V DSS R DS(on) max (mω)

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1 PD IRF7325 HEXFET Power MOSFET Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile (<.8mm) Available in Tape & Reel Ω) I D V DSS R DS(on) max (mω) -2V 24@V GS = -4.5V ±7.8A 33@V GS = -2.5V ±6.2A 49@V GS = -.8V ±3.9A Description New P-Channel HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. S G S2 G Top View D D D2 D2 SO-8 Absolute Maximum Ratings Parameter Max. Units V DS Drain- Source Voltage -2 V I T A = 25 C Continuous Drain Current, V -4.5V -7.8 I T A = 70 C Continuous Drain Current, V -4.5V -6.2 A I DM Pulsed Drain Current -39 P A = 25 C Power Dissipation ƒ 2.0 P A = 70 C Power Dissipation ƒ.3 W Linear Derating Factor 6 mw/ C V GS Gate-to-Source Voltage ± 8.0 V T J, T STG Junction and Storage Temperature Range -55 to + 50 C Thermal Resistance Symbol Parameter Typ. Max. Units R θjl Junction-to-Drain Lead 20 R θja Junction-to-Ambient ƒ 62.5 C/W 2/5/0

2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage -2 V V GS = 0V, I D = -250µA V (BR)DSS/ T J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, I D = -ma R DS(on) Static Drain-to-Source On-Resistance 24 V GS = -4.5V, I D = -7.8A 33 mω V GS = -2.5V, I D = -6.2A 49 V GS = -.8V, I D = -3.9A V GS(th) Gate Threshold Voltage V V DS = V GS, I D = -250µA g fs Forward Transconductance 7 S V DS = -0V, I D = -7.8A I DSS Drain-to-Source Leakage Current -.0 µa V DS = -9.6V, V GS = 0V -25 V DS = -9.6V, V GS = 0V, T J = 70 C Gate-to-Source Forward Leakage -00 V GS = -8.0V I GSS na Gate-to-Source Reverse Leakage 00 V GS = 8.0V Q g Total Gate Charge I D = -7.8A Q gs Gate-to-Source Charge nc V DS = -6.0V Q gd Gate-to-Drain ("Miller") Charge V GS = -4.5V t d(on) Turn-On Delay Time 9.4 ns V DD = -6.0V t r Rise Time 9.8 I D = -.0A t d(off) Turn-Off Delay Time 240 R D = 6.0Ω t f Fall Time 80 V GS = -4.5V C iss Input Capacitance 2020 V GS = 0V C oss Output Capacitance 520 pf V DS = -0V C rss Reverse Transfer Capacitance 330 ƒ =.0MHz Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol -2.0 (Body Diode) showing the A I SM Pulsed Source Current integral reverse G -39 (Body Diode) p-n junction diode. V SD Diode Forward Voltage -.2 V T J = 25 C, I S = -2.0A, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = -2.0A Q rr Reverse Recovery Charge nc di/dt = -00A/µs D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400µs; duty cycle 2%. ƒ When mounted on inch square copper board. 2

3 -I D, Drain-to-Source Current (A) 00 0 VGS TOP -0V -7.0V -4.5V -3.0V -2.5V -.8V -.5V BOTTOM -.2V -.2V 20µs PULSE WIDTH T J = 25 C V DS, Drain-to-Source Voltage (V) -I D, Drain-to-Source Current (A) 00 0 VGS TOP -0V -7.0V -4.5V -3.0V -2.5V -.8V -.5V BOTTOM -.2V -.2V 20µs PULSE WIDTH T J = 50 C V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics -I D, Drain-to-Source Current (A) 00 0 T J = 50 C T J = 25 C V DS = -0V 20µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) 2.0 I D = -7.8A V GS = -4.5V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3

4 C, Capacitance(pF) IRF Ciss Coss Crss V GS = 0V, f = MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd -V GS, Gate-to-Source Voltage (V) I D = -7.8A V DS =-9.6V V DS =-6V V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED BY R DS(on) -I SD, Reverse Drain Current (A) 0 T J = 50 C T J = 25 C V GS = 0 V V SD,Source-to-Drain Voltage (V) -I I D, Drain Current (A) 00us 0 ms 0ms TA = 25 C TJ = 50 C Single Pulse V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4

5 8.0 V DS R D -I D, Drain Current (A) R G V GS V GS Pulse Width µs Duty Factor 0. % D.U.T. V DD Fig 0a. Switching Time Test Circuit T, Case Temperature ( C C) V GS t d(on) t r t d(off) t f 0% Fig 9. Maximum Drain Current Vs. Case Temperature 90% V DS Fig 0b. Switching Time Waveforms 00 Thermal Response (Z thja ) 0 D = SINGLE PULSE Notes: (THERMAL RESPONSE). Duty factor D = t / t 2 2. Peak T J = P DM x Z thja + TA t, Rectangular Pulse Duration (sec) PDM t t2 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5

6 R DS (on), Drain-to-Source On Resistance ( Ω) IRF7325 R DS(on), Drain-to -Source On Resistance ( Ω) V GS = -.8V V GS = -2.5V I D = -7.8A V GS = -4.5V V GS, Gate -to -Source Voltage (V) I D, Drain Current (A) Fig 2. Typical On-Resistance Vs. Gate Voltage Fig 3. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50KΩ Q G 2V.2µF.3µF Q GS Q GD D.U.T. + V DS - V G V GS -3mA Charge I G I D Current Sampling Resistors Fig 4a. Basic Gate Charge Waveform Fig 4b. Gate Charge Test Circuit 6

7 -V GS(th) Gate threshold Voltage (V) Power (W) IRF I D = -250µA T J, Temperature ( C ) Time (sec) Fig 5. Typical Vgs(th) Vs. Junction Temperature Fig 6. Typical Power Vs. Time 7

8 SO-8 Package Details A E 6 6X D e B H 0.25 [.00] A DIM INCHES MILLIMETERS MIN MAX MIN MAX A A b c D E e e H K L y BASIC.27 BASIC.025 BASIC BAS IC e A C y K x 45 8X b A 0.25 [.00] C A B 0.0 [.004] NOT ES:. DIMENSIONING & TOLERANCING PER ASME Y4.5M CONTROLLING DIMENSION: MILLIMETER 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES ]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -02AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.5 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.00]. 7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBST RATE. 8X L [.255] 3X.27 [.050] 8X c F OOT PRINT 8X 0.72 [.028] 8X.78 [.070] SO-8 Part Marking EXAMPLE: THIS IS AN IRF70 (MOSFET) INTERNATIONAL RECTIFIER LOGO YWW XXXX F70 DATE CODE (YWW) Y = LAST DIGIT OF THE YEAR WW = WEEK LOT CODE PART NUMBER 8

9 Tape and Reel TERMINAL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEED DIRECTION NOTES:. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOW N IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-48 & EIA (2.992) MAX. NOTES :. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-48 & EIA (.566 ) 2.40 (.488 ) Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (30) TAC Fax: (30) Visit us at for sales contact information. 2/0 9