D 2 Pak TO
|
|
- Allison Griffin
- 6 years ago
- Views:
Transcription
1 l Logic-Level Gate Drive l dvanced Process Technology l Surface Mount (IRLZ24NS) l Low-profile through-hole (IRLZ24NL) l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free Description PD IRLZ24NSPbF IRLZ24NLPbF HEXFET Power MOSFET V DSS = 55V R DS(on) = 0.06Ω I D = 8 Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D 2 Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D 2 Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRLZ24NL) is available for lowprofile applications. D 2 Pak TO-262 bsolute Maximum Ratings Parameter Max. Units I T C = 25 C Continuous Drain Current, V 0V 8 I T C = 00 C Continuous Drain Current, V 0V 3 I DM Pulsed Drain Current 72 P = 25 C Power Dissipation 3.8 W P C = 25 C Power Dissipation 45 W Linear Derating Factor 0.30 W/ C V GS Gate-to-Source Voltage ±6 V E S Single Pulse valanche Energy 68 mj I R valanche Current E R Repetitive valanche Energy 4.5 mj dv/dt Peak Diode Recovery dv/dt ƒ 5.0 V/ns T J Operating Junction and -55 to 75 T STG Storage Temperature Range Soldering Temperature, for 0 seconds 300 (.6mm from case ) C Thermal Resistance Parameter Typ. Max. Units R θjc R θj Junction-to-Case Junction-to-mbient ( PCB Mounted,steady-state)** C/W 07/20/04 G D S
2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 55 V V GS = 0V, I D = 250µ V (BR)DSS / T J Breakdown Voltage Temp. Coefficient 0.06 V/ C Reference to 25 C, I D = m V GS = 0V, I D = R DS(on) Static Drain-to-Source On-Resistance Ω V GS = 5.0V, I D = 0.05 V GS = 4.0V, I D = 9.0 V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 250µ g fs Forward Transconductance 8.3 S V DS = 25V, I D = I DSS Drain-to-Source Leakage Current 25 V DS = 55V, V GS = 0V µ 250 V DS = 44V, V GS = 0V, T J = 50 C I GSS Gate-to-Source Forward Leakage 00 V GS = 6V n Gate-to-Source Reverse Leakage -00 V GS = -6V Q g Total Gate Charge 5 I D = Q gs Gate-to-Source Charge 3.7 nc V DS = 44V Q gd Gate-to-Drain ("Miller") Charge 8.5 V GS = 5.0V, See Fig. 6 and 3 t d(on) Turn-On Delay Time 7. V DD = 28V t r Rise Time 74 I D = ns t d(off) Turn-Off Delay Time 20 R G = 2Ω, V GS = 5.0V t f Fall Time 29 R D = 2.4Ω, See Fig. 0 L S Internal Source Inductance 7.5 nh Between lead, and center of die contact C iss Input Capacitance 480 V GS = 0V C oss Output Capacitance 30 pf V DS = 25V C rss Reverse Transfer Capacitance 6 ƒ =.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbol 8 (Body Diode) showing the G I SM Pulsed Source Current integral reverse 72 (Body Diode) p-n junction diode. S V SD Diode Forward Voltage.3 V T J = 25 C, I S =, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = Q rr Reverse Recovery Charge nc di/dt = 00/µs t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S L D ) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. ) V DD = 25V, starting T J = 25 C, L = 790µH R G = 25Ω, I S =. (See Figure 2) ƒ I SD, di/dt 290/µs, V DD V (BR)DSS, T J 75 C Pulse width 300µs; duty cycle 2%. Uses IRLZ24N data and test conditions ** When mounted on " square PCB ( FR-4 or G-0 Material ). For recommended footprint and soldering techniques refer to application note #N
3 I D, Drain-to-Source Current () 00 0 VGS TOP 5V 2V 0V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 2.5V 20µs PULSE WIDTH 0. T J = 25 C V DS, Drain-to-Source Voltage (V) I D, Drain-to-Source Current () 00 0 VGS TOP 5V 2V 0V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 2.5V 20µs PULSE WIDTH 0. T J = 75 C V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I D, Drain-to-Source Current () 00 0 T = 25 C J T = 75 C J V DS= 5V 20µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) I D = 8 V GS = 0V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3
4 C, Capacitance (pf) V GS = 0V, f = MHz C iss = C gs C gd, C ds SHORTED C rss = Cgd C oss = C ds Cgd C iss C oss C rss V GS, Gate-to-Source Voltage (V) I D = V DS = 44V V DS = 28V V DS, Drain-to-Source Voltage (V) 0 FOR TEST CIRCUIT SEE FIGURE Q, Total Gate Charge (nc) G Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage I SD, Reverse Drain Current () 00 0 T = 75 C J T = 25 C J I D, Drain Current () OPERTION IN THIS RE LIMITED BY RDS(on) 0µs 00µs V GS = 0V V SD, Source-to-Drain Voltage (V) T C = 25 C ms T J = 75 C Single Pulse 0ms 0 00 V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating rea 4
