Linear Derating Factor 0.02 W/ C V GS Gate-to-Source Voltage ± 20 V T J, T STG Junction and Storage Temperature Range -55 to C

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1 P A Si4435Y HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel S S S A V SS = -30V G 4 5 R S(on) = 0.020Ω escription These P-channel HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. Top View The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. SO-8 Absolute Maximum Ratings Parameter Max. Units V S rain- Source Voltage -30 V T A = 25 C Continuous rain Current, V -0V -8.0 T A = 70 C Continuous rain Current, V -0V -6.4 A I M Pulsed rain Current -50 A = 25 C Power issipation 2.5 A = 70 C Power issipation.6 W Linear erating Factor 0.02 W/ C V GS Gate-to-Source Voltage ± 20 V T J, T STG Junction and Storage Temperature Range -55 to + 50 C Thermal Resistance Parameter Max. Units R θja Maximum Junction-to-Ambientƒ 50 C/W 0/4/99

2 Si4435Y Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Voltage -30 V V GS = 0V, I = -250µA V (BR)SS / T J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, I = -ma R S(on) Static rain-to-source On-Resistance V GS = -0V, I = -8.0A Ω V GS = -4.5V, I = -5.0A V GS(th) Gate Threshold Voltage -.0 V V S = V GS, I = -250µA g fs Forward Transconductance S V S = -5V, I = -8.0A I SS rain-to-source Leakage Current -0 V S = -24V, V GS = 0V µa -0 V S = -5V, V GS = 0V, T J = 70 C I GSS Gate-to-Source Forward Leakage -00 V GS = -20V na Gate-to-Source Reverse Leakage 00 V GS = 20V Q g Total Gate Charge I = -4.6A Q gs Gate-to-Source Charge 7. nc V S = -5V Q gd Gate-to-rain ("Miller") Charge 8.0 V GS = -0V t d(on) Turn-On elay Time 6 24 V = -5V, V GS = -0V t r Rise Time 76 0 I = -.0A ns t d(off) Turn-Off elay Time R G = 6.0Ω t f Fall Time R = 5Ω C iss Input Capacitance 2320 V GS = 0V C oss Output Capacitance 390 pf V S = -5V C rss Reverse Transfer Capacitance 270 ƒ =.0kHz Source-rain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol -2.5 (Body iode) showing the A I SM Pulsed Source Current integral reverse G -50 (Body iode) p-n junction diode. S V S iode Forward Voltage -.2 V T J = 25 C, I S = -2.5A, V GS = 0V t rr Reverse Recovery Time 34 5 ns T J = 25 C, I F = -2.5A Q rr Reverse Recovery Charge nc di/dt = -00A/µs Notes: Repetitive rating; pulse width limited by max. junction temperature. ƒ Surface mounted on FR-4 board, t 5sec. Pulse width 300µs; duty cycle 2%. 2

3 Si4435Y -I, rain-to-source Current (A) VGS TOP -5V -0V -7.0V -5.5V -4.5V -4.0V -3.5V BOTTOM -2.7V -2.70V 20µs PULSE WITH T J = 25 C V S, rain-to-source Voltage (V) -I, rain-to-source Current (A) VGS TOP -5V -0V -7.0V -5.5V -4.5V -4.0V -3.5V BOTTOM -2.7V -2.70V 20µs PULSE WITH 0. T J = 50 C V S, rain-to-source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics -I, rain-to-source Current (A) 00 0 T J = 25 C T J = 50 C V S= -5V 20µs PULSE WITH V GS, Gate-to-Source Voltage (V) R S(on), rain-to-source On Resistance (Normalized) 2.0 I = -8.0A V GS = -0V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3

