Description Absolute Maximum Ratings ( TA = 25 C Unless Otherwise Noted) Symbol Maximum Units
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1 l Generation V Technology l Ultra Low On-Resistance l ual P-Channel MOSFET l Surface Mount l Very Low Gate Charge and Switching Losses l Fully valanche Rated l Lead-Free escription Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. S G S2 G2 2 3 Top View P HEXFET Power MOSFET SO-8 V SS = -30V R S(on) = 0.25Ω Recommended upgrade: IRF7306 or IRF736 Lower profile/smaller equivalent: IRF7506 bsolute Maximum Ratings ( T = 25 C Unless Otherwise Noted) Symbol Maximum Units rain-source Voltage V S -30 V Gate-Source Voltage V GS ± 20 T = 25 C -2.3 Continuous rain Current I T = 70 C -.8 Pulsed rain CurrentI M -0 Continuous Source Current (iode Conduction) I S.6 T = 25 C 2.0 Maximum Power issipation P T = 70 C W.3 Single Pulse valanche Energy E S 57 mj valanche CurrentI R -.3 Repetitive valanche Energy E R 0.20 mj Peak iode Recovery dv/dtƒ dv/dt-5.0 V/ ns Junction and Storage Temperature Range T J, T STG -55 to + 50 C Thermal Resistance Ratings Parameter Symbol Limit Units Maximum Junction-to-mbient R θj 62.5 C/W 7/6/04
2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Voltage -30 V V GS = 0V, I = -250µ V (BR)SS / T J Breakdown Voltage Temp. Coefficient 0.05 V/ C Reference to 25 C, I = -m R S(on) Static rain-to-source On-Resistance V GS = 0V, I = -.0 Ω V GS = 4.5V, I = V GS(th) Gate Threshold Voltage -.0 V V S = V GS, I = -250µ g fs Forward Transconductance -2.4 S V S = -5V, I = -2.3 I SS rain-to-source Leakage Current -2.0 V S = 24V, V GS = 0V µ -25 V S = 24V, V GS = 0V, T J = 55 C I GSS Gate-to-Source Forward Leakage 00 V GS = -20V n Gate-to-Source Reverse Leakage -00 V GS = 20V Q g Total Gate Charge 6. 2 I = -2.3 Q gs Gate-to-Source Charge nc V S = -0V Q gd Gate-to-rain ("Miller") Charge. 2.2 V GS = -0V, See Fig. 0 t d(on) Turn-On elay Time V = -0V t r Rise Time 4 28 I = -.0 ns t d(off) Turn-Off elay Time R G = 6.0Ω t f Fall Time R = 0Ω C iss Input Capacitance 90 V GS = 0V C oss Output Capacitance 20 pf V S = -5V C rss Reverse Transfer Capacitance 6 ƒ =.0MHz, See Fig. 5 Source-rain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol.3 (Body iode) showing the I SM Pulsed Source Currentintegral reverse G 6 (Body iode) p-n junction diode. S V S iode Forward Voltage V T J = 25 C, I S = -.25, V GS = 0V ƒ t rr Reverse Recovery Time ns T J = 25 C, I F = -.25 Q rr Reverse RecoveryCharge 3 62 nc di/dt = -00/µs ƒ Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. ) Starting T J = 25 C, L = 67mH R G = 25Ω, I S = -.3. ƒ I S -.3, di/dt -92/µs, V V (BR)SS, T J 50 C Pulse width 300µs; duty cycle 2%. Surface mounted on FR-4 board, t 0sec.
3 -I, rain-to-source Current () 00 0 VGS TOP - 5V - 0V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V -3.0V -I, rain-to-source Current () 00 0 VGS TOP - 5V - 0V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V -3.0V 20µs PULSE WITH 0. T J = 25 C V S, rain-to-source Voltage (V) 20µs PULSE WITH 0. T J = 50 C V S, rain-to-source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I, rain-to-source Current () 0 T J = 25 C T J= 50 C V S = -0V 20µs PULSE WITH V, Gate-to-Source Voltage (V) GS -I S, Reverse rain Current () 0 T J = 50 C T J = 25 C V GS = 0V V S, Source-to-rain Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-rain iode Forward Voltage
4 R S(on), rain-to-source On Resistance (Normalized) I = -.0 V GS = -0V T J, Junction Temperature ( C) Fig 5. Normalized On-Resistance Vs. Temperature R S(on), rain-to-source On Resistance ( Ω ) V GS = -4.5V I, rain Current () V GS = -0V Fig 6. Typical On-Resistance Vs. rain Current R S(on), rain-to-source On Resistance ( Ω ) I = V GS, Gate-to-Source Voltage (V) E S, Single Pulse valanche Energy (mj) I TOP BOTTOM Starting T, Junction Temperature ( J C) Fig 7. Typical On-Resistance Vs. Gate Voltage Fig 8. Maximum valanche Energy Vs. rain Current
5 C, Capacitance (pf) V GS = 0V, f = MHz C iss = C gs + C gd, C ds SHORTE C rss = Cgd C oss = C ds + Cgd C iss C oss C rss -V GS, Gate-to-Source Voltage (V) I = -2.3 V S =-0V V S, rain-to-source Voltage (V) Q G, Total Gate Charge (nc) Fig 9. Typical Capacitance Vs. rain-to-source Voltage Fig 0. Typical Gate Charge Vs. Gate-to-Source Voltage 00 Thermal Response (Z thj ) PM 0.0 t SINGLE PULSE t2 (THERML RESPONSE) Notes:. uty factor = t / t 2 2. Peak T J= P M x Z thj + T t, Rectangular Pulse uration (sec) Fig. Maximum Effective Transient Thermal Impedance, Junction-to-mbient
6 SO-8 Package Outline imensions are shown in milimeters (inches) E 6 6X e B H 0.25 [.00] INCHES IM MIN MX b MILLIMETERS MIN MX c E e.050 BSIC.27 BSIC e.025 BSIC BSIC H K L y e C y K x 45 8X b 0.25 [.00] C B 0.0 [.004] 8X L 7 8X c NOT ES :. IMENSIONING & TOLERNCING PER SME Y4.5M CONTROLLING IMENS ION: MILLIMETER 3. IMENSIONS RE SHOWN IN MILLIMETERS [INCHES ]. 4. OUTLINE CONFORMS TO JEEC OUTLINE MS IMENSION OES NOT INCLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXCEE 0.5 [.006]. 6 IMENSION OES NOT INCLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXCEE 0.25 [.00]. 7 IMENSION IS THE LENGTH OF LE FOR SOLERING TO S UBS TRTE [.255] 3X.27 [.050] F OOT PRINT 8X 0.72 [.028] 8X.78 [.070] SO-8 Part Marking Information (Lead-Free) EXMPLE: THIS IS N IRF70 (MOSFET) INTERNTIONL RECTIFIER LOGO XXXX F70 TE COE (YWW) P = ES IGNTES LE-FREE PROUCT (OPTIONL) Y = LST IGIT OF T HE YER WW = WEE K = S S EMB LY S ITE COE LOT COE PRT NUMBER
7 SO-8 Tape and Reel imensions are shown in milimeters (inches) TERMINL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. LL IMENSIONS RE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EI-48 & EI (2.992) MX. NOTES :. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI-48 & EI (.566 ) 2.40 (.488 ) ata and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR s Web site. IR WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, US Tel: (30) TC Fax: (30) Visit us at for sales contact information.07/04
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l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l dvanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l PChannel l Fully valanche Rated l LeadFree Description Fifth Generation HEXFETs from International Rectifier
More informationHEXFET Power MOSFET V DSS = -12V. R DS(on) = 0.05Ω. l Ultra Low On-Resistance l P-Channel MOSFET. Thermal Resistance.
l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (
More informationPRELIMINARY. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
dvanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated PRELIMINRY PD 9.383 IRFP064N HEXFET Power MOSFET V DSS = 55V R DS(on)
More informationPRELIMINARY. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD 9.278B PRELIMINRY IRFN dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated HEXFET Power MOSFET V DSS = 55V R DS(on) = 0.02Ω I D = 72 Description
More informationIRF7342. HEXFET Power MOSFET V DSS = -55V. R DS(on) = 0.105Ω SO-8. Thermal Resistance. 1 PD Top View
l Generation V Technology l Ultra Low On-Resistance l Dual P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fifth Generation HEXFETs from
More informationIRLIZ44N. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 0.022Ω I D = 30A. Description. Thermal Resistance PD A TO-220 FULLPAK
l Logic-Level Gate rive l dvanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage ist. = 4.8mm l Fully valanche Rated escription Fifth Generation HEXFETs
More informationHEXFET Power MOSFET for DC-DC Converters. Absolute Maximum Ratings Parameter Symbol IRF7828PbF Units Drain-Source Voltage V DS
P-95214A EXFET Power MOSFET for C-C Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core C-C Converters Low Conduction Losses Low Switching Losses Lead-Free S S 1 2 8 7 A escription This
More informationV DSS = -60V. R DS(on) = 0.50Ω I D = -1.8A SOT-223. Absolute Maximum Ratings. Thermal Resistance. HEXFET Power MOSFET
HEXFET Power MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Repetitive Avalanche Rated l P-Channel l Fast Switching l Ease of Paralleling l Lead-Free Description Third Generation
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l dvanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l PChannel l Fully valanche Rated l LeadFree Description Fifth Generation HEXFETs from International Rectifier
