IRF V, N-CHANNEL

Size: px
Start display at page:

Download "IRF V, N-CHANNEL"

Transcription

1 PD REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) IRF V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF V 0.20Ω 25A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. TO-3 Features: n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling Absolute Maximum Ratings Parameter VGS = 0V, TC = 25 C Continuous Drain Current 25 VGS = 0V, TC = 100 C Continuous Drain Current 16 IDM Pulsed Drain Current ➀ 100 TC = 25 C Max. Power Dissipation 300 W Units Linear Derating Factor 2.4 W/ C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy ➁ 980 mj IAR Avalanche Current ➀ 25 A EAR Repetitive Avalanche Energy ➀ 30 mj dv/dt Peak Diode Recovery dv/dt ➂ 4.0 V/ns TJ Operating Junction -55 to 150 TSTG Storage Temperature Range Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) o C Weight 11.5(typical) g A For footnotes refer to the last page /24/01

2 Electrical Tj = 25 C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 400 V VGS = 0V, ID = 1.0mA BVDSS/ TJ Temperature Coefficient of Breakdown 0.46 V/ C Reference to 25 C, ID = 1.0mA Voltage RDS(on) Static Drain-to-Source On-State 0.20 VGS = 10V, ID = 16A ➃ Ω Resistance 0.23 VGS = 10V, ID =25A ➃ VGS(th) Gate Threshold Voltage V VDS = VGS, ID =250µA gfs Forward Transconductance 14 S ( ) VDS > 15V, IDS = 16A ➃ IDSS Zero Gate Voltage Drain Current 25 VDS=320V, VGS=0V 250 µa VDS =320V VGS = 0V, TJ = 125 C IGSS Gate-to-Source Leakage Forward 100 VGS = 20V na IGSS Gate-to-Source Leakage Reverse -100 VGS = -20V Qg Total Gate Charge VGS = 10V, ID =25A Qgs Gate-to-Source Charge nc VDS = 200V Qgd Gate-to-Drain ( Miller ) Charge td(on) Turn-On Delay Time 33 VDD =200V, ID =25A, t r Rise Time 140 RG =2.35Ω ns td(off) Turn-Off Delay Time 120 tf Fall Time 99 LS + LD Total Inductance 6.1 nh Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package) Ciss Input Capacitance 4200 VGS = 0V, VDS = 25V Coss Output Capacitance 900 pf f = 1.0MHz Crss Reverse Transfer Capacitance 400 Ω Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) 25 ISM Pulse Source Current (Body Diode) ➀ 100 A VSD Diode Forward Voltage 1.8 V Tj = 25 C, IS = 25A, VGS = 0V ➃ trr Reverse Recovery Time 1000 ns Tj = 25 C, IF = 25A, di/dt 100A/µs QRR Reverse Recovery Charge 16 µc VDD 50V ➃ ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction to Case 0.42 C/W RthJA Junction to Ambient 30 Typical socket mount For footnotes refer to the last page 2

3 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3

4 13 a& b Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4

5 V DS R D R G V GS D.U.T. + - V DD 10V Pulse Width 1 µs Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit V DS 90% Fig 9. Maximum Drain Current Vs. Case Temperature 10% V GS t d(on) t r t d(off) t f Fig 10b. Switching Time Waveforms Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5

6 15V V DS L DRIVER R G 10V 20V tp D.U.T I AS 0.01Ω + - V DD A Fig 12a. Unclamped Inductive Test Circuit tp V (BR)DSS Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ Q G 12V.2µF.3µF 10 V Q GS Q GD D.U.T. + V - DS V G V GS 3mA Charge I G I D Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6

7 Foot Notes: ➀ Repetitive Rating; Pulse width limited by ➂ ISD 25A, di/dt 170A/µs, maximum junction temperature. VDD 400V, TJ 150 C ➁ VDD = 50V, starting TJ = 25 C, Suggested RG =2.35 Ω Peak IL = 25A, ➃ Pulse width 300 µs; Duty Cycle 2% Case Outline and Dimensions TO-204AE (Modified TO-3) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: (0) IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) IR GERMANY: Saalburgstrasse 157, Bad Homburg Tel: (0) IR ITALY: Via Liguria 49, Borgaro, Torino Tel: IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0) IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore Tel: (0) IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, Tel: 886-(0) Data and specifications subject to change without notice. 1/01 7

IRF9240 THRU-HOLE (TO-204AA/AE) Absolute Maximum Ratings. Features: 1 PD REPETITIVE AVALANCHE AND dv/dt RATED.

IRF9240 THRU-HOLE (TO-204AA/AE) Absolute Maximum Ratings. Features:  1 PD REPETITIVE AVALANCHE AND dv/dt RATED. PD - 90420 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) IRF9240 200V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF9240-200V 0.5Ω -11A The HEXFET technology

More information

IRFF110 JANTXV2N V, N-CHANNEL. Absolute Maximum Ratings. Features: 1 PD C. REPETITIVE AVALANCHE AND dv/dt RATED

IRFF110 JANTXV2N V, N-CHANNEL. Absolute Maximum Ratings. Features:  1 PD C. REPETITIVE AVALANCHE AND dv/dt RATED PD - 90423C REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) Product Summary Part Number BVDSS RDS(on) ID IRFF110 100V.60Ω 3.5A IRFF110 JANTX2N6782 JANTXV2N6782 REF:MIL-PRF-19500/556

