30V GS = 10V 48nC GS = 4.5V
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1 l Application Specific MOSFETs l Ideal for CPU Core C-C Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7 mm) l ual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques MT Applicable irectfet Outline and Substrate Outline (see p.9,10 for details) P F IRF6603 HEXFET Power MOSFET V SS R S(on) max Qg(typ.) 30V 3.4mΩ@V GS = 10V 48nC 5.5mΩ@V GS = 4.5V irectfet ISOMETRIC SQ SX ST MQ MX MT escription The IRF6603 combines the latest HEXFET Power MOSFET Silicon technology with the advanced irectfet TM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The irectfet package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and process. The irectfet package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%. The IRF6603 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency C-C converters that power the latest generation of processors operating at higher frequencies. The IRF6603 has been optimized for parameters that are critical in synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6603 offers particularly low Rds(on) and high Cdv/ dt immunity for synchronous FET applications. Absolute Maximum Ratings Parameter Max. Units V S rain-to-source Voltage 30 V V GS Gate-to-Source Voltage 20/-12 T A = 25 C Continuous rain Current, V 10V f 27 A T A = 70 C Continuous rain Current, V 10V f 22 T C = 25 C Continuous rain Current, V 10V i 92 I M Pulsed rain Current c 200 A = 25 C Power issipation f 3.6 A = 70 C Power issipation f 2.3 W C = 25 C Power issipation i 42 Linear erating Factor W/ C T J Operating Junction and -40 to 150 C T STG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units R θja Junction-to-Ambient fj 35 R θja Junction-to-Ambient gj 12.5 R θja Junction-to-Ambient hj 20 C/W R θjc Junction-to-Case ij 3.0 R θj-pcb Junction-to-PCB Mounted 1.0 Notes through ˆ are on page /22/05
2 T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units BV SS rain-to-source Breakdown Voltage 30 V V GS = 0V, I = 250µA ΒV SS / T J Breakdown Voltage Temp. Coefficient 28 mv/ C Reference to 25 C, I = 1mA R S(on) Static rain-to-source On-Resistance mω V GS = 10V, I = 25A e V GS = 4.5V, I = 20A e V GS(th) Gate Threshold Voltage V V S = V GS, I = 250µA V GS(th) / TJ Gate Threshold Voltage Coefficient -6.3 mv/ C I SS rain-to-source Leakage Current 30 µa V S = 24V, V GS = 0V 50 µa V S = 30V, V GS = 0V V S = 24V, V GS = 0V, T J = 70 C I GSS Gate-to-Source Forward Leakage na V GS = 20V Gate-to-Source Reverse Leakage - V GS = -12V gfs Forward Transconductance 56 S V S = 15V, I = 20A Q g Total Gate Charge Q gs1 Pre-Vth Gate-to-Source Charge 15.6 V S = 15V Q gs2 Post-Vth Gate-to-Source Charge 5.2 nc V GS = 4.5V Q gd Gate-to-rain Charge 16.1 I = 20A Q godr Gate Charge Overdrive 11.1 See Fig. 16 Q sw Switch Charge (Q gs2 Q gd ) 21.3 Q oss Output Charge 28 nc V S = 16V, V GS = 0V R G Gate Resistance Ω t d(on) Turn-On elay Time 20 V = 15V, V GS = 4.5Ve t r Rise Time 9.9 I = 20A t d(off) Turn-Off elay Time 24 ns Clamped Inductive Load t f Fall Time 71 C iss Input Capacitance 6590 V GS = 0V C oss Output Capacitance 1250 pf V S = 15V C rss Reverse Transfer Capacitance 520 ƒ = 1.0MHz Avalanche Characteristics Parameter Typ. Max. Units E AS Single Pulse Avalanche Energyd 49 mj I AR Avalanche Currentc 20 A E AR Repetitive Avalanche Energy c 4.1 mj iode Characteristics Conditions Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current 38 MOSFET symbol (Body iode) A showing the G I SM Pulsed Source Current 200 integral reverse S (Body iode)c p-n junction diode. V S iode Forward Voltage V T J = 25 C, I S = 20A, V GS = 0V e t rr Reverse Recovery Time ns T J = 25 C, I F = 20A Q rr Reverse Recovery Charge nc di/dt = A/µs e 2