More informationIRLMS6702. HEXFET Power MOSFET V DSS = -20V. R DS(on) = 0.20Ω. Generation V Technology Micro6 Package Style Ultra Low Rds(on) P-Channel MOSFET
P 9.44B IRLMS6702 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low Rds(on) PChannel MOSFET 2 6 5 V SS = 20V escription Fifth Generation HEXFETs from International Rectifier
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Typical R S (on) (mω) V GS, Gate-to-Source Voltage (V) l RoHs Compliant Containing No Lead and Bromide l Low Profile (
More informationIRF7700GPbF. HEXFET Power MOSFET V DSS R DS(on) max I D
l Ultra Low On-Resistance l P-Channel MOSFET l Very Small SOIC Package l Low Profile (
More informationMicro3. 1
P - 9257E IRLML2402 HEXFET Power MOSFET Generation V Technoogy Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (
More informationIRL3102. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.013Ω I D = 61A PRELIMINARY
l l l l dvanced Process Technology Optimized for 4.5V-7.V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Description These HEXFET Power MOSFETs were designed specifically to meet the demands
More informationIRF6612PbF IRF661TRPbF
Typical R S(on) (mω) RoHs Compliant Lead-Free (Qualified up to 260 C Reflow) pplication Specific MOSFETs Ideal for CPU Core C-C Converters Low Conduction Losses High Cdv/dt Immunity Low Profile (
More informationIRLL3303. HEXFET Power MOSFET V DSS = 30V. R DS(on) = 0.031Ω I D = 4.6A SOT-223. Thermal Resistance PD C
l Surface Mount l ynamic dv/dt Rating l LogicLevel Gate rive l Fast Switching l Ease of Paralleling l dvanced Process Technology l Ultra Low OnResistance escription Fifth Generation HEXFETs from International
More informationIRFS4227PbF IRFSL4227PbF
Features l Advanced Process Technology l Key Parameters Optimized for PP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce Power issipation in PP Sustain, Energy Recovery
More informationTO-220AB contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings
l LogicLevel Gate rive l dvanced Process Technology l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier
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SMPS MOSFET PD - 94445 HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 85mΩ@V GS = V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l
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PD - 95258A IRFL435PbF HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 85mW@V GS = V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l
More informationA I DM Pulsed Drain Current 10 P C = 25 C Power Dissipation 2.0
l Adavanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fourth Generation HEXFETs
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G PD - 94822 IRFZ44EPbF HEXFET Power MOSFET D S V DSS = 60V R DS(on) = 0.023Ω
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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Seventh Generation HEXFET power
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SMPS MOSFET PD - 9506A IRFR8N5DPbF IRFU8N5DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 50V 0.25Ω 8A Benefits l Low Gate to Drain Charge to
More informationTO-220AB low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
More informationPRELIMINARY. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l l l l l dvanced Process Technology ynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier utilize advanced
More informationPRELIMINARY. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l dvanced Process Technology l Ultra Low OnResistance l Surface Mount l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated escription PRELIMINRY Fifth Generation HEXFETs
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Typical R S (on) (mω) V GS, Gate-to-Source Voltage (V) l RoHS Compliant l Lead-Free (Qualified up to 260 C Reflow) l pplication Specific MOSFETs l Ideal for CPU Core C-C Converters l Low Conduction Losses
More informationStorage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l Logic-Level Gate Drive l Ultra Low On-Resistance l Surface Mount (IRLR33) l Straight Lead (IRLU33) l dvanced Process Technology l Fast Switching l Fully valanche Rated Description Fifth Generation HEXFETs
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IGITL UIO MOSFET Features Latest MOSFET Silicon technology Key parameters optimized for Class- audio amplifier applications Low R S(on) for improved efficiency Low Q g for better TH and improved efficiency
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l l l l l Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Lead-Free Description These HEXFET Power MOSFETs were designed specifically to
More informationHEXFET Power MOSFET V DSS = 40V. R DS(on) = Ω I D = 130A
l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
More informationAUTOMOTIVE GRADE V (BR)DSS -30V. R DS(on) typ Ω. max Ω I D -4.9A SO-8. Thermal Resistance. Top View
UTOMOTIVE GRDE UIRF736Q Features l dvanced Planar Technology l Low On-Resistance l Logic Level Gate Drive l Dual P Channel MOSFET l Surface Mount l vailable in Tape & Reel l 50 C Operating Temperature
More informationApplications DSS 150V RDS(on) typ. 12m max. 15m Benefits 85A Absolute Maximum Ratings Symbol Parameter Max. Units
P - 975C IRFS432PbF IRFSL432PbF Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits
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SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l
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