4 Si4435Y C, Capacitance (pf) 3500 VGS = 0V, f = MHz Ciss = Cgs + Cgd, C ds SHORTE 3000 Crss = Cgd Coss = Cds + Cgd 2500 C iss C oss C rss V S, rain-to-source Voltage (V) -V GS, Gate-to-Source Voltage (V) I = -4.6A V S =-5V Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. rain-to-source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage OPERATION IN THIS AREA LIMITE BY R S(on) -I S, Reverse rain Current (A) 0 T J = 50 C T J = 25 C V GS = 0 V V S,Source-to-rain Voltage (V) -I I, rain Current (A) us ms 0ms TA = 25 C TJ = 50 C Single Pulse V S, rain-to-source Voltage (V) Fig 7. Typical Source-rain iode Forward Voltage Fig 8. Maximum Safe Operating Area 4

5 -V GS(th), Variace ( V ) Si4435Y I, rain Current (A) Id = -250µA T, Case Temperature ( C C) T J, Temperature ( C ) Fig 9. Maximum rain Current Vs. Case Temperature Fig 0. Typical Vgs(th) Variance Vs. Juction Temperature 00 Thermal Response (Z thja ) 0 = t 0. SINGLE PULSE t2 (THERMAL RESPONSE) Notes:. uty factor = t / t 2 2. Peak T J = P M x Z thja + TA t, Rectangular Pulse uration (sec) PM Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5

6 R S ( on), rain-to-source On Resistance ( Ω ) Si4435Y R S(on), rain-to -Source Voltage ( Ω ) VGS= - 4.5V 0.04 Id = -8.0A VGS = -0V V GS, Gate -to -Source Voltage ( V ) -I, rain Current ( A ) Fig 2. Typical On-Resistance Vs. Gate Voltage Fig 3. Typical On-Resistance Vs. rain Current 6

7 Si4435Y SO-8 Package etails 5 E - A - - B H 0.25 (.00) M A M e 6X e K x 45 θ A - C (.004) L 6 B 8X A 8X 0.25 (.00) M C A S B S NOTES:. IMENSIONING AN TOLERANCING PER ANSI Y4.5M CONTROLLING IMENSION : INCH. 3. IMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 4. OUTLINE CONFORMS TO JEEC OUTLINE MS-02AA. 5 IMENSION OES NOT INCLUE MOL PROTRUSIONS MOL PROTRUSIONS NOT TO EXCEE 0.25 (.006). 6 IMENSIONS IS THE LENGTH OF LEA FOR SOLERING TO A SUBSTRATE.. C 8X IM INCHES MILLIMETERS MIN MAX MIN MAX A A B C E e.050 BASIC.27 BASIC e.025 BASIC BASIC H K L θ RECOMMENE FOOTPRINT 0.72 (.028 ) 8X 6.46 (.255 ).27 (.050 ) 3X.78 (.070) 8X SO-8 Part Marking 7

8 Si4435Y SO-8 Tape and Reel T ER M IN AL N U M B E R 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. ALL IMENSIONS ARE SHOW N IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-48 & EIA (2.992) MAX. NOTES :. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-48 & EIA (.566 ) 2.40 (.488 ) WORL HEAQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (30) IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: IR CANAA: 5 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) IR GERMANY: Saalburgstrasse 57, 6350 Bad Homburg Tel: IR ITALY: Via Liguria 49, 007 Borgaro, Torino Tel: IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 7 Tel: IR SOUTHEAST ASIA: Kim Seng Promenade, Great World City West Tower, 3-, Singapore Tel: IR TAIWAN:6 Fl. Suite. 207, Sec. 2, Tun Haw South Road, Taipei, 0673, Taiwan Tel: ata and specifications subject to change without notice. 0/99 8

Linear Derating Factor 0.02 W/ C V GS Gate-to-Source Voltage ± 20 V T J, T STG Junction and Storage Temperature Range -55 to C

Linear Derating Factor 0.02 W/ C V GS Gate-to-Source Voltage ± 20 V T J, T STG Junction and Storage Temperature Range -55 to C 查询供应商捷多邦, 专业 PCB 打样工厂,24 小时加急出货 P- 94243 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel S S S 2 3 8 7 6 A V SS = -30V G 4 5 R S(on) = 0.020Ω