Linear Derating Factor 0.02 W/ C V GS Gate-to-Source Voltage ± 20 V T J, T STG Junction and Storage Temperature Range -55 to C
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1 查询 供应商 捷多邦, 专业 PCB 打样工厂,24 小时加急出货 P HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel S S S A V SS = -30V G 4 5 R S(on) = 0.020Ω escription These P-channel HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. Top View The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. SO-8 Absolute Maximum Ratings Parameter Max. Units V S rain- Source Voltage -30 V T A = 25 C Continuous rain Current, V -0V -8.0 T A = 70 C Continuous rain Current, V -0V -6.4 A I M Pulsed rain Current -50 A = 25 C Power issipation 2.5 A = 70 C Power issipation.6 W Linear erating Factor 0.02 W/ C V GS Gate-to-Source Voltage ± 20 V T J, T STG Junction and Storage Temperature Range -55 to + 50 C Thermal Resistance Parameter Max. Units R θja Maximum Junction-to-Ambientƒ 50 C/W 6/2/0
2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Voltage -30 V V GS = 0V, I = -250µA V (BR)SS / T J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, I = -ma R S(on) Static rain-to-source On-Resistance V GS = -0V, I = -8.0A Ω V GS = -4.5V, I = -5.0A V GS(th) Gate Threshold Voltage -.0 V V S = V GS, I = -250µA g fs Forward Transconductance S V S = -5V, I = -8.0A I SS rain-to-source Leakage Current -0 V S = -24V, V GS = 0V µa -0 V S = -5V, V GS = 0V, T J = 70 C I GSS Gate-to-Source Forward Leakage -00 V GS = -20V na Gate-to-Source Reverse Leakage 00 V GS = 20V Q g Total Gate Charge I = -4.6A Q gs Gate-to-Source Charge 7. nc V S = -5V Q gd Gate-to-rain ("Miller") Charge 8.0 V GS = -0V t d(on) Turn-On elay Time 6 24 V = -5V, V GS = -0V t r Rise Time 76 0 I = -.0A ns t d(off) Turn-Off elay Time R G = 6.0Ω t f Fall Time R = 5Ω C iss Input Capacitance 2320 V GS = 0V C oss Output Capacitance 390 pf V S = -5V C rss Reverse Transfer Capacitance 270 ƒ =.0kHz Source-rain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol -2.5 (Body iode) showing the A I SM Pulsed Source Current integral reverse G -50 (Body iode) p-n junction diode. S V S iode Forward Voltage -.2 V T J = 25 C, I S = -2.5A, V GS = 0V t rr Reverse Recovery Time 34 5 ns T J = 25 C, I F = -2.5A Q rr Reverse Recovery Charge nc di/dt = -00A/µs Notes: Repetitive rating; pulse width limited by max. junction temperature. ƒ Surface mounted on FR-4 board, t 5sec. Pulse width 300µs; duty cycle 2%. 2
3 -I, rain-to-source Current (A) VGS TOP -5V -0V -7.0V -5.5V -4.5V -4.0V -3.5V BOTTOM -2.7V -2.70V 20µs PULSE WITH T J = 25 C V S, rain-to-source Voltage (V) -I, rain-to-source Current (A) VGS TOP -5V -0V -7.0V -5.5V -4.5V -4.0V -3.5V BOTTOM -2.7V -2.70V 20µs PULSE WITH 0. T J = 50 C V S, rain-to-source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics -I, rain-to-source Current (A) 00 0 T J = 25 C T J = 50 C V S= -5V 20µs PULSE WITH V GS, Gate-to-Source Voltage (V) R S(on), rain-to-source On Resistance (Normalized) 2.0 I = -8.0A V GS = -0V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3
4 C, Capacitance (pf) 3500 VGS = 0V, f = MHz Ciss = Cgs + Cgd, C ds SHORTE 3000 Crss = Cgd Coss = Cds + Cgd 2500 C iss C oss C rss V S, rain-to-source Voltage (V) -V GS, Gate-to-Source Voltage (V) I = -4.6A V S =-5V Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. rain-to-source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage OPERATION IN THIS AREA LIMITE BY R S(on) -I S, Reverse rain Current (A) 0 T J = 50 C T J = 25 C V GS = 0 V V S,Source-to-rain Voltage (V) -I I, rain Current (A) us ms 0ms TA = 25 C TJ = 50 C Single Pulse V S, rain-to-source Voltage (V) Fig 7. Typical Source-rain iode Forward Voltage Fig 8. Maximum Safe Operating Area 4
5 -V GS(th), Variace ( V ) I, rain Current (A) Id = -250µA T, Case Temperature ( C C) T J, Temperature ( C ) Fig 9. Maximum rain Current Vs. Case Temperature Fig 0. Typical Vgs(th) Variance Vs. Juction Temperature 00 Thermal Response (Z thja ) 0 = t 0. SINGLE PULSE t2 (THERMAL RESPONSE) Notes:. uty factor = t / t 2 2. Peak T J = P M x Z thja + TA t, Rectangular Pulse uration (sec) PM Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5
6 R S ( on), rain-to-source On Resistance ( Ω ) R S(on), rain-to -Source Voltage ( Ω ) VGS= - 4.5V 0.04 Id = -8.0A VGS = -0V V GS, Gate -to -Source Voltage ( V ) -I, rain Current ( A ) Fig 2. Typical On-Resistance Vs. Gate Voltage Fig 3. Typical On-Resistance Vs. rain Current 6
7 SO-8 Package etails 5 E - A - - B H 0.25 (.00) M A M e 6X e K x 45 θ A - C (.004) L 6 B 8X A 8X 0.25 (.00) M C A S B S NOTES:. IMENSIONING AN TOLERANCING PER ANSI Y4.5M CONTROLLING IMENSION : INCH. 3. IMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 4. OUTLINE CONFORMS TO JEEC OUTLINE MS-02AA. 5 IMENSION OES NOT INCLUE MOL PROTRUSIONS MOL PROTRUSIONS NOT TO EXCEE 0.25 (.006). 6 IMENSIONS IS THE LENGTH OF LEA FOR SOLERING TO A SUBSTRATE.. C 8X IM INCHES MILLIMETERS MIN MAX MIN MAX A A B C E e.050 BASIC.27 BASIC e.025 BASIC BASIC H K L θ RECOMMENE FOOTPRINT 0.72 (.028 ) 8X 6.46 (.255 ).27 (.050 ) 3X.78 (.070) 8X SO-8 Part Marking 7