3 I, rain-to-source Current (Α) I, rain-to-source Current (A) I, rain-to-source Current (A) IRF VGS TOP 10V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V BOTTOM 2.7V 0 VGS TOP 10V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V BOTTOM 2.7V V 20µs PULSE WITH Tj = 25 C V S, rain-to-source Voltage (V) 1 2.7V 20µs PULSE WITH Tj = 150 C V S, rain-to-source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics I = 25A.00 T J = 150 C T J = 25 C 1.00 V S = 15V 20µs PULSE WITH V GS, Gate-to-Source Voltage (V) R S(on), rain-to-source On Resistance (Normalized) V GS = 10V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature 3
4 I, rain-to-source Current (A) C, Capacitance(pF) V GS, Gate-to-Source Voltage (V) IRF V GS = 0V, f = 1 MHZ C iss = C gs C gd, C ds SHORTE C rss = C gd C oss = C ds C gd I = 20A V S = 15V 00 Ciss 4.0 Coss Crss V S, rain-to-source Voltage (V) Q G Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. rain-to-source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 0 0 OPERATION IN THIS AREA LIMITE BY R S (on) I S, Reverse rain Current (A) T = 150 J C 10 T = 25 J C 1 V GS= 0 V V S,Source-to-rain Voltage (V) Tc = 25 C Tj = 150 C Single Pulse µsec 1msec 10msec V S, rain-tosource Voltage (V) Fig 7. Typical Source-rain iode Forward Voltage Fig 8. Maximum Safe Operating Area 4
5 I, rain Current (A) V GS(th) Gate threshold Voltage (V) IRF I = 250µA T C, Case Temperature ( C) T J, Temperature ( C ) Fig 9. Maximum rain Current Vs. Case Temperature Fig 10. Threshold Voltage Vs. Temperature Thermal Response (Z thja ) = SINGLE PULSE (THERMAL RESPONSE) P M t 1 t 2 Notes: 1. uty factor = t 1 / t 2 2. Peak T J = P M x Z thja T A t 1, Rectangular Pulse uration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5
6 R G V S 20V V GS tp L.U.T IAS 0.01Ω Fig 12a. Unclamped Inductive Test Circuit tp 15V RIVER - V A V (BR)SS E AS, Single Pulse Avalanche Energy (mj) TOP BOTTOM I 8.9A 16A 20A Starting Tj, Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. rain Current I AS Fig 12b. Unclamped Inductive Waveforms V S L V - Current Regulator Same Type as.u.t. V GS Pulse Width < 1µs uty Factor < 0.1%.U.T 50KΩ 12V.2µF.3µF Fig 14a. Switching Time Test Circuit.U.T. V - S V S 90% V GS 3mA 10% I G I Current Sampling Resistors Fig 13. Gate Charge Test Circuit Fig 14b. Switching Time Waveforms 6 V GS t d(on) t r t d(off) t f
7 -.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - Reverse Recovery Current river Gate rive Period P.W..U.T. I S Waveform Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt = P.W. Period V GS =10V V * R G dv/dt controlled by RG river same type as.u.t. I S controlled by uty Factor "".U.T. - evice Under Test V - Re-Applied Voltage Inductor Curent Body iode Forward rop Ripple 5% I S * V GS = 5V for Logic Level evices Fig 15. Peak iode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs Vds Id Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 16. Gate Charge Waveform 7
8 Power MOSFET Selection for Non-Isolated C/C Converters Control FET Special attention has been given to the power losses in the switching elements of the circuit - Q1 and Q2. Power losses in the high side switch Q1, also called the Control FET, are impacted by the R ds(on) of the MOSFET, but these conduction losses are only about one half of the total losses. Power losses in the control switch Q1 are given by; P loss = P conduction P switching P drive P output This can be expanded and approximated by; P loss = ( I 2 rms R ds(on ) ) I Q gd V in f i g ( ) Q g V g f Q oss 2 V f in I Q gs2 i g V in f This simplified loss equation includes the terms Q gs2 and Q oss which are new to Power MOSFET data sheets. Q gs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Q gs1 and Q gs2, can be seen from Fig 16. Q gs2 indicates the charge that must be supplied by the gate driver between the time that the threshold voltage has been reached and the time the drain current rises to I dmax at which time the drain voltage begins to change. Minimizing Q gs2 is a critical factor in reducing switching losses in Q1. Q