IRF7338. HEXFET Power MOSFET. Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel.

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1 PD C HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S G S2 N-CHANNEL MOSFET D D D2 N-Ch P-Ch DSS 2-2 G2 4 5 P-CHANNEL MOSFET Top iew D2 R DS(on) 0.034Ω 0.50Ω Description These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dual SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. SO-8 Absolute Maximum Ratings Parameter Max. Units DS Drain-to-Source oltage 2-2 I T A = 25 C Continuous Drain Current, A I T A = 70 C Continuous Drain Current, I DM Pulsed Drain Current 26-3 P A = 25 C Power Dissipation ƒ 2.0 W P A = 70 C Power Dissipation ƒ.3 Linear Derating Factor 6 mw/ C GS Gate-to-Source oltage ±2 ± 8.0 T J, T STG Junction and Storage Temperature Range -55 to + 50 C Thermal Resistance Symbol Parameter Typ. Max. Units R θjl Junction-to-Drain Lead 20 R θja Junction-to-Ambient ƒ 62.5 C/W 6/2/03

2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions N-Ch 2 GS = 0, I D = 250µA (BR)DSS Drain-to-Source Breakdown oltage P-Ch -2 GS = 0, I D = -250µA N-Ch 0.0 Reference to 25 C, I D = ma (BR)DSS / T J Breakdown oltage Temp. Coefficient / C P-Ch -0.0 Reference to 25 C, I D = -ma R DS(ON) Static Drain-to-Source On-Resistance GS = 4.5, I D = 6.0A N-Ch GS = 3.0, I D = 2.0A Ω 0.50 GS = -4.5, I D = -2.9A P-Ch GS = -2.7, I D = -.5A N-Ch DS = GS, I D = 250µA GS(th) Gate Threshold oltage P-Ch DS = GS, I D = -250µA N-Ch 9.2 DS = 6.0, I D = 6.0A g fs Forward Transconductance S P-Ch 3.5 DS = -6.0, I D = -.5A N-Ch 20 DS = 9.6, GS = 0 P-Ch -.0 DS = -9.6, GS = 0 I DSS Drain-to-Source Leakage Current µa N-Ch 50 DS = 9.6, GS = 0, T J = 55 C P-Ch -25 DS = -9.6, GS = 0, T J = 55 C I GSS Gate-to-Source Forward Leakage N-Ch ±00 na GS = ± 2 P-Ch ±00 GS = ± 8.0 N-Ch 8.6 Q g Total Gate Charge P-Ch 6.6 nc I N-Ch.9 D = 6.0A, DS = 6.0, GS = 4.5 Q gs Gate-to-Source Charge P-Ch.3 N-Ch 3.9 Q gd Gate-to-Drain ("Miller") Charge I P-Ch.6 D = -2.9A, DS = -9.6, GS = -4.5 N-Ch 6.0 t d(on) Turn-On Delay Time P-Ch 9.6 N-Ch 7.6 DD = 6.0, I D =.0A, R G = 6.0Ω, t r Rise Time ns P-Ch 3 GS = 4.5 N-Ch 26 t d(off) Turn-Off Delay Time P-Ch 27 N-Ch 34 DD = -6.0, I D = -2.9A, R G = 6.0Ω, t f Fall Time P-Ch 25 GS = -4.5 N-Ch 640 C iss Input Capacitance P-Ch 490 pf N-Ch 340 GS = 0, DS = 9.0, ƒ =.0MHz C oss Output Capacitance P-Ch 80 N-Ch 0 C rss Reverse Transfer Capacitance P-Ch 58 GS = 0, DS = -9.0, ƒ =.0KHz Source-Drain Ratings and Characteristics I S I SM SD t rr Q rr Parameter Min. Typ. Max. Units Conditions N-Ch 6.3 Continuous Source Current (Body Diode) P-Ch -3.0 A N-Ch 26 Pulsed Source Current (Body Diode) P-Ch -3 N-Ch.3 T J = 25 C, I S =.7A, GS = 0 Diode Forward oltage P-Ch -.2 T J = 25 C, I S = -2.9A, GS = 0 N-Ch 5 76 ns Reverse Recovery Time P-Ch T J = 25 C, I F =.7A, di/dt = 00A/µs N-Ch nc Reverse Recovery Charge P-Ch T J = 25 C, I F = -2.9A, di/dt = -00A/µs Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400µs; duty cycle 2%. ƒ Surface mounted on in square Cu board. The N-channel MOSFET can withstand 5 GS max for up to 24 hours over the life of the device. 2

3 I D, Drain-to-Source Current ( A) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) I SD, Reverse Drain Current (A) 00 0 GS TOP BOTTOM GS TOP BOTTOM µs PULSE WIDTH Tj = 25 C DS, Drain-to-Source oltage () 0. 20µs PULSE WIDTH Tj = 50 C 0. 0 DS, Drain-to-Source oltage () Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics T J = 25 C T J = 50 C 0.0 T J = 50 C 0.0 DS = 0 20µs PULSE WIDTH GS, Gate-to-Source oltage () T J = 25 C GS = SD, Source-toDrain oltage () Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode Forward oltage 3

4 Power (W) R DS (on), Drain-to-Source On Resistance ( Ω) 2.0 I D = 6.3A R DS(on), Drain-to-Source On Resistance (Normalized) GS = T J, Junction Temperature ( C) GS = 3.0 GS = I D, Drain Current (A) Fig 5. Normalized On-Resistance s. Temperature Fig 6. Typical On-Resistance s. Drain Current R DS(on), Drain-to -Source On Resistance ( Ω) I D = 6.3A GS, Gate -to -Source oltage () Time (sec) Fig 7. Typical On-Resistance s. Gate Fig 8. Typical Power s. Time oltage 4

