Base part number Package Type IRFP4137PbF TO-247AC Tube 25 IRFP4137PbF

Transcription

1 IRFP437PbF pplication High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits G D HEXFET Power MOSFET V DSS R DS(on) typ. max 300V 56m 69m S I D 38 Benefits Improved Gate, valanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and valanche SO Enhanced body diode dv/dt and di/dt Capability Lead-Free, RoHS Compliant S D G TO-247C G D S Gate Drain Source Standard Pack Orderable Part Number Base part number Package Type Form Quantity IRFP437PbF TO-247C Tube 25 IRFP437PbF Parameter Max. Units I T C = 25 C Continuous Drain Current, V V 38 I T C = 0 C Continuous Drain Current, V V 27 I DM Pulsed Drain Current 52 P C = 25 C Maximum Power Dissipation 34 W Linear Derating Factor 2.3 W/ C V GS Gate-to-Source Voltage ± 20 V dv/dt Peak Diode Recovery dv/dt 8.9 V/ns T J Operating Junction and -55 to + 75 T STG Storage Temperature Range C Soldering Temperature, for seconds 300 (.6mm from case) Mounting Torque, 6-32 or M3 Screw lbf in (. N m) valanche Characteristics E S (Thermally limited) Single Pulse valanche Energy 54 mj Thermal Resistance Parameter Typ. Max. Units R JC Junction-to-Case 0.44 R CS Case-to-Sink, Flat Greased Surface 0.24 C/W R J Junction-to-mbient International Rectifier October 30, 202

2 IRFP437PbF (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 300 V V GS = 0V, I D = 250µ V (BR)DSS / T J Breakdown Voltage Temp. Coefficient 0.24 V/ C Reference to 25 C, I D = 3.5m R DS(on) Static Drain-to-Source On-Resistance m V GS = V, I D = 24 V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 250µ I DSS Drain-to-Source Leakage Current 20 V DS =300 V, V GS = 0V µ 250 V DS =300V,V GS = 0V,T J =25 C Gate-to-Source Forward Leakage 0 V GS = 20V I GSS n Gate-to-Source Reverse Leakage -0 V GS = -20V R G Gate Resistance.3 Dynamic Electrical (unless otherwise specified) gfs Forward Transconductance 45 S V DS = 50V, I D =24 Q g Total Gate Charge I D = 24 Q gs Gate-to-Source Charge nc V DS = 50V Q gd Gate-to-Drain Charge V GS = V t d(on) Turn-On Delay Time 8 V DD = 95V t r Rise Time 23 I D = 24 ns t d(off) Turn-Off Delay Time 34 R G = 2.2 t f Fall Time 20 V GS = V C iss Input Capacitance 568 V GS = 0V C oss Output Capacitance 300 V DS = 50V C rss Reverse Transfer Capacitance 77 ƒ =.0MHz pf V C oss eff.(er) Effective Output Capacitance (Energy Related) 96 GS = 0V, VDS = 0V to 240V See Fig. C oss eff.(tr) Output Capacitance (Time Related) 265 V GS = 0V, VDS = 0V to 240V Diode Characteristics I S I SM Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol 40 (Body Diode) showing the G Pulsed Source Current integral reverse 60 (Body Diode) p-n junction diode. V SD Diode Forward Voltage.3 V,I S = 24,V GS = 0V t rr Reverse Recovery Time 302 V DD = 255V ns 379 I F = 24, Q rr Reverse Recovery Charge 739 di/dt = 0/µs nc 2497 I RRM Reverse Recovery Current 3 D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Recommended max ES limit, starting, L = 2.05mH, R G = 50, I S = 24, V GS =V. I SD 24, di/dt 77/µs, V DD V (BR)DSS, T J 75 C. Pulse width 400µs; duty cycle 2%. C oss eff. (TR) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. C oss eff. (ER) is a fixed capacitance that gives the same energy as C oss while V DS is rising from 0 to 80% V DSS. When mounted on " square PCB (FR-4 or G- Material). For recommended footprint and soldering techniques refer to application note #N-994 R is measured at T J approximately 90 C International Rectifier October 30, 202