5 20 V DS R D I D, Drain Current (mps) T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 0a. Switching Time Test Circuit V DS 90% R G V GS 5.0V Pulse Width µs Duty Factor 0. % D.U.T. 0% V GS t d(on) t r t d(off) t f Fig 0b. Switching Time Waveforms - V DD 0 Thermal Response (Z thjc ) 0. D = SINGLE PULSE (THERML RESPONSE) 2. Peak T J = P DMx Z thjc T C t, Rectangular Pulse Duration (sec) Notes:. Duty factor D = t / t 2 P DM t t 2 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5
6 L V DS D.U.T. R G V - DD 5.0 V I S t p 0.0Ω Fig 2a. Unclamped Inductive Test Circuit V (BR)DSS t p V DD E S, Single Pulse valanche Energy (mj) I D TOP BOTTOM V DD = 25V Starting T J, Junction Temperature ( C) V DS I S Fig 2b. Unclamped Inductive Waveforms Fig 2c. Maximum valanche Energy Vs. Drain Current Current Regulator Same Type as D.U.T. 50KΩ 0 V Q GS Q G Q GD 2V.2µF.3µF D.U.T. V - DS V G V GS 3m Charge I G I D Current Sampling Resistors Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit 6
7 Peak Diode Recovery dv/dt Test Circuit D.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - - R G dv/dt controlled by R G Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test - V DD Driver Gate Drive Period P.W. D = P.W. Period V GS =0V * D.U.T. I SD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt V DD Re-pplied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 4. For N-Channel HEXFETS 7
8 D 2 Pak Package Outline Dimensions are shown in millimeters (inches) D 2 Pak Part Marking Information T HIS IS N IRF530S WIT H LOT CODE 8024 SS EMBLED ON WW 02, 2000 IN THE SSEMBLY LINE "L" Note: "P" in as s embly line pos ition indicates "L ead-f ree" OR INTERNTIONL RECT IFIER LOGO SSEMBLY LOT CODE F530S PRT NUMBER DT E CODE YER 0 = 2000 WEEK 02 LINE L INTE RNT IONL RECTIFIER LOGO SSEMBLY LOT CODE F530S PRT NUMBER DTE CODE P = DESIGNTES LED-FREE PRODUCT (OPTIONL) YER 0 = 2000 WEEK 02 = SS EMBLY SIT E CODE 8
9 TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXMPLE: THIS IS N IRL303L LOT CODE 789 S S E MBLED ON WW 9, 997 IN THE SSEMBLY LINE "C" Note: "P" in as s embly line pos ition indicates "L ead-f ree" OR INTERNTIONL RECTIFIER LOGO S SEMBLY LOT CODE PRT NUMBER DT E CODE YE R 7 = 997 WEEK 9 LINE C INTERNTIONL RECTIFIER LOGO SSEMBLY LOT CODE PRT NUMBER DTE CODE P = DESIGNTES LED-FREE PRODUCT (OPTIONL) YER 7 = 997 WEEK 9 = S S E MB L Y S IT E CODE 9
10 D 2 Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR.60 (.063).50 (.059) 4.0 (.6) 3.90 (.53).60 (.063).50 (.059) (.045) (.035) FEED DIRECTION TRL.85 (.073).65 (.065) 0.90 (.429) 0.70 (.42).60 (.457).40 (.449) 6.0 (.634) 5.90 (.626).75 (.069).25 (.049) 5.42 (.609) 5.22 (.60) (.957) (.94) 4.72 (.36) 4.52 (.78) FEED DIRECTION 3.50 (.532) 2.80 (.504) (.079) (.94) (4.73) MX (2.362) MIN. NOTES :. COMFORMS TO EI CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION HUB. 4. INCLUDES FLNGE OUTER EDGE (.039) (.96) (.97) MX. 4 Data and specifications subject to change without notice. IR WORLD HEDQURTERS: 233 Kansas St., El Segundo, California 90245, US Tel: (30) TC Fax: (30) Visit us at for sales contact information. 07/04 0
Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l Logic-Level Gate Drive l Surface Mount l dvanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fast Switching l Fully valanche Rated Description G PD - 9376C HEXFET Power MOSFET
More informationStorage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l l l l l l Surface Mount (IRLR20N) Straight Lead (IRLU20N) dvanced Process Technology Fast Switching Fully valanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize
More informationStorage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l Logic-Level Gate Drive l Ultra Low On-Resistance l Surface Mount (IRLR33) l Straight Lead (IRLU33) l dvanced Process Technology l Fast Switching l Fully valanche Rated l Lead-Free Description Fifth Generation
More informationHEXFET Power MOSFET V DSS = 40V. R DS(on) = Ω I D = 130A
l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
More informationAbsolute Maximum Ratings
l Logic-Level Gate Drive l dvanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free Description Fifth
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l Logic-Level Gate Drive l dvanced Process Technology l Surface Mount (IRLZ44NS) l Low-profile through-hole (IRLZ44NL) l 175 C Operating Temperature l Fast Switching l Fully valanche Rated Description
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l Logic-Level Gate Drive l dvanced Process Technology l Surface Mount (IRLZ24NS) l Low-profile through-hole (IRLZ24NL) l 75 C Operating Temperature l Fast Switching l Fully valanche Rated Description Fifth