More information

IRFF9130 JANS2N6849 JANTXV2N V, P-CHANNEL. Absolute Maximum Ratings. Features: 1 PD D. REPETITIVE AVALANCHE AND dv/dt RATED

IRFF9130 JANS2N6849 JANTXV2N V, P-CHANNEL. Absolute Maximum Ratings. Features:   1 PD D. REPETITIVE AVALANCHE AND dv/dt RATED PD - 90550D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) Product Summary Part Number BVDSS RDS(on) ID IRFF9130-100V 0.30Ω -6.5A IRFF9130 JANTX2N6849 JANTXV2N6849 JANS2N6849

More information

IRFF420 JANTX2N6794 JANTXV2N6794 REF:MIL-PRF-19500/ V, N-CHANNEL

IRFF420 JANTX2N6794 JANTXV2N6794 REF:MIL-PRF-19500/ V, N-CHANNEL PD - 90429D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) IRFF420 JANTX2N6794 JANTXV2N6794 REF:MIL-PRF-19500/555 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on)

More information

IRF9230 JANTXV2N6806

IRF9230 JANTXV2N6806 PD-90548D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE -TO-204AE (TO-3) Product Summary Part Number BVDSS RDS(on) ID IRF9230-200V 0.80 Ω -6.5A IRF9230 JANTX2N6806 JANTXV2N6806 REF:MIL-PRF-19500/562

More information

HEXFET MOSFET TECHNOLOGY

HEXFET MOSFET TECHNOLOGY PD-91551D POWER MOSFET SURFACE MOUNT(SMD-1) Product Summary Part Number RDS(on) ID IRFN350 0.315 Ω 14A IRFN350 JANTX2N7227U JANTXV2N7227U REF:MIL-PRF-19500/592 400V, N-CHANNEL HEXFET MOSFET TECHNOLOGY

More information

IRFE420 JANTX2N6794U JANTXV2N6794U REF:MIL-PRF-19500/ V, N-CHANNEL

IRFE420 JANTX2N6794U JANTXV2N6794U REF:MIL-PRF-19500/ V, N-CHANNEL PD - 93986A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) IRFE420 JANTX2N6794U JANTXV2N6794U REF:MIL-PRF-19500/555 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on)

More information

n Low RDS(on) n Avalanche Energy Ratings n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Surface Mount n Light Weight

n Low RDS(on) n Avalanche Energy Ratings n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Surface Mount n Light Weight PD - 9472 HEXFET POWER MOSFET SURFACE MOUNT (SMD-.5) IRL7NJ382 2V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRL7NJ382 2V.85 22A* Seventh Generation HEXFET power MOSFETs from International

More information

SURFACE MOUNT (SMD-1) 100V, P-CHANNEL. Absolute Maximum Ratings. Product Summary

SURFACE MOUNT (SMD-1) 100V, P-CHANNEL. Absolute Maximum Ratings. Product Summary PD-9454A HEXFET POWER MOSFET SURFACE MOUNT (SMD-) IRF5N52 V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5N52 -V.6Ω -3A Fifth Generation HEXFET power MOSFETs from International Rectifier

More information

IRHF7230 JANSR2N V, N-CHANNEL REF: MIL-PRF-19500/601 RAD-Hard HEXFET TECHNOLOGY RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)

IRHF7230 JANSR2N V, N-CHANNEL REF: MIL-PRF-19500/601 RAD-Hard HEXFET TECHNOLOGY RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) PD - 90672E RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHF7230 100K Rads (Si) 0.35Ω 5.5A JANSR2N7262 IRHF3230 300K Rads (Si)

More information

IRHF57034 THRU-HOLE (TO-39) REF: MIL-PRF-19500/701. Absolute Maximum Ratings PD-93791D

IRHF57034 THRU-HOLE (TO-39) REF: MIL-PRF-19500/701. Absolute Maximum Ratings PD-93791D PD-9379D RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHF5734 K Rads (Si).48Ω 2A* JANSR2N7492T2 IRHF5334 3K Rads (Si).48Ω 2A*

More information

IRFE230 JANTXV2N6798U SURFACE MOUNT (LCC-18) 200V, N-CHANNEL REF:MIL-PRF-19500/557. Absolute Maximum Ratings PD-91715C.

IRFE230 JANTXV2N6798U SURFACE MOUNT (LCC-18) 200V, N-CHANNEL REF:MIL-PRF-19500/557. Absolute Maximum Ratings PD-91715C. PD-975C REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-8) Product Summary Part Number BVDSS RDS(on) ID IRFE230 200V 0.40Ω 5.5A IRFE230 JANTX2N6798U JANTXV2N6798U REF:MIL-PRF-9500/557

More information

Parameter Min. Typ. Max. Units Conditions. µa DS = 200V, V GS = 0V 250 V DS = 160V, V GS = 0V, T J = 150 C

Parameter Min. Typ. Max. Units Conditions. µa DS = 200V, V GS = 0V 250 V DS = 160V, V GS = 0V, T J = 150 C HEXFET Power MOSFET V DSS = 200V R DS(on) = 0.5Ω Description I D = 8A Absolute Maximum Ratings Parameter Max. Units I D @ T C = 25 C Continuous Drain Current, V GS @ V 8 I D @ T C = 0 C Continuous Drain