oss is the charge that must be supplied to the output capacitance of the MOSFET during every switching cycle. Figure A shows how Q oss is formed by the parallel combination of the voltage dependant (nonlinear) capacitance s C ds and C dg when multiplied by the power supply input buss voltage. Synchronous FET The power loss equation for Q2 is approximated by; * P loss = P conduction P drive P output ( ) P loss = I rms 2 R ds(on) ( ) Q g V g f Q oss 2 V f in Q V f rr in *dissipated primarily in Q1. ( ) For the synchronous MOSFET Q2, R ds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off by the control IC so the gate drive losses become much more significant. Secondly, the output charge Q oss and reverse recovery charge Q rr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs susceptibility to Cdv/dt turn on. The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and V in. As Q1 turns on and off there is a rate of change of drain voltage dv/dt which is capacitively coupled to the gate of Q2 and can induce a voltage spike on the gate that is sufficient to turn the MOSFET on, resulting in shoot-through current. The ratio of Q gd /Q gs1 must be minimized to reduce the potential for Cdv/dt turn on. Figure A: Q oss Characteristic 8
9 irectfet Outline imension, MT Outline (Medium Size Can, T-esignation). Please see irectfet application note AN-1035 for all details regarding the assembly of irectfet. This includes all recommendations for stencil and substrate designs. COE A B C E F G H J K L M N P IMENSIONS METRIC IMPERIAL MIN MAX MIN MAX
10 irectfet Substrate and PCB Layout, MT Outline (MediumSize Can, T-esignation). Please see irectfet application note AN-1035 for all details regarding the assembly of irectfet. This includes all recommendations for stencil and substrate designs. G = GATE = RAIN S = SOURCE G S S irectfet Part Marking
11 irectfet Tape & Reel imension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6603). For 0 parts on 7" reel, order IRF6603TR1 REEL IMENSIONS STANAR OPTION (QTY 4800) TR1 OPTION (QTY 0) METRIC IMPERIAL METRIC IMPERIAL COE A B C E F G H MIN MAX MIN MAX MIN MAX MIN MAX Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 0.24mH R G = 25Ω, I AS = 20A. ƒ Pulse width 400µs; duty cycle 2%. Surface mounted on 1 in. square Cu board. Used double sided cooling, mounting pad. Mounted on minimum footprint full size board with metalized back and with small clip heatsink. T C measured with thermal couple mounted to top (rain) of part. ˆ R θ is measured at T J of approximately 90 C. ata and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR s Web site. IR WORL HEAQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) TAC Fax: (310) Visit us at for sales contact information.12/
12 Note: For the most current drawings please refer to the IR website at:
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P 97729A HEXFET Power MOSFET V S 2 V V GS max ±2 V 6 A R S(on) max (@V GS = 4.5V) 32 m 2 5 R S(on) max (@V GS = 2.5V) 55 m G 3 4 S Q g typ 2 nc Top View TSOP6 I (@T A = 25 C) 6.9 A Applications l Battery
More informationHEXFET Power MOSFET for DC-DC Converters. Absolute Maximum Ratings Parameter Symbol IRF7828PbF Units Drain-Source Voltage V DS
P-95214A EXFET Power MOSFET for C-C Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core C-C Converters Low Conduction Losses Low Switching Losses Lead-Free S S 1 2 8 7 A escription This
More informationSMPS MOSFET. V DSS R DS(on) max I D
Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
More informationIRF6618PbF IRF6618TRPbF
Typical R S(on) (mω), atetosource Voltage (V) l RoHs Compliant l LeadFree (Qualified up to 260 C Reflow) l pplication Specific MOSFETs l Ideal for CPU Core CC Converters l Low Conduction Losses l High
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 95355A SMPS MOSFET IRFR5N20DPbF IRFU5N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 65Ω 7A Benefits Low Gate-to-Drain Charge to
