HEXFET Power MOSFET V DSS = 30V. R DS(on) = 0.045Ω I D = 3.9A

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1 Surface Mount Advanced Process Technoogy Utra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fuy Avaanche Rated Lead-Free Description Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing techniques to achieve extremey ow on-resistance per siicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are we known for, provides the designer with an extremey efficient and reiabe device for use in a wide variety of appications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave sodering techniques. Its unique package design aows for easy automatic pickand-pace as with other SOT or SOIC packages but has the added advantage of improved therma performance due to an enarged tab for heatsinking. Power dissipation of.0w is possibe in a typica surface mount appication. G PD IRLL2703PBF HEXFET Power MOSFET D S V DSS = 30V R DS(on) = 0.045Ω I D = 3.9A SOT-223 Absoute Maximum Ratings Parameter Max. Units I T A = 25 C Continuous Drain Current, V V** 5.5 I T A = 25 C Continuous Drain Current, V V* 3.9 I T A = 70 C Continuous Drain Current, V V* 3. A I DM Pused Drain Current 6 P A = 25 C Power Dissipation (PCB Mount)** 2. W P A = 25 C Power Dissipation (PCB Mount)*.0 W Linear Derating Factor (PCB Mount)* 8.3 mw/ C V GS Gate-to-Source Votage ± 6 V E AS Singe Puse Avaanche Energy 80 mj I AR Avaanche Current 3.9 A E AR Repetitive Avaanche Energy * 0. mj dv/dt Peak Diode Recovery dv/dt ƒ 5.0 V/ns T J, T STG Junction and Storage Temperature Range -55 to + 50 C Therma Resistance Parameter Typ. Max. Units R θja Junction-to-Amb. (PCB Mount, steady state)* C/W R θja Junction-to-Amb. (PCB Mount, steady state)** * When mounted on FR-4 board using minimum recommended footprint. ** When mounted on inch square copper board, for comparison with other SMD devices. 05/28/04

2 Eectrica T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Votage 30 V V GS = 0V, I D = 250µA V (BR)DSS / T J Breakdown Votage Temp. Coefficient 0.06 V/ C Reference to 25 C, I D = ma V GS = V, I D = 3.9A R DS(on) Static Drain-to-Source On-Resistance Ω V GS = 5.0V, I D = 3.A V GS = 4.0V, I D = 2.0A V GS(th) Gate Threshod Votage V V DS = V GS, I D = 250µA g fs Forward Transconductance 5.9 S V DS = 25V, I D = 2.3 A I DSS Drain-to-Source Leakage Current 25 V DS = 30V, V GS = 0V µa 250 V DS = 24V, V GS = 0V, T J = 25 C I GSS Gate-to-Source Forward Leakage V GS = 6V na Gate-to-Source Reverse Leakage - V GS = -6V Q g Tota Gate Charge I D = 2.3A Q gs Gate-to-Source Charge nc V DS = 24V Q gd Gate-to-Drain ("Mier") Charge V GS = 5.0V, See Fig. 6 and 9 t d(on) Turn-On Deay Time 7.4 V DD = 5V t r Rise Time 24 I ns D = 2.3A t d(off) Turn-Off Deay Time 6.9 R G = 6.2 Ω t f Fa Time 4 R D = 6.5 Ω, See Fig. C iss Input Capacitance 530 V GS = 0V C oss Output Capacitance 230 pf V DS = 25V C rss Reverse Transfer Capacitance 95 ƒ =.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbo 3.9 (Body Diode) showing the A I SM Pused Source Current integra reverse 6 (Body Diode) p-n junction diode. V SD Diode Forward Votage.0 V T J = 25 C, I S = 2.3A, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = 2.3A Q rr Reverse RecoveryCharge nc di/dt = A/µs t on Forward Turn-On Time Intrinsic turn-on time is negigibe (turn-on is dominated by L S +L D ) Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. ) Starting T J = 25 C, L = 24 mh R G = 25Ω, I AS = 3.9A. (See Figure 2) ƒ I SD 2.3A, di/dt 50A/µs, V DD V (BR)DSS, T J 50 C Puse width 300µs; duty cyce 2%. 2