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l Logic-Level Gate Drive l dvanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully valanche Rated l Lead-Free Description Fifth Generation
More informationIRF530NSPbF IRF530NLPbF
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Lead-Free Description Advanced HEXFET Power MOSFETs
More informationIRL3803VSPbF IRL3803VLPbF HEXFET Power MOSFET
l Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL3803VS) l Low-profile through-hole (IRL3803VL) l 175 C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Lead-Free
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l Logic-Level Gate Drive l dvanced Process Technology l Surface Mount (IRL2505S) l Low-profile through-hole (IRL2505L) l 175 C Operating Temperature l Fast Switching l Fully valanche Rated Description
More informationIRL540NS/L. HEXFET Power MOSFET V DSS = 100V. R DS(on) = 0.044Ω I D = 36A. Absolute Maximum Ratings. Thermal Resistance PD
l dvanced Process Technology l Surface Mount (IRL540NS) l Low-profile through-hole (IRL540NL) l 75 C Operating Temperature l Fast Switching l Fully valanche Rated Description Fifth Generation HEXFETs from
More informationl Advanced Process Technology TO-220AB IRF640NPbF
l Advanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description Fifth
More informationIRL1404SPbF IRL1404LPbF
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Seventh Generation HEXFET power
More informationl Advanced Process Technology TO-220AB IRF630N
l Advanced Process Technology l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description Fifth Generation
More informationIRF3205S/L. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 8.0mΩ I D = 110A
l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs from International
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l dvanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l PChannel l Fully valanche Rated l LeadFree Description Fifth Generation HEXFETs from International Rectifier
More informationIRFZ48NS IRFZ48NL HEXFET Power MOSFET
l Advanced Process Technology l Surface Mount (IRFZ48NS) l Low-profile through-hole (IRFZ48NL) l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs
More informationD 2 Pak TO
Logic-Leve Gate Drive dvanced Process Technoogy Surface Mount (IRLZ34NS) Low-profie through-hoe (IRLZ34NL) 75 C Operating Temperature Fast Switching Fuy vaanche Rated Lead-Free Description PD - 95583 IRLZ34NSPbF
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l dvanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l PChannel l Fully valanche Rated l LeadFree Description Fifth Generation HEXFETs from International Rectifier
More informationIRF6215PbF HEXFET Power MOSFET
dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching PChannel Fully valanche Rated LeadFree Description Fifth Generation HEXFETs from International Rectifier utilize
More informationStorage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l l l l l l dvanced Process Technology Surface Mount (IRFZ34NS) Low-profile through-hole (IRFZ34NL) 75 C Operating Temperature Fast Switching Fully valanche Rated Description Fifth Generation HEXFETs from
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Min. Typ. Max Units
l davanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l vailable in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description Fourth Generation
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 95353A SMPS MOSFET IRFR12N25DPbF IRFU12N25DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 250V 0.26Ω 14A Benefits Low Gate-to-Drain Charge
More informationIRLR024NPbF IRLU024NPbF
PD- 9508 IRLR024NPbF IRLU024NPbF HEXFET Power MOSFET Logic-Leve Gate Drive Surface Mount (IRLR024N) Straight Lead (IRLU024N) dvanced Process Technoogy Fast Switching Fuy vaanche Rated Lead-Free G D S V
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 95355A SMPS MOSFET IRFR5N20DPbF IRFU5N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 65Ω 7A Benefits Low Gate-to-Drain Charge to
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 9506A IRFR8N5DPbF IRFU8N5DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 50V 0.25Ω 8A Benefits l Low Gate to Drain Charge to
More informationV DSS R DS(on) max I D
PD- 94504 IRF1312 IRF1312S IRF1312L HEXFET Power MOSFET Applications High frequency DC-DC converters Motor Control Uninterrutible Power Supplies l l l V DSS R DS(on) max I D 80V 10mΩ 95A Benefits l Low
More informationIRF7341. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 0.050Ω
