IRLR8103VPbF. Absolute Maximum Ratings. Thermal Resistance PD A DEVICE CHARACTERISTICS. IRLR8103V 7.9 mω Q G Q SW Q OSS.

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1 PD A IRLR803VPbF N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications 00% R G Tested Lead-Free Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC- DC converters that power the latest generation of microprocessors. The IRLR803V has been optimized for all parameters that are critical in synchronous buck converters including R DS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRLR803V offers an extremely low combination of Q sw & R DS(on) for reduced losses in both control and synchronous FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application. D G D-Pak S DEVICE CHARACTERISTICS IRLR803V 7.9 mω R DS(on) Q G Q SW Q OSS 27 nc 2 nc 29nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current TC = 25 C (V GS > 0V) TC= 90 C Pulsed Drain Current c TC = 25 C Power Dissipation e TC = 90 C Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed Source Current c Symbol IRLR803V Units V DS V GS I D I DM P D 5 W 60 T J, T STG -55 to 50 C I S I SM 30 V ± A A 363 Thermal Resistance Parameter Symbol Typ. Max. Units Maximum Junction-to-Ambient eh R θja 50 Maximum Junction-to-Case h R θjc.09 C/W 2/0604

2 Electrical Characteristics Parameter Symbol Min Typ Max Units Conditions Drain-to-Source Breakdown Voltage BV DSS 30 V V GS = 0V, I D = 250µA Static Drain-Source R DS(on) V GS = 0V, I D = 5A d mω On-Resistance V GS = 4.5V, I D = 5A d Gate Threshold Voltage V GS(th) V V DS = V GS, I D = 250µA Drain-to-Source Leakage Current I DSS 50 µa V DS = 30V, V GS = 0V 20 V DS = 24V, V GS = 0 µa 00 V DS = 24V, V GS = 0, T J = 00 C Gate-Source Leakage Current I GSS ±00 na V GS = ± 20V Total Gate Charge, Control FET Q G 27 V GS = 5V, I D = 5A, V DS = 6V Total Gate Charge, Synch FET Q G 23 V GS = 5V, V DS < 00mV Pre-Vth Gate-Source Charge Q GS 4.7 Post-Vth Gate-Source Charge Q GS2 2.0 nc Gate to Drain Charge Q GD 9.7 V DS = 6V, I D = 5A Switch Charge (Q gs2 + Q gd ) Q SW 2 Output Charge Q OSS 29 V DS = 6V, V GS = 0 Gate Resistance R G Ω Turn-On Delay Time t d(on) 0 V DD = 6V Rise Time t r 9 I D = 5A ns Turn-Off Delay Time t d(off) 24 V GS = 5.0V Fall Time t f 8 Clamped Inductive Load Input Capacitance C iss 2672 Output Capacitance C oss 064 pf V GS = 6V, V GS =0 Reverse Transfer Capacitance C rss 09 Source-Drain Rating & Characteristics Parameter Symbol Min Typ Max Units Diode Forward Voltage V SD V Reverse Recovery Charge f Q rr 03 nc Reverse Recovery Charge Q rr(s) 96 nc (with Parallel Schottky) f Conditions IS = 5Ad, V GS = 0V di/dt ~ 700A/µs V DS = 6V, V GS = 0V, I F = 5A di/dt = 700A/µs, (with 0BQ040) V DS = 6V, V GS = 0V, I F = 5A 2 Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400 µs; duty cycle 2%. ƒ When mounted on inch square copper board, t < 0 sec. Typ = measured - Q oss Typical values of R DS (on) measured at V GS = 4.5V, Q G, Q SW and Q OSS measured at V GS = 5.0V, I F = 5A.

3 I D, Drain-to-Source Current (A) VGS TOP 5V 0V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM2.7V 2.7V I D, Drain-to-Source Current (A) VGS TOP 5V 0V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM2.7V 2.7V 20µs PULSE WIDTH T J = 25 C V DS, Drain-to-Source Voltage (V) 20µs PULSE WIDTH T J = 50 C V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I D, Drain-to-Source Current (A) T J = 25 C T J = 50 C V DS= 5V 20µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) 2.0 I D = 5A V GS = 0V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3

4 C, Capacitance (pf) VGS = 0V, f = MHz Ciss = Cgs + Cgd, C ds Crss = Cgd Coss = Cds + Cgd C iss C oss SHORTED V GS, Gate-to-Source Voltage (V) I D = 5A V DS= 24V V DS= 5V C rss V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage I SD, Reverse Drain Current (A) T J= 50 C T J= 25 C V GS = 0 V V SD,Source-to-Drain Voltage (V) 0000 I D, Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 0us 00us ms 0ms TC = 25 C TJ = 50 C Single Pulse 0 00 V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 Fig 8. Maximum Safe Operating Area

5 I D, Drain Current (A) LIMITED BY PACKAGE R D V DS V GS D.U.T. R G 0V Pulse Width µs Duty Factor 0. % Fig 0a. Switching Time Test Circuit V DS 90% + V - DD T C, Case Temperature ( C) 0% V GS t d(on) t r t d(off) t f Fig 9. Maximum Drain Current Vs. Case Temperature Fig 0b. Switching Time Waveforms 0 Thermal Response(Z thjc ) 0. D = SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t Peak T J=P DMx Z thjc + TC t, Rectangular Pulse Duration (sec) PDM t t2 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5

6 R DS ( on ), Drain-to-Source On Resistance ( Ω ) R DS(on), Drain-to -Source On Resistance ( Ω) IRLR803VPbF VGS = 4.5V 0.00 I D = 5A VGS = 0V I D, Drain Current ( A ) V GS, Gate -to -Source Voltage (V) Fig 2. On-Resistance Vs. Drain Current Fig 3. On-Resistance Vs. Gate Voltage Current Regulator Same Type as D.U.T. 50KΩ V GS Q G 2V.2µF.3µF D.U.T. + V - DS V G Q GS Q GD V GS 3mA Charge I G I D Current Sampling Resistors Fig 4a&b. Basic Gate Charge Test Circuit and Waveform 6

7 D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: THIS IS AN IRFR20 WITH ASSEMBLY LOT CODE 234 ASSEMBLED ON WW 6, 999 IN THE ASSEMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRFU20 96A 2 34 PART NUMBER DATE CODE YEAR 9 = 999 WEEK 6 LINE A OR INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRFU PART NUMBER DATE CODE P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) YEAR 9 = 999 WEEK 6 A = ASSEMBLY SITE CODE 7

8 D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 6.3 (.64 ) 5.7 (.69 ) 6.3 (.64 ) 5.7 (.69 ) 2. (.476 ).9 (.469 ) FEED DIRECTION 8. (.38 ) 7.9 (.32 ) FEED DIRECTION NOTES :. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-48 & EIA INCH NOTES :. OUTLINE CONFORMS TO EIA mm Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (30) TAC Fax: (30) Visit us at for sales contact information.2/04 8

9 Note: For the most current drawings please refer to the IR website at: