SMPS MOSFET. V DSS R DS(on) max I D
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1 P B SMPS MOSFET IRF747 Applications l High Frequency Isolated C-C Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power HEXFET Power MOSFET V SS R S(on) max I 40V 3mΩ A Benefits l Ultra-Low Gate Impedance l Very Low R S(on) l Fully Characterized Avalanche Voltage and Current S S S G A Top View SO-8 Absolute Maximum Ratings Symbol Parameter Max. Units V S rain-source Voltage 40 V V GS Gate-to-Source Voltage ± 20 V T A = 25 C Continuous rain Current, V V T A = 70 C Continuous rain Current, V V 8.3 A I M Pulsed rain Current 83 A = 25 C Maximum Power issipationƒ 2.5 W A = 70 C Maximum Power issipationƒ.6 W Linear erating Factor 0.02 mw/ C T J, T STG Junction and Storage Temperature Range -55 to + 50 C Thermal Resistance Symbol Parameter Typ. Max. Units R θjl Junction-to-rain Lead 20 R θja Junction-to-Ambient 50 C/W Notes through are on page 8 3/25/0
2 IRF747 T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Voltage 40 V V GS = 0V, I = 250µA V (BR)SS/ T J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, I = ma V GS = V, I = A ƒ R S(on) Static rain-to-source On-Resistance mω 2 6 V GS = 4.5V, I = 8.0A ƒ V GS(th) Gate Threshold Voltage V V S = V GS, I = 250µA 20 V µa S = 32V, V GS = 0V I SS rain-to-source Leakage Current 0 V S = 32V, V GS = 0V, T J = 25 C I GSS Gate-to-Source Forward Leakage 200 V GS = 6V na Gate-to-Source Reverse Leakage -200 V GS = -6V T J = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions g fs Forward Transconductance 22 S V S = 20V, I = 8.0A Q g Total Gate Charge 2 32 I = 8.0A Q gs Gate-to-Source Charge 7.2 nc V S = 20V Q gd Gate-to-rain ("Miller") Charge V GS = 4.5V ƒ Q oss Output Gate Charge V GS = 0V, V S = 6V t d(on) Turn-On elay Time 2 V = 20V t r Rise Time 2.7 I ns = 8.0A t d(off) Turn-Off elay Time 5 R G =.8Ω t f Fall Time 4. V GS = 4.5V ƒ C iss Input Capacitance 2820 V GS = 0V C oss Output Capacitance 700 V S = 20V C rss Reverse Transfer Capacitance 46 pf ƒ =.0MHz Avalanche Characteristics Symbol Parameter Typ. Max. Units E AS Single Pulse Avalanche Energy 300 mj I AR Avalanche Current 8.0 A iode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol 2.3 (Body iode) showing the A G I SM Pulsed Source Current integral reverse 83 (Body iode) p-n junction diode. S V T J = 25 C, I S = 8.0A, V GS = 0V ƒ V S iode Forward Voltage 0.65 T J = 25 C, I S = 8.0A, V GS = 0V t rr Reverse Recovery Time 69 0 ns T J = 25 C, I F = 8.0A, V R = 20V Q rr Reverse Recovery Charge nc di/dt = 0A/µs ƒ t rr Reverse Recovery Time 73 ns T J = 25 C, I F = 8.0A, V R =20V Q rr Reverse Recovery Charge nc di/dt = 0A/µs ƒ 2
3 IRF747 I, rain-to-source Current (A) 00 0 VGS TOP V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V BOTTOM 2.7V 2.7V I, rain-to-source Current (A) 00 0 VGS TOP V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V BOTTOM 2.7V 2.7V 20µs PULSE WITH T J = 25 C V S, rain-to-source Voltage (V) 20µs PULSE WITH T J = 50 C 0. 0 V S, rain-to-source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I, rain-to-source Current (A) 0 T J = 50 C T J = 25 C V S= 25V 20µs PULSE WITH V GS, Gate-to-Source Voltage (V) R S(on), rain-to-source On Resistance (Normalized) 2.5 I = A V GS = V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3
4 C, Capacitance(pF) IRF V GS = 0V, f = MHZ C iss = C gs + C gd, C ds SHORTE C rss = C gd C oss = C ds + C gd Ciss Coss Crss V GS, Gate-to-Source Voltage (V) I = 8.0A V S = 32V V S = 20V 0 V S, rain-to-source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. rain-to-source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage I S, Reverse rain Current (A) 0 T J = 50 C T J = 25 C V GS = 0 V V S,Source-to-rain Voltage (V) I, rain Current (A) 00 0 OPERATION IN THIS AREA LIMITE BY R S(on) us 0us ms TA = 25 C ms TJ = 50 C Single Pulse 0 V S, rain-to-source Voltage (V) Fig 7. Typical Source-rain iode Forward Voltage Fig 8. Maximum Safe Operating Area 4
5 IRF747 2 V S R I, rain Current (A) T, Case Temperature ( C C) Fig a. Switching Time Test Circuit V S 90% R G V GS 4.5V Pulse Width µs uty Factor 0. %.U.T. % V GS t d(on) t r t d(off) t f + - V Fig b. Switching Time Waveforms 0 Thermal Response (Z thja ) 0. = SINGLE PULSE (THERMAL RESPONSE) Notes:. uty factor = t / t 2 2. Peak T J = P M x Z thja + TA t, Rectangular Pulse uration (sec) PM t t2 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5