More informationV DSS R DS(on) max Qg 30V GS = 10V 44nC
pplications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated C-C Converters P - 9737 HEXFET Power MOSFET V SS R S(on) max Qg 30V 2.8m:@V GS = V 44nC Benefits
More informationIRFR24N15DPbF IRFU24N15DPbF
PD - 95370B IRFR24N5DPbF IRFU24N5DPbF Applications l High frequency DC-DC converters HEXFET Power MOSFET S R DS(on) max I D 50V 95mΩ 24A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 95353A SMPS MOSFET IRFR12N25DPbF IRFU12N25DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 250V 0.26Ω 14A Benefits Low Gate-to-Drain Charge
More informationAbsolute Maximum Ratings Max. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
PD -9697A Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET
More informationV DSS R DS(on) max I D
PD - 95514A IRFR34PbF IRFU34PbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D V 39mΩ 31A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
More informationLower Conduction Losses Low Thermal Resistance to PCB ( 0.5 C/W)
PD - 97493A V DS 20 V HEXFET Power MOSFET R DS(on) max (@V GS = 4.5V) R DS(on) max (@V GS = 2.5V) 1.20 mω 1.50 mω PQFN 5X6 mm Applications Charge and discharge switch for battery application Load switch
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 1.1 (10) N m (lbf in)
Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
More informationV DSS V GS R DS(on) R DS(on) Q g tot Q gd Q gs2 Q rr Q oss V gs(th)
Typical R S (on) (mω) V GS, Gate-to-Source Voltage (V) l RoHs Compliant Containing No Lead and Bromide l Low Profile (
More informationIRLMS1503. HEXFET Power MOSFET V DSS = 30V. R DS(on) = 0.10Ω. 1. Top View
P - 9508 IRLMS503 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) N-Channel MOSFET 2 6 5 A V SS = 30V escription Fifth Generation HEXFET power MOSFETs from International
More informationIRF6706S2TRPbF IRF6706S2TR1PbF DirectFET Power MOSFET
Typical R S(on) (mω) V S, ate-to-source Voltage (V) l RoHS Compliant and Halogen Free l Low Profile (
More informationV DSS R DS(on) max (mw)
Typical Applications Relay replacement Anti-lock Braking System Air Bag Benefits Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l
More informationAbsolute Maximum Ratings Parameter Symbol IRF7809A V Units Drain-Source Voltage V DS. 30 V Gate-Source Voltage V GS = 25 C I D
PD - 95212A IRF7809AVPbF N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications 0%
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate,
More informationFASTIRFET IRFHE4250DPbF
Q Q2 V DSS 25 25 V R DS(on) max (@V GS = 4.5V) 4..35 m Qg (typical) 3 35 nc FASTIRFET IRFHE4250DPbF HEXFET Power MOSFET I D (@T C = 25 C) 60 60 A Applications Control and Synchronous MOSFETs for synchronous
More informationSMPS MOSFET TO-220AB IRL3713. Symbol Parameter Max V DS Drain-Source Voltage 30 V GS Gate-to-Source Voltage ± 20
SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l % R G Tested
More information-280 P C = 25 C Power Dissipation 170 Linear Derating Factor. W/ C V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 150 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters Are Differrent from IRF4905S Lead-Free Description
More informationTO-220AB. IRF540ZPbF A I DM. 140 P C = 25 C Power Dissipation 92 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationSMPS MOSFET. V DS 200 V V DS (Avalanche) min. 260 V R DS(ON) 10V 54 m: T J max 175 C TO-220AB. IRFB38N20DPbF
Applications High frequency DC-DC converters Plasma Display Panel Lead-Free l l l SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including
More informationTO-220AB. IRF3710ZPbF. 240 P C = 25 C Maximum Power Dissipation 160 Linear Derating Factor
PD - 95466A Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
More informationSMPS MOSFET HEXFET Power MOSFET. V DSS R DS(on) max I D. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor.
