IRF7240PbF HEXFET Power MOSFET
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1 l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount vailable in Tape & Reel Lead-Free P IRF7240PbF HEXFET Power MOSFET V SS R S(on) max I -40V 0.05@V GS = -0V @V GS = -4.5V -8.4 escription These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. S S S G Top View SO-8 bsolute Maximum Ratings Parameter Max. Units V S rain- Source Voltage -40 V T = 25 C Continuous rain Current, V -0V -0.5 T = 70 C Continuous rain Current, V -0V -8.6 I M Pulsed rain Current -43 = 25 C Power issipation ƒ 2.5 = 70 C Power issipationƒ.6 W Linear erating Factor 20 mw/ C V GS Gate-to-Source Voltage ± 20 V T J, T STG Junction and Storage Temperature Range -55 to + 50 C Thermal Resistance Parameter Max. Units R θj Maximum Junction-to-mbientƒ 50 C/W 06/06/05
2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Voltage -40 V V GS = 0V, I = -250µ V (BR)SS / T J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, I = -m R S(on) Static rain-to-source On-Resistance 0.05 V GS = -0V, I = -0.5 Ω V GS = -4.5V, I = -8.4 V GS(th) Gate Threshold Voltage V V S = V GS, I = -250µ g fs Forward Transconductance 7 S V S = -0V, I = -0.5 I SS rain-to-source Leakage Current -5 V S = -32V, V GS = 0V µ -25 V S = -32V, V GS = 0V, T J = 70 C I GSS Gate-to-Source Forward Leakage -00 V GS = -20V n Gate-to-Source Reverse Leakage 00 V GS = 20V Q g Total Gate Charge 73 0 I = -0.5 Q gs Gate-to-Source Charge 3 47 nc V S = -20V Q gd Gate-to-rain ("Miller") Charge 7 26 V GS = -0V t d(on) Turn-On elay Time 52 V = -20V t r Rise Time 490 I = -.0 ns t d(off) Turn-Off elay Time 20 R G = 6.0Ω t f Fall Time 97 V GS = -0V C iss Input Capacitance 9250 V GS = 0V C oss Output Capacitance 580 pf V S = -25V C rss Reverse Transfer Capacitance 520 ƒ =.0kHz Source-rain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol -2.5 (Body iode) showing the I SM Pulsed Source Current integral reverse G -43 (Body iode) p-n junction diode. S V S iode Forward Voltage -.2 V T J = 25 C, I S = -2.5, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = -2.5 Q rr Reverse Recovery Charge 75 0 nc di/dt = -00/µs Notes: Repetitive rating; pulse width limited by max. junction temperature. ƒ Surface mounted on in square Cu board, t 5sec. Pulse width 400µs; duty cycle 2%. 2
3 -I, rain-to-source Current () VGS TOP -5V -0V -4.5V -3.7V -3.5V -3.3V -3.0V BOTTOM -2.7V -2.70V 20µs PULSE WITH 0.0 T J = 25 C V S, rain-to-source Voltage (V) -I, rain-to-source Current () VGS TOP -5V -0V -4.5V -3.7V -3.5V -3.3V -3.0V BOTTOM -2.7V -2.70V 20µs PULSE WITH T J = 50 C V S, rain-to-source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics -I, rain-to-source Current () T J = 50 C T J = 25 C V S= -25V 20µs PULSE WITH V GS, Gate-to-Source Voltage (V) R S(on), rain-to-source On Resistance (Normalized) 2.0 I = V GS= -0V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3
4 C, Capacitance(pF) IRF7240PbF Ciss Coss Crss V GS = 0V, f = MHZ C iss = C gs + C gd, C ds SHORTE C rss = C gd C oss = C ds + C gd V S, rain-to-source Voltage (V) -V GS, Gate-to-Source Voltage (V) I = -0.5 V S =-32V V S =-20V V S =-8V Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. rain-to-source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage -I S, Reverse rain Current () 00 0 T J = 50 C T J = 25 C V GS = 0 V V S,Source-to-rain Voltage (V) -I I, rain Current () 00 0 OPERTION IN THIS RE LIMITE BY R S(on) 00us ms 0ms T = 25 C TJ = 50 C Single Pulse V S, rain-to-source Voltage (V) Fig 7. Typical Source-rain iode Forward Voltage Fig 8. Maximum Safe Operating rea 4
5 2 V S R -I, rain Current () T C, Case Temperature ( C) R G V GS V GS Pulse Width µs uty Factor 0. %.U.T. V Fig 0a. Switching Time Test Circuit V GS t d(on) t r t d(off) t f 0% + - Fig 9. Maximum rain Current Vs. Case Temperature 90% V S Fig 0b. Switching Time Waveforms 00 Thermal Response (Z thj ) 0 = t 0. t2 SINGLE PULSE (THERML RESPONSE) Notes:. uty factor = t / t 2 2. Peak T J = P M x Z thj + T t, Rectangular Pulse uration (sec) PM Fig. Maximum Effective Transient Thermal Impedance, Junction-to-mbient 5
