IRF7811AVPbF IRF7811AVPbF

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1 P-9525 IRF78VPbF IRF78VPbF N-Channel pplication-specific MOSFETs Ideal for CPU Core C-C Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications % R G Tested Lead-Free S S S escription This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency C-C converters that power the latest generation of microprocessors. The IRF78V has been optimized for all parameters that are critical in synchronous buck converters including R S(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF78V offers an extremely low combination of Q sw & R S(on) for reduced losses in both control and synchronous FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application. bsolute Maximum Ratings 4 5 Top View EVICE CHRCTERISTICS SO-8 R S(on) Q G Q SW Q OSS G IRF78V mω 7 nc.7 nc 8. nc Parameter Symbol IRF78V Units rain-to-source Voltage V S 30 V Gate-to-Source Voltage V GS ±20 Continuous Output Current T = 25 C 0.8 I (V GS 4.5V) T L = 90 C.8 Pulsed rain Current c I M T = 25 C 2.5 Power issipation e P T L = 90 C 3.0 W Junction & Storage Temperature Range T J, T STG -55 to 50 C Continuous Source Current (Body iode) Pulsed Source Current c Thermal Resistance Parameter Maximum Junction-to-mbient eh Maximum Junction-to-Lead h I S I SM Symbol Typ Max Units R θj 50 C/W R θjl 20 08/7/04

2 IRF78VPbF Electrical Characteristics Parameter Symbol Min Typ Max Units Conditions rain-to-source Breakdown Voltage V (BR)SS 30 V V GS = 0V, I = 250µ Static rain-to-source On-Resistance R S(on) 4 mω V GS = 4.5V, I = 5 d Gate Threshold Voltage V GS(th) V V S = V GS, I = 250µ 50 µ V S = 30V, V GS = 0V rain-to-source Leakage Current I SS 20 µ V S = 24V, V GS = 0V m V S = 24V, V GS = 0V, T J = C Gate-to-Source Leakage Current I GSS ± n V GS = ± 20V Total Gate Charge, Control FET Q g 7 2 nc V S = 24V, I = 5, V GS = 5.0V Total Gate Charge, Synch FET Q g 4 2 V GS = 5.0V, V S < mv Pre-Vth Gate-to-Source Charge Q gs 3.4 Post-Vth Gate-to-Source Charge Q gs2. Gate-to-rain ("Miller") Charge Q gd 5. V S = V, I = 5 Switch Charge (Q gs2 + Q gd ) Q SW.7 Output Charge Q OSS 8. 2 V S = V, V GS = 0 Gate Resistance R G Ω Turn-On elay Time t d(on) 8. ns V = V Rise Time t r 2 I = 5 Turn-Off elay Time t d(off) 43 V GS = 5.0V Fall Time t f 0 Clamped Inductive Load Input Capacitance C iss 80 pf V GS = 0V Output Capacitance C oss 723 V S = 0V Reverse Transfer Capacitance C rss 4 iode Characteristics Parameter Symbol Min Typ Max Units Conditions iode Forward Voltage V S.3 V T J = 25 C, I S = 5 d,v GS = 0V Reverse Recovery Charge f Reverse Recovery Charge (with Parallel Schottsky) f Q rr 50 nc Q rr 43 nc di/dt = 700/µs V = V, V GS = 0V, I = 5 di/dt = 700/µs, (with 0BQ040) V = V, V GS = 0V, I = 5 Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400 µs; duty cycle 2%. ƒ When mounted on inch square copper board, t < 0 sec. Typ = measured - Q oss Typical values of R S (on) measured at V GS = 4.5V, Q G, Q SW and Q OSS measured at V GS =5.0V, I F = 5. R θ is measured at T J approximately 90 C 2

3 R S(on), rain-to -Source On Resistance ( Ω) C, Capacitance(pF) IRF78VPbF R S(on), rain-to-source On Resistance (Normalized) 2.0 I = V GS = 4.5V T J, Junction Temperature ( C) V GS, Gate-to-Source Voltage (V) 4 2 I = 5 V S = V Q G, Total Gate Charge (nc) Figure. Normalized On-Resistance vs. Temperature Figure 2. Gate-to-Source Voltage vs. Typical Gate Charge I = V GS = 0V, f = MHZ C iss = C gs + C gd, C ds SHORTE C rss = C gd C oss = C ds + C gd Ciss Coss Crss V GS, Gate -to -Source Voltage (V) 0 0 V S, rain-to-source Voltage (V) Figure 3. Typical Rds(on) vs. Gate-to-Source Voltage Figure 4. Typical Capacitance vs. rain-to-source Voltage I, rain-to-source Current () 0 T J = 50 C T J = 25 C I S, Reverse rain Current () 0 T J = 50 C T J = 25 C V S= 5V 20µs PULSE WITH V GS, Gate-to-Source Voltage (V) V GS= 0 V V S,Source-to-rain Voltage (V) Figure 5. Typical Transfer Characteristics Figure. Typical Source-rain iode Forward Voltage 3

4 IRF78VPbF Thermal Response(Z thj ) 0 = SINGLE PULSE (THERML RESPONSE) Notes:. uty factor = t / t 2 2. Peak T J= P M x Z thj + T t, Rectangular Pulse uration (sec) PM t t2 Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-mbient 50 u 8V 5 uh Schottky - V 25nS Repetition rate:hz u Vz500mW Mic4452BM Ohms probe V ds 90% 0% V gs 4 t d(off) t d(on) t t r(v) f(v) Switching Time Waveforms Figure 8. Clamped Inductive load test diagram and switching waveform

5 IRF78VPbF SO-8 Package Outline imensions are shown in millimeters (inches) E X e B H 0.25 [.00] IM INCHES MILLIMETERS MIN MX MIN MX b c E e e H K L y BSIC.27 BSIC.025 BSIC 0.35 BSIC e C y K x 45 8X b 0.25 [.00] C B 0.0 [.004] 8X L 7 8X c NOT ES :. IMENSIONING & TOLERNCING PER SME Y4.5M CONTROLLING IMENSION: MILLIMETER 3. IMENSIONS RE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEEC OUTLINE MS IMENSION OES NOT INCLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXCEE 0.5 [.00]. IMENSION OES NOT INCLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXCEE 0.25 [.00]. 7 IMENSION IS THE LENGTH OF LE FOR SOLERING TO SUBST RT E. SO-8 Part Marking.4 [.255] 3X.27 [.050] F OOT PRINT 8X 0.72 [.028] 8X.78 [.070] EXMPLE: THIS IS N IRF70 (MOSFET) INTERNTIONL RECTIFIER LOGO XXXX F70 T E COE (YWW) P = E S IGNT E S L E -F RE E PROUCT (OPTIONL) Y = LST IGIT OF THE YER WW = WEEK = SSEMBLY SITE COE LOT COE PRT NUMBER 5

6 IRF78VPbF SO-8 Tape and Reel TERMINL NUMBER 2.3 (.484 ).7 (.4 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. LL IMENSIONS RE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EI-48 & EI (2.992) MX. NOTES :. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI-48 & EI (.5 ) 2.40 (.488 ) ata and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR s Web site. IR WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, US Tel: (30) TC Fax: (30) Visit us at for sales contact information.08/04