Applications l High frequency DC-DC converters l UPS and Motor Control l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
More informationIRF3205S/L. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 8.0mΩ I D = 110A
l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs from International
More informationLower Conduction Losses
PD -96265B V DS 25 V IRFH5250PbF HEXFET Power MOSFET R DS(on) max (@V GS = 0V).5 mω Q g (typical) 52 nc R G (typical).3 Ω I D (@T mb = 25 C) h A PQFN 5X6 mm Applications OR-ing MOSFET for 2V (typical)
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l dvanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage ist. = 4.8mm l Fully valanche Rated l Lead-Free escription Fifth Generation
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
More informationIRFR4105ZPbF IRFU4105ZPbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationV DSS R DS(on) max Qg 30V GS = 10V 20nC
Applications l l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very low R DS(ON) at 4.5V V GS l
More informationI, Drain-to-Source Current (A) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current (A) I, Drain-to-Source Current (A)
l dvanced Process Technology l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free escription Fifth Generation HEXFETs from International Rectifier utilize
More informationV DSS R DS(on) max (mω)
P- 94087 IRF724 HEXFET Power MOSFET Trench Technology Ultra Low On-Resistance P-Channel MOSFET vailable in Tape & Reel Ω) I V SS R S(on) max (mω) -40V 4@V GS = -0V -6.2 70@V GS = -4.5V -5.0 escription
More informationT J = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V (BR)DSS DraintoSource Breakdown Voltage 24 V V (BR)DSS / T J
PD 97263B HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G
More informationIRLMS1902. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.10Ω Top View
P - 9540C IRLMS902 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) N-Channel MOSFET 2 6 5 A V SS = 20V escription Fifth Generation HEXFET power MOSFETs from International
More informationIRF3808S IRF3808L HEXFET Power MOSFET
Typical Applications Integrated Starter Alternator 42 Volts Automotive Electrical Systems Benefits Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating G 175 C Operating Temperature
More informationAUTOMOTIVE MOSFET. 30 Pulsed Drain Current c. I DM P C = 25 C Maximum Power Dissipation 120 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET S Description
More informationIRF2804PbF IRF2804SPbF IRF2804LPbF HEXFET Power MOSFET
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free AUTOMOTIVE MOSFET G IRF2804PbF IRF2804SPbF
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 9506A IRFR8N5DPbF IRFU8N5DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 50V 0.25Ω 8A Benefits l Low Gate to Drain Charge to
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Typ. Max. Units
l Generation V Technology l Ultra Low On-Resistance l ual N-Channel Mosfet l Surface Mount l vailable in Tape & Reel l ynamic dv/dt Rating l Fast Switching l Lead-Free escription Fifth Generation HEXFETs
More informationV DSS R DS(on) max Qg (typ.) 40V GS = 10V 33nC. Parameter Typ. Max. Units Junction-to-Drain Lead g 20 C/W Junction-to-Ambient fg 50
pplications l Synchronous MOSFET for Notebook Processor Power l Secondary Synchronous Rectification for Isolated CC Converters l Synchronous Fet for NonIsolated CC Converters Benefits l Very Low R S(on)
More informationIRFR24N15D IRFU24N15D
Applications l High frequency DC-DC converters SMPS MOSFET PD - 94392 IRFR24N5D IRFU24N5D HEXFET Power MOSFET V DSS R DS(on) max I D 50V 95mΩ 24A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
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