISONIC TECHNOLOGIES CO., LTD UFC8N80K 8A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UFC8N80K provide excellent R DS(ON), low gate charge and operation with low gate voltages. This device is suitable
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UNISONIC TECHNOLOGIES CO., LTD 6A, 6V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N6 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed,
More informationMOSFET UNIT V DSS. Volts I D W/ C T J. Amps E AR = 0V, I D = 10V, I D = 88A) = 200V, V GS = 0V) = 160V, V GS = 0V, T C = ±30V, V DS = 0V) = 5mA)
APT2M11JLL 2V A.11Ω POWER MOS 7 R Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge, Qg MAXIMUM RATINGS MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement
More informationUNISONIC TECHNOLOGIES CO., LTD UT50N04
UNISONIC TECHNOLOGIES CO., LTD 50A, 40V N-CHANNEL POWER MOSFET DESCRIPTION The UTC is a N-channel enhancement MOSFET using UTC s advanced technology to provide the customers with perfect R DS(ON) and high
More informationSuper Junction MOSFET
APT77N6BC6 APT77N6SC6 6V 77A.4Ω CO LMOS Power Semiconductors Super Junction MOSFET Ultra Low R DS(ON) TO-247 Low Miller Capacitance D 3 PAK Ultra Low Gate Charge, Q g Avalanche Energy Rated Extreme dv
More informationFREDFET FAST RECOVERY BODY DIODE UNIT V DSS. Volts I D W/ C T J. Amps E AR = 0V, I D = 10V, I D = 88A) = 200V, V GS = 0V) = 160V, V GS = 0V, T C
APT2M11JFLL 2V A.11Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power
More informationUNISONIC TECHNOLOGIES CO., LTD UTT100N06
UNISONIC TECHNOLOGIES CO., LTD UTT1N6 1A, 6V N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT1N6 is an N-channel enhancement mode Power FET using UTC s advanced technology to provide customers
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 5A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge,
More informationMOSFET = 0V, I D = 16.5A) = 10V, I D = 200V, V GS = 0V) = 0V, T C = 160V, V GS = 0V) = ±30V, V DS. = 2.5mA)
APT82JLL 8V A.2Ω POWER MOS 7 R Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by
More informationDFP50N06. N-Channel MOSFET
N-Channel MOSFET Features R DS(on) (Max.22 )@ =1V Gate Charge (Typical 36nC) Improved dv/dt Capability High ruggedness 1% Avalanche Tested 1.Gate 2.Drain 3.Source BS = 6V R DS(ON) =.22 ohm = 5A General
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POWER MOS 7 R Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering
More informationUNISONIC TECHNOLOGIES CO., LTD 5N60
UNISONIC TECHNOLOGIES CO., LTD 5N60 5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time,
More informationUNISONIC TECHNOLOGIES CO., LTD UNA06R165M Advance POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD UNA06R165M Advance POWER MOSFET 60A, 60V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET DESCRIPTION The UTC UNA06R165M is an N-channel Power MOSFET, it uses UTC s advanced
More informationUNISONIC TECHNOLOGIES CO., LTD UTT52N15H
UNISONIC TECHNOLOGIES CO., LTD UTT52N15H POWER MOSFET 52A, 150V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET DESCRIPTION The UTC UTT52N15H is a N-channel, it uses UTC s advanced technology to provide
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