More information

HEXFET MOSFET TECHNOLOGY

HEXFET MOSFET TECHNOLOGY PD-90712C POWER MOSFET THRU-HOLE (TO-254) IRFM360 400V, N-CHNNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM360 0.20 Ω 23 HEXFET MOSFET technology is the key to International Rectifier

More information

SMPS MOSFET. V DSS Rds(on) max I D

SMPS MOSFET. V DSS Rds(on) max I D Applications l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD-93772A HEXFET Power MOSFET V DSS Rds(on) max I D 400V.0Ω 5.5A Benefits l Low Gate

More information

IRHF57133SE THRU-HOLE (TO-39) REF: MIL-PRF-19500/706. Absolute Maximum Ratings

IRHF57133SE THRU-HOLE (TO-39) REF: MIL-PRF-19500/706. Absolute Maximum Ratings PD - 94334B RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) IRHF5733SE JANSR2N7497T2 3V, N-CHANNEL REF: MIL-PRF-95/76 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number

More information

POWER MOSFET SURFACE MOUNT (SMD-1) 200V, N-CHANNEL. Absolute Maximum Ratings PD-94236C

POWER MOSFET SURFACE MOUNT (SMD-1) 200V, N-CHANNEL. Absolute Maximum Ratings PD-94236C PD-94236C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-) IRHN5725SE 2V, N-CHANNEL 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHN5725SE K Rads (Si).6Ω 3A SMD- International

More information

1 = D 2 = S 3 = S 4 = G

1 = D 2 = S 3 = S 4 = G l Ultra Low On-Resistance l P-Channel MOSFET l Very Small SOIC Package l Low Profile (

More information

SMPS MOSFET. V DSS R DS(on) max I D

SMPS MOSFET. V DSS R DS(on) max I D Applications l High frequency DC-DC converters SMPS MOSFET PD - 9399A IRFR9N20D IRFU9N20D HEXFET Power MOSFET V DSS R DS(on) max I D 200V 0.38Ω 9.4A Benefits Low Gate-to-Drain Charge to Reduce Switching

More information

IRHG V, Quad N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036) PD-94432C. 1 TECHNOLOGY. Product Summary MO-036AB

IRHG V, Quad N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036) PD-94432C.  1 TECHNOLOGY. Product Summary MO-036AB PD-94432C RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-36) Product Summary Part Number Radiation Level RDS(on) ID IRHG57 K Rads (Si).29Ω.6A IRHG53 3K Rads (Si).29Ω.6A IRHG54 5K Rads (Si).29Ω.6A IRHG58

More information

SMPS MOSFET. V DSS Rds(on) max I D

SMPS MOSFET. V DSS Rds(on) max I D Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD- 92005 HEXFET Power MOSFET V DSS Rds(on) max I D 400V 0.55Ω A Benefits l Low

More information

2N7630M2 THRU-HOLE (14-LEAD FLAT PACK) TECHNOLOGY. Product Summary

2N7630M2 THRU-HOLE (14-LEAD FLAT PACK) TECHNOLOGY. Product Summary PD-9736 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (4-LEAD FLAT PACK) 2N763M2 IRHLA797Z4 6V, Quad P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHLA797Z4 K Rads

More information

VGS = 4.5V, TC = 25 C Continuous Drain Current 2.6 A

VGS = 4.5V, TC = 25 C Continuous Drain Current 2.6 A PD-9726A RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (LCC-28) Product Summary Part Number Radiation Level RDS(on) ID IRHLQ7724 K Rads (Si).Ω 2.6A IRHLQ7324 3K Rads (Si).Ω 2.6A International

More information

IRHNM57110 SURFACE MOUNT (SMD-0.2) REF: MIL-PRF-19500/743. Product Summary. Absolute Maximum Ratings PD-97192C

IRHNM57110 SURFACE MOUNT (SMD-0.2) REF: MIL-PRF-19500/743. Product Summary. Absolute Maximum Ratings PD-97192C PD-9792C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.2) Product Summary IRHNM57 JANSR2N753U8 V, N-CHANNEL REF: MIL-PRF-95/743 5 TECHNOLOGY Part Number Radiation Level RDS(on) ID QPL Part Number

More information

IRHNJ67130 SURFACE MOUNT (SMD-0.5) REF: MIL-PRF-19500/746. Absolute Maximum Ratings PD-95816D. Features: n Low RDS(on) n Fast Switching

IRHNJ67130 SURFACE MOUNT (SMD-0.5) REF: MIL-PRF-19500/746. Absolute Maximum Ratings PD-95816D. Features: n Low RDS(on) n Fast Switching PD-9586D RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) IRHNJ673 JANSR2N7587U3 V, N-CHANNEL REF: MIL-PRF-95/746 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number

More information

IRHNJ57133SE SURFACE MOUNT (SMD-0.5) REF: MIL-PRF-19500/704 TECHNOLOGY. Absolute Maximum Ratings

IRHNJ57133SE SURFACE MOUNT (SMD-0.5) REF: MIL-PRF-19500/704 TECHNOLOGY. Absolute Maximum Ratings PD - 94294C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) IRHNJ5733SE JANSR2N7485U3 3V, N-CHANNEL REF: MIL-PRF-95/74 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part

More information

D-Pak I-Pak up to 1.5 watts are possible in typical surface mount

D-Pak I-Pak up to 1.5 watts are possible in typical surface mount l Surface Mount (IRFR2407) l Straight Lead (IRFU2407) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated Description Seventh Generation HEXFET Power MOSFETs from