6 R S (on), rain-to-source On Resistance ( Ω) IRF7240PbF R S(on), rain-to -Source On Resistance (Ω) V GS = -4.5V I = -0.5 V GS = -0V V GS, Gate -to -Source Voltage (V) I, rain Current () Fig 2. Typical On-Resistance Vs. Gate Voltage Fig 3. Typical On-Resistance Vs. rain Current Current Regulator Same Type as.u.t. 50KΩ Q G 2V.2µF.3µF Q GS Q G.U.T. + V S - V G V GS -3m Charge I G I Current Sampling Resistors Fig 4a. Basic Gate Charge Waveform Fig 4b. Gate Charge Test Circuit 6
7 -V GS(th), Variace ( V ) Power (W) IRF7240PbF I = -250µ T J, Temperature ( C ) Time (sec) Fig 5. Typical Vgs(th) Variance Vs. Juction Temperature Fig 6. Typical Power Vs. Time 7
8 SO-8 Package Outline imensions are shown in millimeters (inches) E 6 6X e B H 0.25 [.00] IM INCHES MILLIMETERS MIN MX MIN MX b c E e e H K L y BSIC.27 BSIC.025 BSIC BSIC e C y K x 45 8X b 0.25 [.00] C B 0.0 [.004] NOT ES :. IMENSIONING & TOLERNCING PER SME Y4.5M CONTROLLING IMENSION: MILLIMETER 3. IMENSIONS RE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEEC OUTLINE MS IMENSION OES NOT INCLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXCEE 0.5 [.006]. 6 IMENSION OES NOT INCLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXCEE 0.25 [.00]. 7 IMENSION IS THE LENGTH OF LE FOR SOLERING TO SUBST RT E. 8X L [.255] 3X.27 [.050] 8X c F OOT PRINT 8X 0.72 [.028] 8X.78 [.070] SO-8 Part Marking EXMPLE: THIS IS N IRF70 (MOSFET) INTERNTIONL RECTIFIER LOGO XXXX F70 T E COE (YWW) P = ES IGNT ES LE-FREE PROUCT (OPTIONL) Y = LST IGIT OF THE YER WW = WEEK = SSEMBLY SITE COE LOT COE PRT NUMBER 8
9 SO-8 Tape and Reel imensions are shown in millimeters (inches) TERMINL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. LL IMENSIONS RE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EI-48 & EI (2.992) MX. NOTES :. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI-48 & EI (.566 ) 2.40 (.488 ) ata and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR s Web site. IR WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, US Tel: (30) TC Fax: (30) Visit us at for sales contact information.06/05 9
V DSS R DS(on) max (mω)
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l Logic-Level Gate rive l dvanced Process Technology l Ultra Low On-Resistance l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated escription Fifth Generation HEXFETs
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Features l Advanced Process Technology l Key Parameters Optimized for PP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce Power issipation in PP Sustain, Energy Recovery
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Typical R S (on) (mω) V GS, Gate-to-Source Voltage (V) l RoHs Compliant Containing No Lead and Bromide l Low Profile (
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Typical Applications Relay replacement Anti-lock Braking System Air Bag Benefits Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET
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l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (
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Generation V Technoogy Utra Low On-Resistance ua P-Channe MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fuy vaanche Rated escription Fifth Generation HEXFETs from Internationa Rectifier
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P-95214A EXFET Power MOSFET for C-C Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core C-C Converters Low Conduction Losses Low Switching Losses Lead-Free S S 1 2 8 7 A escription This
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P - 975C IRFS432PbF IRFSL432PbF Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l Logic-Level Gate Drive l dvanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully valanche Rated l Lead-Free Description Fifth Generation
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IGITL UIO MOSFET Features Latest MOSFET Silicon technology Key parameters optimized for Class- audio amplifier applications Low R S(on) for improved efficiency Low Q g for better TH and improved efficiency
