Linear Derating Factor 17 mw/ C V GS Gate-to-Source Voltage ± 12 V T J, T STG Junction and Storage Temperature Range -55 to C
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1 l Ultra Low R DS(on) per Footprint Area l Low Thermal Resistance l P-Channel MOSFET l One-third Footprint of SOT-23 l Super Low Profile (<.8mm) l Available Tested on Tape & Reel l Lead-Free Description True chip-scale packaging is available from International Rectifier. Through the use of advanced processing techniques, and a unique packaging concept, extremely low on-resistance and the highest power densities in the industry have been made available for battery and load management applications. These benefits, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device. IRF60PbF HEXFET Power MOSFET V DSS R DS(on) max I D -20V 0.065Ω@V GS = -4.5V -5.A 0.095Ω@V GS = -2.5V -4.A G D S PD B FlipFET ISOMETRIC The FlipFET package, is one-third the footprint of a comparable SOT-23 package and has a profile of less than.8mm. Combined with the low thermal resistance of the die level device, this makes the FlipFET the best device for application where printed circuit board space is at a premium and in extremely thin application environments such as battery packs, cell phones and PCMCIA cards. Absolute Maximum Ratings Parameter Max. Units V DS Drain- Source Voltage -20 V I T A = 25 C Continuous Drain Current, V 4.5V ±5. I T A = 70 C Continuous Drain Current, V 4.5V ±3.5 A I DM Pulsed Drain Current ±35 P A = 25 C Power Dissipationƒ 2.2 P A = 70 C Power Dissipationƒ.4 W Linear Derating Factor 7 mw/ C V GS Gate-to-Source Voltage ± 2 V T J, T STG Junction and Storage Temperature Range -55 to + 50 C Thermal Resistance Symbol Parameter Typ. Max. Units R θja Junction-to-Ambientƒ 56.5 C/W R θj-pcb Junction-to-PCB mounted /7/06
2 IRF60PbF Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage -20 V V GS = 0V, I D = -250µA V (BR)DSS/ T J Breakdown Voltage Temp. Coefficient -0.0 V/ C Reference to 25 C, I D = -ma R V GS = -4.5V, I D = -5.A DS(on) Static Drain-to-Source On-Resistance Ω V GS = -2.5V, I D = -4.A V GS(th) Gate Threshold Voltage V V DS = V GS, I D = -250µA g fs Forward Transconductance 9.8 S V DS = -V, I D = -5.A I -.0 V µa DS = -20V, V GS = 0V DSS Drain-to-Source Leakage Current -25 V DS = -6V, V GS = 0V, T J = 25 C I Gate-to-Source Forward Leakage 0 V GS = 2V GSS na Gate-to-Source Reverse Leakage -0 V GS = -2V Q g Total Gate Charge 4 2 I D = -5.A Q gs Gate-to-Source Charge nc V DS = -6V Q gd Gate-to-Drain ("Miller") Charge V GS = -5.0V t d(on) Turn-On Delay Time 2 V DD = -V t r Rise Time 2 I D = -.0A ns t d(off) Turn-Off Delay Time 50 R G = 5.8Ω t f Fall Time 50 V GS = -4.5V C iss Input Capacitance 230 V GS = 0V C oss Output Capacitance 250 pf V DS = -5V C rss Reverse Transfer Capacitance 80 ƒ =.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol -2.2 (Body Diode) showing the A I SM Pulsed Source Current integral reverse G -33 (Body Diode) p-n junction diode. V SD Diode Forward Voltage -.2 V T J = 25 C, I S = -2.2A, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = -2.2A Q rr Reverse RecoveryCharge 34 5 nc di/dt = 0A/µs D S Notes: Repetitive rating; pulse width limited by max. junction temperature. ƒ When mounted on inch square 2oz copper on FR-4. Pulse width 400µs; duty cycle 2%. 2
3 IRF60PbF -I D, Drain-to-Source Current (A) 0 0. VGS TOP -7.00V -5.00V -4.50V -2.50V -.80V -.50V -.20V BOTTOM -.00V -.00V 20µs PULSE WIDTH 0.0 T J = 25 C V DS, Drain-to-Source Voltage (V) -I D, Drain-to-Source Current (A) 0 VGS TOP -7.00V -5.00V -4.50V -2.50V -.80V -.50V -.20V BOTTOM-.00V -.00V 20µs PULSE WIDTH 0. T J = 50 C V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics -I D, Drain-to-Source Current (A) 0 T J = 25 C T J = 50 C V DS= -5V 20µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) 2.0 I D = -5.A V GS= -4.5V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3
4 IRF60PbF C, Capacitance (pf) VGS = 0V, f = MHz Ciss = Cgs + Cgd, C ds Crss = Cgd Coss = Cds + Cgd C iss C oss C rss SHORTED -V GS, Gate-to-Source Voltage (V) I D = -5.A V DS =-6V 0 0 -V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage -I SD, Reverse Drain Current (A) 0 T J = 50 C T J = 25 C V GS = 0 V V SD,Source-to-Drain Voltage (V) -I I D, Drain Current (A) 00 0 OPERATION IN THIS AREA LIMITED BY R DS(on) us 0us ms ms TA = 25 C TJ = 50 C Single Pulse V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4
5 IRF60PbF 6.0 V DS R D -I D, Drain Current (A) T C, Case Temperature ( C) R G V GS V GS Pulse Width µs Duty Factor 0. % D.U.T. V DD Fig a. Switching Time Test Circuit V GS t d(on) t r t d(off) t f % + - Fig 9. Maximum Drain Current Vs. Case Temperature 90% V DS Fig b. Switching Time Waveforms 0 Thermal Response (Z thja ) D = PDM 0.0 t SINGLE PULSE (THERMAL RESPONSE) t2 Notes:. Duty factor D = t / t 2 2. Peak T J =P DM x Z thja + TA t, Rectangular Pulse Duration (sec) Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5
6 R DS (on), Drain-to-Source On Resistance (Ω) IRF60PbF R DS(on), Drain-to -Source On Resistance (Ω) I D = -5.A 0.08 V GS = -2.5V V GS = -4.5V V GS, Gate -to -Source Voltage (V) I D, Drain Current (A) Fig 2. Typical On-Resistance Vs. Gate Voltage Fig 3. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50KΩ Q G 2V.2µF.3µF Q GS Q GD D.U.T. + V DS - V G V GS -3mA Charge I G I D Current Sampling Resistors Fig 4a. Basic Gate Charge Waveform Fig 4b. Gate Charge Test Circuit 6
7 -V GS(th) Gate threshold Voltage (V) Power Dissipation (W) IRF60PbF I D = -250µA T J, Temperature ( C ) Pulsewidth (sec) Fig 5. Threshold Voltage Vs. Temperature Fig 6. Maximum Power Dissipation Vs. Time FlipFET Part Marking Information 7
8 IRF60PbF FlipFET Outline Dimension and Tape and Reel (Refer to application note AN- for details about board mounting the 0.8mm ball pitch Flip FET) 27(6 ',0(6,2,* 72/(5$&,*3(5$60(<0 &2752//,*',0(6,2,//,0(7(5 % & ; $ & & ; ; %$//$66,*( &( '5$, '5$, *$7( ; & /($')5((62/'(5 %$//&20326,7,2 6Q $J &X 6RXUFH %DOO 'UDLQ %DOO *DWH %DOO 'UDLQ %DOO PP %$// /2&$7,2 ; PP 5(&200('(')22735,7 PP )(('',5(&7,2 27(6 7$3($'5((/287/,(&2)250672(,$ (,$ Tape and Reel Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information.05/06 8
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More informationV DSS R DS(on) max I D
Applications l High frequency DC-DC converters Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C OSS to Simplify Design, (See App. Note
More informationIRFP2907PbF. HEXFET Power MOSFET V DSS = 75V. R DS(on) = 4.5mΩ I D = 209A. Typical Applications. Benefits
Typical Applications l Telecom applications requiring soft start Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l
More informationIRFZ44ES/L. HEXFET Power MOSFET V DSS = 60V. R DS(on) = 0.023Ω I D = 48A PRELIMINARY
l l l l l l Advanced Process Technology Surface Mount (IRFZ44ES) Low-profile through-hole (IRFZ44EL) 75 C Operating Temperature Fast Switching Fully Avalanche Rated PRELIMINARY G PD - 9.74 IRFZ44ES/L HEXFET
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Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationSMPS MOSFET. V DSS R DS(on) typ. I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l ZVS and High Frequency Circuit l PWM Inverters Benefits l Low Gate Charge Qg results
More informationSMPS MOSFET. V DSS R DS(on) max I D A I DM. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor. V/ns T J
Applications l High frequency DC-DC converters l UPS and Motor Control SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
More informationSMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 500V 0.125Ω 170ns 34A
Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET Features and Benefits SuperFast body diode eliminates the
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IRF3808 AUTOMOTIVE MOSFET Typical Applications HEXFET Power MOSFET Integrated Starter Alternator D 42 Volts Automotive Electrical Systems V DSS = 75V Benefits Advanced Process Technology R DS(on) = 0.007Ω