More information

IRHNJ67234 SURFACE MOUNT (SMD-0.5) PD-97197C REF: MIL-PRF-19500/746. Absolute Maximum Ratings. Product Summary

IRHNJ67234 SURFACE MOUNT (SMD-0.5) PD-97197C REF: MIL-PRF-19500/746. Absolute Maximum Ratings. Product Summary PD-9797C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNJ67234 K Rads (Si).2Ω 2.4A JANSR2N7593U3 IRHNJ63234 3K Rads (Si).2Ω

More information

2N7620M2 THRU-HOLE (14-LEAD FLAT PACK) TECHNOLOGY. Product Summary

2N7620M2 THRU-HOLE (14-LEAD FLAT PACK) TECHNOLOGY. Product Summary PD-9735 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (4-LEAD FLAT PACK) Product Summary Part Number Radiation Level RDS(on) ID IRHLA77Z4 K Rads (Si).6Ω.8A IRHLA73Z4 3K Rads (Si).6Ω.8A 2N762M2

More information

IRHNM SURFACE MOUNT (SMD-0.2) REF: MIL-PRF-19500/749. Product Summary. Absolute Maximum Ratings

IRHNM SURFACE MOUNT (SMD-0.2) REF: MIL-PRF-19500/749. Product Summary. Absolute Maximum Ratings PD-9779B RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.2) Product Summary IRHNM597 JANSR2N756U8 V, P-CHANNEL REF: MIL-PRF-95/749 5 TECHNOLOGY Part Number Radiation Level RDS(on) ID QPL Part Number

More information

2N7624U3 LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) 60V, P-CHANNEL TECHNOLOGY. Absolute Maximum Ratings

2N7624U3 LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) 60V, P-CHANNEL TECHNOLOGY. Absolute Maximum Ratings PD-9732 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.5) 2N7624U3 IRHLNJ79734 6V, P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHLNJ79734 K Rads (Si).72Ω

More information

2N7606U3 LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) 60V, N-CHANNEL TECHNOLOGY. Absolute Maximum Ratings

2N7606U3 LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) 60V, N-CHANNEL TECHNOLOGY. Absolute Maximum Ratings PD-973B RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.5) Product Summary Part Number Radiation Level RDS(on) ID IRHLNJ7734 K Rads (Si).35Ω 22A* IRHLNJ7334 3K Rads (Si).35Ω 22A* 2N766U3

More information

IRHNJ V, N-CHANNEL POWER MOSFET SURFACE MOUNT (SMD-0.5) REF: MIL-PRF-19500/703. Absolute Maximum Ratings. Product Summary

IRHNJ V, N-CHANNEL POWER MOSFET SURFACE MOUNT (SMD-0.5) REF: MIL-PRF-19500/703. Absolute Maximum Ratings. Product Summary PD-93754G RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNJ573 K Rads (Si).6Ω 22A* JANSR2N748U3 IRHNJ533 3K Rads (Si).6Ω

More information

SMPS MOSFET. V DSS R DS(on) max I D

SMPS MOSFET. V DSS R DS(on) max I D PD - 93935B SMPS MOSFET IRFR3708 IRFU3708 Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer

More information

TECHNOLOGY SURFACE MOUNT (LCC-6) 0.89A -0.65A 0.89A -0.65A

TECHNOLOGY SURFACE MOUNT (LCC-6) 0.89A -0.65A 0.89A -0.65A 2N7632UC IRHLUC767Z4 RADIATION HARDENED 6V, Combination N-P-CHANNEL LOGIC LEVEL POWER MOSFET TECHNOLOGY SURFACE MOUNT (LCC-6) Product Summary Part Number Radiation Level R DS(on) I D CHANNEL IRHLUC767Z4

More information

SMPS MOSFET. V DSS Rds(on) max I D

SMPS MOSFET. V DSS Rds(on) max I D Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l This device is only for through hole application. SMPS MOSFET PD 984A IRFSL9N60A HEXFET Power

More information

IRFZ48R. HEXFET Power MOSFET V DSS = 60V. R DS(on) = 0.018Ω I D = 50*A. Thermal Resistance PD

IRFZ48R. HEXFET Power MOSFET V DSS = 60V. R DS(on) = 0.018Ω I D = 50*A. Thermal Resistance PD l Advanced Process Technology l Ultra Low OnResistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Drop in Replacement of the IRFZ48 for Linear/Audio

More information

IRFY9240CM HEXFET POWER MOSFET. Absolute Maximum Ratings. Product Summary. Features. Provisional Data Sheet No. PD 9.

IRFY9240CM HEXFET POWER MOSFET. Absolute Maximum Ratings. Product Summary. Features. Provisional Data Sheet No. PD 9. Provisional Data Sheet No. PD 9.1295 HEXFET POWER MOSFET IRFY9240CM P-CHNNEL -200 Volt, 0.51Ω HEXFET International Rectifier s HEXFET technology is the key to its advanced line of power MOSFET transistors.