l Generation V Technology l Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l vailable in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fifth Generation HEXFETs from International
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD- 95325 IRFB17N20DPbF IRFS17N20DPbF IRFSL17N20DPbF HEXFET Power MOSFET Applications l High frequency DC-DC converters l Lead-Free Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
More informationSMPS MOSFET. V DSS R DS(on) max I D
Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
More informationStorage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Logic-Leve Gate Drive Utra Low On-Resistance Surface Mount (IRLR2705) Straight Lead (IRLU2705) dvanced Process Technoogy Fast Switching Fuy vaanche Rated Lead-Free Description Fifth Generation HEXFETs
More informationIRFR24N15DPbF IRFU24N15DPbF
PD - 95370B IRFR24N5DPbF IRFU24N5DPbF Applications l High frequency DC-DC converters HEXFET Power MOSFET S R DS(on) max I D 50V 95mΩ 24A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G PD - 94822 IRFZ44EPbF HEXFET Power MOSFET D S V DSS = 60V R DS(on) = 0.023Ω
More informationTO-220AB low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate,
More informationV DSS R DS(on) max I D
PD - 95514A IRFR34PbF IRFU34PbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D V 39mΩ 31A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
More informationStorage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l Logic-Level Gate Drive l Ultra Low On-Resistance l Surface Mount (IRLR33) l Straight Lead (IRLU33) l dvanced Process Technology l Fast Switching l Fully valanche Rated Description Fifth Generation HEXFETs
More informationTO-220AB. IRF3710ZPbF. 240 P C = 25 C Maximum Power Dissipation 160 Linear Derating Factor
PD - 95466A Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 95536 IRFB23N20DPbF IRFS23N20DPbF IRFSL23N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 0.Ω 24A Benefits Low Gate-to-Drain
More informationPRELIMINARY. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD 9.278B PRELIMINRY IRFN dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated HEXFET Power MOSFET V DSS = 55V R DS(on) = 0.02Ω I D = 72 Description
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Min. Typ. Max. Units
HEXFET Power MOSFET l dvanced Process Technology l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free escription Fifth Generation HEXFET power MOSFETs
More informationIRF2204SPbF IRF2204LPbF HEXFET Power MOSFET
Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
More informationIRF530N PD HEXFET Power MOSFET V DSS = 100V. R DS(on) = 0.11Ω I D = 15A PRELIMINARY
HEXFET Power MOSFET dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated PRELIMINRY PD - 9.35 IRF530N V DSS = 00V R DS(on) = 0.Ω Description Fifth
More informationV DSS R DS(on) max I D
Applications l High frequency DC-DC converters Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C OSS to Simplify Design, (See App. Note
More informationD-Pak TO-252AA. I-Pak TO-251AA. 1
l Ultra Low OnResistance l PChannel l Surface Mount (IRFR54) l Straight Lead (IRFU54) l Advanced Process Technology l Fast Switching G l Fully Avalanche Rated l LeadFree Description Fifth Generation HEXFETs
More informationStorage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Logic Leve Gate Drive Utra Low On-Resistance Surface Mount (IRLR34) Straight Lead (IRLU34) dvanced Process Technoogy Fast Switching Fuy vaanche Rated Lead-Free Description Fifth Generation HEXFETs from
More informationTO-220AB. IRF2807ZPbF. 350 P C = 25 C Maximum Power Dissipation 170 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
dvanced Process Technology Ultra Low On-Resistance ynamic dv/dt Rating 75 C Operating Temperature Fast Switching Ease of Paralleling Lead-Free G IRFZ34NPbF HEXFET Power MOSFET S P - 94807 V SS = 55V R
More informationPRELIMINARY. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
dvanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated PRELIMINRY PD 9.383 IRFP064N HEXFET Power MOSFET V DSS = 55V R DS(on)
More informationIRFZ44ES/L. HEXFET Power MOSFET V DSS = 60V. R DS(on) = 0.023Ω I D = 48A PRELIMINARY
l l l l l l Advanced Process Technology Surface Mount (IRFZ44ES) Low-profile through-hole (IRFZ44EL) 75 C Operating Temperature Fast Switching Fully Avalanche Rated PRELIMINARY G PD - 9.74 IRFZ44ES/L HEXFET
More informationSMPS MOSFET. V DSS R DS(on) max I D
Benefits l Ultra-Low Gate Impedance SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for
More informationI, Drain-to-Source Current (A) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current (A) I, Drain-to-Source Current (A)
l dvanced Process Technology l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free escription Fifth Generation HEXFETs from International Rectifier utilize
More informationIRF3808S IRF3808L HEXFET Power MOSFET
Typical Applications Integrated Starter Alternator 42 Volts Automotive Electrical Systems Benefits Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating G 175 C Operating Temperature
More informationl Advanced Process Technology TO-220AB IRF640NPbF
查询 IRF640NLPBF 供应商 捷多邦, 专业 PCB 打样工厂,24 小时加急出货 l Advanced Process Technology l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple
More informationSMPS MOSFET. V DSS R DS(on) max I D
Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V V GS l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC
More informationSMPS MOSFET TO-220AB IRL3713. Symbol Parameter Max V DS Drain-Source Voltage 30 V GS Gate-to-Source Voltage ± 20
SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l % R G Tested
More informationTO-220AB. IRF540ZPbF A I DM. 140 P C = 25 C Power Dissipation 92 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationSMPS MOSFET. V DS 200 V V DS (Avalanche) min. 260 V R DS(ON) 10V 54 m: T J max 175 C TO-220AB. IRFB38N20DPbF
Applications High frequency DC-DC converters Plasma Display Panel Lead-Free l l l SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including
More informationIRFP450LC PD HEXFET Power MOSFET V DSS = 500V. R DS(on) = 0.40Ω I D = 14A
HEXFET Power MOSFET PD - 9.23 IRFP450LC Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, C oss, C rss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive
More informationIRF1010E. HEXFET Power MOSFET V DSS = 60V. R DS(on) = 0.012Ω I D = 81A
l l l l l dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced
More informationIRFZ46ZPbF IRFZ46ZSPbF IRFZ46ZLPbF
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description
More informationD-Pak TO-252AA. I-Pak TO-251AA. 1
l PChannel l Surface Mount (IRFR930) l Straight Lead (IRFU930) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l LeadFree Description Third Generation HEXFETs from International
More informationAUTOMOTIVE MOSFET TO-220AB IRF I DM. 890 P C = 25 C Power Dissipation 330 Linear Derating Factor. 2.2 V GS Gate-to-Source Voltage ± 20
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed
More informationSMPS MOSFET. V DSS R DS(on) max (mω) I D
SMPS MOSFET PD- 94048 IRFR220N IRFU220N HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max (mω) I D 200V 600 5.0A Benefits l Low Gate to Drain Charge to Reduce Switching
More informationTO-220AB. IRF3205ZPbF. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationSMPS MOSFET. V DSS R DS(on) max I D A I DM. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor. V/ns T J
Applications l High frequency DC-DC converters l UPS and Motor Control SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
More informationIRFR24N15D IRFU24N15D
Applications l High frequency DC-DC converters SMPS MOSFET PD - 94392 IRFR24N5D IRFU24N5D HEXFET Power MOSFET V DSS R DS(on) max I D 50V 95mΩ 24A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
More informationSMPS MOSFET. V DSS R DS(on) max I D
Benefits l Ultra-Low Gate Impedance l l Very Low R DS(on) Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters
More informationTO-220AB. IRF4104PbF. A I T C = 25 C Continuous Drain Current, V 10V (Package limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationSMPS MOSFET. V DSS R DS(on) max I D
Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
More informationIRLR3915PbF IRLU3915PbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationAUTOMOTIVE MOSFET TO-220AB IRF P C = 25 C Maximum Power Dissipation 330 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 94357A IRFB52N15D IRFS52N15D IRFSL52N15D HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 150V 0.032Ω 60A Benefits Low Gate-to-Drain Charge to
More informationSMPS MOSFET. V DSS R DS(on) max I D
Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits
More information-280 P C = 25 C Power Dissipation 170 Linear Derating Factor. W/ C V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 150 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters Are Differrent from IRF4905S Lead-Free Description
More informationSMPS MOSFET. V DSS Rds(on) max I D
Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed power switching Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche
More informationAUTOMOTIVE MOSFET. 30 Pulsed Drain Current c. I DM P C = 25 C Maximum Power Dissipation 120 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET S Description
More informationIRFR4105ZPbF IRFU4105ZPbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationIRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF HEXFET Power MOSFET
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Multiple Package Options l Lead-Free Description
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Min. Typ. Max. Units
Logic-Leve Gate Drive dvanced Process Technoogy Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy vaanche Rated Lead-Free Description Fifth Generation HEXFETs from Internationa Rectifier
More informationIRF2804PbF IRF2804SPbF IRF2804LPbF HEXFET Power MOSFET
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free AUTOMOTIVE MOSFET G IRF2804PbF IRF2804SPbF
More informationP C = 100 C Power Dissipation Linear Derating Factor
PDP SWITCH PD - 97228 IRFI4228PbF Features l dvanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch pplications l Low E PULSE Rating to Reduce Power Dissipation
More informationSMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 600V 385mΩ 130ns 15A
Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET PD - 9445A HEXFET Power MOSFET V DSS R DS(on) typ. Trr typ.
More informationFETKY MOSFET & Schottky Diode
l Co-packaged HEXFET Power MOSFET and Schottky Diode l Ideal For Buck Regulator pplications l P-Channel HEXFET l Low V F Schottky Rectifier l SO-8 Footprint l Lead-Free Description The FETKY TM family
More informationSMPS MOSFET. V DSS R DS(on) max I D
Applications l l l l Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching Lead-Free SMPS MOSFET PD - 9546 HEXFET Power MOSFET V DSS R DS(on) max I D 650V 0.93Ω 8.5A Benefits
More informationBase part number Package Type IRFP4137PbF TO-247AC Tube 25 IRFP4137PbF
IRFP437PbF pplication High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits G D HEXFET Power MOSFET V DSS R
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l dvanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage ist. = 4.8mm l Fully valanche Rated l Lead-Free escription Fifth Generation
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
More informationSMPS MOSFET. V DSS R DS(on) max I D
Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
More informationAUTOMOTIVE MOSFET TO-220AB IRFZ44VZ A I DM. 230 P C = 25 C Power Dissipation 92 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed for Automotive
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 1.1 (10) N m (lbf in)
Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
More informationl Advanced Process Technology
l Advanced Process Technology D l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated G l Ease of Paralleling l Simple Drive Requirements S l Lead-Free Description
More information100% Rg tested Increased Reliability. Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen
PD -96276 V DS 3 V R DS(on) max (@V GS = V).85 mω Q g (typical) 37 nc R G (typical).5 Ω I D (@T c(bottom) = 25 C) h IRFH53PbF HEXFET Power MOSFET PQFN 5X6 mm pplications OR-ing MOSFET for 2V (typical)
More informationSMPS MOSFET HEXFET Power MOSFET. V DSS R DS(on) max I D. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor.
Applications l High frequency DC-DC converters l UPS and Motor Control l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
More informationIRFP054V. HEXFET Power MOSFET V DSS = 60V. R DS(on) = 9.0mΩ I D = 93Aˆ. Absolute Maximum Ratings. Thermal Resistance PD
l Advanced Process Technology l Ultra Low OnResistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description Advanced
More informationSMPS MOSFET. V DSS Rds(on) max I D
SMPS MOSFET PD 980 pplications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l High Voltage Isolation = 2.5KVRMS Benefits l Low Gate Charge Qg results
More informationIRFR3710ZPbF IRFU3710ZPbF HEXFET Power MOSFET
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free AUTOMOTIVE MOSFET Description Specifically
More informationIRL3102. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.013Ω I D = 61A PRELIMINARY
l l l l dvanced Process Technology Optimized for 4.5V-7.V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Description These HEXFET Power MOSFETs were designed specifically to meet the demands
More information