3 C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current () (Normalized) I D, Drain-to-Source Current () I D, Drain-to-Source Current () IRFP437PbF 0 VGS TOP 5V V 8.0V 7.0V 6.5V 6.0V 5.5V BOTTOM 5.0V 0 VGS TOP 5V V 8.0V 7.0V 6.5V 6.0V 5.5V BOTTOM 5.0V 5.0V 5.0V 60µs PULSE WIDTH Tj = 25 C V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics 60µs PULSE WIDTH Tj = 75 C 0 V DS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics 0 T J = 75 C R DS(on), Drain-to-Source On Resistance I D = 24 V GS = V V DS = 50V 60µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature 00 0 V GS = 0V, f = MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd C iss I D = 24 V DS = 240V V DS = 50V VDS= 60V C oss C rss V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage International Rectifier October 30, 202

4 V GS(th), Energy (µj) Gate threshold Voltage (V) V (BR)DSS, I D, Drain Current () I SD, Reverse Drain Current () I D, Drain-to-Source Current () IRFP437PbF OPERTION IN THIS RE LIMITED BY R DS (on) 0 T J = 75 C 0 0µsec msec V GS = 0V V SD, Source-to-Drain Voltage (V) Tc = 25 C Tj = 75 C Single Pulse DC msec 0 V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Drain-to-Source Breakdown Voltage (V) Fig 8. Maximum Safe Operating rea 370 Id = 3.5m T C, Case Temperature ( C) T J, Temperature ( C ) Fig 9. Maximum Drain Current vs. Case Temperature Fig. Drain-to Source Breakdown Voltage ID = 250µ ID =.0m ID = V DS, Drain-to-Source Voltage (V) Fig. Typical C oss Stored Energy T J, Temperature ( C ) Fig 2. Threshold Voltage vs. Temperature International Rectifier October 30, 202

5 Q RR (nc) Q RR (nc) I RRM () I RRM () IRFP437PbF Thermal Response ( Z thjc ) C/W 0.0 D = SINGLE PULSE 0.00 ( THERML RESPONSE ) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc E-006 E t, Rectangular Pulse Duration (sec) Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Case I F = 6 V R = 255V I F = 24 V R = 255V di F /dt (/µs) Fig 4. Typical Recovery Current vs. dif/dt 3500 I F = 6 V R = 255V di F /dt (/µs) Fig 5. Typical Recovery Current vs. dif/dt 5000 I F = V R = 255V di F /dt (/µs) di F /dt (/µs) Fig 6. Typical Stored Charge vs. dif/dt Fig 7. Typical Stored Charge vs. dif/dt International Rectifier October 30, 202

6 IRFP437PbF Fig 8. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs V (BR)DSS 5V tp V DS L DRIVER R G 20V tp D.U.T I S V DD I S Fig 9a. Unclamped Inductive Test Circuit Fig 9b. Unclamped Inductive Waveforms Fig 20a. Switching Time Test Circuit Fig 20b. Switching Time Waveforms Vds Id Vgs Vgs(th) Qgs Qgs2 Qgd Qgodr Fig 2a. Gate Charge Test Circuit Fig 2b. Gate Charge Waveform International Rectifier October 30, 202

7 IRFP437PbF TO-247C Package Outline Dimensions are shown in millimeters (inches) E2/2 E 2 "" Q E2 2X D B L "" L SEE VIEW "B" 2x b2 b4 e 3x b Ø.0 2x LED TIP B c Ø P Ø.0 B -- S D THERML PD VIEW: "B" PLTING BSE METL Ø.0 E B (c) VIEW: "" - "" (b, b2, b4) SECTION: C-C, D-D, E-E TO-247C Part Marking Information Notes: This part marking information applies to devices produced after 02/26/200 EXMPLE: THIS IS N IRFPE30 WITH SSEMBLY LOT CODE 5657 SSEMBLED ON WW 35, 200 IN THE SSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNTIONL RECTIFIER LOGO SSEMBLY LOT CODE IRFPE30 35H PRT NUMBER DTE CODE YER = 200 WEEK 35 LINE H TO-247C package is not recommended for Surface Mount pplication. Note: For the most current drawing please refer to IR website at International Rectifier October 30, 202

8 IRFP437PbF Qualification Information Industrial Qualification Level (per JEDEC JESD47F) Moisture Sensitivity Level TO-247C N/ RoHS Compliant Yes Qualification standards can be found at International Rectifier s web site: pplicable version of JEDEC standard at the time of product release. Data and specifications subject to change without notice. IR WORLD HEDQURTERS: N Sepulveda., El Segundo, California 90245, US Tel: (3) TC Fax: (3) Visit us at for sales contact information International Rectifier October 30, 202