More information

2N7582T1 IRHMS V, N-CHANNEL. RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) Absolute Maximum Ratings PD-96958B

2N7582T1 IRHMS V, N-CHANNEL. RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) Absolute Maximum Ratings PD-96958B PD-96958B RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 2N7582T IRHMS6764 5V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHMS6764 K Rads (Si).9Ω 45A*

More information

2N7617UC IRHLUC770Z4 60V, DUAL-N CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (LCC-6) Product Summary

2N7617UC IRHLUC770Z4 60V, DUAL-N CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (LCC-6) Product Summary PD-97573 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (LCC-6) 2N767UC IRHLUC77Z4 6V, DUAL-N CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHLUC77Z4 K Rads (Si).75Ω.89A

More information

THRU-HOLE (Tabless - Low-Ohmic TO-254AA)

THRU-HOLE (Tabless - Low-Ohmic TO-254AA) PD-96973A RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA) Product Summary Part Number Radiation Level RDS(on) ID IRHMB57Z6 K Rads (Si).55Ω 45A* IRHMB53Z6 3K Rads (Si).55Ω 45A*

More information

IRF7555. HEXFET Power MOSFET V DSS = -20V. R DS(on) = 0.055Ω

IRF7555. HEXFET Power MOSFET V DSS = -20V. R DS(on) = 0.055Ω Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile (

More information

SMPS MOSFET. V DSS R DS(on) max I D

SMPS MOSFET. V DSS R DS(on) max I D PD- 9385A SMPS MOSFET IRFR8N5D IRFU8N5D HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 0.25Ω 8A Benefits l Low Gate to Drain Charge to Reduce Switching Losses

More information

IRHM8360 N CHANNEL MEGA RAD HARD. Features: Pre-Irradiation. 1 PD A. REPETITIVE AVALANCHE AND dv/dt RATED.

IRHM8360 N CHANNEL MEGA RAD HARD. Features: Pre-Irradiation.   1 PD A. REPETITIVE AVALANCHE AND dv/dt RATED. PD - 90823A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR 400Volt, 0.22Ω, MEGA RAD HARD HEXFET International Rectifier s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability

More information

IRF7342. HEXFET Power MOSFET V DSS = -55V. R DS(on) = 0.105Ω SO-8. Thermal Resistance. 1 PD Top View

IRF7342. HEXFET Power MOSFET V DSS = -55V. R DS(on) = 0.105Ω SO-8. Thermal Resistance.  1 PD Top View l Generation V Technology l Ultra Low On-Resistance l Dual P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fifth Generation HEXFETs from

More information

IRF630N IRF630NS IRF630NL. HEXFET Power MOSFET V DSS = 200V. R DS(on) = 0.30Ω I D = 9.3A

IRF630N IRF630NS IRF630NL. HEXFET Power MOSFET V DSS = 200V. R DS(on) = 0.30Ω I D = 9.3A l Advanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description Fifth Generation

More information

IRHMS THRU-HOLE (Low-Ohmic TO-254AA) REF: MIL-PRF-19500/713. Absolute Maximum Ratings

IRHMS THRU-HOLE (Low-Ohmic TO-254AA) REF: MIL-PRF-19500/713. Absolute Maximum Ratings PD-94283E RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) IRHMS5976 JANSR2N755T V, P-CHANNEL REF: MIL-PRF-95/73 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part

More information

SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2) 60V, N-CHANNEL. Absolute Maximum Ratings PD-94401B

SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2) 60V, N-CHANNEL. Absolute Maximum Ratings PD-94401B PD-9440B RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2) 60V, N-CHANNEL Product Summary Part Number Radiation Level RDS(on) QG 00K Rads (Si) 6.mΩ 60nC IRHSLNA53064 300K Rads (Si) 6.mΩ 60nC IRHSLNA54064

More information

IRFDC20. HEXFET Power MOSFET PD V DSS = 600V. R DS(on) = 4.4Ω I D = 0.32A

IRFDC20. HEXFET Power MOSFET PD V DSS = 600V. R DS(on) = 4.4Ω I D = 0.32A HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements PD -9.1228 IRFDC20 V DSS = 600V R

More information

SMPS MOSFET. V DSS R DS (on) max I D

SMPS MOSFET. V DSS R DS (on) max I D Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High Speed Power Switching SMPS MOSFET PD 987A IRFS9N60A HEXFET Power MOSFET V DSS R DS (on) max I D 600V 0.75Ω 9.2A Benefits

More information

IRHLUB770Z4 SURFACE MOUNT (UB) REF: MIL-PRF-19500/744. Product Summary. Features: Absolute Maximum Ratings PD-95813H. Pre-Irradiation.

IRHLUB770Z4 SURFACE MOUNT (UB) REF: MIL-PRF-19500/744. Product Summary. Features: Absolute Maximum Ratings PD-95813H. Pre-Irradiation. PD-9583H RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB) Product Summary IRHLUB770Z JANSR2N766UB 60V, N-CHANNEL REF: MIL-PRF-9500/7 TECHNOLOGY Part Number Radiation Level RDS(on) ID QPL

More information

PFU70R360G / PFD70R360G

PFU70R360G / PFD70R360G FEATURES New technology for high voltage device Low RDS(on) low conduction losses Small package Ultra low gate charge cause lower driving requirement 100% avalanche tested Halogen Free APPLICATION Power

More information

IRFZ44ES/L. HEXFET Power MOSFET V DSS = 60V. R DS(on) = 0.023Ω I D = 48A PRELIMINARY

IRFZ44ES/L. HEXFET Power MOSFET V DSS = 60V. R DS(on) = 0.023Ω I D = 48A PRELIMINARY l l l l l l Advanced Process Technology Surface Mount (IRFZ44ES) Low-profile through-hole (IRFZ44EL) 75 C Operating Temperature Fast Switching Fully Avalanche Rated PRELIMINARY G PD - 9.74 IRFZ44ES/L HEXFET