5 C, Capacitance (pf) GS, Gate-to-Source oltage () GS = 0, f = MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd 2 0 I D = 6.0A DS = Ciss Coss C oss = C ds + C gd Crss DS, Drain-to-Source oltage () Q G Total Gate Charge (nc) Fig 9. Typical Capacitance s. Drain-to-Source oltage Fig 0. Typical Gate Charge s. Gate-to-Source oltage 00 D = 0.50 Thermal Response (Z thja ) SINGLE PULSE (THERMAL RESPONSE) P DM t t 2 Notes:. Duty factor D = t / t 2 2. Peak T J = P DM x Z thja + T A t, Rectangular Pulse Duration (sec) Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5

6 7.0 DS R D R G GS D.U.T. + - DD I D, Drain Current (A) T, Case Temperature ( C C) Fig 3a. Switching Time Test Circuit DS 90% GS Pulse Width µs Duty Factor 0. % Fig 2. Maximum Drain Current s. Case Temperature 0% GS t d(on) t r t d(off) t f Fig 3b. Switching Time Waveforms Current Regulator Same Type as D.U.T. GS Q GS Q G Q GD 2.2µF 50KΩ.3µF D.U.T. + - DS G GS 3mA Charge I G I D Current Sampling Resistors Fig 4a. Basic Gate Charge Waveform Fig 4b. Gate Charge Test Circuit 6

7 -I D, Drain-to-Source Current ( A) -I D, Drain-to-Source Current (A) -I SD, Reverse Drain Current (A) -I D, Drain-to-Source Current (A) 00 0 GS TOP BOTTOM GS TOP BOTTOM µs PULSE WIDTH Tj = 25 C DS, Drain-to-Source oltage () 0. 20µs PULSE WIDTH Tj = 50 C DS, Drain-to-Source oltage () Fig 5. Typical Output Characteristics Fig 6. Typical Output Characteristics T J = 25 C T J = 50 C T J = 50 C.0 T J = 25 C DS = -0 20µs PULSE WIDTH GS, Gate-to-Source oltage () GS = SD, Source-toDrain oltage () Fig 7. Typical Transfer Characteristics Fig 8. Typical Source-Drain Diode Forward oltage 7

8 Power (W) R DS (on), Drain-to-Source On Resistance ( Ω) 2.0 I D = -3.0A R DS(on), Drain-to-Source On Resistance (Normalized) GS = T J, Junction Temperature ( C) GS = -2.7 GS = I D, Drain Current (A) Fig 9. Normalized On-Resistance s. Temperature Fig 20. Typical On-Resistance s. Drain Current R DS(on), Drain-to -Source On Resistance ( Ω) I D = -3.0A GS, Gate -to -Source oltage () Time (sec) Fig 2. Typical On-Resistance s. Gate Fig 22. Maximum Avalanche Energy oltage s. Drain Current 8

9 C, Capacitance (pf) - GS, Gate-to-Source oltage () Ciss GS = 0, f = MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd I D = -2.9A DS = -9.6 DS= Coss Crss DS, Drain-to-Source oltage () Q G Total Gate Charge (nc) Fig 23. Typical Capacitance s. Drain-to-Source oltage Fig 24. Typical Gate Charge s. Gate-to-Source oltage 00 D = 0.50 Thermal Response (Z thja ) SINGLE PULSE (THERMAL RESPONSE) P DM t t 2 Notes:. Duty factor D = t / t 2 2. Peak T J = P DM x Z thja + T A t, Rectangular Pulse Duration (sec) Fig 25. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 9

10 3.0 DS R D -I D, Drain Current (A) T, Case Temperature ( C C) 0% R G GS GS Pulse Width µs Duty Factor 0. % D.U.T. GS t d(on) t r t d(off) t f + - DD Fig 27a. Switching Time Test Circuit Fig 26. Maximum Drain Current s. Case Temperature 90% DS Fig 27b. Switching Time Waveforms Current Regulator Same Type as D.U.T. 50KΩ Q G 2.2µF.3µF Q GS Q GD D.U.T. + DS - G GS -3mA Charge I G I D Current Sampling Resistors Fig 28a. Basic Gate Charge Waveform Fig 28b. Gate Charge Test Circuit 0

11 SO-8 Package Details A E 6 6X D e B H 0.25 [.00] A DIM INCHES MILLIME T ERS MIN MAX MIN MAX A A b c D E e e H K L y BASIC.27 BASIC.025 BASIC BASIC e A C y K x 45 8X b A 0.25 [.00] C A B 0.0 [.004] NOT ES:. DIMENSIONING & TOLERANCING PER ASME Y4.5M CONTROLLING DIMENSION: MILLIMETER 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-02AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.5 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.00]. 7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A S UBSTRATE. 8X L [.255] 3X.27 [.050] 8X c F OOT PRINT 8X 0.72 [.028] 8X.78 [.070] SO-8 Part Marking EXAMPLE: THIS IS AN IRF70 (MOSFET) INTERNATIONAL RECTIFIER LOGO YWW XXXX F70 DAT E CODE (YWW) Y = LAST DIGIT OF THE YEAR WW = WEEK LOT CODE PART NUMBER

12 SO-8 Tape and Reel TERMINAL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEED DIRECTION NOTES:. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-48 & EIA (2.992) MAX. NOTES :. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-48 & EIA (.566 ) 2.40 (.488 ) Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (30) TAC Fax: (30) isit us at for sales contact information.6/03 2