More informationV DSS R DS(on) max Qg 30V GS = 10V 5.4nC
PD - 96227B Applications l Synchronous Buck Converter for Computer Processor Power l Isolated DC to DC Converters for Network and Telecom l Buck Converters for Set-Top Boxes l System/load switch Benefits
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SMPS MOSFET PD - 95536 IRFB23N20DPbF IRFS23N20DPbF IRFSL23N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 0.Ω 24A Benefits Low Gate-to-Drain
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Applications l Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box l Lead-Free S Benefits l Very Low R DS(on) at 4.5V l Low Gate Charge l Fully Characterized
More information8 S1, D2. Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Co-Pack Dual N-channel HEXFET Power MOSFET and Schottky Diode Ideal for Synchronous Buck DC-DC Converters Up to A Peak Output Low Conduction Losses Low Switching Losses Low Vf Schottky Rectifier D D 2
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l Co-packaged HEXFET Power MOSFET and Schottky Diode l Ideal For Buck Regulator pplications l P-Channel HEXFET l Low V F Schottky Rectifier l SO-8 Footprint l Lead-Free Description The FETKY TM family
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Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 94357A IRFB52N15D IRFS52N15D IRFSL52N15D HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 150V 0.032Ω 60A Benefits Low Gate-to-Drain Charge to
More informationSMPS MOSFET. V DSS R DS(on) typ. I D
Absolute Maximum Ratings SMPS MOSFET PD 93923B IRFPS40N50L Applications HEXFET Power MOSFET l Switch Mode Power Supply (SMPS) l UninterruptIble Power Supply V DSS R DS(on) typ. I D l High Speed Power Switching
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD- 95325 IRFB17N20DPbF IRFS17N20DPbF IRFSL17N20DPbF HEXFET Power MOSFET Applications l High frequency DC-DC converters l Lead-Free Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
More informationStorage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l l l l l l Surface Mount (IRLR20N) Straight Lead (IRLU20N) dvanced Process Technology Fast Switching Fully valanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize
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l Ultra Low OnResistance l PChannel l Surface Mount (IRFR54) l Straight Lead (IRFU54) l Advanced Process Technology l Fast Switching G l Fully Avalanche Rated l LeadFree Description Fifth Generation HEXFETs
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PD - 95466A Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
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Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationHEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.045Ω
Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (
More informationLower Conduction Losses Low Thermal Resistance to PCB ( 0.5 C/W)
PD - 97493A V DS 20 V HEXFET Power MOSFET R DS(on) max (@V GS = 4.5V) R DS(on) max (@V GS = 2.5V) 1.20 mω 1.50 mω PQFN 5X6 mm Applications Charge and discharge switch for battery application Load switch
More informationTO-220AB. IRF4104PbF. A I T C = 25 C Continuous Drain Current, V 10V (Package limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationFASTIRFET IRFHE4250DPbF
Q Q2 V DSS 25 25 V R DS(on) max (@V GS = 4.5V) 4..35 m Qg (typical) 3 35 nc FASTIRFET IRFHE4250DPbF HEXFET Power MOSFET I D (@T C = 25 C) 60 60 A Applications Control and Synchronous MOSFETs for synchronous
More informationTO-220AB. IRF540ZPbF A I DM. 140 P C = 25 C Power Dissipation 92 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 93935B SMPS MOSFET IRFR3708 IRFU3708 Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer
More information-280 P C = 25 C Power Dissipation 170 Linear Derating Factor. W/ C V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 150 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters Are Differrent from IRF4905S Lead-Free Description
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