More information

SMPS MOSFET. V DSS R DS(on) max I D

SMPS MOSFET. V DSS R DS(on) max I D Applications l High frequency DC-DC converters SMPS MOSFET PD - 94114 IRFB42N20D IRFS42N20D IRFSL42N20D HEXFET Power MOSFET V DSS R DS(on) max I D 200V 0.055Ω 42.6A Benefits l Low Gate-to-Drain Charge

More information

IRL3102S. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.013W I D = 61A PRELIMINARY

IRL3102S. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.013W I D = 61A PRELIMINARY l l l l l Advanced Process Technology Surface Mount Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Description These HEXFET Power MOSFETs were designed specifically

More information

SMPS MOSFET. V DSS R DS(on) max I D

SMPS MOSFET. V DSS R DS(on) max I D Benefits l Ultra-Low Gate Impedance l l Very Low R DS(on) Fully Characterized Avalanche Voltage and Current SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification

More information

IRF3315 APPROVED. HEXFET Power MOSFET V DSS = 150V. R DS(on) = 0.07Ω I D = 27A

IRF3315 APPROVED. HEXFET Power MOSFET V DSS = 150V. R DS(on) = 0.07Ω I D = 27A l l l l l Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced

More information

SMPS MOSFET. V DSS R DS(on) max I D

SMPS MOSFET. V DSS R DS(on) max I D Benefits l Applications l l Ultra-Low Gate Impedance SMPS MOSFET High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use High Frequency Buck Converters for

More information

I2-PAK I-PAK. TC = 25 C unless otherwise noted D2-PAK/D-PAK I2-PAK / I-PAK/ TO-220

I2-PAK I-PAK. TC = 25 C unless otherwise noted D2-PAK/D-PAK I2-PAK / I-PAK/ TO-220 General Description This Power MOSFET is produced Features using Maple semi s Advanced Super-Junction technology. - 7.6A, 500V, R DS(on) typ. = 0.5Ω@V GS = 10 V This advanced technology has - been Low

More information

IRFPC60LC PD HEXFET Power MOSFET V DSS = 600V. R DS(on) = 0.40Ω I D = 16A

IRFPC60LC PD HEXFET Power MOSFET V DSS = 600V. R DS(on) = 0.40Ω I D = 16A HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, C oss, C rss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated

More information

SMPS MOSFET. V DSS R DS(on) max I D

SMPS MOSFET. V DSS R DS(on) max I D Applications l High frequency DC-DC converters SMPS MOSFET PD- 93805B IRFB31N20D IRFS31N20D IRFSL31N20D HEXFET Power MOSFET V DSS R DS(on) max I D 200V 0.082Ω 31A Benefits l Low Gate-to-Drain Charge to

More information

Linear Derating Factor 0.02 W/ C V GS Gate-to-Source Voltage ± 20 V T J, T STG Junction and Storage Temperature Range -55 to C

Linear Derating Factor 0.02 W/ C V GS Gate-to-Source Voltage ± 20 V T J, T STG Junction and Storage Temperature Range -55 to C P- 93768A Si4435Y HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel S S S 2 3 8 7 6 A V SS = -30V G 4 5 R S(on) = 0.020Ω escription These P-channel

More information

IRG4BH20K-S PD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR. Features V CES = 1200V. V CE(on) typ. = 3.17V.

IRG4BH20K-S PD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR. Features V CES = 1200V. V CE(on) typ. = 3.17V. INSULATED GATE BIPOLAR TRANSISTOR Features High short circuit rating optimized for motor control, t sc =µs @ V CC = 720V, T J = 25 C, Combines low conduction losses with high switching speed Latest generation

More information

TC = 25 C unless otherwise noted. Maximum lead temperature for soldering purposes, 300 1/8" from case for 5 seconds

TC = 25 C unless otherwise noted. Maximum lead temperature for soldering purposes, 300 1/8 from case for 5 seconds General Description This Power MOSFET is produced Features using Maple semi s Advanced Super-Junction technology. - 7.6A, 500V, R DS(on) typ. = 0.5Ω@ = 10 V This advanced technology has been especially

More information

Features. Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction to ambient /W RθJC Thermal Resistance Junction to Case

Features. Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction to ambient /W RθJC Thermal Resistance Junction to Case General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

P-Channel MOSFET SI2369DS-HF (KI2369DS-HF) Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ±20 *1*2 *1*2 *1*2 *1*2

P-Channel MOSFET SI2369DS-HF (KI2369DS-HF) Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ±20 *1*2 *1*2 *1*2 *1*2 Features VDS (V) =-3V ID =-7.6A (VGS =±V) RDS(ON) < 9mΩ (VGS =-V) RDS(ON) < 34mΩ (VGS =-6V) RDS(ON) < 4mΩ (VGS =-4.5V).8 -. +. SOT-3-3 3.9 -. +..4 -. +..95 -. +..9 -. +. +. -..6.4.55 Unit: mm.5 -. +. -..68

More information

Maximum Power Dissipation W C

Maximum Power Dissipation W C PD- 57A INSULATED GATE BIPOLAR TRANSISTOR GA2SA6S Standard Speed IGBT Features C Standard : Optimized for minimum saturation voltage and low operating frequencies up to khz Lowest conduction losses available

More information

PDN001N60S. 600V N-Channel MOSFETs BVDSS RDSON ID 600V A S G. General Description. Features. SOT23-3S Pin Configuration.

PDN001N60S. 600V N-Channel MOSFETs BVDSS RDSON ID 600V A S G. General Description. Features. SOT23-3S Pin Configuration. General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

IRG4PH30K PD A. Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR. n-channel. Features V CES = 1200V. V CE(on) typ. = 3.

IRG4PH30K PD A. Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR. n-channel. Features V CES = 1200V. V CE(on) typ. = 3. PD -9580A IRG4PH30K INSULATED GATE BIPOLAR TRANSISTOR Features High short circuit rating optimized for motor control, t sc =µs, V CC = 720V, T J = 25 C, Combines low conduction losses with high switching

More information

A I DM Pulsed Drain Current 10 P C = 25 C Power Dissipation 2.0

A I DM Pulsed Drain Current 10 P C = 25 C Power Dissipation 2.0 l Adavanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fourth Generation HEXFETs

More information

IRG4PC40K Short Circuit Rated UltraFast IGBT

IRG4PC40K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR PD - 9.585B IRG4PC40K Short Circuit Rated UltraFast IGBT Features C Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 khz, and Short Circuit

More information

C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )

C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case ) PD -91656C INSULATED GATE BIPOLAR TRANSISTOR IRG4PC40W Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve

More information

SGP100N09T. Symbol Parameter SGP100N09T Unit. 70* -Continuous (TA = 100 )

SGP100N09T. Symbol Parameter SGP100N09T Unit. 70* -Continuous (TA = 100 ) SUPER-SEMI SUPER-MOSFET Super Gate Metal Oxide Semiconductor Field Effect Transistor 100V Super Gate Power Transistor SG*100N09T Rev. 1.01 Jun. 2016 SGP100N09T 100V N-Channel MOSFET Description The SG-MOSFET

More information

N-Channel MOSFET IRLML0100 (KRLML0100) Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage

N-Channel MOSFET IRLML0100 (KRLML0100) Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage N-Channel IRLML (KRLML) SOT-2 2.9 -. +..4 -. +. Unit: mm Features VDS (V) = V ID =.6A (VGS = V) RDS(ON) < 22mΩ (VGS = V) RDS(ON) < 25mΩ (VGS = 4.5V) G 2.4 -. +. 2.95 -. +..9 -. +.. -. +. 5.4. -. +.5 S

More information

Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )

Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) l Logic-Level Gate Drive l Ultra Low On-Resistance l Surface Mount (IRLR33) l Straight Lead (IRLU33) l dvanced Process Technology l Fast Switching l Fully valanche Rated Description Fifth Generation HEXFETs

More information

SMD Type. P-Channel Enhancement MOSFET IRLML6401 (KRLML6401) Features. Absolute Maximum Ratings Ta = 25

SMD Type. P-Channel Enhancement MOSFET IRLML6401 (KRLML6401)  Features. Absolute Maximum Ratings Ta = 25 SMD Type P-Channel Enhancement IRLML640 (KRLML640) Features Ultra low on-resistance. P-Channel. Fast switching. 2.4 - + SOT-23 3 2.9 - + 0.4 - + 2.3 - + 0.55 0.4 Unit: mm 0.95 - +.9 - + -0.0 +0.05 0-0.38

More information

SMD Type. N-Channel MOSFET SI2366DS-HF (KI2366DS-HF) Features. Absolute Maximum Ratings Ta = 25

SMD Type. N-Channel MOSFET SI2366DS-HF (KI2366DS-HF)   Features. Absolute Maximum Ratings Ta = 25 SOT-.9 -. +.. -. +. Unit: mm Features VDS (V) = V ID =.8 A (VGS = V) RDS(ON) < 6mΩ (VGS = V) RDS(ON) < mω (VGS =.V). -. +..9 -. +..9 -. +.. -. +.... -. +. Pb Free Package May be Available. The G Suffix

More information

SSP20N60S / SSF20N60S 600V N-Channel MOSFET

SSP20N60S / SSF20N60S 600V N-Channel MOSFET SSP20N60S / SSF20N60S 600V N-Channel MOSFET Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and

More information

C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G PD - 94822 IRFZ44EPbF HEXFET Power MOSFET D S V DSS = 60V R DS(on) = 0.023Ω

More information

SMPS MOSFET. V DSS Rds(on) max I D

SMPS MOSFET. V DSS Rds(on) max I D pplications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD 9878C IRF830 HEXFET Power MOSFET V DSS Rds(on) max I D 500V.40Ω 5.0 Benefits l

More information

PRELIMINARY Features Benefits SUPER Absolute Maximum Ratings Parameter Max. Units

PRELIMINARY Features Benefits SUPER Absolute Maximum Ratings Parameter Max. Units PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins High abort circuit

More information

SMPS MOSFET. Symbol Parameter Max. Units

SMPS MOSFET. Symbol Parameter Max. Units P- 93842B SMPS MOSFET IRF7455 HEXFET Power MOSFET pplications V SS R S(on) max I l High Frequency C-C Converters with Synchronous Rectification 30V 0.0075Ω 15 Benefits l l l Ultra-Low R S(on) at 4.5V V