8 SO-8 Tape and Reel T ER M IN AL N U M B E R 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. ALL IMENSIONS ARE SHOW N IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-48 & EIA (2.992) MAX. NOTES :. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-48 & EIA (.566 ) 2.40 (.488 ) ata and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR s Web site. IR WORL HEAQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (30) TAC Fax: (30) Visit us at for sales contact information. 6/0 8
Linear Derating Factor 0.02 W/ C V GS Gate-to-Source Voltage ± 20 V T J, T STG Junction and Storage Temperature Range -55 to C
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SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l
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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Seventh Generation HEXFET power
More information1 = D 2 = S 3 = S 4 = G
l Ultra Low On-Resistance l P-Channel MOSFET l Very Small SOIC Package l Low Profile (
More informationIRF3808S IRF3808L HEXFET Power MOSFET
Typical Applications Integrated Starter Alternator 42 Volts Automotive Electrical Systems Benefits Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating G 175 C Operating Temperature
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PD - 95514A IRFR34PbF IRFU34PbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D V 39mΩ 31A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
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Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits
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UTOMOTIVE GRE UIRF7207Q Features dvanced Process Technology Low On-Resistance Logic Level Gate rive P-Channel MOSFET ynamic dv/dt Rating 50 C Operating Temperature Fast Switching Fully valanche Rated Lead-Free,
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P - 95039 IRF733PbF Generation V Technoogy Utra Low On-Resistance ua N-Channe MOSFET Surface Mount Fuy vaanche Rated Lead-Free S G S2 G2 HEXFET Power MOSFET 2 3 4 8 7 6 5 2 2 V SS = 30V R S(on) = 0.029Ω
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HEXFET Power MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Repetitive Avalanche Rated l P-Channel l Fast Switching l Ease of Paralleling l Lead-Free Description Third Generation
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Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET S Description
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More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Typ. Max. Units
HEXFET Power MOFET P - 9530 IRF7403PbF l Generation V Technology l Ultra Low On-Resistance 8 l N-Channel Mosfet 2 7 l urface Mount l vailable in Tape & Reel 3 6 l ynamic dv/dt Rating 4 5 G l Fast witching
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Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V V GS l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l dvanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage ist. = 4.8mm l Fully valanche Rated l Lead-Free escription Fifth Generation
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Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
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SMPS MOSFET PD 93917A IRFP3703 Applications Synchronous Rectification Active ORing l l HEXFET Power MOSFET V DSS R DS(on) max I D 30V 0.0028Ω 2A Benefits l Ultra Low OnResistance l Low Gate Impedance to
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SMPS MOSFET PD - 94357A IRFB52N15D IRFS52N15D IRFSL52N15D HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 150V 0.032Ω 60A Benefits Low Gate-to-Drain Charge to
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SMPS MOSFET PD 93918 IRF3703 Applications Synchronous Rectification Active ORing l l HEXFET Power MOSFET V DSS R DS(on) max I D 30V 2.8mΩ 2A Benefits l Ultra Low OnResistance l Low Gate Impedance to Reduce
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l PChannel l Surface Mount (IRFR930) l Straight Lead (IRFU930) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l LeadFree Description Third Generation HEXFETs from International
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l Co-packaged HEXFET Power MOSFET and Schottky Diode l Ideal For Buck Regulator pplications l P-Channel HEXFET l Low V F Schottky Rectifier l SO-8 Footprint l Lead-Free Description The FETKY TM family
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PD - 93935B SMPS MOSFET IRFR3708 IRFU3708 Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer
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PD- 94504 IRF1312 IRF1312S IRF1312L HEXFET Power MOSFET Applications High frequency DC-DC converters Motor Control Uninterrutible Power Supplies l l l V DSS R DS(on) max I D 80V 10mΩ 95A Benefits l Low
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Applications l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems. l Lead-Free Benefits l Very Low R DS(on) at 4.5V V GS l Low Gate Charge l Fully
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l Advanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description Fifth
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Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (
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P-channel Enhancement-mode Power MOSFET Simple rive Requirement Small Package Outline BV -6V Surface Mount evice R S(ON) 5mΩ RoHS-compliant, Halogen-free G S I -1.A SS escription Advanced Power MOSFETs
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