6 R S (on), rain-to-source On Resistance ( Ω) R S(on), rain-to -Source On Resistance ( Ω) IRF V GS = 4.5V I = A 0.02 V GS = V I, rain Current (A) V GS, Gate -to -Source Voltage (V) Fig 2. On-Resistance Vs. rain Current Fig 3. On-Resistance Vs. Gate Voltage Current Regulator Same Type as.u.t. 2V I AS V GS.2µF 50KΩ 3mA.3µF.U.T. I G I Current Sampling Resistors + V - S V GS Fig 3a&b. Basic Gate Charge Test Circuit and Waveform tp V (B R)SS R G V S 20V V G tp Q GS L.U.T I AS 0.0Ω Q G Q G Charge 5V RIVER + - V A E AS, Single Pulse Avalanche Energy (mj) TOP BOTTOM I 3.6A 6.4A 8.0A Starting T, Junction Temperature ( J C) Fig 4a&b. Unclamped Inductive Test circuit Fig 4c. Maximum Avalanche Energy and Waveforms Vs. rain Current 6
7 IRF747 SO-8 Package etails 5 E - A - - B H 0.25 (.0) M A M e 6X θ e θ A - C - 0. (.004) A B 8X 0.25 (.0) M C A S B S NOTES:. IMENSIONING AN TOLERANCING PER ANSI Y4.5M C O NTR O LLIN G IM E NS IO N : IN CH. 3. IMENSIONS ARE SHOW N IN MILLIMETERS (INCHES). 4. O U TLIN E C O N FO R M S TO JE EC O U TLIN E M S-02A A. L 8X K x 45 5 IMENSION OES NOT INCLUE MOL PROTRUSIONS M O L PR O TRU S IO N S N O T TO E XC EE 0.25 (.006). 6 IM EN SIO N S IS TH E LEN G TH O F LE A FO R S O L ER IN G TO A S UB S TR A TE.. 6 C 8X IM INC HES MILLIMETER S MIN M AX MIN MAX A A B C E e.050 BASIC.27 BASIC e.025 BASIC BASIC H K L θ RECOMMENE FOOTPRINT 0.72 (.028 ) 8X 6.46 (.255 ).27 (.050 ) 3X.78 (.070) 8X SO-8 Part Marking 7
8 IRF747 SO-8 Tape and Reel TERMINAL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. ALL IMENSIONS ARE SHOW N IN MILLIMETERS(INC HES). 3. OUTLINE CONFORMS TO EIA-48 & EIA (2.992) MAX. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 9.4mH R G = 25Ω, I AS = 8.0A. NOTES :. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-48 & EIA (.566 ) 2.40 (.488 ) ƒ Pulse width 400µs; duty cycle 2%. When mounted on inch square copper board. ata and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORL HEAQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information. 3/0 8
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PD- 94504 IRF1312 IRF1312S IRF1312L HEXFET Power MOSFET Applications High frequency DC-DC converters Motor Control Uninterrutible Power Supplies l l l V DSS R DS(on) max I D 80V 10mΩ 95A Benefits l Low
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SMPS MOSFET PD 93918 IRF3703 Applications Synchronous Rectification Active ORing l l HEXFET Power MOSFET V DSS R DS(on) max I D 30V 2.8mΩ 2A Benefits l Ultra Low OnResistance l Low Gate Impedance to Reduce
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Benefits l Ultra-Low Gate Impedance SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for
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Typical Applications Integrated Starter Alternator 42 Volts Automotive Electrical Systems Benefits Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating G 175 C Operating Temperature
More informationHEXFET Power MOSFET V DS -20 V V GS max ±12 V. Top View. Orderable part number Package Type Standard Pack. IRLTS2242TRPbF TSOP-6 Tape and Reel 3000
P 97729A HEXFET Power MOSFET V S 2 V V GS max ±2 V 6 A R S(on) max (@V GS = 4.5V) 32 m 2 5 R S(on) max (@V GS = 2.5V) 55 m G 3 4 S Q g typ 2 nc Top View TSOP6 I (@T A = 25 C) 6.9 A Applications l Battery
More informationLinear Derating Factor 17 mw/ C V GS Gate-to-Source Voltage ± 12 V T J, T STG Junction and Storage Temperature Range -55 to C
l Ultra Low R DS(on) per Footprint Area l Low Thermal Resistance l P-Channel MOSFET l One-third Footprint of SOT-23 l Super Low Profile (
More informationI, Drain-to-Source Current (A) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current (A) I, Drain-to-Source Current (A)
l dvanced Process Technology l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free escription Fifth Generation HEXFETs from International Rectifier utilize
More informationV DSS R DS(on) max I D 80V GS = 10V 3.6A
HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 80V 73m:@ = 0V 3.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
dvanced Process Technology Ultra Low On-Resistance ynamic dv/dt Rating 75 C Operating Temperature Fast Switching Ease of Paralleling Lead-Free G IRFZ34NPbF HEXFET Power MOSFET S P - 94807 V SS = 55V R
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l Advanced Process Technology l Surface Mount (IRFZ48NS) l Low-profile through-hole (IRFZ48NL) l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs
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Applications l Synchronous Rectifier MOSFET for Isolated DC-DC Converters l Low Power Motor Drive Systems PD - 97436 IRF735PbF HEXFET Power MOSFET V DSS R DS(on) max Qg (typ.) 60V 7.8mΩ@V GS = 0V 24nC
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Min. Typ. Max. Units
HEXFET Power MOSFET l dvanced Process Technology l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free escription Fifth Generation HEXFET power MOSFETs
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Applications l Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box l Lead-Free S Benefits l Very Low R DS(on) at 4.5V l Low Gate Charge l Fully Characterized
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PD- 9385A SMPS MOSFET IRFR8N5D IRFU8N5D HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 0.25Ω 8A Benefits l Low Gate to Drain Charge to Reduce Switching Losses
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Applications l High frequency DC-DC converters Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C OSS to Simplify Design, (See App. Note
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l l l l l Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Lead-Free Description These HEXFET Power MOSFETs were designed specifically to
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Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed power switching Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche
More informationV DSS R DS(on) max Qg 30V GS = 10V 44nC
pplications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated C-C Converters P - 9737 HEXFET Power MOSFET V SS R S(on) max Qg 30V 2.8m:@V GS = V 44nC Benefits
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l Advanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description Fifth
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SMPS MOSFET PD - 95536 IRFB23N20DPbF IRFS23N20DPbF IRFSL23N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 0.Ω 24A Benefits Low Gate-to-Drain
More informationV DSS R DS(on) max Qg. 560 P C = 25 C Maximum Power Dissipation g 140 P C = 100 C Maximum Power Dissipation g Linear Derating Factor
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
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l l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) Pchannel MOSFET LeadFree escription Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing
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PD - 97390 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
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l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
More informationl Advanced Process Technology TO-220AB IRF630N
l Advanced Process Technology l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description Fifth Generation
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SMPS MOSFET PD- 95325 IRFB17N20DPbF IRFS17N20DPbF IRFSL17N20DPbF HEXFET Power MOSFET Applications l High frequency DC-DC converters l Lead-Free Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
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l l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) PChannel MOSFET LeadFree escription Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing
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SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l ZVS and High Frequency Circuit l PWM Inverters Benefits l Low Gate Charge Qg results
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Absolute Maximum Ratings SMPS MOSFET PD 93923B IRFPS40N50L Applications HEXFET Power MOSFET l Switch Mode Power Supply (SMPS) l UninterruptIble Power Supply V DSS R DS(on) typ. I D l High Speed Power Switching
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
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Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET Features and Benefits SuperFast body diode eliminates the
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Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
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PD - 97407 Applications l Optimized for UPS/Inverter Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Power Tools HEXFET Power MOSFET
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Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile (
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