More information

IRFF230 JANTX2N6798 JANTXV2N6798

IRFF230 JANTX2N6798 JANTXV2N6798 PD-90431E JANTX2N6798 JANTXV2N6798 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF (TO-39) 200V, N-CHANNEL REF: MIL-PRF-19500/557 Product Summary Part Number BVDSS RDS(on) I

More information

SUPER-SEMI SUPER-MOSFET. Super Junction Metal Oxide Semiconductor Field Effect Transistor. 800V Super Junction Power Transistor SS*80R380S

SUPER-SEMI SUPER-MOSFET. Super Junction Metal Oxide Semiconductor Field Effect Transistor. 800V Super Junction Power Transistor SS*80R380S SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 800V Super Junction Power Transistor SS*80R380S Rev. 1.2 Oct. 2017 September, 2013 SJ-FET SSF80R380S/SSP80R380S/SSW80R380S/SSA80R380S

More information

Linear Derating Factor 0.01 W/ C V GS Gate-to-Source Voltage ± 12 V T J, T STG Junction and Storage Temperature Range -55 to C

Linear Derating Factor 0.01 W/ C V GS Gate-to-Source Voltage ± 12 V T J, T STG Junction and Storage Temperature Range -55 to C PD - 93757B IRLML2502 HEXFET Power MOSFET Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (

More information

SMD Type. P-Channel Enhancement MOSFET SI2333CDS (KI2333CDS) Features. Absolute Maximum Ratings Ta = 25

SMD Type. P-Channel Enhancement MOSFET SI2333CDS (KI2333CDS)   Features. Absolute Maximum Ratings Ta = 25 P-Channel Enhancement Features VDS (V) =-V ID =-5.A (VGS =-.5V) RDS(ON) < 5mΩ (VGS =-.5V) RDS(ON) < 5mΩ (VGS =-.5V) RDS(ON) < 59mΩ (VGS =-.8V). -. SOT-.95 -..9 -.. -..9 -.. -..55. Unit: mm. -. +.5 G S

More information

PKP3105. P-Ch 30V Fast Switching MOSFETs

PKP3105. P-Ch 30V Fast Switching MOSFETs Super Low Gate Charge % EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology Product Summary BVDSS RDSON ID -3V mω -6A Description TO22 Pin

More information

Features. Description. Table 1: Device summary Order code Marking Package Packaging STW56N60M2-4 56N60M2 TO247-4 Tube

Features. Description. Table 1: Device summary Order code Marking Package Packaging STW56N60M2-4 56N60M2 TO247-4 Tube N-channel 600 V, 0.045 Ω typ., 52 A MDmesh M2 Power MOSFET in a TO247-4 package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID STW56N60M2-4 650 V 0.055 Ω 52 A Excellent switching

More information

C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 1.1 (10) N m (lbf in)

C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 1.1 (10) N m (lbf in) Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax

More information

SMPS MOSFET. V DSS R DS(on) max I D

SMPS MOSFET. V DSS R DS(on) max I D SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l

More information

IRFL9110 V DSS = -100V. R DS(on) = 1.2Ω I D = -1.1A

IRFL9110 V DSS = -100V. R DS(on) = 1.2Ω I D = -1.1A PD - 90864A IRFL9110 HEXFET Power MOSFET Surface Mount Avaiabe in Tape & Ree Dynamic dv/dt Rating Repetitive Avaanche Rated P-Channe Fast Switching Ease of Paraeing Description Third Generation HEXFETs

More information

HEXFET MOSFET TECHNOLOGY

HEXFET MOSFET TECHNOLOGY PD - 91290C POWER MOSFET THRU-HOLE (TO-257AA) IRFY340C,IRFY340CM 400V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(o) ID Eyelets IRFY340C 0.55 Ω 8.7A Ceramic IRFY340CM 0.55 Ω 8.7A

More information

SMPS MOSFET. V DSS R DS(on) max I D

SMPS MOSFET. V DSS R DS(on) max I D SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate,

More information

SJ-FET. TSA20N60S, TSK20N60S 600V N-Channel MOSFET. September, 2013

SJ-FET. TSA20N60S, TSK20N60S 600V N-Channel MOSFET. September, 2013 TSA20N60S, TSK20N60S 600V N-Channel MOSFET Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and

More information

TO-220 G D S. T C = 25 C unless otherwise noted

TO-220 G D S. T C = 25 C unless otherwise noted 500V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state

More information

International В Rectifier IRFZ44

International В Rectifier IRFZ44 International В Rectifier IRFZ44 HEXFET Power MOSFET PD-9.510C Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 60V ^DS(on) - 0.028Q

More information

IRFL110 V DSS = 100V. R DS(on) = 0.54Ω I D = 1.5A SOT-223

IRFL110 V DSS = 100V. R DS(on) = 0.54Ω I D = 1.5A SOT-223 PD - 90861A IRFL110 HEXFET Power MOSFET Surface Mount Avaiabe in Tape & Ree Dynamic dv/dt Rating Repetitive Avaanche Rated Fast Switching Ease of Paraeing Simpe Drive Requirements Description Third Generation

More information

l Advanced Process Technology

l Advanced Process Technology l Advanced Process Technology D l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated G l Ease of Paralleling l Simple Drive Requirements S l Lead-Free Description

More information

SMPS MOSFET. V DSS Rds(on) max I D

SMPS MOSFET. V DSS Rds(on) max I D Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed power switching Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche

More information