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l Logic-Level Gate rive l dvanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage ist. = 4.8mm l Fully valanche Rated escription Fifth Generation HEXFETs
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Advanced Process Technoogy Utra Low On-Resistance N Channe MOSFET Surface Mount Avaiabe in Tape & Ree 50 C Operating Temperature Automotive [Q0] Quaified Lead-Free escription Specificay designed for Automotive
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P - 9257E IRLML2402 HEXFET Power MOSFET Generation V Technoogy Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (
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l pplication Specific MOSFETs l Ideal for CPU Core C-C Converters l Low Conduction Losses l Low Switching Losses l Low Profile (
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Typical R S(on) (mω) V GS, Gate-to-Source Voltage (V) l RoHs Compliant l Lead-Free (Qualified up to 260 C Reflow) l pplication Specific MOSFETs l Ideal for High Performance Isolated Converter Primary Switch
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P 97729A HEXFET Power MOSFET V S 2 V V GS max ±2 V 6 A R S(on) max (@V GS = 4.5V) 32 m 2 5 R S(on) max (@V GS = 2.5V) 55 m G 3 4 S Q g typ 2 nc Top View TSOP6 I (@T A = 25 C) 6.9 A Applications l Battery
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l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs from International
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Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G PD - 94822 IRFZ44EPbF HEXFET Power MOSFET D S V DSS = 60V R DS(on) = 0.023Ω
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l LogicLevel Gate rive l dvanced Process Technology l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier
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More information1 SO-8 Top View Package Standard Pack EOL Base part number IRF7404QTRPbF SO-8 Tape and Reel 4000 EOL 527 IRF7404QPbF SO-8 Tube 95 EOL 529
EN OF LIFE HEXFET Power MOSFET dvanced Process Technoogy Utra Low OnResistance P Channe MOSFET Surface Mount vaiabe in Tape & Ree 50 C Operating Temperature LeadFree escription These HEXFET Power MOSFET's
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l l l l dvanced Process Technology Optimized for 4.5V-7.V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Description These HEXFET Power MOSFETs were designed specifically to meet the demands
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dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching PChannel Fully valanche Rated LeadFree Description Fifth Generation HEXFETs from International Rectifier utilize
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Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
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Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
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P 9.44B IRLMS6702 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low Rds(on) PChannel MOSFET 2 6 5 V SS = 20V escription Fifth Generation HEXFETs from International Rectifier
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l dvanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l PChannel l Fully valanche Rated l LeadFree Description Fifth Generation HEXFETs from International Rectifier
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l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free l RoHS Compliant, Halogen-Free HEXFET Power MOSFET V DSS R DS(on) max (mw) I D -30V
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PD -95487A Typical Applications l Industrial Motor Drive Benefits l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
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l dvanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l PChannel l Fully valanche Rated l LeadFree Description Fifth Generation HEXFETs from International Rectifier
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