3 I D, Drain-to-Source Current (A) 0. VGS TOP 5V V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V 2.7V I D, Drain-to-Source Current (A) VGS TOP 5V V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V 2.7V 20µs PULSE WIDTH 0.0 T J = 25 C 0. V DS, Drain-to-Source Votage (V) 20µs PULSE WIDTH T J = 50 C V DS, Drain-to-Source Votage (V) Fig. Typica Output Characteristics Fig 2. Typica Output Characteristics I D, Drain-to-Source Current (A) T J = 50 C T J = 25 C V DS= 25V 20µs PULSE WIDTH V GS, Gate-to-Source Votage (V) R DS(on), Drain-to-Source On Resistance (Normaized) 2.0 I D = 3.9A V GS = V T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized On-Resistance Vs. Temperature 3

4 C, Capacitance (pf) 0 VGS = 0V, f = MHz Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd 800 Coss = Cds + Cgd C iss 600 C oss C rss 0 V DS, Drain-to-Source Votage (V) V GS, Gate-to-Source Votage (V) I = D 2.3A V DS = 24V V DS = 5V FOR TEST CIRCUIT SEE FIGURE Q G, Tota Gate Charge (nc) Fig 5. Typica Capacitance Vs. Drain-to-Source Votage Fig 6. Typica Gate Charge Vs. Gate-to-Source Votage I SD, Reverse Drain Current (A) T J = 50 C T J = 25 C V GS = 0 V V SD,Source-to-Drain Votage (V) I D, Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) us ms TA = 25 C TJ = 50 C ms Singe Puse 0. V DS, Drain-to-Source Votage (V) Fig 7. Typica Source-Drain Diode Forward Votage Fig 8. Maximum Safe Operating Area 4

5 4.0 V DS R D I D, Drain Current (A) T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig a. Switching Time Test Circuit V DS 90% R G V GS 5.0V Puse Width µs Duty Factor 0. % D.U.T. % V GS t d(on) t r t d(off) t f Fig b. Switching Time Waveforms + - V DD 0 Therma Response (Z thja ) D = t t2 SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J= P DM x Z thja + TA t, Rectanguar Puse Duration (sec) PDM Fig. Maximum Effective Transient Therma Impedance, Junction-to-Ambient 5

6 5V V DS L DRIVER R G D.U.T + I AS - V DD A V tp 0.0Ω Fig 2a. Uncamped Inductive Test Circuit V (BR)DSS tp E AS, Singe Puse Avaanche Energy (mj) TOP BOTTOM Fig 2c. Maximum Avaanche Energy Vs. Drain Current I D.7A 3.A 3.9A Starting T, Junction Temperature ( J C) I AS Fig 2b. Uncamped Inductive Waveforms Current Reguator Same Type as D.U.T. 50KΩ Q G 2V.2µF.3µF 5.0 V Q GS Q GD D.U.T. + V - DS V G V GS 3mA Charge I G I D Current Samping Resistors Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit 6

7 SOT-223 (TO-26AA) Package Outine Dimensions are shown in miimeters (inches) SOT-223 (TO-26AA) Part Marking Information HEXFET PRODUCT MARKING THIS IS AN IRFL04 INTERNATIONAL RECTIFIER LOGO FL04 34P TOP PART NUMBER DATE CODE (YYWW) YY = YEAR WW = WEEK P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) LOT CODE A = ASSEMBLY SITE CODE BOTTOM 7 AXXXX

8 SOT-223 (TO-26AA) Tape & Ree Information Dimensions are shown in miimeters (inches) TR 2.05 (.080).95 (.077) 4. (.6) 3.90 (.54).85 (.072).65 (.065) 0.35 (.03) 0.25 (.0) 7.55 (.297) 7.45 (.294) 7.60 (.299) 7.40 (.292) 6.30 (.64) 5.70 (.69).60 (.062).50 (.059) TYP. FEED DIRECTION 2. (.475).90 (.469) 7. (.279) 6.90 (.272) 2.30 (.090) 2. (.083) NOTES :. CONTROLLING DIMENSION: MILLIMETER. 2. OUTLINE CONFORMS TO EIA-48 & EIA EACH O (3.00) REEL CONTAINS 2,500 DEVICES (.59) 2.80 (.504) 5.40 (.607).90 (.469) (3.000) MAX (.969) MIN. NOTES :. OUTLINE COMFORMS TO EIA CONTROLLING DIMENSION: MILLIMETER.. 3. DIMENSION HUB. 4. INCLUDES FLANGE OUTER EDGE (.566) 2.40 (.488) (.724) MAX. 4 Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., E Segundo, Caifornia 90245, USA Te: (3) TAC Fax: (3) Visit us at for saes contact information. 05/04 8